| Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Nominal Transition Frequency (fT) | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Maximum Collector-Base Capacitance | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Feedback Capacitance (Crss) | Reference Standard |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
12 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.01 ohm |
9.5 A |
DUAL |
S-PDSO-N5 |
1 |
DRAIN |
HIGH RELIABILITY |
e3 |
30 |
260 |
|||||||||||||||||||
|
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.9 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.0425 ohm |
4 A |
DUAL |
R-PDSO-G3 |
1 |
HIGH RELIABILITY |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.2 W |
PLASTIC/EPOXY |
50 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.16 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
4 ohm |
.16 A |
DUAL |
R-PDSO-G3 |
1 |
HIGH RELIABILITY |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||||
|
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.74 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
.74 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.75 ohm |
.7 A |
BOTTOM |
O-PBCY-T3 |
HIGH INPUT IMPEDANCE |
TO-92 |
e3 |
50 pF |
|||||||||||||||||||||
|
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.74 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
.74 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.75 ohm |
.7 A |
BOTTOM |
O-PBCY-T3 |
HIGH INPUT IMPEDANCE |
TO-92 |
e3 |
50 pF |
|||||||||||||||||||||
|
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
1 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
6 ohm |
.25 A |
BOTTOM |
O-PBCY-T3 |
TO-92 |
e3 |
35 pF |
||||||||||||||||||||||
|
|
Microchip Technology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
125 ohm |
.054 A |
BOTTOM |
O-PBCY-T3 |
TO-92 |
10 pF |
||||||||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
7.5 ohm |
.115 A |
DUAL |
R-PDSO-G6 |
1 |
HIGH RELIABILITY |
e3 |
30 |
260 |
5 pF |
AEC-Q101 |
||||||||||||||||||||||
|
|
Diodes Incorporated |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.3 W |
PLASTIC/EPOXY |
SWITCHING |
50 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
.13 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
10 ohm |
.13 A |
DUAL |
R-PDSO-G6 |
1 |
HIGH RELIABILITY |
e3 |
30 |
260 |
12 pF |
AEC-Q101 |
||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE |
YES |
.25 W |
.1 A |
PLASTIC/EPOXY |
SWITCHING |
.3 V |
50 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
200 |
150 Cel |
SILICON |
MATTE TIN |
4 ohm |
.16 A |
DUAL |
R-PDSO-F6 |
1 |
HIGH RELIABILITY |
e3 |
260 |
AEC-Q101 |
||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.25 W |
PLASTIC/EPOXY |
SWITCHING |
50 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
.28 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
3 ohm |
.28 A |
DUAL |
R-PDSO-F6 |
1 |
HIGH RELIABILITY |
e3 |
30 |
260 |
5 pF |
AEC-Q101 |
|||||||||||||||||
|
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.55 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.6 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.9 ohm |
.6 A |
DUAL |
R-PDSO-G3 |
1 |
HIGH RELIABILITY |
e3 |
30 |
260 |
20 pF |
AEC-Q101 |
||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.8 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
8.2 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.018 ohm |
5.1 A |
DUAL |
S-PDSO-N6 |
1 |
DRAIN |
ULTRA LOW RESISTANCE |
e3 |
30 |
260 |
|||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.8 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
8.2 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.018 ohm |
5.1 A |
DUAL |
S-PDSO-N6 |
1 |
DRAIN |
ULTRA LOW RESISTANCE |
e3 |
30 |
260 |
|||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.95 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1 A |
3 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL PALLADIUM GOLD |
.4 ohm |
.81 A |
BOTTOM |
R-PBCC-N3 |
1 |
DRAIN |
HIGH RELIABILITY |
e4 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.95 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1 A |
3 |
CHIP CARRIER |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL PALLADIUM GOLD |
.4 ohm |
.81 A |
BOTTOM |
R-PBCC-N3 |
1 |
DRAIN |
HIGH RELIABILITY |
e4 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||
|
|
Diodes Incorporated |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
BALL |
SQUARE |
ENHANCEMENT MODE |
2 |
4 A |
9 |
GRID ARRAY |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN SILVER COPPER |
.0175 ohm |
3 A |
BOTTOM |
S-PBGA-B9 |
1 |
HIGH RELIABILITY |
e1 |
30 |
260 |
55 pF |
AEC-Q101 |
||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
9.5 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.014 ohm |
9 A |
DUAL |
R-PDSO-N5 |
1 |
DRAIN |
HIGH RELIABILITY |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
.225 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
-55 Cel |
TIN |
30 ohm |
DUAL |
R-PDSO-G3 |
1 |
TO-236 |
e3 |
260 |
3.5 pF |
AEC-Q101 |
||||||||||||||||||||
|
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
Pure Matte Tin (Sn) - annealed |
.01 ohm |
19.7 A |
DUAL |
R-PDSO-G8 |
1 |
MS-012AA |
30 |
260 |
|||||||||||||||||||||||||
|
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
25 V |
BALL |
SQUARE |
