RECTANGULAR DRAM 1,707

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT18HVS25672PKZ-80EH1	Micron Technology	DDR2 DRAM MODULE	COMMERCIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		268435456 words				1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N244		1.9 V	3.8 mm		18.2 mm	Not Qualified	19327352832 bit	1.7 V	AUTO REFRESH	e4					82 mm
MT16JSF51264HZ-1G4D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	3016 mA	536870912 words		YES	COMMON	1.5	1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	512MX64	512M	0 Cel		DUAL	1	R-XDMA-N204		1.575 V	3.8 mm	667 MHz	30 mm	Not Qualified	34359738368 bit	1.425 V	AUTO/SELF REFRESH				.192 Amp		67.6 mm
MT47H128M4SH-25E:H	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	150 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX4	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1			.01 Amp	4,8	10 mm	.4 ns
MT47H32M16NF-187E:H	Micron Technology	DDR2 DRAM	OTHER	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	225 mA	33554432 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	533 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1			.01 Amp	4,8	12.5 mm	.35 ns
MT47H64M8SH-25EIT:H	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	150 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1			.01 Amp	4,8	10 mm	.4 ns
MT18HVS25672PKZ-80EM1	Micron Technology	DDR2 DRAM MODULE	COMMERCIAL	244	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				70 Cel		256MX72	256M	0 Cel		DUAL	1	R-XDMA-N244		1.9 V	18.3 mm		3.8 mm		19327352832 bit	1.7 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX						82 mm
MT47H1G4WTR-25E:C	Micron Technology	DDR2 DRAM	OTHER	63	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.8		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B63		1.9 V	1.2 mm		9 mm		4294967296 bit	1.7 V	SELF REFRESH						11.5 mm
MT47H512M8WTR-25E:C	Micron Technology	DDR2 DRAM	OTHER	63	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B63		1.9 V	1.2 mm		9 mm		4294967296 bit	1.7 V	SELF REFRESH						11.5 mm
MT48LC16M16A2P-6AAIT:G	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		16MX16	16M	-40 Cel		DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		268435456 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	5.4 ns
MT48LC16M16A2P-6AL:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	150 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	16MX16	16M	0 Cel		DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	167 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH				.0025 Amp	1,2,4,8	22.22 mm	5.4 ns
MT48LC32M8A2P-6A:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	150 mA	33554432 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX8	32M	0 Cel		DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	167 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH				.0025 Amp	1,2,4,8	22.22 mm	5.4 ns
MT48LC64M4A2P-6A:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	100 mA	67108864 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	4	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	64MX4	64M	0 Cel		DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	167 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH				.0025 Amp	1,2,4,8	22.22 mm	5.4 ns
MT41K256M8DA-125AAT:K	Micron Technology	DDR3L DRAM	AUTOMOTIVE	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	195 mA	268435456 words	8	YES	COMMON	1.35	1.35	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	125 Cel	3-STATE	256MX8	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm	800 MHz	8 mm	Not Qualified	2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260	.012 Amp	8	10.5 mm
MT47H128M8SH-25EAAT:M	Micron Technology	DDR2 DRAM		60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			128MX8	128M			BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm		8 mm		1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			10 mm	.4 ns
MT47H128M8SH-25EAIT:M	Micron Technology	DDR2 DRAM		60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	210 mA	134217728 words	4,8	YES	COMMON	1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		.8 mm	95 Cel	3-STATE	128MX8	128M	-40 Cel		BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	400 MHz	8 mm		1073741824 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.01 Amp	4,8	10 mm	.4 ns
W9816G6JH-6I	Winbond Electronics	SYNCHRONOUS DRAM	INDUSTRIAL	50	TSOP2		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		1048576 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		1MX16	1M	-40 Cel		DUAL	1	R-PDSO-G50		3.6 V	1.2 mm		10.16 mm		16777216 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			20.95 mm	5 ns
IS43TR16512A-15HBLI	Integrated Silicon Solution	DDR3 DRAM		96	LFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.5		16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm			512MX16	512M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.4 mm		10 mm		8589934592 bit	1.425 V	AUTO/SELF REFRESH	e1					14 mm
MT8HTF6464HDY-667D3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	1480 mA	67108864 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N200		1.9 V	3.8 mm	333 MHz	30.5 mm	Not Qualified	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e4			.056 Amp		67.6 mm	.45 ns
MT4HTF3264AY-53ED3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1360 mA	33554432 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL		R-PDMA-N240				267 MHz		Not Qualified	2147483648 bit									.5 ns
MT8HTF6464HDY-53ED3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1380 mA	67108864 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N200				266 MHz		Not Qualified	4294967296 bit						.056 Amp			.5 ns
MT16HTF6464AY-40EB2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1880 mA	67108864 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	64MX64	64M	0 Cel		DUAL		R-PDMA-N240				200 MHz		Not Qualified	4294967296 bit						.08 Amp			.6 ns
MT4HTF3264HY-53ED3	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1360 mA	33554432 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	0 Cel		DUAL		R-PDMA-N200				267 MHz		Not Qualified	2147483648 bit						.028 Amp			.5 ns
