YES Power Field Effect Transistors (FET) 2,400+

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
TPC8207(TE12L)	Toshiba	N-CHANNEL		YES	1.5 W						ENHANCEMENT MODE				6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					6 A
FQD2N60CTF	Fairchild Semiconductor	N-CHANNEL	SINGLE	YES	44 W						ENHANCEMENT MODE	1			1.9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			MATTE TIN		1.9 A			1			e3		260
NTR4503NT3	Onsemi	N-CHANNEL	SINGLE	YES	.73 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			TIN LEAD		2 A			1			e0		235
AO4413L	Alpha & Omega Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A		15 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	3 W	150 Cel	SILICON	-55 Cel		.0085 ohm	15 A	DUAL	R-PDSO-G8							1067 pF
BF1005S-E6327	Infineon Technologies	N-CHANNEL	SINGLE	YES	.2 W						DUAL GATE, ENHANCEMENT MODE	1			.025 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					.025 A			1					260
BF1005SR-E6327	Infineon Technologies	N-CHANNEL	SINGLE	YES	.2 W						DUAL GATE, ENHANCEMENT MODE	1			.025 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					.025 A			1					260
AO3422L	Alpha & Omega Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		2.1 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.25 W	150 Cel	SILICON	-55 Cel		.16 ohm	2.1 A	DUAL	R-PDSO-G3			TO-236				12.6 pF
AO4822A	Alpha & Omega Semiconductor	N-CHANNEL		YES	2 W						ENHANCEMENT MODE				8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					8 A
AO4822AL	Alpha & Omega Semiconductor	N-CHANNEL		YES	2 W						ENHANCEMENT MODE				8.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					8.5 A
AON7408	Alpha & Omega Semiconductor	N-CHANNEL	SINGLE	YES	11 W						ENHANCEMENT MODE	1			18 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					18 A
AO4490L	Alpha & Omega Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.8 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2.8 W	150 Cel	SILICON	-55 Cel		.0072 ohm	16 A	DUAL	R-PDSO-G8							238 pF
AO4614BL	Alpha & Omega Semiconductor	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	40 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2 W	150 Cel	SILICON	-55 Cel		.03 ohm	6 A	DUAL	R-PDSO-G8							43 pF
FDC2512-F095	Fairchild Semiconductor	N-CHANNEL	SINGLE	YES	1.6 W						ENHANCEMENT MODE	1			1.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					1.4 A
FDC3512-F095	Fairchild Semiconductor	N-CHANNEL	SINGLE	YES	1.6 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					3 A
FDC3612-F095	Fairchild Semiconductor	N-CHANNEL	SINGLE	YES	1.6 W						ENHANCEMENT MODE	1			2.6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					2.6 A
FDC5612-F095	Fairchild Semiconductor	N-CHANNEL	SINGLE	YES	1.6 W						ENHANCEMENT MODE	1			4.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					4.3 A
FDC655BN-NBNN007	Fairchild Semiconductor	N-CHANNEL	SINGLE	YES	1.6 W						ENHANCEMENT MODE	1			6.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			MATTE TIN		6.3 A			1			e3	30	260
NDS355AN-NB9L007A	Fairchild Semiconductor	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1			1.7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			Tin (Sn)		1.7 A			1			e3	30	260
FDS8984-F40	Fairchild Semiconductor	N-CHANNEL		YES	1.6 W						ENHANCEMENT MODE				7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			MATTE TIN		7 A			1			e3	30	260
VNN3NV04TR-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	7 W						ENHANCEMENT MODE	1						FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			MATTE TIN					1			e3	30	260
BF5020-E6327	Infineon Technologies	N-CHANNEL	SINGLE	YES	.2 W						DEPLETION MODE	1			.025 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					.025 A			1					260
BF5020R-E6327	Infineon Technologies	N-CHANNEL	SINGLE	YES	.2 W						DEPLETION MODE	1			.025 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					.025 A			1					260
BF5030-E6327	Infineon Technologies	N-CHANNEL	SINGLE	YES	.2 W						ENHANCEMENT MODE	1			.025 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					.025 A			1					260
BF5030R-E6327	Infineon Technologies	N-CHANNEL	SINGLE	YES	.2 W						ENHANCEMENT MODE	1			.025 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					.025 A			1					260
