SINGLE Small Signal Field Effect Transistors (FET) 134

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

SFT1407-TL-E

Onsemi

N-CHANNEL

SINGLE

YES

20 W

PLASTIC/EPOXY

SWITCHING

45 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

1 W

SILICON

Tin/Bismuth (Sn/Bi)

.028 ohm

14 A

SINGLE

R-PSSO-G2

1

DRAIN

e6

190 pF

SMMBF4391LT1G

Onsemi

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

-55 Cel

TIN

30 ohm

DUAL

R-PDSO-G3

1

TO-236

e3

260

3.5 pF

AEC-Q101

NVF2201NT1G

Onsemi

N-CHANNEL

SINGLE

YES

.15 W

1

.3 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.3 A

1

e3

30

260

NTMFS4C06NT3G

Onsemi

N-CHANNEL

SINGLE

YES

30.5 W

1

69 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

69 A

1

e3

30

260

NTTFS3A08PZTAG

Onsemi

P-CHANNEL

SINGLE

YES

4.9 W

1

22 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

22 A

1

e3

30

260

DMN3030LFG-13

Diodes Incorporated

N-CHANNEL

SINGLE

YES

2.3 W

1

8.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

8.6 A

1

e3

30

260

DMN3030LFG-7

Diodes Incorporated

N-CHANNEL

SINGLE

YES

2.3 W

1

8.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

8.6 A

1

e3

30

260

NTNS3A65PZT5G

Onsemi

P-CHANNEL

SINGLE

YES

.218 W

1

.281 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

NICKEL PALLADIUM GOLD

.281 A

1

e4

30

260

NTTFS4C25NTWG

Onsemi

N-CHANNEL

SINGLE

YES

20.2 W

1

27 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

27 A

1

e3

30

260

NTZS3151PT1H

Onsemi

P-CHANNEL

SINGLE

YES

.21 W

1

.86 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.86 A

1

e3

30

260

DMP2225LQ-7

Diodes Incorporated

P-CHANNEL

SINGLE

YES

1.08 W

1

2.6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

2.6 A

1

e3

30

260

NTLUS3A18PZCTAG

Onsemi

P-CHANNEL

SINGLE

YES

3.8 W

1

8.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

8.2 A

1

e3

30

260

NTLUS3A18PZCTBG

Onsemi

P-CHANNEL

SINGLE

YES

3.8 W

1

8.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

8.2 A

1

e3

30

260

SFT1345-TL-H

Onsemi

P-CHANNEL

SINGLE

YES

35 W

1

11 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

TIN BISMUTH

11 A

1

e6

30

260

5LN01SP-AC

Onsemi

N-CHANNEL

SINGLE

NO

.25 W

1

.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)

.1 A

e2

5LP01SS-TL-E

Onsemi

P-CHANNEL

SINGLE

YES

.15 W

1

.07 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

.07 A

1

e6

MCH3376-TL-E

Onsemi

P-CHANNEL

SINGLE

YES

.8 W

1

1.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

1.5 A

1

e6

30

260

SCH1330-TL-H

Onsemi

P-CHANNEL

SINGLE

YES

1 W

1

1.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

1.5 A

1

e6

30

260

SCH1332-TL-H

Onsemi

P-CHANNEL

SINGLE

YES

1 W

1

2.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

2.5 A

1

e6

30

260

SCH1343-TL-H

Onsemi

P-CHANNEL

SINGLE

YES

1 W

1

3.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

3.5 A

1

e6

SCH1345-TL-H

Onsemi

P-CHANNEL

SINGLE

YES

1 W

1

4.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

4.5 A

1

e6

30

260

BS107PSTOA

Zetex Plc

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

200 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

MATTE TIN

23 ohm

.12 A

SINGLE

R-PSIP-W3

1

Not Qualified

e3

10

260

BS107PSTOB

Zetex Plc

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

200 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

MATTE TIN

23 ohm

.12 A

SINGLE

R-PSIP-W3

1

Not Qualified

e3

10

260

ZVNL120ASTOB

Zetex Plc

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

200 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

MATTE TIN

10 ohm

.18 A

SINGLE

R-PSIP-W3

1

Not Qualified

e3

ZVN4424ASTOA

Zetex Plc

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

240 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

MATTE TIN

6 ohm

.26 A

SINGLE

R-PSIP-W3

1

Not Qualified

e3

ZVN4424ASTOB

Zetex Plc

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

240 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

MATTE TIN

6 ohm

.26 A

SINGLE

R-PSIP-W3

1

Not Qualified

e3

ZVN0545ASTOB

Zetex Plc

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

450 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

MATTE TIN

50 ohm

.09 A

SINGLE

R-PSIP-W3

1

Not Qualified

e3

ZVN4206ASTOA

Zetex Plc

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

60 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

MATTE TIN

1.5 ohm

.6 A

SINGLE

R-PSIP-W3

1

Not Qualified

e3

10

260

ZVN4206ASTOB

Zetex Plc

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

60 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

MATTE TIN

1.5 ohm

.6 A

SINGLE

R-PSIP-W3

1

Not Qualified

e3

10

260

ZVP2110ASTOA

Zetex Plc

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

100 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

MATTE TIN

8 ohm

.23 A

SINGLE

R-PSIP-W3

1

Not Qualified

e3

10

260

ZVP2110ASTOB

Zetex Plc

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

100 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

MATTE TIN

8 ohm

.23 A

SINGLE

R-PSIP-W3

1

Not Qualified

e3

ZVP4424ASTOB

Zetex Plc

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

240 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

MATTE TIN

15 ohm

.2 A

SINGLE

R-PSIP-W3

1

Not Qualified

e3

ZVP3306ASTOB

Zetex Plc

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

60 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

MATTE TIN

14 ohm

.16 A

SINGLE

R-PSIP-W3

1

Not Qualified

e3

ZVP3306ASTZ

Zetex Plc

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

60 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

MATTE TIN

14 ohm

.16 A

SINGLE

R-PSIP-W3

1

Not Qualified

e3

10

260

ZVP2106ASTOB

Zetex Plc

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

60 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

MATTE TIN

5 ohm

.28 A

SINGLE

R-PSIP-W3

1

Not Qualified

e3

10

260

2SJ600-Z-E1-AZ

Renesas Electronics

P-CHANNEL

SINGLE

YES

45 W

1

25 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

25 A

NOT SPECIFIED

NOT SPECIFIED

2SK3386(0)-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

40 W

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

34 A

NOT SPECIFIED

NOT SPECIFIED

2SK3402(0)-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

40 W

1

36 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

36 A

NOT SPECIFIED

NOT SPECIFIED

UPA1917TE-T1-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

2 W

1

6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

6 A

NOT SPECIFIED

NOT SPECIFIED

2SJ624-T1B-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

1.25 W

1

4.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.5 A

NOT SPECIFIED

NOT SPECIFIED

2SJ648-T1-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

.2 W

1

.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

.4 A

e6

2SK3385(0)-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

36 W

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

30 A

NOT SPECIFIED

NOT SPECIFIED

2SK3483(0)-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

40 W

1

28 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

28 A

NOT SPECIFIED

NOT SPECIFIED

2SK3484(0)-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

30 W

1

16 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

16 A

NOT SPECIFIED

NOT SPECIFIED

PCP1405-TD-H

Onsemi

N-CHANNEL

SINGLE

YES

3.5 W

1

.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

.6 A

1

e6

30

260

PN4303/D26Z

National Semiconductor

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

3 pF

2N5457/D26Z

National Semiconductor

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

3 pF

2N5457/D27Z

National Semiconductor

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

3 pF

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.