STMicroelectronics Power Field Effect Transistors (FET) 1,058

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

STI45N10F7

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

180 A

190 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

.018 ohm

45 A

SINGLE

R-PSIP-T3

DRAIN

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

STF9N65M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

105 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.9 ohm

5 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

.9 pF

STP16N50M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

110 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

52 A

215 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.28 ohm

13 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

1.35 pF

STP16N65M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

110 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

360 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.36 ohm

11 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

1.1 pF

STP7N65M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

103 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

1.15 ohm

5 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

.8 pF

STU9N65M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

105 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.9 ohm

5 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

NOT SPECIFIED

NOT SPECIFIED

.9 pF

STD19NF20

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

60 A

110 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

.16 ohm

15 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

STB24N65M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

150 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

64 A

650 mJ

16 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.23 ohm

16 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

STF10N105K5

STMicroelectronics

N-CHANNEL

SINGLE

NO

30 W

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

6 A

NOT SPECIFIED

NOT SPECIFIED

STF11N50M2

STMicroelectronics

N-CHANNEL

SINGLE

NO

25 W

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

NOT SPECIFIED

NOT SPECIFIED

STF24N65M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

30 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

64 A

650 mJ

16 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.23 ohm

16 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STF5N105K5

STMicroelectronics

N-CHANNEL

SINGLE

NO

25 W

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

NOT SPECIFIED

NOT SPECIFIED

STFI13N80K5

STMicroelectronics

N-CHANNEL

SINGLE

NO

35 W

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

12 A

NOT SPECIFIED

NOT SPECIFIED

STFW2N105K5

STMicroelectronics

N-CHANNEL

SINGLE

NO

30 W

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

2 A

NOT SPECIFIED

NOT SPECIFIED

STH175N4F6-2AG

STMicroelectronics

N-CHANNEL

SINGLE

YES

150 W

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

120 A

NOT SPECIFIED

NOT SPECIFIED

STH175N4F6-6AG

STMicroelectronics

N-CHANNEL

SINGLE

YES

150 W

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

120 A

NOT SPECIFIED

NOT SPECIFIED

STH185N10F3-2

STMicroelectronics

N-CHANNEL

SINGLE

YES

315 W

1

180 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

180 A

NOT SPECIFIED

NOT SPECIFIED

STH185N10F3-6

STMicroelectronics

N-CHANNEL

SINGLE

YES

315 W

1

180 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

180 A

NOT SPECIFIED

NOT SPECIFIED

STH240N10F7-2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

720 A

500 mJ

180 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0025 ohm

180 A

SINGLE

R-PSSO-G2

DRAIN

ULTRA LOW RESISTANCE

NOT SPECIFIED

NOT SPECIFIED

STH265N6F6-2AG

STMicroelectronics

N-CHANNEL

SINGLE

YES

300 W

1

180 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

180 A

NOT SPECIFIED

NOT SPECIFIED

STH265N6F6-6AG

STMicroelectronics

N-CHANNEL

SINGLE

YES

300 W

1

180 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

180 A

NOT SPECIFIED

NOT SPECIFIED

STI18N65M2

STMicroelectronics

N-CHANNEL

SINGLE

NO

110 W

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

12 A

NOT SPECIFIED

NOT SPECIFIED

STL260N3LLH6

STMicroelectronics

N-CHANNEL

SINGLE

YES

166 W

1

260 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

260 A

1

e3

260

STL62P3LLH6

STMicroelectronics

P-CHANNEL

SINGLE

YES

100 W

1

62 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

62 A

NOT SPECIFIED

NOT SPECIFIED

STP13N65M2

STMicroelectronics

N-CHANNEL

SINGLE

NO

110 W

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

NOT SPECIFIED

NOT SPECIFIED

STP24N65M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

64 A

650 mJ

16 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.23 ohm

16 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STP33N65M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

190 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

96 A

780 mJ

24 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.14 ohm

24 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STP40N65M2

STMicroelectronics

N-CHANNEL

SINGLE

NO

250 W

1

32 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

32 A

NOT SPECIFIED

NOT SPECIFIED

STU13N65M2

STMicroelectronics

N-CHANNEL

SINGLE

NO

110 W

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

NOT SPECIFIED

NOT SPECIFIED

STU7N105K5

STMicroelectronics

N-CHANNEL

SINGLE

NO

110 W

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

NOT SPECIFIED

NOT SPECIFIED

STW10N105K5

STMicroelectronics

N-CHANNEL

SINGLE

NO

130 W

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

6 A

NOT SPECIFIED

NOT SPECIFIED

STW48N60M2-4

STMicroelectronics

N-CHANNEL

SINGLE

NO

300 W

1

42 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

42 A

NOT SPECIFIED

NOT SPECIFIED

STW48N60M2

STMicroelectronics

N-CHANNEL

SINGLE

NO

300 W

1

42 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

42 A

e3

STW7N105K5

STMicroelectronics

N-CHANNEL

SINGLE

NO

110 W

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

NOT SPECIFIED

NOT SPECIFIED

STB120N10F4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

390 A

215 mJ

120 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.01 ohm

120 A

SINGLE

R-PSSO-G2

DRAIN

AVALANCHE RATED

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

STF12N50M2

STMicroelectronics

N-CHANNEL

SINGLE

NO

85 W

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

NOT SPECIFIED

NOT SPECIFIED

STH160N4LF6-2

STMicroelectronics

N-CHANNEL

SINGLE

YES

150 W

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

120 A

NOT SPECIFIED

NOT SPECIFIED

STL86N3LLH6AG

STMicroelectronics

N-CHANNEL

SINGLE

YES

60 W

30 V

1

80 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.0076 ohm

80 A

NOT SPECIFIED

NOT SPECIFIED

STP120N10F4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

300 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

390 A

215 mJ

120 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.01 ohm

120 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

STP160N4LF6

STMicroelectronics

N-CHANNEL

SINGLE

NO

150 W

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

120 A

NOT SPECIFIED

NOT SPECIFIED

STP265N6F6AG

STMicroelectronics

N-CHANNEL

SINGLE

NO

300 W

1

180 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

180 A

NOT SPECIFIED

NOT SPECIFIED

STW28N65M2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

170 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

760 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.18 ohm

20 A

SINGLE

R-PSFM-T3

TO-247

NOT SPECIFIED

NOT SPECIFIED

STW56N60M2

STMicroelectronics

N-CHANNEL

SINGLE

NO

350 W

1

52 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

52 A

NOT SPECIFIED

NOT SPECIFIED

STW56N65M2-4

STMicroelectronics

N-CHANNEL

SINGLE

NO

358 W

1

49 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

49 A

NOT SPECIFIED

NOT SPECIFIED

STW56N65M2

STMicroelectronics

N-CHANNEL

SINGLE

NO

358 W

1

49 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

49 A

NOT SPECIFIED

NOT SPECIFIED

STFW42N60M2-EP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

63 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

136 A

800 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.087 ohm

34 A

SINGLE

R-PSFM-T3

ISOLATED

NOT SPECIFIED

NOT SPECIFIED

2.5 pF

STP42N60M2-EP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

136 A

800 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.087 ohm

34 A

SINGLE

R-PSFM-T3

DRAIN

BULK: 1000

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

2.5 pF

STW42N60M2-EP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

250 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

136 A

800 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.087 ohm

34 A

SINGLE

R-PSFM-T3

DRAIN

BULK: 1000

TO-247

NOT SPECIFIED

NOT SPECIFIED

2.5 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.