SP8K5FU6TB	ROHM	N-CHANNEL		YES	2 W						ENHANCEMENT MODE				3.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					3.5 A			1				10	260
SP8K2FU6TB	ROHM	N-CHANNEL		YES	2 W						ENHANCEMENT MODE				6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					6 A			1				10	260
IRF6727MTR1PBF	International Rectifier	N-CHANNEL	SINGLE	YES	89 W						ENHANCEMENT MODE	1			180 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					180 A
BF904A,215	NXP Semiconductors	N-CHANNEL	SINGLE	YES	.2 W						DUAL GATE, ENHANCEMENT MODE	1			.03 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			Matte Tin (Sn)		.03 A						e3
BF904AR,215	NXP Semiconductors	N-CHANNEL	SINGLE	YES	.2 W						DUAL GATE, ENHANCEMENT MODE	1			.03 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			Matte Tin (Sn)		.03 A						e3
BLD6G22L-50,112	NXP Semiconductors	N-CHANNEL	SINGLE	YES							ENHANCEMENT MODE	1			10.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel					10.2 A							30	260
BLD6G22LS-50,112	NXP Semiconductors	N-CHANNEL	SINGLE	YES							ENHANCEMENT MODE	1			10.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel					10.2 A							30	260
NE5520379A-T1A-A	Renesas Electronics	N-CHANNEL	SINGLE	YES	20 W						ENHANCEMENT MODE	1			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		125 Cel					1.5 A
NP32N055SLE-E1-AY	Renesas Electronics	N-CHANNEL	SINGLE	YES	66 W						ENHANCEMENT MODE	1			32 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					32 A
NP22N055SLE-E1-AY	Renesas Electronics	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			22 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					22 A
NP22N055SHE-E1-AY	Renesas Electronics	N-CHANNEL	SINGLE	YES	45 W						ENHANCEMENT MODE	1			22 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					22 A
UPA672T-T1-A	Renesas Electronics	N-CHANNEL		YES	.2 W						ENHANCEMENT MODE				.1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			TIN BISMUTH		.1 A						e6
AOD5N50	Alpha & Omega Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	104 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	17 A	235 mJ	5 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-50 Cel		1.6 ohm	5 A	SINGLE	R-PSSO-G2		DRAIN	TO-252				7 pF
2N7002PT,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	.77 W						ENHANCEMENT MODE	1			.31 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel		-55 Cel	TIN		.31 A			1			e3	30	260
2N7002BKT,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	.32 W						ENHANCEMENT MODE	1			.29 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel		-55 Cel	TIN		.29 A			1			e3	30	260
BUK9MHH-65PNN,518	NXP Semiconductors	N-CHANNEL		YES	5 W						ENHANCEMENT MODE				15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					15 A			3				30	260
BLD6G21L-50,112	NXP Semiconductors	N-CHANNEL	SINGLE	YES							ENHANCEMENT MODE	1			10.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel					10.2 A							30	260
BLD6G21LS-50,112	NXP Semiconductors	N-CHANNEL	SINGLE	YES							ENHANCEMENT MODE	1			10.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel					10.2 A							30	260
BF1218,115	NXP Semiconductors	N-CHANNEL		YES	.18 W						DUAL GATE, ENHANCEMENT MODE				.03 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					.03 A
BF1217WR,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	.18 W						DUAL GATE, ENHANCEMENT MODE	1			.03 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					.03 A
BF1215,115	NXP Semiconductors	N-CHANNEL		YES	.18 W						DUAL GATE, ENHANCEMENT MODE				.03 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					.03 A
BUK9MJJ-65PLL,518	NXP Semiconductors	N-CHANNEL		YES	4.4 W						ENHANCEMENT MODE				11.6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					11.6 A			3				30	260
BF1216,115	NXP Semiconductors	N-CHANNEL		YES	.18 W						DUAL GATE, ENHANCEMENT MODE				.03 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					.03 A
BLS6G2933P-200,117	NXP Semiconductors	N-CHANNEL	SINGLE	YES							ENHANCEMENT MODE	1			66 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel					66 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.