| Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Nominal Transition Frequency (fT) | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Maximum Collector-Base Capacitance | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Feedback Capacitance (Crss) | Reference Standard |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Diodes Incorporated |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
1.8 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.022 ohm |
17 A |
DUAL |
S-PDSO-F6 |
1 |
DRAIN |
ESD PROTECTED |
e3 |
260 |
67 pF |
||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
1.8 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.022 ohm |
17 A |
DUAL |
S-PDSO-F6 |
1 |
DRAIN |
ESD PROTECTED |
e3 |
260 |
67 pF |
||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
25 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
-55 Cel |
MATTE TIN |
4 ohm |
.22 A |
DUAL |
R-PDSO-G6 |
1 |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.2 W |
PLASTIC/EPOXY |
SWITCHING |
12 V |
BALL |
SQUARE |
ENHANCEMENT MODE |
1 |
4 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN SILVER COPPER |
.042 ohm |
5.1 A |
BOTTOM |
S-PBGA-B4 |
1 |
e1 |
260 |
30 pF |
||||||||||||||||||||||
|
|
Diodes Incorporated |
P-CHANNEL |
COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
BALL |
SQUARE |
ENHANCEMENT MODE |
2 |
9 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
1.56 W |
150 Cel |
SILICON |
-55 Cel |
TIN SILVER COPPER |
.1 ohm |
3.2 A |
BOTTOM |
S-PBGA-B9 |
1 |
e1 |
260 |
12.6 pF |
||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
250 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.35 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN BISMUTH |
7.2 ohm |
.35 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236 |
e6 |
30 |
260 |
||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.43 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
4 ohm |
.43 A |
DUAL |
R-PDSO-G3 |
3 |
e3 |
30 |
260 |
7 pF |
|||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.43 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
4 ohm |
.43 A |
DUAL |
R-PDSO-G3 |
3 |
e3 |
30 |
260 |
7 pF |
|||||||||||||||||||||
|
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.5 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.03 ohm |
6 A |
DUAL |
R-PDSO-G6 |
1 |
e3 |
30 |
260 |
117 pF |
|||||||||||||||||||||
|
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.5 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.03 ohm |
6 A |
DUAL |
R-PDSO-G6 |
1 |
e3 |
30 |
260 |
117 pF |
|||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.15 W |
PLASTIC/EPOXY |
SWITCHING |
50 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
.15 W |
SILICON |
TIN BISMUTH |
7.5 ohm |
.1 A |
DUAL |
R-PDSO-F3 |
1 |
e6 |
260 |
||||||||||||||||||||||||
|
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
1.2 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.08 ohm |
3.7 A |
DUAL |
R-PDSO-G6 |
1 |
e3 |
30 |
260 |
87 pF |
|||||||||||||||||||||
|
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
1.2 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.08 ohm |
3.7 A |
DUAL |
R-PDSO-G6 |
1 |
e3 |
30 |
260 |
87 pF |
|||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
.075 ohm |
3.4 A |
DUAL |
S-PDSO-N3 |
1 |
DRAIN |
e4 |
30 |
260 |
26 pF |
||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
.075 ohm |
3.4 A |
DUAL |
S-PDSO-N3 |
1 |
DRAIN |
e4 |
30 |
260 |
26 pF |
||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
6 ohm |
.17 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
50 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
3.5 ohm |
.2 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
5 pF |
|||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
7.5 ohm |
.115 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236 |
e3 |
30 |
260 |
5 pF |
||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2.3 W |
UNSPECIFIED |
SWITCHING |
24 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
BOTTOM |
R-XBCC-N6 |
e4 |
102 pF |
||||||||||||||||||||||||||
|
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
1.4 W |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
.078 ohm |
3 A |
BOTTOM |
R-PBCC-N3 |
1 |
DRAIN |
e4 |
4.3 pF |
||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
2.5 ohm |
.26 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236 |
e3 |
10 |
260 |
AEC-Q101 |
|||||||||||||||||||||
|
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.36 W |
UNSPECIFIED |
SWITCHING |
12 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD/NICKEL GOLD |
.15 ohm |
3.6 A |
BOTTOM |
R-XBCC-N3 |
DRAIN |
ESD PROTECTED |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.89 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
4 ohm |
2.9 A |
DUAL |
S-PDSO-N6 |
1 |
HIGH RELIABILITY |
e3 |
260 |
101 pF |
AEC-Q101 |
||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2.6 W |
UNSPECIFIED |
SWITCHING |
12 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD/NICKEL GOLD |
.0059 ohm |
BOTTOM |
