RECTANGULAR DRAM 1,707

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT53D1024M32D4DT-046AAT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	105 Cel			1GX32	1G		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.95 mm	2136.7 MHz	10 mm	34359738368 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX		NOT SPECIFIED	NOT SPECIFIED		16,32	14.5 mm
MT53E256M32D2DS-046AAT:B	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	105 Cel		3-STATE	256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	2133 MHz	10 mm	8589934592 bit	1.06 V			NOT SPECIFIED	NOT SPECIFIED		16,32	14.5 mm
MT53E768M32D4DT-046AAT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		805306368 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	105 Cel		3-STATE	768MX32	768M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.95 mm	2133 MHz	10 mm	25769803776 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX		NOT SPECIFIED	NOT SPECIFIED		16,32	14.5 mm
MT53E768M32D4DT-053AAT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		805306368 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	105 Cel		3-STATE	768MX32	768M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.95 mm	1866 MHz	10 mm	25769803776 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX		NOT SPECIFIED	NOT SPECIFIED		16,32	14.5 mm
MT40A512M16LY-062EAT:E	Micron Technology	DDR4 DRAM	INDUSTRIAL	96	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	105 Cel	NO		512MX16	512M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	13.5 mm
MT40A1G8SA-062E:ETR	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	95 Cel			1GX8	1G		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260			11 mm
MT40A256M16LY-062E:FTR	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	312 mA	268435456 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		3-STATE	256MX16	256M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1600 MHz	7.5 mm	4294967296 bit	1.14 V		e1	30	260	.003 Amp	8	13.5 mm
MT40A2G4SA-062E:ETR	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words		YES		1.2	4	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	95 Cel			2GX4	2G		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260			11 mm
MT40A2G8VA-062EIT:BTR	Micron Technology	DDR4 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words		YES		1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	95 Cel			2GX8	2G		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		10 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260			11 mm
MT40A4G4DVN-062H:ETR	Micron Technology	DDR4 DRAM	OTHER	78	BGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		4294967296 words		YES		1.2	4	GRID ARRAY			95 Cel			4GX4	4G		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V				17179869184 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260
MT40A512M16JY-062E:BTR	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	95 Cel			512MX16	512M		0 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		8 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH						14 mm
MT40A512M8RH-083EAAT:BTR	Micron Technology	DDR4 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	105 Cel		3-STATE	512MX8	512M	1.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1200.4 MHz	9 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	10.5 mm
MT40A512M8RH-083EAUT:BTR	Micron Technology	DDR4 DRAM	AUTOMOTIVE	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	125 Cel		3-STATE	512MX8	512M	1.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1200.4 MHz	9 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	10.5 mm
MT40A8G4CLU-062H:ETR	Micron Technology	DDR4 DRAM	OTHER	78	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8589934592 words		YES		1.2	4	GRID ARRAY			95 Cel			8GX4	8G		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V				34359738368 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260
MT40A8G4CLU-075H:ETR	Micron Technology	DDR4 DRAM	OTHER	78	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8589934592 words		YES		1.2	4	GRID ARRAY			95 Cel			8GX4	8G		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V				34359738368 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260
MT41K256M8DA-107:KTR	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35	8	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	95 Cel			256MX8	256M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	3	1.45 V	1.2 mm		8 mm	2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			10.5 mm
MT41K512M4DA-125:KTR	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.35	4	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	95 Cel			512MX4	512M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		8 mm	2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1					10.5 mm
