Renesas Electronics Power Field Effect Transistors (FET) 114

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

NP70N10KUF-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

120 W

1

70 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

70 A

NOT SPECIFIED

NOT SPECIFIED

NP82N03PUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

143 W

1

82 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

82 A

NOT SPECIFIED

NOT SPECIFIED

NP82N055PUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

143 W

1

82 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

82 A

NOT SPECIFIED

NOT SPECIFIED

NP88N03KDG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

200 W

1

88 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

88 A

NOT SPECIFIED

NOT SPECIFIED

NP88N04KUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

200 W

1

88 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

88 A

NOT SPECIFIED

NOT SPECIFIED

NP88N055KUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

200 W

1

88 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

88 A

NOT SPECIFIED

NOT SPECIFIED

NP88N055KUG-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

200 W

1

88 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

88 A

NOT SPECIFIED

NOT SPECIFIED

UPA1727G-E1-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

2 W

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

10 A

e6

UPA1763G-E1-AT

Renesas Electronics

N-CHANNEL

YES

2 W

4.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

4.5 A

e3

260

UPA1763G-E1-A

Renesas Electronics

N-CHANNEL

YES

2 W

4.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

4.5 A

e6

UPA1763G-E2-A

Renesas Electronics

N-CHANNEL

YES

2 W

4.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

4.5 A

e6

UPA1764G-E1-A

Renesas Electronics

N-CHANNEL

YES

2 W

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

7 A

e6

UPA1764G-E2-AZ

Renesas Electronics

N-CHANNEL

YES

2 W

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

7 A

NOT SPECIFIED

NOT SPECIFIED

UPA1803GR-9JG-E1-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

2 W

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

8 A

e6

UPA1890GR-9JG-E1-A

Renesas Electronics

N-CHANNEL AND P-CHANNEL

YES

2 W

6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

6 A

e6

HAF1002-90STL-E

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

30 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.13 ohm

15 A

SINGLE

R-PSSO-G2

DRAIN

UPA2738GR-E2-AX

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.1 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

10 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.029 ohm

10 A

DUAL

R-PDSO-G8

e4

650 pF

NP180N04TUK-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

348 W

1

180 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

180 A

NOT SPECIFIED

NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.