SINGLE Small Signal Field Effect Transistors (FET) 134

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2SK3813-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

84 W

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

60 A

NOT SPECIFIED

NOT SPECIFIED

UPA1804GR-9JG-E1-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

2 W

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

8 A

e6

UPA1815GR-9JG-E1-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

2 W

1

7 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

7 A

e6

MCH3477-TL-E

Onsemi

N-CHANNEL

SINGLE

YES

1 W

1

4.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

4.5 A

1

e6

2SJ325-AY

Renesas Electronics

P-CHANNEL

SINGLE

NO

20 W

1

4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

NOT SPECIFIED

NOT SPECIFIED

2SJ325-Z-AY

Renesas Electronics

P-CHANNEL

SINGLE

YES

20 W

1

4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

NOT SPECIFIED

NOT SPECIFIED

2SJ325-Z-E1-AZ

Renesas Electronics

P-CHANNEL

SINGLE

YES

20 W

1

4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

NOT SPECIFIED

NOT SPECIFIED

2N5460G

Onsemi

P-CHANNEL

SINGLE

NO

.35 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

135 Cel

SILICON

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

40

260

2 pF

BFR30LT1G

Onsemi

N-CHANNEL

SINGLE

YES

.3 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

40

260

1.5 pF

MMBF5460LT1G

Onsemi

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

2 pF

BFR31LT1G

Onsemi

N-CHANNEL

SINGLE

YES

.3 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

40

260

1.5 pF

J110G

Onsemi

N-CHANNEL

SINGLE

NO

.31 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

135 Cel

SILICON

TIN SILVER COPPER

18 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

15 pF

MMBF5457LT1G

Onsemi

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

3 pF

2N5457G

Onsemi

N-CHANNEL

SINGLE

NO

.31 W

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e1

40

260

3 pF

2N5638RLRAG

Onsemi

N-CHANNEL

SINGLE

NO

.31 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

TIN SILVER COPPER

30 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-226AA

e1

260

4 pF

2N5639RLRAG

Onsemi

N-CHANNEL

SINGLE

NO

.31 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

TIN SILVER COPPER

60 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

4 pF

BSR58LT1G

Onsemi

N-CHANNEL

SINGLE

YES

.35 W

PLASTIC/EPOXY

CHOPPER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

60 ohm

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

5 pF

J110RLRAG

Onsemi

N-CHANNEL

SINGLE

NO

.31 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

135 Cel

SILICON

TIN SILVER COPPER

18 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

15 pF

J111RL1G

Onsemi

N-CHANNEL

SINGLE

NO

.35 W

PLASTIC/EPOXY

CHOPPER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

TIN SILVER COPPER

30 ohm

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e1

260

5 pF

J111RLRAG

Onsemi

N-CHANNEL

SINGLE

NO

.35 W

PLASTIC/EPOXY

CHOPPER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

TIN SILVER COPPER

30 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

5 pF

J111RLRPG

Onsemi

N-CHANNEL

SINGLE

NO

.35 W

PLASTIC/EPOXY

CHOPPER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

TIN SILVER COPPER

30 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

5 pF

J112G

Onsemi

N-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

CHOPPER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

TIN SILVER COPPER

50 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

5 pF

J112RL1G

Onsemi

N-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

CHOPPER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

TIN SILVER COPPER

50 ohm

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e1

260

5 pF

J112RLRAG

Onsemi

N-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

CHOPPER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

TIN SILVER COPPER

50 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

5 pF

MPF4392G

Onsemi

N-CHANNEL

SINGLE

NO

.625 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

Tin/Silver/Copper (Sn/Ag/Cu)

60 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

40

260

3.5 pF

MPF4393G

Onsemi

N-CHANNEL

SINGLE

NO

.625 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

Tin/Silver/Copper (Sn/Ag/Cu)

100 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

40

260

3.5 pF

NTMFS4C05NT1G-001

Onsemi

N-CHANNEL

SINGLE

YES

33 W

1

78 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

78 A

NTMFS4C06NT1G-001

Onsemi

N-CHANNEL

SINGLE

YES

30.5 W

1

69 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

69 A

NTMFS4C08NT1G-001

Onsemi

N-CHANNEL

SINGLE

YES

25.5 W

1

52 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

52 A

NTMFS4C10NT1G-001

Onsemi

N-CHANNEL

SINGLE

YES

23.6 W

1

46 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

46 A

SFT1341-TL-W

Onsemi

P-CHANNEL

SINGLE

YES

15 W

1

10 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

10 A

1

e6

30

260

SFT1341-W

Onsemi

P-CHANNEL

SINGLE

NO

15 W

1

10 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

10 A

e6

SFT1342-TL-W

Onsemi

P-CHANNEL

SINGLE

YES

15 W

1

12 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

12 A

1

e6

30

260

SFT1342-W

Onsemi

P-CHANNEL

SINGLE

NO

15 W

1

12 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

12 A

e6

MCH3486-TL-W

Onsemi

N-CHANNEL

SINGLE

YES

1 W

1

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

2 A

1

e6

30

260

2SK2963(TE12L,F)

Toshiba

N-CHANNEL

SINGLE

YES

1.5 W

1

1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1 A

DMG7401SFGQ-13

Diodes Incorporated

P-CHANNEL

SINGLE

YES

2.2 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.011 ohm

9.8 A

DUAL

R-PDSO-N5

1

DRAIN

HIGH RELIABILITY

e3

260

391 pF

AEC-Q101

DMG7401SFGQ-7

Diodes Incorporated

P-CHANNEL

SINGLE

YES

2.2 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.011 ohm

9.8 A

DUAL

R-PDSO-N5

1

DRAIN

HIGH RELIABILITY

e3

260

391 pF

AEC-Q101

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.