RECTANGULAR DRAM 1,707

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MTA16ATF2G64HZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	64	MICROELECTRONIC ASSEMBLY				85 Cel			2GX64	2G	0 Cel		ZIG-ZAG	1	R-XZMA-N260		1.26 V	30.13 mm		3.7 mm	137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						69.6 mm
MTA18ADF2G72AZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY				85 Cel			2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	18.9 mm		3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA18ASF2G72PDZ-3G2E1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33			95 Cel		OPEN-DRAIN	2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.55 mm	1600 MHz	3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					8	133.35 mm
MTA18ASF2G72PZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY				85 Cel			2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA4ATF51264AZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words		YES		1.2	64	MICROELECTRONIC ASSEMBLY				85 Cel			512MX64	512M	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		2.7 mm	34359738368 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA4ATF51264HZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words				1.2	64	MICROELECTRONIC ASSEMBLY				95 Cel			512MX64	512M	0 Cel		ZIG-ZAG	1	R-XZMA-N260		1.26 V	30.13 mm		2.5 mm	34359738368 bit	1.14 V	WD-MAX		NOT SPECIFIED	NOT SPECIFIED			69.6 mm
MTA8ATF1G64HZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	64	MICROELECTRONIC ASSEMBLY				85 Cel			1GX64	1G	0 Cel		ZIG-ZAG	1	R-XZMA-N260		1.26 V	30.13 mm		3.7 mm	68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED			69.6 mm
MTA9ADF1G72PZ-2G6D1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY				85 Cel			1GX72	1G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	18.9 mm		3.9 mm	77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA9ASF1G72PKIZ-3G2E1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY				85 Cel			1GX72	1G	-40 Cel		DUAL	1	R-XDMA-N288		1.26 V	30.15 mm		4 mm	77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						80 mm
MTA9ASF1G72PZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY				85 Cel			1GX72	1G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm	77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
AS4C64M16D2A-25BCN	Alliance Memory	DDR2 DRAM	INDUSTRIAL	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			64MX16	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	3	1.9 V	1.2 mm		8 mm	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	20	265			12.5 mm
AS4C256M16D3B-12BIN	Alliance Memory	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			256MX16	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.575 V	1.2 mm		9 mm	4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1	30	260			13.5 mm
MT18KSF51272HZ-1G6K2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35	72	MICROELECTRONIC ASSEMBLY			.6 mm	70 Cel			512MX72	512M	0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm	38654705664 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX						67.6 mm
MT40A1G8SA-062E:E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32		.8 mm	95 Cel	NO		1GX8	1G	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	11 mm
MT40A1G8SA-075:E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32		.8 mm	85 Cel	NO		1GX8	1G	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1				8	11 mm
MT40A2G4SA-062E:E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words		YES	COMMON	1.2	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32		.8 mm	95 Cel	NO		2GX4	2G	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	11 mm
MT40A2G4SA-075:E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words		YES	COMMON	1.2	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32		.8 mm	95 Cel	NO		2GX4	2G	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	11 mm
MT40A512M16JY-062E:B	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	NO		512MX16	512M	0 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		8 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED		8	14 mm
MT40A512M16LY-062E:E	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	NO		512MX16	512M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	13.5 mm
MTA18ASF2G72XF1Z-2G6V21AB	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY				95 Cel			2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		5.8 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED			133.35 mm
IS43TR81024BL-107MBL	Integrated Silicon Solution	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.35	8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel			1GX8	1G	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78	3	1.45 V	1.2 mm		10 mm	8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1	10	260			14 mm
MTA9ADF1G72PZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY				95 Cel			1GX72	1G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	18.9 mm		3.9 mm	77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT41K64M16TW-107XIT:J	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		67108864 words		YES		1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			64MX16	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		8 mm	1073741824 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT40A1G8WE-083EAIT:B	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	182 mA	1073741824 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		3-STATE	1GX8	1G	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1200 MHz	8 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.025 Amp	8	12 mm
MT40A1G8WE-083EAUT:B	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	192 mA	1073741824 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	125 Cel		3-STATE	1GX8	1G	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1200 MHz	8 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.042 Amp	8	12 mm
MT40A512M16JY-083EAUT:B	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	273 mA	536870912 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	125 Cel		3-STATE	512MX16	512M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1200 MHz	8 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.042 Amp	8	14 mm