ENHANCEMENT MODE |
1 |
9 |
GRID ARRAY |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN SILVER COPPER |
.06 ohm |
4 A |
BOTTOM |
S-PBGA-B9 |
1 |
HIGH RELIABILITY |
e1 |
30 |
260 |
90 pF |
AEC-Q101 |
||||||||||||||||||||||
|
|
Panasonic |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.15 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.1 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
6 ohm |
.1 A |
DUAL |
R-PDSO-F3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
|
|
Panasonic |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
YES |
.7 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
4 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.025 ohm |
4 A |
DUAL |
R-PDSO-F8 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
.15 W |
1 |
.3 A |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
TIN |
.3 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
Toshiba |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.018 ohm |
11 A |
DUAL |
R-PDSO-G8 |
|||||||||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
33 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
75 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.0051 ohm |
12 A |
DUAL |
S-PDSO-F5 |
1 |
DRAIN |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
30.5 W |
1 |
69 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
MATTE TIN |
69 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE |
YES |
4.9 W |
1 |
22 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
MATTE TIN |
22 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE |
YES |
2.3 W |
1 |
8.6 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
MATTE TIN |
8.6 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
SINGLE |
YES |
2.3 W |
1 |
8.6 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
MATTE TIN |
8.6 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
|
Panasonic |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.125 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
.1 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
15 ohm |
.1 A |
DUAL |
R-PDSO-F6 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
|
|
Panasonic |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
6 ohm |
.1 A |
DUAL |
R-PDSO-F3 |
1 |
|||||||||||||||||||||||||||||
|
|
Panasonic |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN BISMUTH |
.105 ohm |
1.9 A |
DUAL |
R-PDSO-F6 |
1 |
e6 |
|||||||||||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4.4 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.065 ohm |
2.2 A |
DUAL |
R-PDSO-G6 |
1 |
ULTRA LOW RESISTANCE |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
YES |
2 W |
7.8 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
MATTE TIN |
7.8 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE |
YES |
.218 W |
1 |
.281 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
NICKEL PALLADIUM GOLD |
.281 A |
1 |
e4 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
20.2 W |
1 |
27 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
MATTE TIN |
27 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
YES |
2.2 W |
4.4 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
MATTE TIN |
4.4 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
YES |
2.2 W |
4.4 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
MATTE TIN |
4.4 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.25 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
.54 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.55 ohm |
.54 A |
DUAL |
R-PDSO-F6 |
1 |
e3 |
30 |
260 |
20 pF |
||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.25 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
.54 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.55 ohm |
.54 A |
DUAL |
R-PDSO-F6 |
1 |
e3 |
30 |
260 |
20 pF |
||||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE |
YES |
.21 W |
1 |
.86 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
TIN |
.86 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
|
Diodes Incorporated |
P-CHANNEL |
SINGLE |
YES |
1.08 W |
1 |
2.6 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
MATTE TIN |
2.6 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL |
YES |
.4 W |
.2 A |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
MATTE TIN |
.2 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||||
|
|
Diodes Incorporated |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.4 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
2 |
3.1 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.085 ohm |
3.1 A |
DUAL |
S-PDSO-N8 |
1 |
HIGH RELIABILITY |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||
|
|
Panasonic |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN BISMUTH |
6 ohm |
.1 A |
DUAL |
R-PDSO-F3 |
1 |
e6 |
|||||||||||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE |
YES |
3.8 W |
1 |
8.2 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
TIN |
8.2 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
|
Onsemi |
P-CHANNEL |
SINGLE |
YES |
3.8 W |
1 |
8.2 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
TIN |
8.2 A |
1 |
e3 |
30 |
260 |
Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.
Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.
The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.