RECTANGULAR DRAM 1,707

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT36HTF1G72PZ-80EC1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		1073741824 words		YES	COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	1GX72	1G	0 Cel	MATTE TIN	DUAL	1	R-XDMA-N240	1	1.9 V	30.5 mm	400 MHz	4 mm	Not Qualified	77309411328 bit	1.7 V	SELF REFRESH; WD-MAX	e3					133.35 mm	.4 ns
MT36HTF25672PZ-667G1	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2646 mA	268435456 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	256MX72	256M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			333 MHz		Not Qualified	19327352832 bit			e3						.45 ns
MT36JSZF1G72PZ-1G4D1	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		7200 mA	1073741824 words			COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	1GX72	1G	0 Cel	GOLD	DUAL		R-PDMA-N240				667 MHz		Not Qualified	77309411328 bit			e4			.432 Amp
MT4HTF3264HZ-667G1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1400 mA	33554432 words			COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	32MX64	32M	0 Cel	MATTE TIN	DUAL		R-PDMA-N200	1			333 MHz		Not Qualified	2147483648 bit			e3			.028 Amp			.45 ns
MT4HTF3264HZ-800G1	Micron Technology	DDR DRAM MODULE	OTHER	200	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1480 mA	33554432 words		YES	COMMON	1.8	1.8	16	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	32MX16	32M	0 Cel	MATTE TIN	DUAL	1	R-PDMA-N200	1	3.6 V	30.15 mm	400 MHz	2.45 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH	e3			.028 Amp		67.6 mm	.4 ns
MT4HTF6464HZ-800H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	1760 mA	67108864 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX64	64M	0 Cel	MATTE TIN	ZIG-ZAG	1	R-XZMA-N200	1	1.9 V	30.15 mm	400 MHz	2.45 mm	Not Qualified	4294967296 bit	1.7 V	SELF REFRESH; WD-MAX	e3			.028 Amp		67.6 mm
MT72JSS2G72PZ-1G1D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		7130 mA	2147483648 words			COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	DRAMs	1 mm	70 Cel	3-STATE	2GX72	2G	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			533 MHz		Not Qualified	154618822656 bit			e3			.864 Amp			.3 ns
MT8HTF12864HZ-667H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2240 mA	134217728 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M	0 Cel	MATTE TIN	ZIG-ZAG	1	R-XZMA-N200	1	1.9 V	30.15 mm	333 MHz	3.8 mm	Not Qualified	8589934592 bit	1.7 V	SELF REFRESH; WD-MAX	e3			.056 Amp		67.6 mm
MT8HTF12864HZ-800H1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2680 mA	134217728 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M	0 Cel	MATTE TIN	ZIG-ZAG	1	R-XZMA-N200	1	1.9 V	30.15 mm	400 MHz	3.8 mm	Not Qualified	8589934592 bit	1.7 V	SELF REFRESH; WD-MAX	e3			.056 Amp		67.6 mm
MT8JSF25664HZ-1G1D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2560 mA	268435456 words		YES	COMMON	1.5	1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	256MX64	256M	0 Cel	MATTE TIN	ZIG-ZAG	1	R-XZMA-N204	1	1.575 V	30.15 mm	533 MHz	3.8 mm	Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX	e3			.096 Amp		67.6 mm
MT8JSF25664HZ-1G4D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	2920 mA	268435456 words		YES	COMMON	1.5	1.5,3.3	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	256MX64	256M	0 Cel	MATTE TIN	DUAL	1	R-PDMA-N204	1	1.575 V	30.15 mm	667 MHz	30 mm	Not Qualified	17179869184 bit	1.425 V	AUTO/SELF REFRESH	e3			.096 Amp		67.6 mm
MT9HTF12872AZ-667H1	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2520 mA	134217728 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	128MX72	128M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			333 MHz		Not Qualified	9663676416 bit			e3			.063 Amp			.45 ns
MT9HTF12872AZ-80EH1	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		2250 mA	134217728 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	128MX72	128M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			400 MHz		Not Qualified	9663676416 bit			e3			.063 Amp			.4 ns
MT9HTF6472PKZ-667G1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	244	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1260 mA	67108864 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM244,24	DRAMs	.6 mm	70 Cel	3-STATE	64MX72	64M	0 Cel	MATTE TIN	DUAL		R-PDMA-N244	1			333 MHz		Not Qualified	4831838208 bit			e3			.063 Amp			.45 ns
MT9HVF12872PZ-80EH1	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		1890 mA	134217728 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	128MX72	128M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			400 MHz		Not Qualified	9663676416 bit			e3			.063 Amp			.4 ns
MT9HVF6472PZ-667G1	Micron Technology		COMMERCIAL	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD			67108864 words			COMMON	1.8	1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	64MX72	64M	0 Cel	MATTE TIN	DUAL		R-PDMA-N240	1			333 MHz		Not Qualified	4831838208 bit			e3			.063 Amp			.45 ns
