NXP Semiconductors - 935439205515

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935439205515 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 935439205515
Description RF Power Field-Effect Transistors;
Datasheet 935439205515 Datasheet
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PD57070S by STMicroelectronics

PD57070S

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PD57070S by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact device ensures efficient performance in demanding environments.
MRF101AN by NXP Semiconductors

MRF101AN

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RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
SD56120M by STMicroelectronics

SD56120M

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SD56120M by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 14 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor excels in high-power environments with a max dissipation of 236 W.
BLF246 by Asi Semiconductor

BLF246

Asi Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; Transistor Element Material: SILICON; Qualification: Not Qualified;
BLP10H610Z by Ampleon Netherlands B V

BLP10H610Z

Ampleon Netherlands B V

BLP10H610Z by Ampleon Netherlands B V is an N-CHANNEL RF Power FET with a PLASTIC/EPOXY package. It operates in ENHANCEMENT MODE, suitable for AMPLIFIER applications in L BAND frequencies. With 104V DS Breakdown Voltage and max temp of 150°C, it features a COMMON SOURCE configuration and METAL-OXIDE SEMICONDUCTOR technology.
D1020UK by Tt Electronics Plc

D1020UK

Tt Electronics Plc

D1020UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with 70V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, featuring a max ID of 25A and a 200°C operating temperature. Commonly used as an amplifier, it has a metal-oxide semiconductor technology and gold terminal finish for high-performance applications.
934064592112 by NXP Semiconductors

934064592112

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Terminal Position: DUAL; No. of Elements: 1;
AFV10700HSR5 by NXP Semiconductors

AFV10700HSR5

NXP Semiconductors

AFV10700HSR5 by NXP Semiconductors is an N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 105V and a Min Power Gain of 18dB. Commonly used in amplifiers, it operates in the L BAND frequency range. This CERAMIC, METAL-SEALED COFIRED transistor has a max operating temperature of 225°C and can handle peak reflow temperatures up to 260°C.
A5G26H110NT4 by NXP Semiconductors

A5G26H110NT4

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RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260;
CGHV40100F by Wolfspeed

CGHV40100F

Wolfspeed

Wolfspeed's CGHV40100F is an N-CHANNEL RF FET with 150V DS breakdown voltage. Ideal for S BAND applications, it features GaN technology, 8.7A max drain current, and DEPLETION MODE operation in a FLANGE MOUNT package.
A2T18S162W31GSR3 by NXP Semiconductors

A2T18S162W31GSR3

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RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
PD85006L-E by STMicroelectronics

PD85006L-E

STMicroelectronics

PD85006L-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 2 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount device ensures efficient performance in compact designs.
DE375-501N21A by IXYS Corporation

DE375-501N21A

IXYS Corporation

DE375-501N21A by IXYS Corp is a plastic/epoxy N-channel RF Power FET with 500V DS breakdown voltage. It operates in the very high-frequency band and has a max drain current of 25A. Ideal for switching applications.
AFT09MS015NT1 by Freescale Semiconductor

AFT09MS015NT1

Freescale Semiconductor

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Terminal Finish: MATTE TIN; JESD-609 Code: e3;
D2002UK by Tt Electronics Plc

D2002UK

Tt Electronics Plc

D2002UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, ideal for AMPLIFIER applications. This METAL-OXIDE SEMICONDUCTOR FET has a max ID of 2A and can withstand temperatures up to 200°C.
MRF184 by Motorola

MRF184

Motorola

MRF184 by Motorola is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 11.5 dB Power Gain, suitable for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features a CERAMIC, METAL-SEALED COFIRED package and can handle up to 7A Drain Current with a max power dissipation of 118W at 200°C.
TIM0910-15L by Toshiba

TIM0910-15L

Toshiba

The Toshiba TIM0910-15L is an N-channel RF Power FET with a 15V DS breakdown voltage, ideal for amplifier applications in X band. Featuring a ceramic-metal sealed co-fired package, it operates in depletion mode with 11.5A max drain current and 60W power dissipation at 175°C ambient temperature.
A2T18S260-12SR3 by NXP Semiconductors

A2T18S260-12SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
MRF6S20010GNR1 by NXP Semiconductors

MRF6S20010GNR1

NXP Semiconductors

NXP's MRF6S20010GNR1 is a single N-channel RF FET with 68V DS breakdown voltage, ideal for amplifier applications in S band frequencies. It features a plastic/epoxy package, Gull Wing terminals, and operates in enhancement mode up to 225°C.
STAP1011-180 by STMicroelectronics

STAP1011-180

STMicroelectronics

STAP1011-180 by STMicroelectronics is an N-channel RF power FET designed for high-frequency applications in the L band. It features a max power dissipation of 800 W, a breakdown voltage of 65 V, and operates at temperatures up to 165 °C. Ideal for enhancing performance in various electronic devices.