| Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Panjit International |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
40 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.21 ohm |
2 A |
SINGLE |
R-PSSO-G2 |
TO-252AA |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
167 W |
PLASTIC/EPOXY |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
900 A |
451 mJ |
250 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0023 ohm |
250 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
160 W |
PLASTIC/EPOXY |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
900 A |
338 mJ |
250 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0017 ohm |
250 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
||||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
48 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
132 A |
58 mJ |
44 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN BISMUTH |
.0185 ohm |
44 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
e6 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
60 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
180 A |
57 mJ |
60 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN BISMUTH |
.013 ohm |
60 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
e6 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
72 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
246 A |
130 mJ |
82 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN BISMUTH |
.0084 ohm |
82 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
e6 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||
|
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.6 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
100 A |
260 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.015 ohm |
12 A |
DUAL |
R-PDSO-F8 |
DRAIN |
e3 |
526 pF |
MIL-STD-202 |
|||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
1.74 W |
PLASTIC/EPOXY |
SWITCHING |
52 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
35 A |
160 mJ |
9 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
950 ns |
-55 Cel |
3850 ns |
MATTE TIN |
.181 ohm |
9 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
e3 |
30 |
260 |
40 pF |
||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
71 W |
PLASTIC/EPOXY |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
70 A |
50 mJ |
19 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.074 ohm |
19 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
24 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
90 A |
36 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.01 ohm |
70 A |
DUAL |
S-PDSO-N8 |
DRAIN |
e3 |
260 |
559 pF |
MIL-STD-202 |
||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.9 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
2 |
60 A |
14.7 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.017 ohm |
10.7 A |
DUAL |
S-PDSO-F8 |
e3 |
260 |
160 pF |
MIL-STD-202 |
|||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
180 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
160 A |
160 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0032 ohm |
100 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
TO-252 |
e3 |
260 |
102 pF |
MIL-STD-202 |
|||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
65 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
50 A |
304 mJ |
15.5 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
200 ns |
-55 Cel |
185 ns |
MATTE TIN |
.15 ohm |
15.5 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
e3 |
30 |
260 |
120 pF |
AEC-Q101 |
|||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
71 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
125 A |
195 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.0075 ohm |
69 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
e3 |
30 |
260 |
280 pF |
AEC-Q101 |
||||||||||||||||||
|
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.6 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
100 A |
113 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.01 ohm |
15 A |
DUAL |
R-PDSO-F8 |
DRAIN |
e3 |
260 |
647 pF |
MIL-STD-202 |
||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
35 A |
65 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.05 ohm |
5.3 A |
DUAL |
R-PDSO-G8 |
e3 |
260 |
24 pF |
||||||||||||||||||||||
|
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.6 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
100 A |
113 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.01 ohm |
60 A |
DUAL |
R-PDSO-F8 |
DRAIN |
HIGH RELIABILITY |
e3 |
260 |
647 pF |
AEC-Q101; MIL-STD-202 |
|||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
80 A |
55 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0055 ohm |
16 A |
DUAL |
S-PDSO-N8 |
1 |
DRAIN |
e3 |
30 |
260 |
248 pF |
MIL-STD-202 |
||||||||||||||||||
|
|
Texas Instruments |
N-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
328 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0026 ohm |
200 A |
SINGLE |
R-PSSO-G2 |
2 |
DRAIN |
AVALANCHE RATED |
TO-263AB |
e3 |
30 |
260 |
551 pF |
||||||||||||||||||
|
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
205 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
.0023 ohm |
32 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
AVALANCHE RATED |
e4 |
30 |
260 |
333 pF |
|||||||||||||||||||
|
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
15 A |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.072 ohm |
3 A |
DUAL |
R-PDSO-G3 |
e3 |
260 |
101 pF |
AEC-Q101; MIL-STD-202 |
||||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.7 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
11.2 A |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.2 ohm |
2.6 A |
DUAL |
R-PDSO-G6 |
e3 |
260 |
25 pF |
AEC-Q101; MIL-STD-202 |
||||||||||||||||||||||
|
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
1.59 W |
PLASTIC/EPOXY |
SWITCHING |
12 V |
BALL |
SQUARE |
ENHANCEMENT MODE |
1 |
20 A |
4 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN SILVER COPPER |
.13 ohm |
3 A |
BOTTOM |
S-PBGA-B4 |
e1 |
260 |
90 pF |
|||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.7 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
25 A |
10 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
.03 ohm |
6.2 A |
DUAL |
S-PDSO-N6 |
DRAIN |
HIGH RELIABILITY |
e4 |
260 |
44 pF |
AEC-Q101 |
|||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
54 A |
35 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.028 ohm |