MT16HTF12864AY-53ED4	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS		NO LEAD		1856 mA	134217728 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	128MX64	128M	0 Cel		DUAL		R-PDMA-N240				266 MHz		Not Qualified	8589934592 bit						.112 Amp			.5 ns
MT16VDDF12864HG-335D2	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	3280 mA	134217728 words		YES	COMMON	2.5	2.5	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M	0 Cel	TIN LEAD	DUAL	1	R-XDMA-N200		2.7 V		167 MHz		Not Qualified	8589934592 bit	2.3 V	AUTO/SELF REFRESH	e0			.08 Amp			.7 ns
MT18HTF12872AY-667D4	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS	3240 mA	134217728 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	85 Cel	3-STATE	128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V		333 MHz		Not Qualified	9663676416 bit	1.7 V	AUTO/SELF REFRESH	e4
MT16LSDT6464AY-13ED2	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	168			RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		67108864 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY				70 Cel		64MX64	64M	0 Cel	GOLD	DUAL	1	R-XDMA-N168		3.6 V				Not Qualified	4294967296 bit	3 V	AUTO/SELF REFRESH	e4						5.4 ns
MT36HTF25672PY-667D1	Micron Technology	DDR DRAM MODULE	OTHER	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8		72	MICROELECTRONIC ASSEMBLY				85 Cel		256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.9 V				Not Qualified	19327352832 bit	1.7 V	AUTO/SELF REFRESH	e4						45 ns
MT48H16M32L2B5-10IT	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.9 V	1.4 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm
MT48H16M32L2B5-10	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		16MX32	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.9 V	1.4 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm
MT48H16M32L2B5-8IT	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.9 V	1.4 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	8.5 ns
MT48H16M32L2B5-8	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		16MX32	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.9 V	1.4 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm
MT48H16M32L2F5-10IT	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B90		1.9 V	1.4 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e0					13 mm
MT48H16M32L2F5-10	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		16MX32	16M	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B90		1.9 V	1.4 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e0					13 mm
MT48H16M32L2F5-8IT	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX32	16M	-40 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B90		1.9 V	1.4 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e0					13 mm	8.5 ns
MT48H16M32L2F5-8	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	90	LFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.8		32	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel		16MX32	16M	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B90		1.9 V	1.4 mm		8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e0					13 mm
MT48LC32M8A2P-75IT:DTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		33554432 words		YES		3.3		8	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		32MX8	32M	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	5.4 ns
MT46V64M8BN-6IT:FTR	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		2.5		8	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		64MX8	64M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm		10 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e1	30	260			12.5 mm	.7 ns
MT47H128M8HQ-3:ETR	Micron Technology	DDR2 DRAM	COMMERCIAL EXTENDED	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX8	128M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260			11.5 mm	.45 ns
MT48H16M16LFBF-75:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	70 Cel		16MX16	16M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54		1.95 V	1 mm		8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1					9 mm	6 ns
MT48LC32M16A2P-75:CTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		33554432 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		32MX16	32M	0 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	5.4 ns
MT48LC4M32LFB5-8IT:GTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		4194304 words		YES		3.3		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		3.6 V	1 mm		8 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e1					13 mm	7 ns
MT47H128M8CF-187E:H	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	250 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	533 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1				4,8	10 mm	.35 ns
MT47H128M8CF-25:H	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	210 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1				4,8	10 mm	.4 ns
MT47H128M8CF-25E:H	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	210 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260		4,8	10 mm	.4 ns
MT47H128M8CF-25EIT:H	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	210 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260		4,8	10 mm	.4 ns
MT47H128M8CF-3:H	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	185 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B60	3	1.9 V	1.2 mm	333 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260		4,8	10 mm	.45 ns
MT47H128M8CF-3IT:H	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	185 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	333 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1				4,8	10 mm	.45 ns
MT47H128M8CF-3L:H	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	185 mA	134217728 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX8	128M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	333 MHz	8 mm	Not Qualified	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1				4,8	10 mm	.45 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.