RECTANGULAR DRAM 1,707

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT53E768M32D4DT-053AUT:E	Micron Technology	LPDDR4 DRAM	AUTOMOTIVE	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		805306368 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	125 Cel		3-STATE	768MX32	768M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.95 mm	1866 MHz	10 mm	25769803776 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E384M32D2DS-053AUT:E	Micron Technology	LPDDR4 DRAM	AUTOMOTIVE	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		402653184 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	125 Cel		3-STATE	384MX32	384M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1866 MHz	10 mm	12884901888 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E384M32D2FW-046AIT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		402653184 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	95 Cel		3-STATE	384MX32	384M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.1 mm	2133 MHz	10 mm	12884901888 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E768M32D4DE-046AIT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		805306368 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	95 Cel		3-STATE	768MX32	768M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.14 mm	2133 MHz	10 mm	25769803776 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E384M32D2DS-046AAT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		402653184 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	105 Cel		3-STATE	384MX32	384M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	2133 MHz	10 mm	12884901888 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E384M32D2DS-046AUT:E	Micron Technology	LPDDR4 DRAM	AUTOMOTIVE	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		402653184 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	125 Cel		3-STATE	384MX32	384M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	2133 MHz	10 mm	12884901888 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E384M32D2FW-046AAT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		402653184 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	105 Cel		3-STATE	384MX32	384M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.1 mm	2133 MHz	10 mm	12884901888 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53E768M32D4DT-046AUT:E	Micron Technology	LPDDR4 DRAM	AUTOMOTIVE	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		805306368 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	125 Cel		3-STATE	768MX32	768M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.95 mm	2133 MHz	10 mm	25769803776 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT46H32M32LFT68MWC2	Micron Technology	LPDDR1 DRAM			DIE		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	YES	1	CMOS		NO LEAD	SYNCHRONOUS		33554432 words	2,4,8,16	YES	COMMON	1.8	32	UNCASED CHIP			85 Cel		3-STATE	32MX32	32M	-40 Cel		UPPER	1	R-XUUC-N		1.95 V		166 MHz		1073741824 bit	1.7 V	AUTO/SELF REFRESH					2,4,8,16
MT48LC16M16A2P-6AXIT:GTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	100 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	.8 mm	85 Cel		3-STATE	16MX16	16M	-40 Cel		DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	167 MHz	10.16 mm	268435456 bit	3 V	AUTO/SELF REFRESH				.0025 Amp	1,2,4,8	22.22 mm	5.4 ns
IS43QR16256B-083RBLI-TR	Integrated Silicon Solution	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	375 mA	268435456 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel			256MX16	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.26 V	1.2 mm	1200.48 MHz	7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH		30	260	.058 Amp	8	13.5 mm
MT40A512M16LY-062EIT:ETR	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel			512MX16	512M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.26 V	1.2 mm	1600 MHz	7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	13.5 mm
MT53D1024M32D4NQ-062WT:D	Micron Technology	LPDDR4 DRAM		200			RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.8	32				85 Cel			1GX32	1G	-25 Cel		BOTTOM	1			1.95 V	.95 mm	1600 MHz	10 mm	34359738368 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY					16,32	14.5 mm
MT53D1024M32D4DT-053WT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	85 Cel			1GX32	1G	-25 Cel		BOTTOM	1			1.95 V	.95 mm	1869.1 MHz	10 mm	34359738368 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53D1024M32D4NQ-046WT:D	Micron Technology	LPDDR4 DRAM		200			RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.8	32				85 Cel			1GX32	1G	-25 Cel		BOTTOM	1			1.95 V	.95 mm	2136.7 MHz	10 mm	34359738368 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY					16,32	14.5 mm
