RECTANGULAR DRAM 1,707

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT47H64M8CF-25EIT:GTR	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		64MX8	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm		8 mm	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					10 mm	.4 ns
MT48LC16M8A2P-7E:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		16777216 words		YES		3.3	8	SMALL OUTLINE, THIN PROFILE		.8 mm	70 Cel		16MX8	16M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	134217728 bit	3 V	AUTO/SELF REFRESH	e3					22.22 mm	5.4 ns
MT48LC16M8A2P-7E:LTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		16777216 words		YES		3.3	8	SMALL OUTLINE, THIN PROFILE		.8 mm	70 Cel		16MX8	16M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	134217728 bit	3 V	AUTO/SELF REFRESH	e3					22.22 mm	5.4 ns
MT48LC4M16A2P-7EIT:JTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		4194304 words		YES		3.3	16	SMALL OUTLINE, THIN PROFILE		.8 mm	85 Cel		4MX16	4M	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	67108864 bit	3 V	AUTO/SELF REFRESH	e3					22.22 mm	5.4 ns
MT48LC4M32B2P-7IT:GTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	86	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		4194304 words		YES		3.3	32	SMALL OUTLINE, THIN PROFILE		.5 mm	85 Cel		4MX32	4M	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G86		3.6 V	1.2 mm		10.16 mm	134217728 bit	3 V	AUTO/SELF REFRESH	e3					22.22 mm	5.5 ns
MT48LC8M16A2P-6A:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		8388608 words		YES		3.3	16	SMALL OUTLINE, THIN PROFILE		.8 mm	70 Cel		8MX16	8M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	134217728 bit	3 V	AUTO/SELF REFRESH	e3					22.22 mm	5.4 ns
MT41J256M16HA-093:ETR	Micron Technology	DDR3 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		256MX16	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm		9 mm	4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1					14 mm
MT41J512M8RH-093:ETR	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		512MX8	512M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm		9 mm	4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1					10.5 mm
MT46H64M32LFCM-6IT:ATR	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.8 mm	85 Cel		64MX32	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		10 mm	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	5 ns
MT47H64M16HR-25EXIT:HTR	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	ASYNCHRONOUS		67108864 words		YES		1.8	16	GRID ARRAY			85 Cel		64MX16	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V				1073741824 bit	1.7 V	SELF REFRESH	e1
MT48H16M32LFB5-75IT:CTR	Micron Technology	DDR DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.8 mm	85 Cel		16MX32	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		8 mm	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	5.4 ns
MT48H16M32LFCM-75:BTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.8 mm	70 Cel		16MX32	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		10 mm	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	5.4 ns
MT48H32M16LFBF-75:BTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.8 mm	70 Cel		32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54		1.95 V	1 mm		8 mm	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					9 mm	5.4 ns
MT48H32M16LFBF-75IT:BTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.8 mm	85 Cel		32MX16	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54		1.95 V	1 mm		8 mm	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					9 mm	5.4 ns
MT48LC2M32B2P-5:JTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	86	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		2097152 words		YES		3.3	32	SMALL OUTLINE, THIN PROFILE		.5 mm	70 Cel		2MX32	2M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G86		3.6 V	1.2 mm		10.16 mm	67108864 bit	3 V	AUTO/SELF REFRESH	e3					22.22 mm	4.5 ns
MT48LC2M32B2P-6A:JTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	86	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		2097152 words		YES		3.3	32	SMALL OUTLINE, THIN PROFILE		.5 mm	70 Cel		2MX32	2M	0 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G86		3.6 V	1.2 mm		10.16 mm	67108864 bit	3 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	5.4 ns
MT48LC8M16A2P-75:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		8388608 words		YES		3.3	16	SMALL OUTLINE, THIN PROFILE		.8 mm	70 Cel		8MX16	8M	0 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	134217728 bit	3 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	5.4 ns
MT48LC8M16A2P-7EIT:LTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		8388608 words		YES		3.3	16	SMALL OUTLINE, THIN PROFILE		.8 mm	85 Cel		8MX16	8M	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	134217728 bit	3 V	AUTO/SELF REFRESH	e3					22.22 mm	5.4 ns
MT47H128M8CF-25E:HTR	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm		8 mm	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1					10 mm	.4 ns
MT47H128M8CF-25EIT:HTR	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		128MX8	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm		8 mm	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1					10 mm	.4 ns
MT47H64M16HR-25:HTR	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		64MX16	64M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		8 mm	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1					12.5 mm	.4 ns
MT47H64M16HR-25IT:HTR	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		64MX16	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		8 mm	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1					12.5 mm	.4 ns
MT47H64M16HR-3:HTR	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		64MX16	64M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B84	3	1.9 V	1.2 mm		8 mm	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260			12.5 mm	.45 ns
MT48LC4M32B2P-6A:LTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	86	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		4194304 words		YES		3.3	32	SMALL OUTLINE, THIN PROFILE		.5 mm	70 Cel		4MX32	4M	0 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G86		3.6 V	1.2 mm		10.16 mm	134217728 bit	3 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	5.4 ns
