Diodes Incorporated Power Field Effect Transistors (FET) 389

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
DMNH10H028SPSQ-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	54 A	35 mJ		5	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.028 ohm	40 A	DUAL	R-PDSO-F5		DRAIN	HIGH RELIABILITY		e3		260		AEC-Q101
DMTH8012LPS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	100 W	PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	200 A	10.2 mJ		8	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.017 ohm	50 A	DUAL	R-PDSO-F8		DRAIN			e3		260	10 pF	MIL-STD-202
DMC3016LNS-13	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	2	55 A	24 mJ		8	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.02 ohm	9 A	DUAL	S-PDSO-F8	1				e3	30	260	107 pF	MIL-STD-202
DMN2028UVT-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A			6	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.024 ohm	6.2 A	DUAL	R-PDSO-G6	1				e3	30	260	78 pF	MIL-STD-202
DMC3025LNS-13	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	2	45 A	9.8 mJ		8	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.035 ohm	7.2 A	DUAL	S-PDSO-F8	1				e3	30	260	57 pF	MIL-STD-202
DMG10N60SCT	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	178 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	15 A	550 mJ	12 A	3	FLANGE MOUNT	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.75 ohm	12 A	SINGLE	R-PSFM-T3			ESD PROTECTED	TO-220AB	e3		260
DMG8N65SCT	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	125 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	389 mJ	8 A	3	FLANGE MOUNT	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	1.3 ohm	8 A	SINGLE	R-PSFM-T3				TO-220AB	e3		260
DMN60H3D5SK3-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	4.4 A	30 mJ	2.8 A	2	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	3.5 ohm	2.8 A	SINGLE	R-PSSO-G2		DRAIN			e3		260
DMJ70H601SK3-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	700 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15 A	86 mJ		2	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.6 ohm	8 A	SINGLE	R-PSSO-G2	1	DRAIN		TO-252	e3		260
DMN90H8D5HCTI	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	3 A	97 mJ		3	FLANGE MOUNT	METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	7 ohm	2.5 A	SINGLE	R-PSFM-T3		ISOLATED		TO-220AB	e3	30	260
DMP45H4D9HJ3	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	22.4 A	187 mJ		3	IN-LINE	METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	4.9 ohm	4.6 A	SINGLE	R-PSIP-T3	1			TO-251	e3	30	260
DMN3009LFV-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1				8	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.0055 ohm	60 A	DUAL	S-PDSO-N8	1	DRAIN			e3	30	260
DMJ70H1D0SV3	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A	7.5 mJ		3	IN-LINE	METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	1 ohm	6 A	SINGLE	R-PSIP-T3				TO-251	e3	30	260
DMJ70H1D4SV3	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6 A	7.5 mJ		3	IN-LINE	METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	1.5 ohm	5 A	SINGLE	R-PSIP-T3				TO-251	e3	30	260
DMJ70H1D5SV3	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6 A	7.5 mJ		3	IN-LINE	METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	1.5 ohm	5 A	SINGLE	R-PSIP-T3				TO-251	e3	30	260
DMN95H2D2HCTI	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	950 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	360 mJ		3	FLANGE MOUNT	METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	2.2 ohm	6 A	SINGLE	R-PSFM-T3		ISOLATED		TO-220AB	e3	30	260
DMN95H8D5HCTI	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	950 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	3 A	97 mJ		3	FLANGE MOUNT	METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	7 ohm		SINGLE	R-PSFM-T3		ISOLATED		TO-220AB	e3	30	260
DMTH10H005SCT	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	400 A	542 mJ		3	FLANGE MOUNT	METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.005 ohm	140 A	SINGLE	R-PSFM-T3				TO-220AB	e3	30	260
DMP1011LFV-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.16 W	PLASTIC/EPOXY	SWITCHING	12 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	70 A	86 mJ	13 A	5	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0117 ohm	13 A	DUAL	R-PDSO-F5		SOURCE	ESD PROTECTED		e3		260
