YES Small Signal Field Effect Transistors (FET) 899

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

BSS87H6327XTSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

240 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

6 ohm

.29 A

SINGLE

R-PSSO-F3

DRAIN

LOGIC LEVEL COMPATIBLE

e3

7.3 pF

TSM2301CXRFG

Taiwan Semiconductor

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.13 ohm

2.8 A

DUAL

R-PDSO-G3

ULTRA LOW RESISTANCE

NOT SPECIFIED

NOT SPECIFIED

DMC1028UFDB-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

12 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

NICKEL PALLADIUM GOLD

.025 ohm

6 A

DUAL

S-PDSO-N6

DRAIN

e4

260

DMC1029UFDB-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.2 W

PLASTIC/EPOXY

SWITCHING

12 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.029 ohm

5.6 A

DUAL

S-PDSO-N6

DRAIN

e4

260

119 pF

DMN2041UFDB-13

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

NICKEL PALLADIUM GOLD

.04 ohm

4.7 A

DUAL

S-PDSO-N6

1

DRAIN

e4

260

DMN3035LWN-13

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

NICKEL PALLADIUM GOLD

.035 ohm

5.5 A

DUAL

R-PDSO-N6

DRAIN

e4

260

DMP2021UFDF-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

NICKEL PALLADIUM GOLD

.016 ohm

9 A

DUAL

S-PDSO-N6

1

DRAIN

HIGH RELIABILITY

e4

30

260

AEC-Q101

DMP2060UFDB-13

Diodes Incorporated

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

NICKEL PALLADIUM GOLD

.09 ohm

3.2 A

DUAL

S-PDSO-N6

DRAIN

e4

260

DMC2041UFDB-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.04 ohm

4.7 A

DUAL

S-PDSO-N6

DRAIN

e4

260

DMN10H170SFDE-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.03 W

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.2 ohm

2.9 A

DUAL

S-PDSO-N6

DRAIN

e4

260

25 pF

DMN32D4SDW-13

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.35 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

1 ohm

.65 A

DUAL

R-PDSO-G6

1

e3

30

260

6.8 pF

DMG3404L-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.025 ohm

4.2 A

DUAL

R-PDSO-G3

1

e3

30

260

DMN1029UFDB-13

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

12 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.029 ohm

5.6 A

DUAL

S-PDSO-N6

DRAIN

e4

260

119 pF

CPH3351-TL-W

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.25 ohm

1.8 A

DUAL

R-PDSO-G3

1

TO-236

e6

30

260

DMC25D0UVT-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

COMPLEX

YES

1.2 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

4 ohm

3.2 A

DUAL

R-PDSO-G6

HIGH RELIABILITY

e3

260

47 pF

DMP3018SFK-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

NICKEL PALLADIUM GOLD

.0145 ohm

10.2 A

DUAL

R-PDSO-N4

DRAIN

HIGH RELIABILITY

e4

260

686 pF

AEC-Q101

MCH3375-TL-W

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN BISMUTH

.295 ohm

1.6 A

DUAL

R-PDSO-F3

1

e6

30

260

MCH3477-TL-W

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin/Bismuth (Sn/Bi)

