RECTANGULAR DRAM 1,707

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length
MT53E256M32D2FW-046AAT:B	Micron Technology	LPDDR4 DRAM	200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	105 Cel	3-STATE	256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.1 mm	2133 MHz	10 mm	8589934592 bit	1.06 V						16,32	14.5 mm
AS4C256M16D3LC-12BANTR	Alliance Memory	DDR3L DRAM	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	228 mA	268435456 words	4,8	YES	COMMON	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	105 Cel	3-STATE	256MX16	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm	800 MHz	7.5 mm	4294967296 bit	1.283 V		e1	30	260	.0096 Amp	4,8	13.5 mm
AS4C512M16D3LB-12BINTR	Alliance Memory	DDR3L DRAM	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	122 mA	536870912 words	4,8	YES	COMMON	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,6X16,32	.8 mm	95 Cel		512MX16	512M	-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	800 MHz	9 mm	8589934592 bit	1.283 V	AUTO/SELF REFRESH, ALSO OPERATES AT 1.5V SUPPLY				.06 Amp	4,8	13.5 mm
AS4C512M16D3LC-10BINTR	Alliance Memory	DDR3L DRAM	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	360 mA	536870912 words	4,8	YES	COMMON	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	3-STATE	512MX16	512M	-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	933 MHz	9 mm	8589934592 bit	1.283 V					.016 Amp	4,8	13 mm
AS4C512M16D3LC-12BCN	Alliance Memory	DDR3L DRAM	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	350 mA	536870912 words	4,8	YES	COMMON	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	3-STATE	512MX16	512M	0 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	800 MHz	9 mm	8589934592 bit	1.283 V					.016 Amp	4,8	13 mm
AS4C512M16D3LC-12BINTR	Alliance Memory	DDR3L DRAM	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	350 mA	536870912 words	4,8	YES	COMMON	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	3-STATE	512MX16	512M	-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	800 MHz	9 mm	8589934592 bit	1.283 V					.016 Amp	4,8	13 mm
AS4C512M16D3LC-12BCNTR	Alliance Memory	DDR3L DRAM	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	350 mA	536870912 words	4,8	YES	COMMON	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	3-STATE	512MX16	512M	0 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	800 MHz	9 mm	8589934592 bit	1.283 V					.016 Amp	4,8	13 mm
AS4C512M16D3LC-10BIN	Alliance Memory	DDR3L DRAM	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	360 mA	536870912 words	4,8	YES	COMMON	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	3-STATE	512MX16	512M	-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	933 MHz	9 mm	8589934592 bit	1.283 V					.016 Amp	4,8	13 mm
AS4C512M16D3LC-12BIN	Alliance Memory	DDR3L DRAM	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	350 mA	536870912 words	4,8	YES	COMMON	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	3-STATE	512MX16	512M	-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	800 MHz	9 mm	8589934592 bit	1.283 V					.016 Amp	4,8	13 mm
AS4C512M16D3LC-10BCN	Alliance Memory	DDR3L DRAM	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	360 mA	536870912 words	4,8	YES	COMMON	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	3-STATE	512MX16	512M	0 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	933 MHz	9 mm	8589934592 bit	1.283 V					.016 Amp	4,8	13 mm
MTA16ATF4G64HZ-3G2F1	Micron Technology	DDR4 DRAM MODULE	260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		4294967296 words		YES			64	MICROELECTRONIC ASSEMBLY	DIMM260,20	.5 mm	95 Cel		4GX64	4G	0 Cel		DUAL	1	R-XDMA-N260			30.15 mm		3.7 mm	274877906944 bit		AUTO REFRESH AND SELF REFRESH; WIDTH MAX						69.6 mm
MT40A8G4NEA-062E:F	Micron Technology	DDR4 DRAM	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	308 mA	8589934592 words		YES	COMMON	1.2	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X11,32	.8 mm	95 Cel		8GX4	8G	0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1600 MHz	7.5 mm	34359738368 bit	1.14 V							11 mm
MT53E1536M32D4DT-046AIT:A	Micron Technology	LPDDR4 DRAM	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		1610612736 words	16,32	YES	COMMON	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	95 Cel		1536MX32	1536M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.95 V	.95 mm	2136.7 MHz	10 mm	51539607552 bit	1.7 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM					16,32	14.5 mm