MT53D1024M32D4NQ-053WT:D	Micron Technology	LPDDR4 DRAM		200			RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.8	32				85 Cel			1GX32	1G	-25 Cel		BOTTOM	1			1.95 V	.95 mm	1869.1 MHz	10 mm	34359738368 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY					16,32	14.5 mm
MT53D512M32D2DS-046WT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25	.8 mm	85 Cel			512MX32	512M	-25 Cel		BOTTOM	1			1.95 V	.8 mm	2136.7 MHz	10 mm	17179869184 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY, TERM PITCH-MAX					16,32	14.5 mm
MT53D512M32D2NP-053WT:D	Micron Technology	LPDDR4 DRAM		200			RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.8	32				85 Cel			512MX32	512M	-25 Cel		BOTTOM	1			1.95 V	.8 mm	1869.1 MHz	10 mm	17179869184 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY					16,32	14.5 mm
MT53D512M32D2NP-062WT:D	Micron Technology	LPDDR4 DRAM		200			RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.8	32				85 Cel			512MX32	512M	-25 Cel		BOTTOM	1			1.95 V	.8 mm	1600 MHz	10 mm	17179869184 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY					16,32	14.5 mm
MT53D512M32D2NP-046WT:D	Micron Technology	LPDDR4 DRAM		200			RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.8	32				85 Cel			512MX32	512M	-25 Cel		BOTTOM	1			1.95 V	.8 mm	2136.7 MHz	10 mm	17179869184 bit	1.7 V	SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY					16,32	14.5 mm
MT48LC8M16A2P-6AXIT:L	Micron Technology	SYNCHRONOUS DRAM		54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	GULL WING	SYNCHRONOUS	100 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	.8 mm	85 Cel			8MX16	8M	-40 Cel		DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	167 MHz	10.16 mm	134217728 bit	3 V	AUTO/SELF REFRESH		30	260	.0025 Amp	1,2,4,8	22.22 mm	5.4 ns
MT53B1024M32D4NQ-053WT:C	Micron Technology	DDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	85 Cel			1GX32	1G	-30 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.95 mm	1866 MHz	10 mm	34359738368 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM					16,32	14.5 mm
MT53B256M32D1NP-062WT:C	Micron Technology	DDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	85 Cel			256MX32	256M	-30 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1600 MHz	10 mm	8589934592 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		30	260		16,32	14.5 mm
MT53B512M32D2NP-053WT:C	Micron Technology	DDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	85 Cel			512MX32	512M	-30 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1866 MHz	10 mm	17179869184 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM					16,32	14.5 mm
MT53B256M32D1NP-053WT:C	Micron Technology	DDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	85 Cel			256MX32	256M	-30 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1866 MHz	10 mm	8589934592 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM					16,32	14.5 mm
MTA8ATF2G64AZ-3G2F1	Micron Technology	DDR4 DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1336 mA	2147483648 words		YES	COMMON	1.2	64	MICROELECTRONIC ASSEMBLY			95 Cel			2GX64	2G	0 Cel		DUAL	1	R-XDMA-N288			31.25 mm	1600 MHz		137438953472 bit		AUTO/SELF REFRESH				.304 Amp		133.35 mm
MT40A1G16KH-062EAUT:E	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	299 mA	1073741824 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	125 Cel			1GX16	1G	-40 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1600 MHz	9 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH				.043 Amp	8	13 mm
MT40A2G8JE-062EAUT:E	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	162 mA	2147483648 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	125 Cel			2GX8	2G	-40 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1600 MHz	9 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH		30	260	.043 Amp	8	11 mm
MT40A1G16KH-062EAIT:E	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	299 mA	1073741824 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel			1GX16	1G	-40 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1600 MHz	7.5 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH				.043 Amp	8	13 mm
MT40A2G8JE-062EAAT:E	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	162 mA	2147483648 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	105 Cel			2GX8	2G	-40 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1600 MHz	9 mm	17179869184 bit	1.14 V	AUTO/SELF REFRESH				.043 Amp	8	11 mm
MT48LC4M32B2B5-6A:LTR	Micron Technology	SYNCHRONOUS DRAM		90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	180 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	.8 mm	70 Cel		3-STATE	4MX32	4M	0 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1 mm	167 MHz	8 mm	134217728 bit	3 V	AUTO/SELF REFRESH				.0025 Amp	1,2,4,8	13 mm	5.4 ns