MT9JSF25672AZ-1G4D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM	8192	RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3285 mA	268435456 words		YES	COMMON	1.5	1.5	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	70 Cel	3-STATE	256MX72	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	30.5 mm	667 MHz	2.7 mm	Not Qualified	19327352832 bit	1.425 V	SELF REFRESH; WD-MAX	e4			.108 Amp		133.35 mm	.255 ns
MT16JTF25664HZ-1G4G1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4016 mA	268435456 words			COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	256MX64	256M	0 Cel	MATTE TIN	DUAL		R-PDMA-N204	1			667 MHz		Not Qualified	17179869184 bit			e3			.192 Amp
MT16JTF25664HZ-1G6G1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4896 mA	268435456 words			COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	256MX64	256M	0 Cel	MATTE TIN	DUAL		R-PDMA-N204	1			800 MHz		Not Qualified	17179869184 bit			e3			.192 Amp
MT47H512M8WTR-3:C	Micron Technology	DDR2 DRAM	OTHER	63	FBGA	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			536870912 words			COMMON	1.8	1.8	8	GRID ARRAY, FINE PITCH	BGA63,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX8	512M	0 Cel	MATTE TIN	BOTTOM		R-PBGA-B63	1					Not Qualified	4294967296 bit			e3
MT8JTF12864HZ-1G4G1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		3920 mA	134217728 words			COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M	0 Cel	MATTE TIN	DUAL		R-PDMA-N204	1			667 MHz		Not Qualified	8589934592 bit			e3			.096 Amp			.255 ns
MT8JTF12864HZ-1G6G1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY		NO		CMOS	NO LEAD		4800 mA	134217728 words			COMMON	1.5	1.5	64	MICROELECTRONIC ASSEMBLY	DIMM204,24	DRAMs	.6 mm	70 Cel	3-STATE	128MX64	128M	0 Cel	MATTE TIN	DUAL		R-PDMA-N204	1			800 MHz		Not Qualified	8589934592 bit			e3			.096 Amp			.225 ns
IS42S16320D-7BLI-TR	Integrated Silicon Solution	CACHE DRAM MODULE	INDUSTRIAL	54	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	220 mA	33554432 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54	3	3.6 V	1.2 mm	143 MHz	8 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e1	30	260	.004 Amp	1,2,4,8	13 mm	5.4 ns
IS42S32160D-7BLI-TR	Integrated Silicon Solution	CACHE DRAM MODULE	INDUSTRIAL	90	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	300 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-40 Cel	MATTE TIN	BOTTOM	1	R-PBGA-B90	1	3.6 V	1.2 mm	143 MHz	8 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e3			.004 Amp	1,2,4,8	13 mm	5.4 ns
MT41K1G8THE-15E:D	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		1073741824 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		10.5 mm		8589934592 bit	1.283 V	SELF REFRESH						12 mm
MT41K1G8TRF-125:E	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	243 mA	1073741824 words	8	YES	COMMON	1.35	1.35	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	1GX8	1G	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm	800 MHz	9.5 mm	Not Qualified	8589934592 bit	1.283 V	SELF REFRESH	e0			.036 Amp	8	11.5 mm	.225 ns
MT41K2G4TRF-125:E	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	243 mA	2147483648 words	8	YES	COMMON	1.35	1.35	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	2GX4	2G	0 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm	800 MHz	9.5 mm	Not Qualified	8589934592 bit	1.283 V	SELF REFRESH				.036 Amp	8	11.5 mm	.225 ns
IS43DR16160A-3DBLI-TR	Integrated Silicon Solution	DDR2 DRAM	INDUSTRIAL	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	330 mA	16777216 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	333 MHz	8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH				.005 Amp	4,8	12.5 mm	.45 ns
MT48LC4M16A2P-75:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS		4194304 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel		4MX16	4M	0 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G54	3	3.6 V	1.2 mm		10.16 mm		67108864 bit	3 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	5.4 ns
W9725G6KB25I	Winbond Electronics	DDR2 DRAM	INDUSTRIAL	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	135 mA	16777216 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.006 Amp	4,8	12.5 mm	.4 ns
MT48H8M32LFB5-75IT:H	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	VFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	85 mA	8388608 words	1,2,4,8,FP	YES	COMMON	1.8	1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm	133 MHz	8 mm	Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1			.00001 Amp	1,2,4,8	13 mm	5.4 ns
MT16LSDF6464HY-13EG1	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		67108864 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY			.8 mm	65 Cel		64MX64	64M	0 Cel	Gold (Au)	ZIG-ZAG	1	R-XZMA-N144		3.6 V	31.88 mm		3.8 mm		4294967296 bit	3 V	AUTO/SELF REFRESH; WD-MAX	e4	30	260			67.585 mm	5.4 ns
