Small Signal Field Effect Transistors (FET)

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

DMS3012SFG-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.2 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

12 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.01 ohm

9.5 A

DUAL

S-PDSO-N5

1

DRAIN

HIGH RELIABILITY

e3

30

260

DMG3415U-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.9 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0425 ohm

4 A

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

DMN55D0UTQ-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.16 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

4 ohm

.16 A

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

TN0604N3-G-P005

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.74 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

.74 W

150 Cel

SILICON

-55 Cel

MATTE TIN

.75 ohm

.7 A

BOTTOM

O-PBCY-T3

HIGH INPUT IMPEDANCE

TO-92

e3

50 pF

TN0604N3-G-P013

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.74 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

.74 W

150 Cel

SILICON

-55 Cel

MATTE TIN

.75 ohm

.7 A

BOTTOM

O-PBCY-T3

HIGH INPUT IMPEDANCE

TO-92

e3

50 pF

TN0620N3-G-P014

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

1 W

150 Cel

SILICON

-55 Cel

MATTE TIN

6 ohm

.25 A

BOTTOM

O-PBCY-T3

TO-92

e3

35 pF

VP0550N3-G-P013

Microchip Technology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

125 ohm

.054 A

BOTTOM

O-PBCY-T3

TO-92

10 pF

BSS8402DWQ-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

7.5 ohm

.115 A

DUAL

R-PDSO-G6

1

HIGH RELIABILITY

e3

30

260

5 pF

AEC-Q101

BSS84DWQ-7

Diodes Incorporated

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.13 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

10 ohm

.13 A

DUAL

R-PDSO-G6

1

HIGH RELIABILITY

e3

30

260

12 pF

AEC-Q101

DMB53D0UV-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE

YES

.25 W

.1 A

PLASTIC/EPOXY

SWITCHING

.3 V

50 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

200

150 Cel

SILICON

MATTE TIN

4 ohm

.16 A

DUAL

R-PDSO-F6

1

HIGH RELIABILITY

e3

260

AEC-Q101

DMN5L06VK-13

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

50 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.28 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

3 ohm

.28 A

DUAL

R-PDSO-F6

1

HIGH RELIABILITY

e3

30

260

5 pF

AEC-Q101

DMP2004KQ-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.55 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.6 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.9 ohm

.6 A

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

30

260

20 pF

AEC-Q101

NTLUS3A18PZTAG

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.8 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

8.2 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.018 ohm

5.1 A

DUAL

S-PDSO-N6

1

DRAIN

ULTRA LOW RESISTANCE

e3

30

260

NTLUS3A18PZTBG

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.8 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

8.2 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.018 ohm

5.1 A

DUAL

S-PDSO-N6

1

DRAIN

ULTRA LOW RESISTANCE

e3

30

260

DMN2500UFB4-7B

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.95 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

1 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.4 ohm

.81 A

BOTTOM

R-PBCC-N3

1

DRAIN

HIGH RELIABILITY

e4

30

260

AEC-Q101

DMN2500UFB4-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.95 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

1 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.4 ohm

.81 A

BOTTOM

R-PBCC-N3

1

DRAIN

HIGH RELIABILITY

e4

30

260

AEC-Q101

DMP2100UCB9-7

Diodes Incorporated

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

BALL

SQUARE

ENHANCEMENT MODE

2

4 A

9

GRID ARRAY

Other Transistors

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN SILVER COPPER

.0175 ohm

3 A

BOTTOM

S-PBGA-B9

1

HIGH RELIABILITY

e1

30

260

55 pF

AEC-Q101

DMS3014SFG-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.1 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

9.5 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.014 ohm

9 A

DUAL

R-PDSO-N5

1

DRAIN

HIGH RELIABILITY

e3

30

260

AEC-Q101

SMMBF4391LT1G

Onsemi

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

-55 Cel

TIN

30 ohm

DUAL

R-PDSO-G3

1

TO-236

e3

260

3.5 pF

AEC-Q101

SI4090DY-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Pure Matte Tin (Sn) - annealed

.01 ohm

19.7 A

DUAL

R-PDSO-G8

1

MS-012AA

30

260

DMP2540UCB9-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

25 V

BALL

SQUARE

ENHANCEMENT MODE

1

9

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN SILVER COPPER

.06 ohm

4 A

BOTTOM

S-PBGA-B9

1

HIGH RELIABILITY

e1

30

260

90 pF

AEC-Q101

FK3503010L

Panasonic

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.15 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