MT48LC4M32B2P-6AXIT:LTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	86	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	GULL WING	SYNCHRONOUS		4194304 words		YES		3.3	32	SMALL OUTLINE, THIN PROFILE		.5 mm	85 Cel		4MX32	4M	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G86		3.6 V	1.2 mm		10.16 mm	134217728 bit	3 V	AUTO/SELF REFRESH	e3					22.22 mm	5.4 ns
MT48LC4M32B2P-7:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	86	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		4194304 words		YES		3.3	32	SMALL OUTLINE, THIN PROFILE		.5 mm	70 Cel		4MX32	4M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G86		3.6 V	1.2 mm		10.16 mm	134217728 bit	3 V	AUTO/SELF REFRESH	e3					22.22 mm	5.5 ns
MT47H256M8THN-3:HTR	Micron Technology	DDR2 DRAM	OTHER	63	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		256MX8	256M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B63		1.9 V	1.2 mm		8 mm	2147483648 bit	1.7 V	SELF REFRESH	e1					10 mm
MTA18ADF2G72PZ-2G6D1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			85 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	18.9 mm		3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA18ASF2G72HZ-2G6D1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			85 Cel		2GX72	2G	0 Cel		ZIG-ZAG	1	R-XZMA-N260		1.26 V	30.13 mm		3.7 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						69.6 mm
MTA18ASF2G72PDZ-2G6D1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			85 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA18ASF2G72PZ-2G6D1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	3600 mA	2147483648 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel	OPEN-DRAIN	2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm	1333 MHz	3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX				.45 Amp	8	133.35 mm
MTA36ASF4G72LZ-2G6D1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		4294967296 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			85 Cel		4GX72	4G	0 Cel		DUAL	1	R-XDMA-N288		1.26 V	31.4 mm		3.9 mm	309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT40A1G8WE-075EAIT:B	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	182 mA	1073741824 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel	3-STATE	1GX8	1G	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1333 MHz	8 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.025 Amp	8	12 mm
EDB4432BBBJ-1D-F-R	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm			128MX32	128M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B134		1.3 V	.75 mm		10 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	e1					11.5 mm
EDB1316BDBH-1DIT-F-D	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm	85 Cel		64MX16	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B134		1.3 V	1 mm		10 mm	1073741824 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	e1					11.5 mm
EDB1332BDBH-1DIT-F-D	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm	85 Cel		32MX32	32M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B134		1.3 V	1 mm		10 mm	1073741824 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	e1	30	260			11.5 mm
EDB2432B4MA-1DIT-F-D	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm	85 Cel		64MX32	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B134		1.3 V	1 mm		10 mm	2147483648 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	e1	30	260			11.5 mm
EDB4416BBBH-1DIT-F-D	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm	85 Cel		256MX16	256M	-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	.75 mm		10 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY						11.5 mm
EDB4416BBBH-1DIT-F-RTR	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm	85 Cel		256MX16	256M	-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	.75 mm		10 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY						11.5 mm
EDB4416BBBH-1DIT-F-R	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm	85 Cel		256MX16	256M	-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	.75 mm		10 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY						11.5 mm
EDB4432BBBJ-1D-F-D	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm			128MX32	128M			BOTTOM	1	R-PBGA-B134		1.3 V	.75 mm		10 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY						11.5 mm
EDB1316BDBH-1DAAT-F-D	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm			64MX16	64M			BOTTOM	1	R-PBGA-B134		1.3 V	1 mm		10 mm	1073741824 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
EDB1316BDBH-1DAAT-F-RTR	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm	105 Cel		64MX16	64M	-40 Cel		BOTTOM	1	R-PBGA-B134		1.95 V	1 mm		10 mm	1073741824 bit	1.7 V	SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
EDB1316BDBH-1DAUT-F-D	Micron Technology	LPDDR2 DRAM	AUTOMOTIVE	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm	125 Cel		64MX16	64M	-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	1 mm		10 mm	1073741824 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
EDB1316BDBH-1DAUT-F-RTR	Micron Technology	LPDDR2 DRAM	AUTOMOTIVE	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words				1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm	125 Cel		64MX16	64M	-40 Cel		BOTTOM	1	R-PBGA-B134		1.95 V	1 mm		10 mm	1073741824 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			11.5 mm
EDB1332BDBH-1DAUT-F-D	Micron Technology	LPDDR2 DRAM	AUTOMOTIVE	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm	125 Cel		32MX32	32M	-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	1 mm		10 mm	1073741824 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
EDB1332BDBH-1DAUT-F-RTR	Micron Technology	LPDDR2 DRAM	AUTOMOTIVE	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words				1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm	125 Cel		64MX16	64M	-40 Cel		BOTTOM	1	R-PBGA-B134		1.95 V	1 mm		10 mm	1073741824 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED			11.5 mm
EDB2432B4MA-1DAAT-F-D	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm			64MX32	64M			BOTTOM	1	R-PBGA-B134		1.3 V	1 mm		10 mm	2147483648 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			11.5 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.