YES Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BLF6G22S-45,112

NXP Semiconductors

N-CHANNEL

SINGLE

YES

2.5 W

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

BLS2933-100,112

NXP Semiconductors

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

12 A

BUK761R8-30C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

333 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

245

BUK7880-55A,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

8 W

ENHANCEMENT MODE

1

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

7 A

1

e3

30

260

BUK9213-30A,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

150 W

ENHANCEMENT MODE

1

55 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn)

55 A

1

e3

BUK9MGP-55PTS,518

NXP Semiconductors

N-CHANNEL

YES

5.2 W

ENHANCEMENT MODE

16.9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

16.9 A

3

30

260

BUK9MJJ-55PTT,518

NXP Semiconductors

N-CHANNEL

YES

4.5 W

ENHANCEMENT MODE

12.9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

12.9 A

3

30

260

PMN38EN,135

NXP Semiconductors

N-CHANNEL

SINGLE

YES

1.75 W

ENHANCEMENT MODE

1

5.4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

5.4 A

1

e3

30

260

PMN49EN,135

NXP Semiconductors

N-CHANNEL

SINGLE

YES

1.75 W

ENHANCEMENT MODE

1

4.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

4.6 A

1

e3

30

260

BUK6240-75C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

60 W

ENHANCEMENT MODE

1

22 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

22 A

PSMN011-30YL,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

49 W

ENHANCEMENT MODE

1

51 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

51 A

1

e3

30

260

PSMN8R0-30YL,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

56 W

ENHANCEMENT MODE

1

62 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

62 A

1

e3

30

260

TPCA8010-H(TE12L,Q)

Toshiba

N-CHANNEL

SINGLE

YES

45 W

ENHANCEMENT MODE

1

5.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

5.5 A

2SK3466(TE24L,Q)

Toshiba

N-CHANNEL

SINGLE

YES

50 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

TPCP8203(TE85L,F)

Toshiba

N-CHANNEL

YES

1.48 W

ENHANCEMENT MODE

4.7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.7 A

TPCP8005-H(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

1.68 W

ENHANCEMENT MODE

1

11 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

11 A

TPCP8004(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

1.68 W

ENHANCEMENT MODE

1

8.3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8.3 A

TPCP8003-H(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

1.68 W

ENHANCEMENT MODE

1

2.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.2 A

2SK3388(TE24L,Q)

Toshiba

N-CHANNEL

SINGLE

YES

125 W

ENHANCEMENT MODE

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

20 A

SSM3K310T(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

.7 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

SSM3K316T(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

SSM3K315T(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

6 A

SSM3K35MFV(TPL3)

Toshiba

N-CHANNEL

SINGLE

YES

.15 W

ENHANCEMENT MODE

1

.18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.18 A

SSM6N37CTD(TPL3)

Toshiba

N-CHANNEL

YES

.14 W

ENHANCEMENT MODE

.25 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.25 A

SSM6N42FE(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

.15 W

ENHANCEMENT MODE

1

.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.8 A

TPCA8A04-H(TE12L,Q)

Toshiba

N-CHANNEL

SINGLE

YES

45 W

ENHANCEMENT MODE

1

44 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

44 A

TPC8048-H(TE12L,Q)

Toshiba

N-CHANNEL

SINGLE

YES

1.9 W

ENHANCEMENT MODE

1

16 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

16 A

PSMN3R7-25YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

64 W

ENHANCEMENT MODE

1

97 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

97 A

1

e3

30

260

PSMN1R7-25YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

164 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

PSMN3R2-25YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

79 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

PSMN3R7-30YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

79 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

IRF7807VD2TRPBF

International Rectifier

N-CHANNEL

SINGLE

YES

2.5 W

ENHANCEMENT MODE

1

8.3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

8.3 A

1

e3

30

260

PSMN5R9-30YL,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

63 W

ENHANCEMENT MODE

1

78 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

78 A

1

e3

30

260

2SK3431-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

100 W

ENHANCEMENT MODE

1

83 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

83 A

AOB10N60L

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE

YES

250 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

PMT29EN,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

8.33 W

ENHANCEMENT MODE

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

6 A

1

e3

30

260

PMT29EN,135

NXP Semiconductors

N-CHANNEL

SINGLE

YES

8.33 W

ENHANCEMENT MODE

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

6 A

NX3008NBKT,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.3 W

ENHANCEMENT MODE

1

.35 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.35 A

1

e3

30

260

PMT21EN,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

8.33 W

ENHANCEMENT MODE

1

7.4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

7.4 A

1

e3

30

260

PSMN9R0-25YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

34 W

ENHANCEMENT MODE

1

46 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

46 A

1

e3

30

260

SSM3K15ACT(TPL3)

Toshiba

N-CHANNEL

SINGLE

YES

.1 W

ENHANCEMENT MODE

1

.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

SSM6K411TU(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

2 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

SSM4K27CT(TPL3)

Toshiba

N-CHANNEL

SINGLE

YES

.4 W

ENHANCEMENT MODE

1

.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.5 A

PSMN010-25YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

30 W

ENHANCEMENT MODE

1

39 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

39 A

1

e3

30

260

2SK3816-DL-E

Onsemi

N-CHANNEL

SINGLE

YES

50 W

ENHANCEMENT MODE

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

40 A

1

e6

PSMN012-25YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

26 W

ENHANCEMENT MODE

1

33 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

33 A

1

e3

30

260

AOB1608L

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

333 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

256 A

638 mJ

140 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0073 ohm

11 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

80 pF

AOD4454

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

1.3 mJ

20 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.11 ohm

20 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

31 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.