R-XBCC-N6 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.16 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.06 ohm |
3.6 A |
DUAL |
R-PDSO-G6 |
e3 |
260 |
26 pF |
|||||||||||||||||||||||
|
|
Diodes Incorporated |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
1.16 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.095 ohm |
2.8 A |
DUAL |
R-PDSO-G6 |
1 |
LOW CAPACITANCE |
e3 |
260 |
33 pF |
|||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
9.62 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
1.76 W |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
.0255 ohm |
6.8 A |
DUAL |
S-PDSO-N6 |
1 |
DRAIN |
e4 |
30 |
260 |
639 pF |
|||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
9.62 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
1.76 W |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
.0255 ohm |
6.8 A |
DUAL |
S-PDSO-N6 |
1 |
DRAIN |
e4 |
30 |
260 |
639 pF |
|||||||||||||||||||
|
|
Diodes Incorporated |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
.8 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.75 ohm |
.85 A |
DUAL |
R-PDSO-F6 |
LOW THRESHOLD, ESD PROTECTION, FAST SWITCHING |
e3 |
260 |
3.4 pF |
||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.43 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0024 ohm |
.35 A |
DUAL |
R-PDSO-F6 |
e3 |
260 |
8 pF |
|||||||||||||||||||||||
|
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
1.5 W |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.038 ohm |
5.6 A |
DUAL |
R-PDSO-G6 |
1 |
LOW CAPACITANCE |
e3 |
260 |
1.5 pF |
AEC-Q101 |
||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
115 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
1.6 W |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
.09 ohm |
3.4 A |
DUAL |
S-PDSO-N6 |
1 |
DRAIN |
e4 |
30 |
260 |
|||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.36 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Tin (Sn) |
10 ohm |
.17 A |
DUAL |
R-PDSO-G3 |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
.35 W |
150 Cel |
SILICON |
-55 Cel |
.45 ohm |
.68 A |
DUAL |
R-PDSO-G3 |
1 |
30 |
260 |
|||||||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
.35 W |
150 Cel |
SILICON |
-55 Cel |
1.1 ohm |
.46 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236 |
30 |
260 |
10 pF |
|||||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.36 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
5 ohm |
.18 A |
DUAL |
R-PDSO-G3 |
1 |
30 |
260 |
||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.3 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-65 Cel |
2 ohm |
.28 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236AB |
30 |
260 |
5 pF |
||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.3 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.3 ohm |
.7 A |
DUAL |
R-PDSO-G6 |
1 |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||||
|
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
1.53 W |
PLASTIC/EPOXY |
SWITCHING |
8 V |
BALL |
SQUARE |
ENHANCEMENT MODE |
1 |
9 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN SILVER COPPER |
.0091 ohm |
13.2 A |
BOTTOM |
S-PBGA-B9 |
e1 |
260 |
||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
28 W |
PLASTIC/EPOXY |
60 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0226 ohm |
24 A |
DUAL |
S-PDSO-F8 |
1 |
DRAIN |
e3 |
30 |
260 |
||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN BISMUTH |
.078 ohm |
3.5 A |
DUAL |
R-PDSO-G6 |
1 |
e6 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN BISMUTH |
.078 ohm |
3.5 A |
DUAL |
R-PDSO-G6 |
1 |
e6 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||||||||
|
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
25 V |
BALL |
SQUARE |
ENHANCEMENT MODE |
1 |
9 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
1.78 W |
150 Cel |
SILICON |
-55 Cel |
TIN SILVER COPPER |
.04 ohm |
5.4 A |
BOTTOM |
S-PBGA-B9 |
1 |
GATE PROTECTED |
30 |
260 |
30 pF |
|||||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.125 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
5.5 ohm |
.127 A |
DUAL |
R-PDSO-N3 |
DRAIN |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS |
YES |
1.16 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.06 ohm |
3.6 A |
DUAL |
R-PDSO-G6 |
1 |
e3 |
260 |
|||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.8 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.4 ohm |
1.1 A |
DUAL |
R-PDSO-F6 |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||
|
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.36 W |
UNSPECIFIED |
SWITCHING |
12 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD/NICKEL GOLD |
.15 ohm |
3.6 A |
BOTTOM |
R-XBCC-N3 |
DRAIN |
ESD PROTECTED |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.4 W |
UNSPECIFIED |
SWITCHING |
40 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
UNCASED CHIP |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.018 ohm |
10 A |
UPPER |
R-XUUC-N3 |
25 pF |
Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.
Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.
The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.