Small Signal Field Effect Transistors (FET)

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

DMN53D0U-13

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

Matte Tin (Sn)

3 ohm

.3 A

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

STN3PF06

STMicroelectronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.5 A

4

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.22 ohm

2.5 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

AVALANCHE ENERGY RATED

e3

30

260

NDDP010N25AZ-1H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

52 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.42 ohm

10 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

e6

NDDP010N25AZT4H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

52 W

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.42 ohm

10 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e6

30

260

PCP1302-TD-H

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.5 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.266 ohm

3 A

SINGLE

R-PSSO-F3

1

DRAIN

TO-243AA

e6

30

260

SFT1452-W

Onsemi

N-CHANNEL

SINGLE

NO

26 W

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

3 A

e6

DMP57D5UV-7

Diodes Incorporated

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

50 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.16 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

6 ohm

.16 A

DUAL

R-PDSO-F6

1

Not Qualified

HIGH RELIABILITY

e3

30

260

NTGS1135PT1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.6 W

PLASTIC/EPOXY

SWITCHING

8 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4.6 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.031 ohm

4.6 A

DUAL

R-PDSO-G6

1

Not Qualified

ULTRA LOW RESISTANCE

e3

NOT SPECIFIED

NOT SPECIFIED

NTUD3171PZT5G

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

.2 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.2 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

5 ohm

.2 A

DUAL

R-PDSO-F6

1

Not Qualified

e3

30

260

NTZD3156CT1G

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

.28 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.54 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.55 ohm

.54 A

DUAL

R-PDSO-F6

1

Not Qualified

e3

30

260

NTZD3156CT2G

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

.28 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.54 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.55 ohm

.54 A

DUAL

R-PDSO-F6

1

Not Qualified

e3

30

260

NTZD3156CT5G

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

.28 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.54 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.55 ohm

.54 A

DUAL

R-PDSO-F6

1

Not Qualified

e3

30

260

2N7002-E3

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

.2 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.115 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

7.5 ohm

.115 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

5 pF

DMN26D0UFB4-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.35 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

.23 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

3 ohm

.24 A

BOTTOM

R-PBCC-N3

1

DRAIN

Not Qualified

ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD

e4

30

260

AEC-Q101

NTJD4001NT2G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

.272 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.25 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

2.5 ohm

.25 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

12 pF

STP60NH2LL

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

60 W

PLASTIC/EPOXY

SWITCHING

24 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0135 ohm

40 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOW THRESHOLD

TO-220AB

40

245

BSO200N03

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6.6 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.02 ohm

6.6 A

DUAL

R-PDSO-G8

3

Not Qualified

AVALANCHE RATED

MS-012

e3

260

56 pF

NTK3142PT5G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

4 ohm

.215 A

DUAL

R-PDSO-F3

1

Not Qualified

e3

30

260

NTGD3133PT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.3 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

2.5 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.145 ohm

1.6 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

40

260

DMN5L06DMK-7

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.305 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

3 ohm

.305 A

DUAL

R-PDSO-G6

1

Not Qualified

HIGH RELIABILITY

e3

30

260

5 pF

DMN5L06DWK-7

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.305 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

3 ohm

.305 A

DUAL

R-PDSO-G6

1

Not Qualified

HIGH RELIABILITY

e3

30

260

5 pF

DMN5L06WK-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.3 A

3

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

3 ohm

.3 A

DUAL

R-PDSO-G3

1

Not Qualified

HIGH RELIABILITY, FAST SWITCHING

e3

30

260

5 pF

AEC-Q101

DMN2112SN-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.2 A

3

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

.5 W

150 Cel

SILICON

-55 Cel

MATTE TIN

.1 ohm

1.2 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

45 pF

MIL-STD-202

DMN2114SN-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

.5 W

150 Cel

SILICON

-55 Cel

MATTE TIN

.16 ohm

1.2 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

45 pF

MIL-STD-202

NMSD200B01-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

.2 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

2 ohm

.2 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

5 pF

DMN5L06K-7

Diodes Incorporated

N-CHANNEL

SINGLE

YES

.35 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.3 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-65 Cel

