| Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Nominal Transition Frequency (fT) | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Maximum Collector-Base Capacitance | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Feedback Capacitance (Crss) | Reference Standard |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
240 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
6 ohm |
.29 A |
SINGLE |
R-PSSO-F3 |
DRAIN |
LOGIC LEVEL COMPATIBLE |
e3 |
7.3 pF |
|||||||||||||||||||||||||
|
|
Taiwan Semiconductor |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.13 ohm |
2.8 A |
DUAL |
R-PDSO-G3 |
ULTRA LOW RESISTANCE |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
12 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
NICKEL PALLADIUM GOLD |
.025 ohm |
6 A |
DUAL |
S-PDSO-N6 |
DRAIN |
e4 |
260 |
||||||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2.2 W |
PLASTIC/EPOXY |
SWITCHING |
12 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
.029 ohm |
5.6 A |
DUAL |
S-PDSO-N6 |
DRAIN |
e4 |
260 |
119 pF |
||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
NICKEL PALLADIUM GOLD |
.04 ohm |
4.7 A |
DUAL |
S-PDSO-N6 |
1 |
DRAIN |
e4 |
260 |
|||||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
NICKEL PALLADIUM GOLD |
.035 ohm |
5.5 A |
DUAL |
R-PDSO-N6 |
DRAIN |
e4 |
260 |
||||||||||||||||||||||||||
|
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
NICKEL PALLADIUM GOLD |
.016 ohm |
9 A |
DUAL |
S-PDSO-N6 |
1 |
DRAIN |
HIGH RELIABILITY |
e4 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||||||
|
|
Diodes Incorporated |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
NICKEL PALLADIUM GOLD |
.09 ohm |
3.2 A |
DUAL |
S-PDSO-N6 |
DRAIN |
e4 |
260 |
||||||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
.04 ohm |
4.7 A |
DUAL |
S-PDSO-N6 |
DRAIN |
e4 |
260 |
||||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.03 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
.2 ohm |
2.9 A |
DUAL |
S-PDSO-N6 |
DRAIN |
e4 |
260 |
25 pF |
||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
1 ohm |
.65 A |
DUAL |
R-PDSO-G6 |
1 |
e3 |
30 |
260 |
6.8 pF |
|||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.025 ohm |
4.2 A |
DUAL |
R-PDSO-G3 |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.4 W |
PLASTIC/EPOXY |
SWITCHING |
12 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
.029 ohm |
5.6 A |
DUAL |
S-PDSO-N6 |
DRAIN |
e4 |
260 |
119 pF |
||||||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN BISMUTH |
.25 ohm |
1.8 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236 |
e6 |
30 |
260 |
||||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL AND P-CHANNEL |
COMPLEX |
YES |
1.2 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
4 ohm |
3.2 A |
DUAL |
R-PDSO-G6 |
HIGH RELIABILITY |
e3 |
260 |
47 pF |
||||||||||||||||||||||
|
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
NICKEL PALLADIUM GOLD |
.0145 ohm |
10.2 A |
DUAL |
R-PDSO-N4 |
DRAIN |
HIGH RELIABILITY |
e4 |
260 |
686 pF |
AEC-Q101 |
|||||||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN BISMUTH |
.295 ohm |
1.6 A |
DUAL |
R-PDSO-F3 |
1 |
e6 |
30 |
260 |
|||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
Tin/Bismuth (Sn/Bi) |
.038 ohm |
4.5 A |
DUAL |
R-PDSO-F3 |
1 |
e6 |
|||||||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL AND P-CHANNEL |
COMMON SUBSTRATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.3 W |
PLASTIC/EPOXY |
SWITCHING |
12 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.055 ohm |
3.9 A |
DUAL |
R-PDSO-G6 |
HIGH RELIABILITY |
e3 |
260 |
3.3 pF |
||||||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.625 W |
PLASTIC/EPOXY |
SWITCHING |
12 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.06 ohm |
2.7 A |
DUAL |
R-PDSO-G6 |
1 |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-40 Cel |
MATTE TIN |
.6 ohm |
DUAL |
R-PDSO-G4 |
1 |
SOURCE |
HIGH RELIABILITY |
e3 |
260 |
AEC-Q101 |
||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-40 Cel |
MATTE TIN |
.125 ohm |
DUAL |
R-PDSO-G8 |
1 |
HIGH RELIABILITY |
e3 |
260 |
AEC-Q101 |
|||||||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN BISMUTH |
.137 ohm |
2.5 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236 |
e6 |
30 |
260 |
||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN BISMUTH |
.188 ohm |
1.8 A |
DUAL |
R-PDSO-F6 |
1 |
e6 |
30 |
260 |
|||||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.6 ohm |
DUAL |
R-PDSO-G8 |
1 |