.038 ohm

4.5 A

DUAL

R-PDSO-F3

1

e6

DMC25D1UVT-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

COMMON SUBSTRATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.3 W

PLASTIC/EPOXY

SWITCHING

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.055 ohm

3.9 A

DUAL

R-PDSO-G6

HIGH RELIABILITY

e3

260

3.3 pF

NVJS3151PT1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.625 W

PLASTIC/EPOXY

SWITCHING

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.06 ohm

2.7 A

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101

ZXMS6004SGQTA

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

MATTE TIN

.6 ohm

DUAL

R-PDSO-G4

1

SOURCE

HIGH RELIABILITY

e3

260

AEC-Q101

ZXMS6006DT8QTA

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

MATTE TIN

.125 ohm

DUAL

R-PDSO-G8

1

HIGH RELIABILITY

e3

260

AEC-Q101

CPH3356-TL-W

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN BISMUTH

.137 ohm

2.5 A

DUAL

R-PDSO-G3

1

TO-236

e6

30

260

MCH6663-TL-W

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.188 ohm

1.8 A

DUAL

R-PDSO-F6

1

e6

30

260

ZXMS6004DT8QTA

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.6 ohm

DUAL

R-PDSO-G8

1

HIGH RELIABILITY

e3

260

AEC-Q101

ZXMS6005SGQTA

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.25 ohm

DUAL

R-PDSO-G4

1

SOURCE

HIGH RELIABILITY

e3

260

AEC-Q101

ZXMS6006SGQTA

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.125 ohm

DUAL

R-PDSO-G4

1

SOURCE

HIGH RELIABILITY

e3

30

260

AEC-Q101

CSD13302WT

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

12 V

BALL

SQUARE

ENHANCEMENT MODE

1

29 A

4

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.0285 ohm

1.6 A

BOTTOM

S-PBGA-B4

1

ULTRA LOW RESISTANCE

e1

30

260

196 pF

CPH3360-TL-W

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin/Bismuth (Sn/Bi)

.303 ohm

1.6 A

DUAL

R-PDSO-G3

1

TO-236

e6

MCH3333A-TL-W

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.9 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.215 ohm

2 A

DUAL

R-PDSO-F3

1

e6

30

260

MCH3474-TL-W

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.05 ohm

4 A

DUAL

R-PDSO-F3

1

e6

30

260

MCH3481-TL-W

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.104 ohm

2 A

DUAL

R-PDSO-F3

1

e6

30

260

DMC6070LND-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

SQUARE

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.085 ohm

2.4 A

DUAL

S-PDSO-F8

e3

260

DMG1016VQ-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.53 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.4 ohm

.87 A

DUAL

R-PDSO-F6

1

e3

30

260

5.37 pF

AEC-Q101; IATF 16949; MIL-STD-202

DMN3027LFG-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.07 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0186 ohm

5.3 A

DUAL

S-PDSO-N5

DRAIN

HIGH RELIABILITY

e3

260

70 pF

AEC-Q101

DMN2026UVT-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.75 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.024 ohm

6.2 A

DUAL

R-PDSO-G6

e3

260

37 pF

DMN5L06DMKQ-7

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

3 ohm

.305 A

DUAL

R-PDSO-G6

HIGH RELIABILITY

e3

260

5 pF

AEC-Q101

DMN67D8L-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

MATTE TIN

5 ohm

.21 A

DUAL

R-PDSO-G3

HIGH RELIABILITY

e3

260

AEC-Q101

DMN61D8L-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

2.4 ohm

.47 A

DUAL

R-PDSO-G3

1

e3

260

NVC3S5A51PLZT1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.2 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN BISMUTH

.25 ohm

1.7 A

DUAL

R-PDSO-G3

1

e6

30

260

AEC-Q101

VEC2315-TL-W

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

AMPLIFIER

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.137 ohm

2.5 A

DUAL

R-PDSO-F8

1

e6

30

260

MCH3383-TL-W

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

12 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN BISMUTH

.069 ohm

3.5 A

DUAL

R-PDSO-F3

1

e6

30

260

NTNS3C94NZT5G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.12 W

PLASTIC/EPOXY

SWITCHING

12 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.48 ohm

.384 A

SINGLE

S-PBCC-N3

1

DRAIN

e4

30

260

CPH3348-TL-W

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.07 ohm

3 A

DUAL

R-PDSO-G3

1

TO-236

e6

30

260

NTLUS4C16NTBG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.53 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0114 ohm

6.1 A

DUAL

S-PDSO-N3

1

DRAIN

ULTRA LOW RESISTANCE

e3

30

260

VEC2616-TL-W

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.08 ohm

3 A

DUAL

R-PDSO-F8

1

e6

30

260

NTLUD4C26NTBG

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.7 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.021 ohm

4.8 A

DUAL

S-PDSO-N6

1

DRAIN

e3

30

260

TPCC8066-HLQS

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.019 ohm

11 A

DUAL

S-PDSO-F5

DRAIN

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.