MT49H16M18CSJ-25IT:BTR	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words				1.8	18	GRID ARRAY, THIN PROFILE		1 mm	85 Cel			16MX18	16M		-40 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	301989888 bit	1.7 V	AUTO REFRESH; TERM PITCH-MAX		NOT SPECIFIED	NOT SPECIFIED			18.5 mm
MT49H16M36SJ-18:BTR	Micron Technology	DDR DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words				1.8	36	GRID ARRAY, THIN PROFILE		1 mm	95 Cel			16MX36	16M		0 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	603979776 bit	1.7 V	AUTO REFRESH; TERM PITCH-MAX						18.5 mm
MT49H16M36SJ-18IT:BTR	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words				1.8	36	GRID ARRAY, THIN PROFILE		1 mm	85 Cel			16MX36	16M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	603979776 bit	1.7 V	AUTO REFRESH; TERM PITCH-MAX	e1	30	260			18.5 mm
MT49H16M36SJ-25E:BTR	Micron Technology	DDR DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words				1.8	36	GRID ARRAY, THIN PROFILE		1 mm	95 Cel			16MX36	16M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	603979776 bit	1.7 V	AUTO REFRESH; TERM PITCH-MAX	e1	30	260			18.5 mm
MT49H8M36SJ-25E:BTR	Micron Technology	DDR DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words				1.8	36	GRID ARRAY, THIN PROFILE		1 mm	95 Cel			8MX36	8M		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	301989888 bit	1.7 V	AUTO REFRESH; TERM PITCH-MAX	e1	30	260			18.5 mm
MT49H8M36SJ-25IT:BTR	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words				1.8	36	GRID ARRAY, THIN PROFILE		1 mm	85 Cel			8MX36	8M		-40 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	301989888 bit	1.7 V	AUTO REFRESH; TERM PITCH-MAX						18.5 mm
MTA9ASF1G72PZ-3G2E2	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1710 mA	1073741824 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel		OPEN-DRAIN	1GX72	1G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.55 mm	1612 MHz	3.9 mm	77309411328 bit	1.14 V					.198 Amp	8	133.35 mm
MTA16ATF2G64HZ-2G1B1	Micron Technology	DDR DRAM MODULE	OTHER	260			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	64	MICROELECTRONIC ASSEMBLY			95 Cel			2GX64	2G		0 Cel		ZIG-ZAG	1	R-XZMA-N260		1.26 V	30.13 mm		3.7 mm	137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						69.6 mm
MTA16ATF2G64HZ-2G6E1	Micron Technology	DDR DRAM MODULE	OTHER	260			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	64	MICROELECTRONIC ASSEMBLY			95 Cel			2GX64	2G		0 Cel		ZIG-ZAG	1	R-XZMA-N260		1.26 V	30.13 mm		3.7 mm	137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						69.6 mm
MT53B1024M32D4NQ-062WT:C	Micron Technology	DDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	85 Cel			1GX32	1G		-30 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.95 mm	1600 MHz	10 mm	34359738368 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM					16,32	14.5 mm
AS4C16M16SA-7TCNTR	Alliance Memory	SYNCHRONOUS DRAM		54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	55 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	.8 mm	70 Cel			16MX16	16M		0 Cel		DUAL	1	R-PDSO-G54	3	3.6 V	1.2 mm	143 MHz	10.16 mm	268435456 bit	3 V	AUTO/SELF REFRESH				.02 Amp	1,2,4,8	22.22 mm	5.4 ns
AS4C1G8MD3L-12BCNTR	Alliance Memory	DDR3L DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	125 mA	1073741824 words	4,8	YES	COMMON	1.35	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		3-STATE	1GX8	1G	1.283 V	0 Cel		BOTTOM	1	R-PBGA-B78	3	1.45 V	1.2 mm	800 MHz	9 mm	8589934592 bit	1.283 V					.011 Amp	4,8	13.2 mm
AS4C256M16D3B-12BINTR	Alliance Memory	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	55 mA	268435456 words	4,8	YES	COMMON	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		3-STATE	256MX16	256M	1.425 V	-40 Cel		BOTTOM	1	R-PBGA-B96	3	1.575 V	1.2 mm	800 MHz	9 mm	4294967296 bit	1.425 V	AUTO/SELF REFRESH				.032 Amp	4,8	13.5 mm
AS4C512M16D3L-12BCNTR	Alliance Memory	DDR3L DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	185 mA	536870912 words	4,8	YES	COMMON	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		3-STATE	512MX16	512M	1.283 V	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm	800 MHz	9 mm	8589934592 bit	1.283 V		e1			.011 Amp	4,8	14 mm
AS4C512M16D3L-12BINTR	Alliance Memory	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	185 mA	536870912 words	4,8	YES	COMMON	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		3-STATE	512MX16	512M	1.283 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm	800 MHz	9 mm	8589934592 bit	1.283 V		e1			.011 Amp	4,8	14 mm