MATTE TIN

3 ohm

.3 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

5 pF

MIL-STD-202

LMN200B01-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND RESISTOR

YES

.3 W

.2 A

PLASTIC/EPOXY

SWITCHING

.3 V

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

60

150 Cel

SILICON

MATTE TIN

2 ohm

.115 A

DUAL

R-PDSO-G6

1

Not Qualified

BUILT IN BIAS RESISTOR

e3

30

260

5 pF

LMN400B01-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND RESISTOR

YES

.3 W

.4 A

PLASTIC/EPOXY

SWITCHING

.3 V

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

70

150 Cel

SILICON

MATTE TIN

2 ohm

.115 A

DUAL

R-PDSO-G6

1

Not Qualified

BUILT IN BIAS RESISTOR

e3

30

260

5 pF

NTMS4935NR2G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.0051 ohm

10 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

40

260

BSS209PWL6327

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.52 W

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.58 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.55 ohm

.58 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

e3

260

BSV236SPL6327

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.56 W

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.5 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.175 ohm

1.5 A

DUAL

R-PDSO-G6

1

Not Qualified

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

e3

260

BSD223PL6327

Infineon Technologies

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.25 W

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.39 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.2 ohm

.39 A

DUAL

R-PDSO-G6

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

260

22 pF

BSS223PWL6327

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.25 W

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.39 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.2 ohm

.39 A

DUAL

R-PDSO-G3

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

260

22 pF

NTTFS4932NTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

43 W

UNSPECIFIED

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

79 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.0055 ohm

11 A

DUAL

S-XDSO-N5

1

DRAIN

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

NTTFS4937NTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

43.1 W

UNSPECIFIED

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

75 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.007 ohm

11 A

DUAL

S-XDSO-N5

1

DRAIN

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

NTTFS4937NTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

43.1 W

UNSPECIFIED

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

75 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.007 ohm

11 A

DUAL

S-XDSO-N5

1

DRAIN

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

NTTFS4939NTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

29.8 W

UNSPECIFIED

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

52 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.008 ohm

8.9 A

DUAL

S-XDSO-N5

1

DRAIN

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

NTTFS4943NTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin (Sn)

.011 ohm

8 A

DUAL

S-XDSO-N5

1

DRAIN

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

NTTFS4945NTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin (Sn)

.013 ohm

7.1 A

DUAL

S-XDSO-N5

1

DRAIN

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

SSM3K121TU

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3.2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.14 ohm

3.2 A

DUAL

R-PDSO-F3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2N4392-E3

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

1.8 W

METAL

SWITCHING

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

-55 Cel

Matte Tin (Sn)

60 ohm

BOTTOM

O-MBCY-W3

1

GATE

Not Qualified

LOW INSERTION LOSS

TO-206AA

e3

30

260

3.5 pF

NTUD3127CT5G

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL GOLD PALLADIUM

3 ohm

.16 A

DUAL

R-PDSO-F6

1

Not Qualified

30

260

2.2 pF

NTUD3128NT5G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.16 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL GOLD PALLADIUM

3 ohm

.16 A

DUAL

R-PDSO-F6

1

Not Qualified

30

260

NTHD4102PT3G

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

20 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.08 ohm

2.9 A

DUAL

R-XDSO-C8

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

30

260

NTJD4158CT2G

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

.27 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

2.5 ohm

.25 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

12 pF

DMN32D2LV-7

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.4 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.2 ohm

.4 A

DUAL

R-PDSO-F6

1

Not Qualified

e3

30

260

2N5457_D74Z

Fairchild Semiconductor

N-CHANNEL

SINGLE

NO

.31 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

MATTE TIN

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

3 pF

FDC6000NZ_F077

Fairchild Semiconductor

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

7.3 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Nickel/Palladium/Gold (Ni/Pd/Au)

.02 ohm

7.3 A

DUAL

R-PDSO-F6

Not Qualified

e4

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.