Diodes Incorporated Power Field Effect Transistors (FET) 389

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
DMC3036LSD-13	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	24 A		6.9 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.036 ohm	6.9 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3		260
DMP3035LSS-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A		12 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.016 ohm	12 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3		260
DMP3100L-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.08 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A		2.7 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.1 ohm	2.7 A	DUAL	R-PDSO-G3	1		Not Qualified	LOW THRESHOLD, HIGH RELIABILITY		e3	30	260
DMP3120L-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.4 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	9 A		2.8 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.12 ohm	2.8 A	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMN2040LSD-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A		7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.026 ohm	7 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMN3031LSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A		9 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.0185 ohm	9 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3		260
DMN3050S-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.035 ohm	5.2 A	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMS2120LFWB-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	10 A		2.9 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		NICKEL PALLADIUM GOLD	.095 ohm	2.9 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified	HIGH RELIABILITY		e4	30	260
DMN3112SSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.057 ohm	6 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMG4435SSS-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A		7.3 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.016 ohm	7.3 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
DMG4710SSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	90 A		12.7 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.0125 ohm	8.8 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMG4712SSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.55 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	63 A		11.2 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.014 ohm	11.2 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMG8880LSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.43 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A		11.6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.01 ohm	11.6 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMG4932LSD-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.19 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	40 A		9.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.015 ohm	9.5 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMG4812SSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.54 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A		8 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.015 ohm	8 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMG8880LK3-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	4.1 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	48 A		16.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.0093 ohm	11 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	HIGH RELIABILITY	TO-252	e3	30	260
DMN3005LK3-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	4.1 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	48 A		22 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.0065 ohm	14.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	HIGH RELIABILITY	TO-252	e3	30	260
DMN2040UVT-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.024 ohm	6.7 A	DUAL	R-PDSO-G6	1					e3		260	83 pF	MIL-STD-202
DMP2075UVT-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	25 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.075 ohm	3.8 A	DUAL	R-PDSO-G6	1					e3		260	87 pF	MIL-STD-202
DMT2004UFV-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.3 W	PLASTIC/EPOXY	SWITCHING	24 V	FLAT	SQUARE	ENHANCEMENT MODE	1	90 A	36 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.01 ohm	70 A	DUAL	S-PDSO-F8	1	DRAIN				e3		260	559 pF	MIL-STD-202
DMT3009LFVWQ-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	35.7 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	90 A	19 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.011 ohm	12 A	DUAL	S-PDSO-F8	1	DRAIN		HIGH RELIABILITY		e3		260	52 pF	AEC-Q101; MIL-STD-202
DMT6005LFG-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	62.5 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	400 A	171 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.007 ohm	100 A	DUAL	S-PDSO-N8		DRAIN				e3		260	69 pF	MIL-STD-202
DMT615MLFV-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	34.72 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	60 A	18.05 mJ	38 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.016 ohm	38 A	DUAL	R-PDSO-F5	1	DRAIN		ESD PROTECTED		e3		260
DMTH3004LFG-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	250 A	110 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.0055 ohm	15 A	DUAL	S-PDSO-N8	3	DRAIN				e3		260	240 pF	MIL-STD-202
DMTH3004LFGQ-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	250 A	110 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.0055 ohm	75 A	DUAL	S-PDSO-N8	3	DRAIN		HIGH RELIABILITY		e3		260	240 pF	AEC-Q101; MIL-STD-202