MT53E256M32D2DS-046AUT:B	Micron Technology	LPDDR4 DRAM	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	125 Cel	3-STATE	256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	2133 MHz	10 mm	8589934592 bit	1.06 V						16,32	14.5 mm
MT53E256M32D2FW-046AIT:B	Micron Technology	LPDDR4 DRAM	200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	95 Cel	3-STATE	256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.1 mm	2133 MHz	10 mm	8589934592 bit	1.06 V						16,32	14.5 mm
MT53E256M16D1FW-046AAT:B	Micron Technology	LPDDR4 DRAM	200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	105 Cel	3-STATE	256MX16	256M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.1 mm	2133 MHz	10 mm	4294967296 bit	1.06 V						16,32	14.5 mm
MT53E256M32D2DS-046AIT:B	Micron Technology	LPDDR4 DRAM	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	95 Cel	3-STATE	256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	2133 MHz	10 mm	8589934592 bit	1.06 V						16,32	14.5 mm
MT53E256M16D1DS-046AIT:B	Micron Technology	LPDDR4 DRAM	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	95 Cel	3-STATE	256MX16	256M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	2133 MHz	10 mm	4294967296 bit	1.06 V						16,32	14.5 mm
MT53E768M32D4DT-053WT:E	Micron Technology	LPDDR4 DRAM	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		805306368 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	85 Cel	3-STATE	768MX32	768M	-25 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.95 mm	1866 MHz	10 mm	25769803776 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E1536M32D4DE-046AIT:B	Micron Technology	LPDDR4 DRAM	200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	260 mA	1610612736 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32	.8 mm	95 Cel	3-STATE	1536MX32	1536M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.14 mm	2133 MHz	10 mm	51539607552 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM				.00075 Amp	16,32	14.5 mm
MT53E1536M32D4DE-046AAT:B	Micron Technology	LPDDR4 DRAM	200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	260 mA	1610612736 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32	.8 mm	105 Cel	3-STATE	1536MX32	1536M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.14 mm	2133 MHz	10 mm	51539607552 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM				.00075 Amp	16,32	14.5 mm
MTA36ASF4G72PBZ-3G2E1	Micron Technology	DDR4 DRAM MODULE	288	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS			SYNCHRONOUS	4698 mA	4294967296 words		YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY			105 Cel		4GX72	4G	-40 Cel		DUAL	1	R-XDMA-N288		1.26 V		1600 MHz		309237645312 bit	1.14 V					.72 Amp
MT40A512M16TB-062EIT:R	Micron Technology	DDR4 DRAM	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	3-STATE	512MX16	512M	-40 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1600 MHz	7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH					8	13 mm
MT40A1G16TD-062EAUT:F	Micron Technology	DDR4 DRAM	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	200 mA	1073741824 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	85 Cel	3-STATE	1GX16	1G	-40 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1600 MHz	7.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH				.038 Amp	8	13 mm
MT53E2G32D4NQ-046WT:A	Micron Technology	LPDDR4 DRAM				RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words		NO			32				85 Cel		2GX32	2G	-25 Cel		BOTTOM	1	R-PBGA-B						68719476736 bit
MT53E256M32D1KS-046AAT:L	Micron Technology	LPDDR4 DRAM	200	VFBGA	32768	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100, ISO 26262	BALL	SYNCHRONOUS	42.3 mA	268435456 words	16,32	YES	COMMON	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	105 Cel		256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.95 V	.95 mm	2133 MHz	10 mm	8589934592 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY				.0009 Amp	16,32	14.5 mm
MT40A2G8AG-062EAAT:F	Micron Technology	DDR4 DRAM	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	81 mA	2147483648 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	105 Cel		2GX8	2G	-40 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1600 MHz	9 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH				.084 Amp	8	11 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.