MT61K256M32JE-12:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM	OTHER	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.25	32	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	95 Cel			256MX32	256M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B180		1.2875 V	1.2 mm		12 mm	8589934592 bit	1.2125 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT61K256M32JE-13:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM	OTHER	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35	32	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	95 Cel			256MX32	256M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B180		1.3905 V	1.2 mm		12 mm	8589934592 bit	1.3095 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT61K256M32JE-14:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM	OTHER	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.25	32	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	95 Cel			256MX32	256M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B180		1.2875 V	1.2 mm		12 mm	8589934592 bit	1.2125 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MTA9ADF1G72AZ-3G2E1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY				95 Cel			1GX72	1G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	18.9 mm		2.7 mm	77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
W631GU6MB12I	Winbond Electronics	DDR3L DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.35	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	95 Cel			64MX16	64M	-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1 mm		7.5 mm	1073741824 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm
MT36KSF2G72PZ-1G6E1	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.35	72	MICROELECTRONIC ASSEMBLY		8	1 mm	95 Cel			2GX72	2G	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.5 mm		4 mm	154618822656 bit	1.283 V	SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED			133.35 mm
MT16HTF25664HIZ-667M1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8	64	MICROELECTRONIC ASSEMBLY				85 Cel			256MX64	256M	-40 Cel		ZIG-ZAG	1	R-XZMA-N200		1.9 V	30.15 mm		3.8 mm	17179869184 bit	1.7 V	SELF REFRESH; WD-MAX						67.6 mm
MT61M256M32JE-10N:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM MODULE	OTHER	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.25	32	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	95 Cel			256MX32	256M	0 Cel		BOTTOM	1	R-PBGA-B180		1.2875 V	1.2 mm		12 mm	8589934592 bit	1.2125 V	AUTO/SELF REFRESH		30	260			14 mm
MT61M256M32JE-12N:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM MODULE	OTHER	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.25	32	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	95 Cel			256MX32	256M	0 Cel		BOTTOM	1	R-PBGA-B180		1.2875 V	1.2 mm		12 mm	8589934592 bit	1.2125 V	AUTO/SELF REFRESH		30	260			14 mm
MT36KSF2G72PZ-1G6N1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.35	72	MICROELECTRONIC ASSEMBLY				70 Cel			2GX72	2G	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.5 mm		4 mm	154618822656 bit	1.283 V	SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX						133.35 mm
MT36KSF2G72PZ-1G6P1	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.35	72	MICROELECTRONIC ASSEMBLY				70 Cel			2GX72	2G	0 Cel		DUAL	1	R-XDMA-N240		1.45 V	30.5 mm		4 mm	154618822656 bit	1.283 V	SELF REFRESH; IT ALSO REQUIRES 1.5V NOM; WD-MAX						133.35 mm
MTA36ASF4G72PZ-2G3A1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		4294967296 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY				95 Cel			4GX72	4G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm	309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA36ASF4G72PZ-2G3B1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		4294967296 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY				95 Cel			4GX72	4G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm	309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT46V16M16P-5BIT:MTR	Micron Technology	DDR1 DRAM	INDUSTRIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		16777216 words		YES		2.6	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	85 Cel			16MX16	16M	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm	268435456 bit	2.5 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	.7 ns
MT41J256M16HA-125:ETR	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel			256MX16	256M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		9 mm	4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT41K256M8DA-107AIT:K	Micron Technology	DDR3L DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words		YES		1.35	8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel			256MX8	256M	-40 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		8 mm	2147483648 bit	1.283 V	AUTO/SELF REFRESH						10.5 mm
MT41K256M8DA-125AUT:K	Micron Technology	DDR3L DRAM	AUTOMOTIVE	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words		YES		1.35	8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	125 Cel			256MX8	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		8 mm	2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			10.5 mm
MT16KTF1G64HZ-1G9E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35	64	MICROELECTRONIC ASSEMBLY				70 Cel			1GX64	1G	0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm	68719476736 bit	1.283 V	SELF REFRESH; WD-MAX						67.6 mm
MT16KTF1G64HZ-1G9P1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35	64	MICROELECTRONIC ASSEMBLY				70 Cel			1GX64	1G	0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm	68719476736 bit	1.283 V	SELF REFRESH; WD-MAX		30	260			67.6 mm
MT16KTF2G64HZ-1G6A1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.35	64	MICROELECTRONIC ASSEMBLY				70 Cel			2GX64	2G	0 Cel		ZIG-ZAG	1	R-XZMA-N204		1.45 V	30.15 mm		3.8 mm	137438953472 bit	1.283 V	SELF REFRESH; WD-MAX		30	260			67.6 mm
MT61M256M32JE-12NIT:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM MODULE	INDUSTRIAL	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.25	32	GRID ARRAY, THIN PROFILE, FINE PITCH			.75 mm	95 Cel			256MX32	256M	-40 Cel		BOTTOM	1	R-PBGA-B180		1.2875 V	1.2 mm		12 mm	8589934592 bit	1.2125 V	AUTO/SELF REFRESH		30	260			14 mm
AS4C64M16D3LB-12BINTR	Alliance Memory	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel			64MX16	64M	-40 Cel		BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm		9 mm	1073741824 bit	1.283 V	AUTO/SELF REFRESH						13 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.