DMP1011LFV-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.16 W	PLASTIC/EPOXY	SWITCHING	12 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	70 A	86 mJ	13 A	5	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0117 ohm	13 A	DUAL	R-PDSO-F5		SOURCE	ESD PROTECTED		e3		260
DMJ70H600SH3	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	113 W	PLASTIC/EPOXY	SWITCHING	700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	11 A	67.5 mJ	11 A	3	IN-LINE	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.6 ohm	11 A	SINGLE	R-PSIP-T3				TO-251	e3	30	260
DMN1002UCA6-7	Diodes Incorporated	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.47 W	UNSPECIFIED	SWITCHING		NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2				6	CHIP CARRIER	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	4787 ns	-55 Cel	10255 ns	NICKEL PALLADIUM GOLD			BOTTOM	R-XBCC-N6		SOURCE	ESD PROTECTED		e4		260	297 pF
DMN3008SCP10-7	Diodes Incorporated	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	YES	2.7 W	UNSPECIFIED	SWITCHING		NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2				10	CHIP CARRIER	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		NICKEL PALLADIUM GOLD			BOTTOM	R-XBCC-N10	1		ESD PROTECTED		e4		260
DMN60H4D5SK3-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	41 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	2.6 A	33 mJ	2.5 A	2	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	41 ohm	2.5 A	SINGLE	R-PSSO-G2		DRAIN		TO-252	e3	30	260	4.2 pF
DMN80H2D0SCTI	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	41 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A	60 mJ	7 A	3	FLANGE MOUNT	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	2 ohm	7 A	SINGLE	R-PSFM-T3		ISOLATED		TO-220AB	e3	30	260	11 pF
DMT3009LFVW-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	35.7 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	90 A	19 mJ		8	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.011 ohm	12 A	DUAL	S-PDSO-F8		DRAIN			e3		260	52 pF	MIL-STD-202
DMT3006LFV-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	90 A	29 mJ		8	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.007 ohm	60 A	DUAL	S-PDSO-F8	1	DRAIN			e3		260	72 pF	MIL-STD-202
DMN3009SFGQ-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.1 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A	55 mJ		8	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0055 ohm	16 A	DUAL	S-PDSO-N8		DRAIN			e3	30	260	248 pF	AEC-Q101; IATF 16949; MIL-STD-202
DMC2025UFDB-13	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	NO	1.4 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	20 A	8.5 mJ		6	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		NICKEL PALLADIUM GOLD	.035 ohm	6 A	DUAL	R-PDSO-N6		DRAIN			e4	30	260	77 pF	MIL-STD-202
DMT10H072LFDF-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.8 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	22 A	1.8 mJ		6	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		NICKEL PALLADIUM GOLD	.062 ohm	4 A	DUAL	S-PDSO-N6	1	DRAIN			e4	30	260	2.5 pF	MIL-STD-202
DMT3006LFVQ-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	90 A	29 mJ		8	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.007 ohm	60 A	DUAL	S-PDSO-F8	1	DRAIN			e3		260	72 pF	AEC-Q101; MIL-STD-202
DMN3013LDG-13	Diodes Incorporated	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	YES	2.16 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	80 A	28 mJ		8	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR	2.16 W	150 Cel	SILICON		-55 Cel		MATTE TIN	.0177 ohm	9.5 A	DUAL	S-PDSO-N8	1	SOURCE			e3		260	16 pF	MIL-STD-202
DMN3013LDG-7	Diodes Incorporated	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	YES	2.16 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	80 A	28 mJ		8	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR	2.16 W	150 Cel	SILICON		-55 Cel		MATTE TIN	.0177 ohm	9.5 A	DUAL	S-PDSO-N8	1	SOURCE			e3		260	16 pF	MIL-STD-202
DMN3013LFG-13	Diodes Incorporated	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	YES	2.16 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	80 A	28 mJ		8	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR	2.16 W	150 Cel	SILICON		-55 Cel		MATTE TIN	.0177 ohm	9.5 A	DUAL	S-PDSO-N8	1	SOURCE			e3		260	16 pF	MIL-STD-202