MTA18ADF4G72PZ-3G2F1	Micron Technology	DDR4 DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1845 mA	4294967296 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			95 Cel			4GX72	4G	0 Cel		DUAL	1	R-XDMA-N288				1600 MHz		309237645312 bit		AUTO/SELF REFRESH				.756 Amp
MT40A512M16TB-062E:R	Micron Technology	DDR4 DRAM		96	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	NO		512MX16	512M	0 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1600 MHz	7.5 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH		30	260		8	13 mm
MT41K2G4RKB-107:P	Micron Technology	DDR3L DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	163 mA	2147483648 words	8	YES	COMMON	1.35	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel		3-STATE	2GX4	2G	0 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm	933 MHz	8 mm	8589934592 bit	1.283 V	AUTO/SELF REFRESH		30	260	.022 Amp	8	10.5 mm
MTA18ASF4G72HZ-3G2F1	Micron Technology	DDR4 DRAM MODULE		260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1845 mA	4294967296 words		YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY			95 Cel			4GX72	4G	0 Cel		ZIG-ZAG	1	R-XZMA-N260			30.15 mm	1612.9 MHz	3.7 mm	309237645312 bit		AUTO/SELF REFRESH; WD-MAX				.684 Amp		69.6 mm
MTC4C10163S1SC48BA1	Micron Technology	DDR5 DRAM MODULE		262	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	778 mA	1073741824 words		YES		1.1	64	MICROELECTRONIC ASSEMBLY			95 Cel			1GX64	1G	0 Cel		DUAL	1	R-XDMA-N262				2403.8 MHz		68719476736 bit		SELF REFRESH				.065 Amp
MTC16C2085S1UC48BA1	Micron Technology	DDR5 DRAM MODULE		288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	993 mA	4294967296 words		YES		1.1	64	MICROELECTRONIC ASSEMBLY			95 Cel			4GX64	4G	0 Cel		DUAL	1	R-XDMA-N288				2403.8 MHz		274877906944 bit		SELF REFRESH				.086 Amp
MT53D1024M32D4DT-046AIT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	95 Cel			1GX32	1G	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.95 mm	2136.7 MHz	10 mm	34359738368 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53D512M32D2DS-046AUT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	125 Cel			512MX32	512M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	2136.7 MHz	10 mm	17179869184 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53D512M32D2DS-046AIT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	95 Cel			512MX32	512M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	2136.7 MHz	10 mm	17179869184 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53D1024M32D4DT-046AUT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	125 Cel			1GX32	1G	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.95 mm	2136.7 MHz	10 mm	34359738368 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53D512M32D2DS-046AAT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	105 Cel			512MX32	512M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	2136.7 MHz	10 mm	17179869184 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53E512M16D1FW-046AIT:D	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	95 Cel			512MX16	512M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.1 mm	2136.7 MHz	10 mm	8589934592 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53E512M16D1FW-046AAT:D	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	105 Cel			512MX16	512M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.1 mm	2136.7 MHz	10 mm	8589934592 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53E512M32D2FW-046AUT:D	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	125 Cel			512MX32	512M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.1 mm	2136.7 MHz	10 mm	17179869184 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53E512M32D2FW-046AIT:D	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25	.8 mm	95 Cel			512MX32	512M	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.1 mm	2136.7 MHz	10 mm	17179869184 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
S27KL0642GABHM020	Infineon Technologies	HYPERRAM		24	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		67108864 words				3	1	GRID ARRAY			125 Cel			64MX1	64M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V		200 MHz		67108864 bit	2.7 V								35 ns
S27KS0642GABHM023	Infineon Technologies	HYPERRAM		24	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		67108864 words				1.8	1	GRID ARRAY			125 Cel			64MX1	64M	-40 Cel		BOTTOM	1	R-PBGA-B24	3	2 V		200 MHz		67108864 bit	1.7 V								35 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.