AS4C64M16D2A-25BCNTR	Alliance Memory	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	170 mA	67108864 words	4,8	YES	COMMON	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	.8 mm	85 Cel		3-STATE	64MX16	64M	1.7 V	0 Cel		BOTTOM	1	R-PBGA-B84	3	1.9 V	1.2 mm	400 MHz	8 mm	1073741824 bit	1.7 V	AUTO/SELF REFRESH				.01 Amp	4,8	12.5 mm	.4 ns
MT53B512M32D2NP-062WT:C	Micron Technology	DDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	85 Cel			512MX32	512M		-30 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1600 MHz	10 mm	17179869184 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	e1	30	260		16,32	14.5 mm
MTA8ATF2G64HZ-3G2E1	Micron Technology	DDR4 DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES			64	MICROELECTRONIC ASSEMBLY			95 Cel			2GX64	2G		0 Cel		DUAL	1	R-XDMA-N260						137438953472 bit		AUTO/SELF REFRESH
MT53E768M32D4DT-053AIT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		805306368 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	95 Cel		3-STATE	768MX32	768M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.95 mm	1866 MHz	10 mm	25769803776 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX		NOT SPECIFIED	NOT SPECIFIED		16,32	14.5 mm
IS43TR81024BL-107MBLI	Integrated Silicon Solution	DDR3L DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.35	8	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	95 Cel			1GX8	1G		-40 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		10 mm	8589934592 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			14 mm
IS46TR16640CL-107MBLA2	Integrated Silicon Solution	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	105 Cel			64MX16	64M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		9 mm	1073741824 bit	1.283 V	AUTO/SELF REFRESH						13 mm
IS43LQ32256A-062BLI	Integrated Silicon Solution	LPDDR4 DRAM		200	TFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words	16,32	NO	COMMON		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.65 mm	85 Cel			256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.95 V	1.1 mm	1600 MHz	10 mm	8589934592 bit	1.7 V	TERM PITCH-MAX; ALSO REQUIRE SUPPLY VOLTAGE 1.06V TO 1.17V					16,32	14.5 mm
IS43LQ16128A-062BLI	Integrated Silicon Solution	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words	16,32	NO	COMMON		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	95 Cel			128MX16	128M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.95 V	.85 mm	1600 MHz	10 mm	2147483648 bit	1.7 V	terminal pitch-max					16,32	14.5 mm
MT40A1G16RC-062EIT:B	Micron Technology	DDR4 DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel			1GX16	1G	1.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1600 MHz	10 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	13 mm
MT40A2G8VA-062E:B	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel			2GX8	2G	1.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1600 MHz	10 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	11 mm
MT40A4G4VA-062E:B	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		4294967296 words	8	YES	COMMON	1.2	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel			4GX4	4G	1.14 V	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1600 MHz	10 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	11 mm
MTA18ASF2G72PDZ-3G2J3	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel		OPEN-DRAIN	2GX72	2G		0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.55 mm	1600 MHz	3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					8	133.35 mm
MT40A8G4BAF-062E:B	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	277 mA	8589934592 words		YES	COMMON	1.2	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X11,32	.8 mm	95 Cel			8GX4	8G		0 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1600 MHz	10.5 mm	34359738368 bit	1.14 V							11 mm
MT40A4G8BAF-062E:B	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	245 mA	4294967296 words		YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X11,32	.8 mm	95 Cel			4GX8	4G		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1600 MHz	10.5 mm	34359738368 bit	1.14 V		e1	30	260			11 mm
MTA72ASS16G72PSZ-3S2B1	Micron Technology	DDR4 DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS		17179869184 words			COMMON	1.2	72	MICROELECTRONIC ASSEMBLY			95 Cel			16GX72	16G		0 Cel		DUAL		R-XDMA-N288				1600 MHz		1236950581248 bit
MTA18ASF2G72HBZ-3G2E1	Micron Technology	DDR4 DRAM MODULE		260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1989 mA	2147483648 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			105 Cel			2GX72	2G		-40 Cel		ZIG-ZAG	1	R-XZMA-N260			30.15 mm	1600 MHz	3.7 mm	154618822656 bit		AUTO/SELF REFRESH; WD-MAX				.468 Amp		69.6 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.