6 ohm

.1 A

DUAL

R-PDSO-F3

NOT SPECIFIED

NOT SPECIFIED

MTM78E2B0LBF

Panasonic

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

.7 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

4 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.025 ohm

4 A

DUAL

R-PDSO-F8

NOT SPECIFIED

NOT SPECIFIED

NVF2201NT1G

Onsemi

N-CHANNEL

SINGLE

YES

.15 W

1

.3 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.3 A

1

e3

30

260

TPC8111(TE12L,Q,M)

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.018 ohm

11 A

DUAL

R-PDSO-G8

NTTFS4C05NTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

33 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

75 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.0051 ohm

12 A

DUAL

S-PDSO-F5

1

DRAIN

e3

NOT SPECIFIED

NOT SPECIFIED

NTMFS4C06NT3G

Onsemi

N-CHANNEL

SINGLE

YES

30.5 W

1

69 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

69 A

1

e3

30

260

NTTFS3A08PZTAG

Onsemi

P-CHANNEL

SINGLE

YES

4.9 W

1

22 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

22 A

1

e3

30

260

DMN3030LFG-13

Diodes Incorporated

N-CHANNEL

SINGLE

YES

2.3 W

1

8.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

8.6 A

1

e3

30

260

DMN3030LFG-7

Diodes Incorporated

N-CHANNEL

SINGLE

YES

2.3 W

1

8.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

8.6 A

1

e3

30

260

FC6946010R

Panasonic

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.125 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.1 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

15 ohm

.1 A

DUAL

R-PDSO-F6

NOT SPECIFIED

NOT SPECIFIED

FJ3303010L

Panasonic

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

6 ohm

.1 A

DUAL

R-PDSO-F3

1

MTM763200LBF

Panasonic

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN BISMUTH

.105 ohm

1.9 A

DUAL

R-PDSO-F6

1

e6

NVGS3443T1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4.4 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.065 ohm

2.2 A

DUAL

R-PDSO-G6

1

ULTRA LOW RESISTANCE

e3

30

260

AEC-Q101

NVMD6P02R2G

Onsemi

P-CHANNEL

YES

2 W

7.8 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

7.8 A

1

e3

30

260

NTNS3A65PZT5G

Onsemi

P-CHANNEL

SINGLE

YES

.218 W

1

.281 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

NICKEL PALLADIUM GOLD

.281 A

1

e4

30

260

NTTFS4C25NTWG

Onsemi

N-CHANNEL

SINGLE

YES

20.2 W

1

27 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

27 A

1

e3

30

260

NTLUD3A50PZTAG

Onsemi

P-CHANNEL

YES

2.2 W

4.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

4.4 A

1

e3

30

260

NTLUD3A50PZTBG

Onsemi

P-CHANNEL

YES

2.2 W

4.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

4.4 A

1

e3

30

260

NTZD3154NT1H

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.54 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.55 ohm

.54 A

DUAL

R-PDSO-F6

1

e3

30

260

20 pF

NTZD3155CT1H

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.54 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.55 ohm

.54 A

DUAL

R-PDSO-F6

1

e3

30

260

20 pF

NTZS3151PT1H

Onsemi

P-CHANNEL

SINGLE

YES

.21 W

1

.86 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.86 A

1

e3

30

260

DMP2225LQ-7

Diodes Incorporated

P-CHANNEL

SINGLE

YES

1.08 W

1

2.6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

2.6 A

1

e3

30

260

2N7002DWA-7

Diodes Incorporated

N-CHANNEL

YES

.4 W

.2 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

.2 A

1

e3

30

260

DMC6070LFDH-7

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

3.1 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.085 ohm

3.1 A

DUAL

S-PDSO-N8

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

FK3303010L

Panasonic

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN BISMUTH

6 ohm

.1 A

DUAL

R-PDSO-F3

1

e6

NTLUS3A18PZCTAG

Onsemi

P-CHANNEL

SINGLE

YES

3.8 W

1

8.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

8.2 A

1

e3

30

260

NTLUS3A18PZCTBG

Onsemi

P-CHANNEL

SINGLE

YES

3.8 W

1

8.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

8.2 A

1

e3

30

260

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.