DMN3013LFG-7	Diodes Incorporated	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	YES	2.16 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	80 A	28 mJ		8	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR	2.16 W	150 Cel	SILICON		-55 Cel		MATTE TIN	.0177 ohm	9.5 A	DUAL	S-PDSO-N8	1	SOURCE			e3		260	16 pF	MIL-STD-202
DMN3022LDG-13	Diodes Incorporated	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	YES	1.96 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	50 A	28 mJ		8	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR	1.96 W	150 Cel	SILICON		-55 Cel		MATTE TIN	.022 ohm	7.6 A	DUAL	S-PDSO-N8	1	SOURCE			e3		260	10.6 pF	MIL-STD-202
DMN3022LDG-7	Diodes Incorporated	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	YES	1.96 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	50 A	28 mJ		8	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR	1.96 W	150 Cel	SILICON		-55 Cel		MATTE TIN	.022 ohm	7.6 A	DUAL	S-PDSO-N8	1	SOURCE			e3		260	10.6 pF	MIL-STD-202
DMN3022LFG-7	Diodes Incorporated	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	YES	1.96 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	50 A	28 mJ		8	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR	1.96 W	150 Cel	SILICON		-55 Cel		MATTE TIN	.022 ohm	7.6 A	DUAL	S-PDSO-N8	1	SOURCE			e3		260	10.6 pF	MIL-STD-202
DMPH4025SFVWQ-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	60 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	80 A	82 mJ	40 A	5	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.025 ohm	40 A	DUAL	R-PDSO-F5	1	DRAIN	HIGH RELIABILITY		e3		260	151 pF	AEC-Q101
DMT4008LFV-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	35.7 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	70 A	19.2 mJ		8	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0079 ohm	54.8 A	DUAL	S-PDSO-F8	1	DRAIN			e3		260	42 pF	MIL-STD-202
DMT4008LFV-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	35.7 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	70 A	19.2 mJ		8	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0079 ohm	54.8 A	DUAL	S-PDSO-F8	1	DRAIN			e3		260	42 pF	MIL-STD-202
DMT43M8LFV-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45.4 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	98 mJ	87 A	5	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.004 ohm	87 A	DUAL	R-PDSO-G5	1	DRAIN			e3		260	55 pF
DMT43M8LFV-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	45.4 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	98 mJ	87 A	5	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.004 ohm	87 A	DUAL	R-PDSO-G5	1	DRAIN			e3		260	55 pF
DMN4025LSD-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.14 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	29 A		5.6 A	8	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.025 ohm	5.6 A	DUAL	R-PDSO-G8	1		HIGH RELIABILITY		e3	30	260	120 pF	AEC-Q101
DMT2005UDV-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	24 V	FLAT	SQUARE	ENHANCEMENT MODE	2	70 A			6	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR	1.9 W	150 Cel	SILICON		-55 Cel		MATTE TIN	.007 ohm	50 A	DUAL	S-PDSO-F6	1	DRAIN	AVALANCHE ENERGY RATED		e3		260	517 pF
DMT2005UDV-7	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	24 V	FLAT	SQUARE	ENHANCEMENT MODE	2	70 A			6	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR	1.9 W	150 Cel	SILICON		-55 Cel		MATTE TIN	.007 ohm	50 A	DUAL	S-PDSO-F6	1	DRAIN	AVALANCHE ENERGY RATED		e3		260	517 pF
DMN4030LK3Q-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	8.9 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	37.7 A		13.7 A	2	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.03 ohm	13.7 A	SINGLE	R-PSSO-G2			HIGH RELIABILITY		e3		260		AEC-Q101
DMN5040LSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.6 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	25 A	8 mJ	5.2 A	8	SMALL OUTLINE	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-50 Cel		MATTE TIN	.04 ohm	5.2 A	DUAL	R-PDSO-G8	1		HIGH RELIABILITY		e3	30	260	28 pF	AEC-Q101

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.