TMS4030JL	Texas Instruments		COMMERCIAL	22	DIP	64	RECTANGULAR	CERAMIC		NO		MOS	THROUGH-HOLE		60 mA	4096 words			SEPARATE			1	IN-LINE	DIP22,.4	Other Memory ICs	2.54 mm	70 Cel	3-STATE	4KX1	4K	0 Cel		DUAL		R-XDIP-T22						Not Qualified	4096 bit				NOT SPECIFIED	NOT SPECIFIED				300 ns
TMS45169-70DZ	Texas Instruments	EDO DRAM	COMMERCIAL	40	SOJ	512	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	J BEND		160 mA	262144 words		YES	COMMON	5	5	16	SMALL OUTLINE	SOJ40,.44	DRAMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel		DUAL		R-PDSO-J40						Not Qualified	4194304 bit				NOT SPECIFIED	NOT SPECIFIED	.001 Amp			70 ns
MT16HTF51264HZ-800C1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	70 Cel	3-STATE	512MX64	512M	0 Cel	GOLD	ZIG-ZAG	1	R-XZMA-N200		1.9 V	30.15 mm	400 MHz	3.8 mm	Not Qualified	34359738368 bit	1.7 V	AUTO/SELF REFRESH; WD-MAX	e4					67.6 mm	.4 ns
IS42S16800F-5TLI	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	130 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX16	8M	-40 Cel		DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH				.002 Amp	1,2,4,8	22.22 mm	5 ns
IS42S16800F-6TL	Integrated Silicon Solution	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	GULL WING	SYNCHRONOUS	120 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	8MX16	8M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e3	30	260	.002 Amp	1,2,4,8	22.22 mm	5.4 ns
MT16HTF25664HIZ-667H1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	3440 mA	268435456 words		YES	COMMON	1.8	1.8	64	MICROELECTRONIC ASSEMBLY	DIMM200,24	DRAMs	.6 mm	85 Cel	3-STATE	256MX64	256M	-40 Cel	Gold (Au)	ZIG-ZAG	1	R-XZMA-N200		1.9 V	30.15 mm	333 MHz	3.8 mm	Not Qualified	17179869184 bit	1.7 V	SELF REFRESH; WD-MAX	e4			.112 Amp		67.6 mm
MT41K512M8RH-125:E	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	220 mA	536870912 words	8	YES	COMMON	1.35	1.35	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	95 Cel	3-STATE	512MX8	512M	0 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	1	R-PBGA-B78	3	1.45 V	1.2 mm	800 MHz	9 mm	Not Qualified	4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260	.016 Amp	8	10.5 mm
MT41K256M16HA-125:E	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS	243 mA	268435456 words	8	YES	COMMON	1.35	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	95 Cel	3-STATE	256MX16	256M	0 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm	800 MHz	9 mm	Not Qualified	4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260	.016 Amp	8	14 mm
MT18VDDT12872AY-40BF1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	184	DIMM	8192	RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS	4095 mA	134217728 words		YES	COMMON	2.6	2.6	72	MICROELECTRONIC ASSEMBLY	DIMM184	DRAMs	1.27 mm	70 Cel	3-STATE	128MX72	128M	0 Cel	GOLD	DUAL	1	R-XDMA-N184		2.7 V	31.9 mm	200 MHz	4 mm	Not Qualified	9663676416 bit	2.5 V	AUTO/SELF REFRESH; WD-MAX	e4					133.35 mm	.7 ns
MT4JTF25664AZ-1G6E1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		268435456 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		256MX64	256M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.5 mm		2.7 mm		17179869184 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
UPD48288209AFF-E24-DW1-A	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words			COMMON	1.8	1.8,2.5	9	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm		3-STATE	32MX9	32M		TIN BISMUTH	BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH; IT ALSO REQUIRES AT 2.5V	e6				2,4,8	18.5 mm
UPD48288236AFF-E18-DW1-A	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words	2,4,8		COMMON		1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm		3-STATE	8MX36	8M		TIN BISMUTH	BOTTOM		R-PBGA-B144				533 MHz		Not Qualified	301989888 bit			e6
UPD48288236AFF-E33-DW1	Renesas Electronics	DDR1 DRAM		144	BGA		RECTANGULAR	PLASTIC/EPOXY		YES		CMOS	BALL			8388608 words	2,4,8		COMMON		1.8,2.5	36	GRID ARRAY	BGA144,12X18,40/32	DRAMs	.8 mm		3-STATE	8MX36	8M			BOTTOM		R-PBGA-B144				300 MHz		Not Qualified	301989888 bit
MT18JSF51272PKZ-1G4K1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS	NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY				70 Cel		512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240		1.575 V	30.15 mm		3.8 mm		38654705664 bit	1.425 V	AUTO/SELF REFRESH; WD-MAX						82 mm
MT47R128M8CF-25:H	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		134217728 words		YES		1.55		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX8	128M	0 Cel		BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm		8 mm		1073741824 bit	1.5 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			10 mm	.4 ns
MT47R256M4CF-25E:H	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	BALL	SYNCHRONOUS		268435456 words		YES		1.55		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX4	256M	0 Cel		BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm		8 mm		1073741824 bit	1.5 V	AUTO/SELF REFRESH						10 mm	.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.