DMTH6016LFDFWQ-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.3 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	70 A	11.7 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.018 ohm	9.4 A	DUAL	S-PDSO-N6		DRAIN				e3		260	25.4 pF	AEC-Q101; IATF 16949; MIL-STD-202
DMTH6016LFVW-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.38 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	160 A	12.8 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.016 ohm	41 A	DUAL	S-PDSO-F8	1	DRAIN				e3		260	23.4 pF	MIL-STD-202
DMT68M8LFV-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41.7 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	210 A	39 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.0095 ohm	54.1 A	DUAL	S-PDSO-F8	1	DRAIN				e3		260	44 pF	MIL-STD-202
DMT6017LFDF-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.76 W	PLASTIC/EPOXY	SWITCHING	65 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	50 A	18 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	NICKEL PALLADIUM GOLD	.018 ohm	8.1 A	DUAL	S-PDSO-N6	1	DRAIN				e4	30	260	29 pF	MIL-STD-202
DMTH6005LFG-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	75 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	400 A	171 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.0041 ohm	100 A	DUAL	S-PDSO-N8		DRAIN				e3		260	69 pF	MIL-STD-202
DMTH69M8LFVW-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	29.4 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	180 A	45 mJ	45.4 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.0095 ohm	15.9 A	DUAL	S-PDSO-F5	1	DRAIN				e3		260	41 pF
DMN2041UVT-13	Diodes Incorporated	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.44 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	36 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.028 ohm	5.8 A	DUAL	R-PDSO-G6						e3		260	79 pF	MIL-STD-202
DMN22M5UFG-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.2 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	500 A	175 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.0025 ohm	27 A	DUAL	S-PDSO-N5		DRAIN				e3		260	538 pF
DMP2110UVTQ-13	Diodes Incorporated	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.01 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	15 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.15 ohm	1.8 A	DUAL	R-PDSO-G6						e3		260	47 pF	AEC-Q101; IATF 16949; MIL-STD-202
DMT10H072LFDFQ-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	22 A	1.8 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	NICKEL PALLADIUM GOLD	.062 ohm	4 A	DUAL	S-PDSO-N6	1	DRAIN				e4	30	260	2.5 pF	AEC-Q101; IATF 16949; MIL-STD-202
ZXMP7A17GQTC	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	70 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	9.6 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		MATTE TIN	.16 ohm	2.6 A	DUAL	R-PDSO-G4	1	DRAIN		HIGH RELIABILITY		e3	30	260		AEC-Q101
DMN10H170SVT-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.7 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	11.2 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.2 ohm	2.6 A	DUAL	R-PDSO-G6	1					e3		260	25 pF	MIL-STD-202
DMN3016LDN-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	45 A	24 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		.02 ohm	7.3 A	DUAL	S-PDSO-N8	1	DRAIN						260	82 pF
DMP2023UFDF-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.03 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	40 A	27 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	NICKEL PALLADIUM GOLD	.027 ohm	7.6 A	DUAL	S-PDSO-N6	1	DRAIN				e4	30	260	115 pF
DMT3008LFDF-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.1 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	70 A	3.2 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	NICKEL PALLADIUM GOLD	.01 ohm	10.4 A	DUAL	S-PDSO-N6	1	DRAIN				e4	30	260	53 pF	MIL-STD-202
DMT3008LFDF-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.1 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	70 A	3.2 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	NICKEL PALLADIUM GOLD	.01 ohm	10.4 A	DUAL	S-PDSO-N6	1	DRAIN				e4	30	260	53 pF	MIL-STD-202
DMN1019UVT-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	12 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	70 A	4.7 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.01 ohm	10.7 A	DUAL	R-PDSO-G6						e3		260
DMN10H220LVT-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.67 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6.6 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.22 ohm	1.87 A	DUAL	R-PDSO-G6						e3		260	17 pF	MIL-STD-202
ZXMS6002GQTA	Diodes Incorporated	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		550 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		SILICON		MATTE TIN	.675 ohm	1.4 A	DUAL	R-PDSO-G4	1	DRAIN		HIGH RELIABILITY		e3		260		AEC-Q101
ZXMS6006DGQTA	Diodes Incorporated	N-CHANNEL	COMPLEX	YES		PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	13 A	490 mJ		4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-40 Cel	MATTE TIN	.125 ohm		DUAL	R-PDSO-G4	1	DRAIN		HIGH RELIABILITY		e3		260		AEC-Q101
DMP26M7UFG-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.3 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	SQUARE	ENHANCEMENT MODE	1	80 A	28 mJ	18 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.0067 ohm	18 A	DUAL	S-PDSO-F5						e3		260	728 pF
DMN3033LSNQ-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.03 ohm	6 A	DUAL	R-PDSO-G3	1			HIGH RELIABILITY		e3	30	260	108 pF	AEC-Q101
DMNH4011SK3-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A			2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.01 ohm	50 A	SINGLE	R-PSSO-G2		DRAIN			TO-252	e3		260	108 pF	MIL-STD-202

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.