NXP Semiconductors - A5G07H800W19NR3

  1. Home
  2. NXP Semiconductors - A5G07H800W19NR3
A5G07H800W19NR3 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number A5G07H800W19NR3
Description RF Power Field-Effect Transistors;
Datasheet A5G07H800W19NR3 Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

AFT05MS031NR1 by NXP Semiconductors

AFT05MS031NR1

NXP Semiconductors

NXP Semiconductors' AFT05MS031NR1 is an N-CHANNEL RF Power FET with 294W power dissipation, suitable for surface mount applications. Featuring METAL-OXIDE SEMICONDUCTOR technology, it operates up to 150°C and can withstand peak reflow temperature of 260°C. Ideal for high-power RF amplification in various electronic devices.
A2T26H300-24SR6 by Freescale Semiconductor

A2T26H300-24SR6

Freescale Semiconductor

RF Power Field-Effect Transistors;
934056468112 by NXP Semiconductors

934056468112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): 245; Highest Frequency Band: L BAND; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
LET9045C by STMicroelectronics

LET9045C

STMicroelectronics

LET9045C by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 9 A, breakdown voltage of 80 V, and operates in the ultra-high frequency band. Its robust design supports high power dissipation up to 108 W.
A3G23H500W17SR3 by NXP Semiconductors

A3G23H500W17SR3

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; JESD-30 Code: R-CQFP-F6; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Shape: RECTANGULAR;
GS66516B-MR by Gan Systems

GS66516B-MR

Gan Systems

GS66516B-MR by Gan Systems is a P-CHANNEL FET for SWITCHING applications. With 650V DS Breakdown Voltage, it operates in ENHANCEMENT MODE at 60A ID. This RF transistor in CHIP CARRIER package offers VERY HIGH FREQUENCY performance.
SD2942W by STMicroelectronics

SD2942W

STMicroelectronics

SD2942W by STMicroelectronics is a N-CHANNEL RF Power FET with 40A ID and 500W power dissipation. It operates at max temp of 200°C, suitable for high-power RF applications in various industries.
TRF7003PK by Texas Instruments

TRF7003PK

Texas Instruments

TRF7003PK by Texas Instruments is a single N-channel RF Power FET for amplifier applications. It operates in enhancement mode with a max drain current of 2A and breakdown voltage of 15V. Ideal for ultra-high frequency bands, it features a small outline package and can withstand temperatures up to 85°C.
CGHV14500F by Wolfspeed

CGHV14500F

Wolfspeed

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
MRF1518NT1 by NXP Semiconductors

MRF1518NT1

NXP Semiconductors

NXP Semiconductors' MRF1518NT1 is a single N-channel RF Power FET for amplifier applications. It operates in enhancement mode with 40V DS breakdown voltage and 4A drain current. With a max power dissipation of 62.5W, it is designed for ultra-high frequency band usage.
BLF6G15LS-40RN by NXP Semiconductors

BLF6G15LS-40RN

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Moisture Sensitivity Level (MSL): NOT APPLICABLE;
BLF6G27S-45,118 by Ampleon Netherlands B V

BLF6G27S-45,118

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Case Connection: SOURCE; Terminal Form: FLAT;
MRF8S9200NR3 by NXP Semiconductors

MRF8S9200NR3

NXP Semiconductors

NXP Semiconductors' MRF8S9200NR3 is an N-CHANNEL RF Power FET for ULTRA HIGH FREQUENCY BAND applications. It operates in ENHANCEMENT MODE with a 70V DS Breakdown Voltage and can handle up to 225°C temperature, making it suitable for AMPLIFIER circuits.
CG2H40010P by Wolfspeed

CG2H40010P

Wolfspeed

CG2H40010P by Wolfspeed is an N-CHANNEL RF Power FET with a 84V DS Breakdown Voltage and 15dB Power Gain, ideal for C Band applications. Operating in DEPLETION MODE, it features Gallium Nitride technology, can handle up to 1.5A Drain Current, and operates b/w -40°C to 150°C temperature range.
AFT05MS006NT1 by NXP Semiconductors

AFT05MS006NT1

NXP Semiconductors

RF Power Field-Effect Transistors; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3;
BLF177,112 by Ampleon Netherlands B V

BLF177,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Feedback Capacitance (Crss): 14 pF; No. of Terminals: 4; Operating Mode: ENHANCEMENT MODE;
PTVA101K02EVV1R250 by Infineon Technologies

PTVA101K02EVV1R250

Infineon Technologies

Infineon's PTVA101K02EVV1R250 is an N-CHANNEL RF Power FET with 105V DS Breakdown Voltage, 17dB Power Gain, and L BAND frequency. It's a COMMON SOURCE transistor for AMPLIFIER applications in ENHANCEMENT MODE. The package is CERAMIC/METAL-SEALED COFIRED, RECTANGULAR shape, FLANGE MOUNT style with 4 terminals and max temp of 225°C.
LET8180 by STMicroelectronics

LET8180

STMicroelectronics

LET8180 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 18 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its robust design supports high power dissipation up to 289 W.
TIM3742-25UL by Toshiba

TIM3742-25UL

Toshiba

Toshiba's TIM3742-25UL is an N-channel RF Power FET with a 15V DS breakdown voltage, ideal for amplifier applications in the C band. Featuring a max drain current of 20A and a power dissipation of 100W, this transistor operates in depletion mode at up to 175°C ambient temperature.
MRF171A by New Jersey Semiconductor Products

MRF171A

New Jersey Semiconductor Products

N-CHANNEL; Configuration: SINGLE; Highest Frequency Band: VERY HIGH FREQUENCY BAND; No. of Elements: 1; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE;