RECTANGULAR DRAM 1,707

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT48LC16M16A2FG-75IT:DTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		3.3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B54		3.6 V	1 mm		8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0					14 mm	5.4 ns
MT48LC16M16A2P-75IT:DTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	270 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e3	30	260	.002 Amp	1,2,4,8	22.22 mm	5.4 ns
MT48LC16M16A2TG-75IT:DTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	270 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	22.22 mm	5.4 ns
MT48LC16M16A2TG-7E:DTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		16MX16	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0					22.22 mm	5.4 ns
MT48LC16M8A2TG-75:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		16MX8	16M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e0					22.22 mm	5.4 ns
MT48LC2M32B2TG-6:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	86	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		2097152 words		YES		3.3		32	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	70 Cel		2MX32	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G86		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0	30	235			22.22 mm	5.5 ns
MT48LC4M16A2P-75IT:GTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		4194304 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		4MX16	4M	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	5.4 ns
MT48LC4M16A2TG-75:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		4194304 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0	30	235			22.22 mm	5.4 ns
MT48LC4M16A2TG-7E:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		4194304 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		4MX16	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0					22.22 mm	5.4 ns
MT48LC4M32B2F5-7IT:GTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		4194304 words		YES		3.3		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B90		3.6 V	1 mm		8 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e0					13 mm	5.5 ns
MT48LC4M32B2TG-7:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	86	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		4194304 words		YES		3.3		32	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel		4MX32	4M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G86		3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e0					22.22 mm	5.5 ns
MT48LC4M32B2TG-7IT:GTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	86	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		4194304 words		YES		3.3		32	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel		4MX32	4M	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G86		3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e0					22.22 mm	5.5 ns
MT48LC4M32LFF5-8IT:GTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words		YES		3.3		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX32	8M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B90		3.6 V	1 mm		8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e0					13 mm	7 ns
MT48LC8M16A2P-75IT:GTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		8388608 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		8MX16	8M	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	5.4 ns
MT48LC8M16A2TG-75:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		8388608 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		8MX16	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e0					22.22 mm	5.4 ns
MT48LC8M16A2TG-75IT:GTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		8388608 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		8MX16	8M	-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e0					22.22 mm	5.4 ns
MT48LC8M16A2TG-7E:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		8388608 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		8MX16	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e0					22.22 mm	5.4 ns
MT48LC8M8A2TG-75:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		8388608 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		8MX8	8M	0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e0					22.22 mm	5.4 ns
IS42S32800J-7BL	Integrated Silicon Solution	SYNCHRONOUS DRAM	COMMERCIAL	90	TFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	170 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA90,9X15,32		.8 mm	70 Cel	3-STATE	8MX32	8M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B90	3	3.6 V	1.2 mm	143 MHz	8 mm		268435456 bit	3 V	AUTO/SELF REFRESH	e1	10	260	.004 Amp	1,2,4,8	13 mm	5.4 ns
IS42S32800J-7TL	Integrated Silicon Solution	SYNCHRONOUS DRAM	COMMERCIAL	86	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	170 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3		32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20		.5 mm	70 Cel	3-STATE	8MX32	8M	0 Cel	Tin (Sn)	DUAL	1	R-PDSO-G86	3	3.6 V	1.2 mm	143 MHz	10.16 mm		268435456 bit	3 V	AUTO/SELF REFRESH	e3	10	260	.004 Amp	1,2,4,8	22.22 mm	5.4 ns
MT16HTF25664AZ-800M1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		256MX64	256M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V	30.5 mm		4 mm		17179869184 bit	1.7 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT18HTF25672AZ-80EM1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		256MX72	256M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V	30.5 mm		4 mm		19327352832 bit	1.7 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT18HTS25672RHZ-80EM1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel		ZIG-ZAG	1	R-XZMA-N200		1.9 V	30.15 mm		3.8 mm		19327352832 bit	1.7 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX						67.6 mm
MT36HTF51272PZ-80EM1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V	30.5 mm		4 mm		38654705664 bit	1.7 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT41K256M4DA-107:J	Micron Technology	DDR3L DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	162 mA	268435456 words	8	YES	COMMON	1.35	1.35	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm		3-STATE	256MX4	256M			BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm	933 MHz	8 mm	Not Qualified	1073741824 bit	1.283 V	AUTO/SELF REFRESH					8	10.5 mm	.195 ns
MT41K64M16JT-125:G	Micron Technology	DDR3L DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			64MX16	64M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		8 mm		1073741824 bit	1.283 V	AUTO/SELF REFRESH	e1					14 mm
MT41K64M16TW-125:J	Micron Technology	DDR3L DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			64MX16	64M			BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		8 mm		1073741824 bit	1.283 V	AUTO/SELF REFRESH						14 mm
MT8HTF12864AZ-800M1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		128MX64	128M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V	30.5 mm		2.7 mm		8589934592 bit	1.7 V	SELF REFRESH; WD-MAX						133.35 mm
MT8HTF12864HDZ-800M1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		64	MICROELECTRONIC ASSEMBLY				70 Cel		128MX64	128M	0 Cel		DUAL	1	R-XDMA-N200		1.9 V	30.15 mm		3.8 mm		8589934592 bit	1.7 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX						67.6 mm
MT9HTF12872AZ-80EM1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240			RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V	30.5 mm		2.7 mm		9663676416 bit	1.7 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT9HTF12872PZ-80EM1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		128MX72	128M	0 Cel		DUAL	1	R-XDMA-N240		1.9 V	30.5 mm		2.7 mm		9663676416 bit	1.7 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX		30	260			133.35 mm
MT9HTF12872RHZ-80EM1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		134217728 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		128MX72	128M	0 Cel		ZIG-ZAG	1	R-XZMA-N200		1.9 V	30.15 mm		3.8 mm		9663676416 bit	1.7 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX						67.6 mm
MT41K256M16HA-125AAT:E	Micron Technology	DDR3L DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			256MX16	256M			BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH						14 mm
MT41K256M16HA-125AIT:E	Micron Technology	DDR3L DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			256MX16	256M			BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH						14 mm
MT41K512M8RH-125AAT:E	Micron Technology	DDR3L DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			512MX8	512M			BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH						10.5 mm
MT41K512M8RH-125AIT:E	Micron Technology	DDR3L DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			512MX8	512M			BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH						10.5 mm
MT46H128M16LFDD-48WT:C	Micron Technology	LPDDR1 DRAM	OTHER	60	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	90 mA	134217728 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M	-25 Cel		BOTTOM	1	R-PBGA-B60		1.95 V	1 mm	208 MHz	8 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH		30	260	.00001 Amp	2,4,8,16	9 mm	4.8 ns
MT46H64M32LFCX-5IT:B	Micron Technology	DDR1 DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX32	64M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		9 mm		2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	5 ns
MT48LC16M8A2BB-6AAAT:L	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		16777216 words		YES		3.3		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	105 Cel		16MX8	16M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B60		3.6 V	1.2 mm		8 mm		134217728 bit	3 V	AUTO/SELF REFRESH	e1	30	260			16 mm	5.4 ns
MT48LC16M8A2BB-6AAIT:L	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		3.3		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX8	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		3.6 V	1.2 mm		8 mm		134217728 bit	3 V	AUTO/SELF REFRESH	e1	30	260			16 mm	5.4 ns
MT48LC16M8A2P-6AAIT:L	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		16MX8	16M	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		134217728 bit	3 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	5.4 ns
MT48LC8M16A2P-6AAIT:L	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	GULL WING	SYNCHRONOUS		8388608 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		8MX16	8M	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		134217728 bit	3 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	5.4 ns
MT18HVF25672PDZ-667H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V	4 mm		17.9 mm	Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH	e4					133.35 mm
MT46H16M32LFB5-6AT:C	Micron Technology	DDR1 DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	105 Cel		16MX32	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	5 ns
MT46H16M32LFB5-6IT:C	Micron Technology	DDR1 DRAM	INDUSTRIAL	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	105 mA	16777216 words	2,4,8,16	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	166 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	2,4,8,16	13 mm	5 ns
MT46H32M16LFBF-6AT:C	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	105 Cel		32MX16	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.95 V	1 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					9 mm	5 ns
MT46H32M16LFBF-6IT:C	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	110 mA	33554432 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.95 V	1 mm	166 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.00001 Amp	2,4,8,16	9 mm	5 ns
MT48H16M32LFB5-75IT:C	Micron Technology	DDR DRAM	INDUSTRIAL	90	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	95 mA	16777216 words	1,2,4,8	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	133 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.00001 Amp	1,2,4,8	13 mm	5.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.