YES Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

STH110N10F7-6

STMicroelectronics

N-CHANNEL

SINGLE

YES

150 W

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

110 A

NOT SPECIFIED

NOT SPECIFIED

STH270N8F7-2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

315 W

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

720 A

1160 mJ

180 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0021 ohm

180 A

SINGLE

R-PSSO-G2

1

DRAIN

ULTRA LOW RESISTANCE

STL20DN10F7

STMicroelectronics

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

62.5 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

20 A

20 A

6

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.067 ohm

12.3 A

DUAL

R-PDSO-F6

DRAIN

NOT SPECIFIED

NOT SPECIFIED

STL51N3LLH5

STMicroelectronics

N-CHANNEL

SINGLE

YES

62.5 W

1

51 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

51 A

NOT SPECIFIED

NOT SPECIFIED

UPA2630T1R-E2-AX

Renesas Electronics

P-CHANNEL

SINGLE

YES

2.5 W

1

7 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

NICKEL PALLADIUM GOLD

7 A

e4

260

UPA2631T1R-E2-AX

Renesas Electronics

P-CHANNEL

SINGLE

YES

2.5 W

1

6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

NICKEL PALLADIUM GOLD

6 A

e4

260

NVD3055-150T4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

28.8 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

27 A

30 mJ

9 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

28.8 W

175 Cel

SILICON

105 ns

-55 Cel

75 ns

MATTE TIN

.15 ohm

9 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

40 pF

AEC-Q101

DMG4406LSS-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

90 A

10.3 A

8

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.011 ohm

9.3 A

DUAL

R-PDSO-G8

1

HIGH RELIABILITY

e3

30

260

STD80N6F6

STMicroelectronics

N-CHANNEL

SINGLE

YES

120 W

1

80 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

80 A

NOT SPECIFIED

NOT SPECIFIED

STL40N75LF3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

62 W

PLASTIC/EPOXY

SWITCHING

75 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

160 A

40 A

5

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.022 ohm

40 A

DUAL

R-PDSO-F5

DRAIN

NOT SPECIFIED

NOT SPECIFIED

IPD600N25N3GBTMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

210 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.06 ohm

25 A

SINGLE

R-PSSO-G2

DRAIN

TO-252AA

e3

2SK3510-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

125 W

1

83 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

83 A

NOT SPECIFIED

NOT SPECIFIED

RSS050P03FU6TB

ROHM

P-CHANNEL

SINGLE

YES

2 W

1

5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

1

10

260

DMN2028UFDH-7

Diodes Incorporated

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.5 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

40 A

6.8 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.036 ohm

6.8 A

DUAL

R-PDSO-N8

1

e3

30

260

AEC-Q101

NTDV5804NT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

71 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

125 A

195 mJ

69 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0075 ohm

69 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

AEC-Q101

NVD4805NT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

79 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

175 A

288 mJ

95 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0074 ohm

12.7 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

AEC-Q101

STDLED656

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

30 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

24 A

6 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.3 ohm

6 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

STH270N4F3-2

STMicroelectronics

N-CHANNEL

SINGLE

YES

300 W

1

180 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

180 A

NOT SPECIFIED

NOT SPECIFIED

NDD60N360U1T4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

114 W

PLASTIC/EPOXY

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

44 A

64 mJ

11 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.36 ohm

11 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

NTMFD4C20NT1G

Onsemi

N-CHANNEL

YES

4.6 W

27.4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn) - annealed

27.4 A

1

e3

30

260

NDT02N40T1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

400 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.6 A

120 mJ

.4 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0055 ohm

.4 A

DUAL

R-PDSO-G4

1

DRAIN

TO-261AA

e3

30

260

NTBV75N06T4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

214 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

225 A

844 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.0095 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