40 A |
DUAL |
R-PDSO-F5 |
DRAIN |
HIGH RELIABILITY |
e3 |
260 |
AEC-Q101 |
|||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
100 W |
PLASTIC/EPOXY |
SWITCHING |
80 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
200 A |
10.2 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.017 ohm |
50 A |
DUAL |
R-PDSO-F8 |
DRAIN |
e3 |
260 |
10 pF |
MIL-STD-202 |
||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
94 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
33.7 mJ |
90 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
53 ns |
-55 Cel |
72 ns |
MATTE TIN |
.0047 ohm |
90 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-263AB |
e3 |
30 |
245 |
AEC-Q101 |
||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
36 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
81 A |
25 mJ |
27 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN BISMUTH |
.03 ohm |
27 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
e6 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
74 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1140 A |
384 mJ |
211 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
45 ns |
-55 Cel |
92 ns |
MATTE TIN |
.00109 ohm |
211 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
MO-240AA |
e3 |
30 |
260 |
180 pF |
|||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
40 W |
PLASTIC/EPOXY |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
320 A |
136 mJ |
59 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0058 ohm |
59 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-252AA |
e3 |
30 |
260 |
|||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
18 W |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
77 A |
48 mJ |
17 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.04 ohm |
17 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-252AA |
e3 |
30 |
260 |
|||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
75 W |
PLASTIC/EPOXY |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
75 A |
150 mJ |
38 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.026 ohm |
38 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
e3 |
30 |
260 |
80 pF |
|||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
100 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
150 A |
450 mJ |
70 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.01 ohm |
70 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
e3 |
30 |
260 |
300 pF |
AEC-Q101 |
|||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
20.8 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
28 A |
14 A |
1 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.13 ohm |
11.4 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
FAST SWITCHING |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
984 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0026 ohm |
110 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-263AB |
e3 |
30 |
245 |
AEC-Q101 |
||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
150 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
33.7 mJ |
90 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
47 ns |
-55 Cel |
70 ns |
Matte Tin (Sn) - annealed |
.0044 ohm |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-252AA |
e3 |
30 |
260 |
AEC-Q101 |
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|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
48.4 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
22 mJ |
25 A |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
17 ns |
-55 Cel |
36 ns |
MATTE TIN |
.0115 ohm |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-252AA |
e3 |
30 |
260 |
28 pF |
AEC-Q101 |
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|
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
125 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
320 A |
200 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
.011 ohm |
80 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
TO-252 |
NOT SPECIFIED |
NOT SPECIFIED |
AEC-Q101 |
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|
|
Diodes Incorporated |
N-CHANNEL AND P-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
2 |
55 A |
24 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.02 ohm |
9 A |
DUAL |
S-PDSO-F8 |
1 |
e3 |
30 |
260 |
107 pF |
MIL-STD-202 |
|||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.6 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
40 A |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.024 ohm |
6.2 A |
DUAL |
R-PDSO-G6 |
1 |
e3 |
30 |
260 |
78 pF |
MIL-STD-202 |
||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL AND P-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
2 |
45 A |
9.8 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.035 ohm |
7.2 A |
DUAL |
S-PDSO-F8 |
1 |
e3 |
30 |
260 |
57 pF |
MIL-STD-202 |
|||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
200 W |
PLASTIC/EPOXY |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
560 A |
420 mJ |
140 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
3.8 W |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
7.2 ohm |
140 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
200 W |
PLASTIC/EPOXY |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
560 A |
420 mJ |
140 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
3.8 W |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
7.2 ohm |
140 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
200 W |
PLASTIC/EPOXY |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
560 A |
420 mJ |
140 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
3.8 W |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
7.2 ohm |
140 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
200 W |
PLASTIC/EPOXY |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
560 A |
420 mJ |
140 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
3.8 W |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
7.2 ohm |
140 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
335 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0105 ohm |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
335 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0105 ohm |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
335 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0105 ohm |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
10 |
260 |
AEC-Q101 |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.