HIGH RELIABILITY |
e3 |
260 |
AEC-Q101 |
|||||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.25 ohm |
DUAL |
R-PDSO-G4 |
1 |
SOURCE |
HIGH RELIABILITY |
e3 |
260 |
AEC-Q101 |
||||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.125 ohm |
DUAL |
R-PDSO-G4 |
1 |
SOURCE |
HIGH RELIABILITY |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||||||
|
|
Texas Instruments |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.8 W |
PLASTIC/EPOXY |
SWITCHING |
12 V |
BALL |
SQUARE |
ENHANCEMENT MODE |
1 |
29 A |
4 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN SILVER COPPER |
.0285 ohm |
1.6 A |
BOTTOM |
S-PBGA-B4 |
1 |
ULTRA LOW RESISTANCE |
e1 |
30 |
260 |
196 pF |
|||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
Tin/Bismuth (Sn/Bi) |
.303 ohm |
1.6 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236 |
e6 |
||||||||||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.9 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN BISMUTH |
.215 ohm |
2 A |
DUAL |
R-PDSO-F3 |
1 |
e6 |
30 |
260 |
|||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL SEMICONDUCTOR |
150 Cel |
SILICON |
TIN BISMUTH |
.05 ohm |
4 A |
DUAL |
R-PDSO-F3 |
1 |
e6 |
30 |
260 |
|||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.8 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN BISMUTH |
.104 ohm |
2 A |
DUAL |
R-PDSO-F3 |
1 |
e6 |
30 |
260 |
|||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.4 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
2 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.085 ohm |
2.4 A |
DUAL |
S-PDSO-F8 |
e3 |
260 |
||||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.53 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.4 ohm |
.87 A |
DUAL |
R-PDSO-F6 |
1 |
e3 |
30 |
260 |
5.37 pF |
AEC-Q101; IATF 16949; MIL-STD-202 |
||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.07 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0186 ohm |
5.3 A |
DUAL |
S-PDSO-N5 |
DRAIN |
HIGH RELIABILITY |
e3 |
260 |
70 pF |
AEC-Q101 |
||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.75 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.024 ohm |
6.2 A |
DUAL |
R-PDSO-G6 |
e3 |
260 |
37 pF |
|||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
50 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
3 ohm |
.305 A |
DUAL |
R-PDSO-G6 |
HIGH RELIABILITY |
e3 |
260 |
5 pF |
AEC-Q101 |
||||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
-55 Cel |
MATTE TIN |
5 ohm |
.21 A |
DUAL |
R-PDSO-G3 |
HIGH RELIABILITY |
e3 |
260 |
AEC-Q101 |
||||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
2.4 ohm |
.47 A |
DUAL |
R-PDSO-G3 |
1 |
e3 |
260 |
||||||||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.2 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN BISMUTH |
.25 ohm |
1.7 A |
DUAL |
R-PDSO-G3 |
1 |
e6 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1 W |
PLASTIC/EPOXY |
AMPLIFIER |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN BISMUTH |
.137 ohm |
2.5 A |
DUAL |
R-PDSO-F8 |
1 |
e6 |
30 |
260 |
|||||||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
12 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN BISMUTH |
.069 ohm |
3.5 A |
DUAL |
R-PDSO-F3 |
1 |
e6 |
30 |
260 |
||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.12 W |
PLASTIC/EPOXY |
SWITCHING |
12 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
3 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
.48 ohm |
.384 A |
SINGLE |
S-PBCC-N3 |
1 |
DRAIN |
e4 |
30 |
260 |
|||||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
12 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN BISMUTH |
.07 ohm |
3 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236 |
e6 |
30 |
260 |
||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.53 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0114 ohm |
6.1 A |
DUAL |
S-PDSO-N3 |
1 |
DRAIN |
ULTRA LOW RESISTANCE |
e3 |
30 |
260 |
||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN BISMUTH |
.08 ohm |
3 A |
DUAL |
R-PDSO-F8 |
1 |
e6 |
30 |
260 |
|||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.7 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.021 ohm |
4.8 A |
DUAL |
S-PDSO-N6 |
1 |
DRAIN |
e3 |
30 |
260 |
|||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.019 ohm |
11 A |
DUAL |
S-PDSO-F5 |
DRAIN |
Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.
Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.
The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.