AEC-Q101

NVD3055-094T4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

48 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

45 A

61 mJ

12 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.094 ohm

12 A

SINGLE

R-PSSO-G2

1

DRAIN

e3

30

260

AEC-Q101

NVMFD5852NLWFT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

27 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

329 A

80 mJ

44 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.012 ohm

15 A

DUAL

R-PDSO-F6

1

DRAIN

e3

30

260

AEC-Q101

NVMFD5853NLWFT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

24 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

165 A

40 mJ

34 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.015 ohm

12 A

DUAL

R-PDSO-F6

1

DRAIN

e3

30

260

AEC-Q101

NVMFD5873NLWFT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

107 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

190 A

40 mJ

58 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.013 ohm

10 A

DUAL

R-PDSO-F6

1

DRAIN

e3

30

260

AEC-Q101

NVMFD5877NLWFT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

23 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

74 A

40 mJ

17 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.06 ohm

6 A

DUAL

R-PDSO-F6

1

DRAIN

e3

30

260

AEC-Q101

NVMFD5877NLWFT3G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

23 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

74 A

40 mJ

17 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.06 ohm

6 A

DUAL

R-PDSO-F6

1

DRAIN

e3

30

260

AEC-Q101

DMC4028SSDQ-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.16 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

27.3 A

7.2 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.028 ohm

5.4 A

DUAL

R-PDSO-G8

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

STH360N4F6-2

STMicroelectronics

N-CHANNEL

SINGLE

YES

300 W

1

180 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

180 A

RS1E130GNTB

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

52 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0152 ohm

13 A

DUAL

R-PDSO-F5

1

DRAIN

e3

10

260

UPA2600T1R-E2-AX

Renesas Electronics

N-CHANNEL

SINGLE

YES

2.4 W

20 V

1

7 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

NICKEL PALLADIUM GOLD

.0191 ohm

7 A

e4

260

UPA2660T1R-E2-AX

Renesas Electronics

N-CHANNEL

YES

2.3 W

20 V

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

NICKEL PALLADIUM GOLD

.062 ohm

4 A

e4

260

UPA2690T1R-E2-AX

Renesas Electronics

N-CHANNEL AND P-CHANNEL

SINGLE

YES

2.3 W

20 V

1

4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

NICKEL PALLADIUM GOLD

.062 ohm

4 A

e4

260

UPA2739T1A-E2-AY

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

83 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

180 A

160 mJ

85 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0028 ohm

85 A

DUAL

R-PDSO-N8

DRAIN

e3

UPA2764T1A-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

83 W

1

130 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

130 A

e3

UPA2765T1A-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

83 W

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

100 A

e3

UPA2766T1A-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

83 W

30 V

1

130 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

.00088 ohm

130 A

e3

SPB07N60C3ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

21.9 A

230 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.6 ohm

7.3 A

SINGLE

R-PSSO-G2

1

Not Qualified

AVALANCHE RATED

TO-263AB

e3

SPB12N50C3ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

34.8 A

340 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.38 ohm

11.6 A

SINGLE

R-PSSO-G2

1

Not Qualified

AVALANCHE RATED

TO-263AB

e3

SPB16N50C3ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

48 A

460 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.28 ohm

16 A

SINGLE

R-PSSO-G2

1

Not Qualified

AVALANCHE RATED

TO-263AB

e3

SPB04N50C3ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

13.5 A

130 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.95 ohm

4.5 A

SINGLE

R-PSSO-G2

1

Not Qualified

AVALANCHE RATED

TO-263AB

e3

SPB11N60S5ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

22 A

340 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.38 ohm

11 A

SINGLE

R-PSSO-G2

1

Not Qualified

AVALANCHE RATED

TO-263AB

e3

SPB07N60S5ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

14.6 A

230 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.6 ohm

7.3 A

SINGLE

R-PSSO-G2

1

Not Qualified

AVALANCHE RATED

TO-263AB

e3

SPB20N60S5ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

690 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.19 ohm

20 A

SINGLE

R-PSSO-G2

1

Not Qualified

AVALANCHE RATED

TO-263AB

e3

SPB03N60C3ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

9.6 A

100 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

1.4 ohm

3.2 A

SINGLE

R-PSSO-G2

1

Not Qualified

AVALANCHE RATED, HIGH VOLTAGE

TO-263AB

e3

SPB02N60C3ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

5.4 A

50 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

3 ohm

1.8 A

SINGLE

R-PSSO-G2

1

Not Qualified

AVALANCHE RATED

TO-263AB

e3

SPB04N60C3ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

13.5 A

130 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.95 ohm

4.5 A

SINGLE

R-PSSO-G2

1

Not Qualified

AVALANCHE RATED

TO-263AB

e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.