STMicroelectronics Power Field Effect Transistors (FET) 1,058

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

STB40N20

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

160 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

160 A

230 mJ

40 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.045 ohm

40 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

STB60NF10T4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

485 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.023 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

245

STF40N20

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

160 A

230 mJ

40 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.045 ohm

40 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

STF9NK80Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

35 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

350 mJ

7.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

1.2 ohm

7.5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED

TO-220AB

e3

STL100NH3LL

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

80 W

UNSPECIFIED

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

100 A

150 mJ

100 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.005 ohm

25 A

DUAL

R-XDSO-N5

3

DRAIN

Not Qualified

e3

STP270N04

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

330 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

480 A

1000 mJ

120 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn)

.0029 ohm

120 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

STP95N04

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

110 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

400 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn)

.0065 ohm

80 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

STP9NK80Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30 A

350 mJ

7.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

1.2 ohm

7.5 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e3

STS3DPF60L

STMicroelectronics

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

12 A

3 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.16 ohm

3 A

DUAL

R-PDSO-G8

1

Not Qualified

LOW THRESHOLD

e4

STS4C3F60L

STMicroelectronics

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

16 A

3 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.065 ohm

4 A

DUAL

R-PDSO-G8

1

Not Qualified

LOW THRESHOLD

e4

STP120NH03L

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

115 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

700 mJ

60 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0105 ohm

60 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOW THRESHOLD

TO-220AB

40

245

STD2NK70Z-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

700 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

6.4 A

110 mJ

1.6 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

7 ohm

1.6 A

SINGLE

R-PSIP-T3

1

Not Qualified

AVALANCHE RATED

TO-251

e3

30

260

STD2NK70ZT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

PLASTIC/EPOXY

SWITCHING

700 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6.4 A

110 mJ

1.6 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

7 ohm

1.6 A

SINGLE

R-PSSO-G2

1

Not Qualified

AVALANCHE RATED

TO-252AA

e3

30

260

STP5NK90Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

230 mJ

4.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

2.5 ohm

4.5 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e3

STB5NK52ZD-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 W

PLASTIC/EPOXY

SWITCHING

520 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

17.6 A

170 mJ

4.4 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.5 ohm

4.4 A

SINGLE

R-PSIP-T3

Not Qualified

AVALANCHE RATED

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

STD5NK52ZD-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 W

PLASTIC/EPOXY

SWITCHING

520 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

17.6 A

170 mJ

4.4 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.5 ohm

4.4 A

SINGLE

R-PSIP-T3

1

Not Qualified

AVALANCHE RATED

TO-251AA

e3

30

260

STD5NK52ZD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

70 W

PLASTIC/EPOXY

SWITCHING

520 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

17.6 A

170 mJ

4.4 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

1.5 ohm

4.4 A

SINGLE

R-PSSO-G2

1

Not Qualified

AVALANCHE RATED

TO-252AA

e3

30

260

STB75N20

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

190 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

205 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.034 ohm

75 A

SINGLE

R-PSSO-G2

Not Qualified

STB8NM60D

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

100 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

32 A

200 mJ

8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1 ohm

8 A

SINGLE

R-PSSO-G2

1

Not Qualified

AVALANCHE RATED

e3

STD4NK50ZD-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

120 mJ

3 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

2.7 ohm

3 A

SINGLE

R-PSIP-T3

1

Not Qualified

TO-251

e3

30

260

STD4NK50ZD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12 A

120 mJ

3 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

2.7 ohm

3 A

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252

e3

30

260

STF4NK50ZD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

120 mJ

3 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

2.7 ohm

3 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

STFV4N150

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

40 W

PLASTIC/EPOXY

SWITCHING

1500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

350 mJ

4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

7 ohm

4 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

STP4NK50ZD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

45 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

120 mJ

3 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

2.7 ohm

3 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STP75N20

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

205 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.034 ohm

75 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STP8NM60D

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

100 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

200 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

1 ohm

8 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e3

STW120NF10

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

312 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

440 A

550 mJ

120 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn)

.0105 ohm

110 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247

e3

STW12NK95Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

950 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

500 mJ

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.9 ohm

10 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247AC

e3

STW75N20

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

205 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.034 ohm

75 A

SINGLE

R-PSFM-T3

1

Not Qualified

TO-247

e3

STP30N20

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

140 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.075 ohm

30 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

STW30N20

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

140 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.075 ohm

30 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247

STD36NH02L

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

PLASTIC/EPOXY

SWITCHING

24 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

200 mJ

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.026 ohm

30 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

STD90N02L-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 W

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

360 mJ

60 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.006 ohm

60 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

LOW THRESHOLD

TO-251

STD90N02L

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

70 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

360 mJ

60 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.006 ohm

60 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOW THRESHOLD

e3

STK850

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

5.2 W

UNSPECIFIED

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

120 A

1400 mJ

30 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0035 ohm

30 A

DUAL

R-XDSO-N4

1

SOURCE

Not Qualified

e3

30

260

STL60NH3LL

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

60 W

UNSPECIFIED

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

64 A

150 mJ

30 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0105 ohm

16 A

DUAL

R-XDSO-N5

3

DRAIN

Not Qualified

LOW THRESHOLD

e3

STK800

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

5.2 W

UNSPECIFIED

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

80 A

1000 mJ

20 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0098 ohm

20 A

DUAL

R-XDSO-N4

1

SOURCE

Not Qualified

e3

30

260

STB76NF75

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

700 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.011 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

245

STB76NF80

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

700 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.011 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

STD70NS04ZL

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

110 W

PLASTIC/EPOXY

SWITCHING

33 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

280 A

650 mJ

70 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.0125 ohm

70 A

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252

e3

30

260

STI76NF75

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

700 mJ

80 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.011 ohm

80 A

SINGLE

R-PSIP-T3

Not Qualified

TO-262AA

e3

STL23NM60ND

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

UNSPECIFIED

SWITCHING

600 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

78 A

700 mJ

19.5 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.18 ohm

19.5 A

DUAL

S-XDSO-N4

3

DRAIN

Not Qualified

e3

30

260

STL60N32N3LL

STMicroelectronics

N-CHANNEL

SERIES, 2 ELEMENTS

YES

50 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

48 A

60 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.12 ohm

32 A

DUAL

R-PDSO-N4

3

DRAIN

Not Qualified

e3

30

260

STS15N4LLF5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

63.6 A

1090 mJ

15 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.0083 ohm

15 A

DUAL

R-PDSO-G8

1

Not Qualified

e4

40

260

STS1DN45K3

STMicroelectronics

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

1.7 W

PLASTIC/EPOXY

SWITCHING

450 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

2 A

.5 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

3.8 ohm

.5 A

DUAL

R-PDSO-G8

1

Not Qualified

e4

40

260

STB13NM60N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

90 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

44 A

200 mJ

11 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.36 ohm

11 A

SINGLE

R-PSSO-G2

1

Not Qualified

TO-263AB

e3

30

245

STB95N3LLH6

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

70 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

150 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.007 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

245

STD120N4F6

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

110 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

394 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.004 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.