YES Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BLF3G21-6,135

NXP Semiconductors

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

2.3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

2.3 A

BLF1043,135

NXP Semiconductors

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

2.2 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

200 Cel

2.2 A

VNB20N07-E

STMicroelectronics

N-CHANNEL

COMPLEX

YES

83 W

PLASTIC/EPOXY

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

580 ns

1100 ns

.07 ohm

SINGLE

R-PSSO-G2

TO-263

SSM5H12TU(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

.8 W

ENHANCEMENT MODE

1

1.9 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

125 Cel

1.9 A

EFC6602R-A-TR

Onsemi

N-CHANNEL

YES

2 W

ENHANCEMENT MODE

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

18 A

1

30

260

IRFH7921TR2PBF

International Rectifier

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.1 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

120 A

29 mJ

34 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0085 ohm

15 A

DUAL

R-PDSO-F5

DRAIN

120 pF

BLF8G20LS-400PVQ

NXP Semiconductors

N-CHANNEL

YES

ENHANCEMENT MODE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

AOD2N100

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE

YES

83 W

ENHANCEMENT MODE

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2 A

NVMFD5853NT1G

Onsemi

N-CHANNEL

YES

58 W

ENHANCEMENT MODE

53 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

53 A

1

e3

30

260

NVMFD5853NWFT1G

Onsemi

N-CHANNEL

YES

58 W

ENHANCEMENT MODE

53 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

53 A

1

e3

30

260

NTTFS4965NFTWG

Onsemi

N-CHANNEL

SINGLE

YES

22.73 W

ENHANCEMENT MODE

1

64 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

64 A

1

e3

NTMFS4965NFT3G

Onsemi

N-CHANNEL

SINGLE

YES

22.73 W

ENHANCEMENT MODE

1

65 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

65 A

1

e3

30

260

NTLLD4951NFTWG

Onsemi

N-CHANNEL

YES

3.2 W

ENHANCEMENT MODE

13 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

13 A

1

e3

30

260

PMZ290UNYL

NXP Semiconductors

N-CHANNEL

SINGLE

YES

2.7 W

ENHANCEMENT MODE

1

1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1 A

NTMFS4C09NT1G-001

Onsemi

N-CHANNEL

SINGLE

YES

25.5 W

ENHANCEMENT MODE

1

52 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

52 A

BLC6G22LS-75,112

NXP Semiconductors

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

18 A

BLF404,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

8.3 W

ENHANCEMENT MODE

1

1.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

1.5 A

BUK1M200-50SDLD,51

NXP Semiconductors

N-CHANNEL

YES

9.4 W

ENHANCEMENT MODE

1.7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.7 A

BUK7619-100B,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

200 W

ENHANCEMENT MODE

1

64 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

64 A

1

e3

30

245

BUK763R4-30B,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

255 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

75 A

1

e3

30

245

PHD18NQ10T,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

79 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

18 A

SFT1443-TL-W

Onsemi

N-CHANNEL

SINGLE

YES

19 W

ENHANCEMENT MODE

1

9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

9 A

1

e6

30

260

BUK7Y9R9-80E/CX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

195 W

ENHANCEMENT MODE

1

89 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

89 A

NTMKB4895NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

120 A

80 mJ

2

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

SILICON

.006 ohm

15 A

BOTTOM

R-XBCC-N2

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NTMKE4891NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

210 A

184 mJ

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

SILICON

.0026 ohm

26.7 A

BOTTOM

R-XBCC-N3

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

RSD050N06TL

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

15 A

5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN COPPER

.14 ohm

5 A

SINGLE

R-PSSO-G2

1

Not Qualified

e2

10

260

RSD150N06TL

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

30 A

15 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN COPPER

.051 ohm

15 A

SINGLE

R-PSSO-G2

1

Not Qualified

e2

10

260

FDD14AN06LA0_F085

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

55 mJ

9.5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0116 ohm

9.5 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

30

260

AEC-Q101

NTMD5838NLR2G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

35 A

20 mJ

8.9 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0308 ohm

7.4 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

NTMFS5832NLT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

96 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

443 A

134 mJ

111 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0065 ohm

20 A

DUAL

R-PDSO-F5

1

Not Qualified

e3

30

260

NVMFD5877NLT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

23 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

74 A

10.5 mJ

17 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.06 ohm

6 A

DUAL

R-PDSO-F6

1

DRAIN

Not Qualified

e3

30

260

NVMFD5877NLT3G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

23 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

74 A

10.5 mJ

17 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.06 ohm

6 A

DUAL

R-PDSO-F6

1

DRAIN

Not Qualified

e3

30

260

NP160N04TUJ-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

640 A

160 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.002 ohm

160 A

SINGLE

R-PSSO-G6

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NP80N04PLG-E1B-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

115 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0045 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

NP80N04PUG-E1B-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

115 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0045 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

NP80N06PLG-E1B-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

115 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0083 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

NP90N04VUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.004 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252

NOT SPECIFIED

NOT SPECIFIED

NP90N06VLG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0078 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-252

NOT SPECIFIED

NOT SPECIFIED

CSD16323Q3C

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

112 A

125 mJ

60 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0072 ohm

21 A

DUAL

R-PDSO-N8

1

DRAIN

Not Qualified

AVALANCHE RATED

e3

30

260

CSD17506Q5A

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.2 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

150 A

259 mJ

100 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0053 ohm

23 A

DUAL

R-PDSO-N8

1

DRAIN

Not Qualified

AVALANCHE RATED

e3

30

260

65 pF

NP180N055TUJ-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

348 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

720 A

180 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0023 ohm

180 A

SINGLE

R-PSSO-G6

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NP90N03VHG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0032 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

NP90N03VLG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0032 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252

NOT SPECIFIED

NOT SPECIFIED

SIA444DJT-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

19 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

40 A

12 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.017 ohm

12 A

DUAL

S-PDSO-N3

DRAIN

Not Qualified

e3

260

SIS478DN-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

15.6 W

PLASTIC/EPOXY

SWITCHING

30 V

C BEND

SQUARE

ENHANCEMENT MODE

1

40 A

5 mJ

12 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.02 ohm

12 A

DUAL

S-PDSO-C5

DRAIN

Not Qualified

e3

40

260

SQM120N03-1M5L_GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

480 A

336 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0015 ohm

120 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

FQD3P50TM_F085

Fairchild Semiconductor

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

50 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8.4 A

250 mJ

2.1 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

4.9 ohm

2.1 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

NP180N04TUJ-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

720 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0015 ohm

180 A

SINGLE

R-PSSO-G6

DRAIN

Not Qualified

TO-263

NOT SPECIFIED

NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.