Renesas Electronics Power Field Effect Transistors (FET) 114

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

UPA2630T1R-E2-AX

Renesas Electronics

P-CHANNEL

SINGLE

YES

2.5 W

1

7 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

NICKEL PALLADIUM GOLD

7 A

e4

260

UPA2631T1R-E2-AX

Renesas Electronics

P-CHANNEL

SINGLE

YES

2.5 W

1

6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

NICKEL PALLADIUM GOLD

6 A

e4

260

2SK3510-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

125 W

1

83 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

83 A

NOT SPECIFIED

NOT SPECIFIED

UPA2600T1R-E2-AX

Renesas Electronics

N-CHANNEL

SINGLE

YES

2.4 W

20 V

1

7 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

NICKEL PALLADIUM GOLD

.0191 ohm

7 A

e4

260

UPA2660T1R-E2-AX

Renesas Electronics

N-CHANNEL

YES

2.3 W

20 V

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

NICKEL PALLADIUM GOLD

.062 ohm

4 A

e4

260

UPA2690T1R-E2-AX

Renesas Electronics

N-CHANNEL AND P-CHANNEL

SINGLE

YES

2.3 W

20 V

1

4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

NICKEL PALLADIUM GOLD

.062 ohm

4 A

e4

260

UPA2739T1A-E2-AY

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

83 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

180 A

160 mJ

85 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0028 ohm

85 A

DUAL

R-PDSO-N8

DRAIN

e3

UPA2764T1A-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

83 W

1

130 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

130 A

e3

UPA2765T1A-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

83 W

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

100 A

e3

UPA2766T1A-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

83 W

30 V

1

130 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

.00088 ohm

130 A

e3

2SK1636STR-E

Renesas Electronics

N-CHANNEL

SINGLE

YES

75 W

1

15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

15 A

NOT SPECIFIED

NOT SPECIFIED

2SK3575-AZ

Renesas Electronics

N-CHANNEL

SINGLE

NO

105 W

1

83 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

83 A

10

260

NP36N055HLE-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

120 W

1

36 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

36 A

NOT SPECIFIED

NOT SPECIFIED

2SJ199-T2-AZ

Renesas Electronics

P-CHANNEL

SINGLE

YES

2 W

1

1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1 A

NOT SPECIFIED

NOT SPECIFIED

2SK3058-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

58 W

1

55 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

55 A

NOT SPECIFIED

NOT SPECIFIED

UPA1809GR-9JG-E1-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

2 W

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

8 A

e6

UPA1857GR-9JG-E1-A

Renesas Electronics

N-CHANNEL

YES

1.7 W

3.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

3.8 A

e6

UPA1873GR-9JG-E1-A

Renesas Electronics

N-CHANNEL

YES

2 W

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

6 A

e6

UPA1930TE-T1-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

2 W

1

4.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.5 A

NOT SPECIFIED

NOT SPECIFIED

UPA2752GR-E1-AT

Renesas Electronics

N-CHANNEL

YES

2 W

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

8 A

e3

260

UPA2754GR(0)-E1-AY

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

88 A

12.1 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0186 ohm

11 A

DUAL

R-PDSO-G8

NOT SPECIFIED

NOT SPECIFIED

UPA2794GR(0)-E1-AZ

Renesas Electronics

N-CHANNEL AND P-CHANNEL

YES

2 W

5.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

5.5 A

NOT SPECIFIED

NOT SPECIFIED

2SJ649-AZ

Renesas Electronics

P-CHANNEL

SINGLE

NO

25 W

1

20 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

20 A

10

260

2SK3353(0)-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

95 W

1

82 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

82 A

NOT SPECIFIED

NOT SPECIFIED

2SK3353-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

95 W

1

82 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

82 A

NOT SPECIFIED

NOT SPECIFIED

2SK3430-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

84 W

1

80 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

80 A

NOT SPECIFIED

NOT SPECIFIED

2SK3433(0)-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

47 W

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

40 A

NOT SPECIFIED

NOT SPECIFIED

2SK3435-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

84 W

1

80 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

80 A

NOT SPECIFIED

NOT SPECIFIED

2SK3479-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

125 W

1

83 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

83 A

NOT SPECIFIED

NOT SPECIFIED

2SK3481(0)-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

56 W

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

30 A

NOT SPECIFIED

NOT SPECIFIED

NP22N055SLE-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

55 A

25 mJ

22 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.051 ohm

22 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

NP88N075KUE-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

288 W

1

88 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

88 A

NOT SPECIFIED

NOT SPECIFIED

2SK4151TZ-E

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

4 A

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

.0025 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

2SJ673-AZ

Renesas Electronics

P-CHANNEL

SINGLE

NO

32 W

1

36 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

36 A

10

260

2SK3755-AZ

Renesas Electronics

N-CHANNEL

SINGLE

NO

24 W

1

45 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

45 A

10

260

2SK3793-AZ

Renesas Electronics

N-CHANNEL

SINGLE

NO

20 W

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

12 A

10

260

2SK3811-ZP-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

213 W

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

110 A

NOT SPECIFIED

NOT SPECIFIED

2SK3901(0)-ZK-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

64 W

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

60 A

NOT SPECIFIED

NOT SPECIFIED

2SK3902(0)-ZK-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

45 W

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

30 A

NOT SPECIFIED

NOT SPECIFIED

NP110N03PUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

288 W

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

110 A

NOT SPECIFIED

NOT SPECIFIED

NP110N04PUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

288 W

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

110 A

NOT SPECIFIED

NOT SPECIFIED

NP52N055SUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

56 W

1

52 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

52 A

NOT SPECIFIED

NOT SPECIFIED

NP55N055SDG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

77 W

1

55 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

55 A

NOT SPECIFIED

NOT SPECIFIED

NP55N055SDG-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

77 W

1

55 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

55 A

NOT SPECIFIED

NOT SPECIFIED

NP55N055SUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

77 W

1

55 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

55 A

NOT SPECIFIED

NOT SPECIFIED

NP60N03KUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NOT SPECIFIED

NOT SPECIFIED

NP60N04KUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NOT SPECIFIED

NOT SPECIFIED

NP70N10KUF-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

120 W

1

70 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

70 A

NOT SPECIFIED

NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.