RECTANGULAR DRAM 1,707

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT46V32M16CV-5BIT:J	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	230 mA	33554432 words	2,4,8	YES	COMMON	2.6	2.6	16	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	85 Cel	3-STATE	32MX16	32M	-40 Cel	Tin/Lead/Silver (Sn/Pb/Ag)	BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm	200 MHz	8 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH	e0	30	235	.005 Amp	2,4,8	12.5 mm	.7 ns
MT16JTF51264AZ-1G4M1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words		YES		1.5		64	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		512MX64	512M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.575 V	30.5 mm			Not Qualified	34359738368 bit	1.425 V	AUTO/SELF REFRESH	e4					133.35 mm
MT41K128M8JP-125:G	Micron Technology	DDR3L DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			128MX8	128M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		8 mm	Not Qualified	1073741824 bit	1.283 V	AUTO/SELF REFRESH	e1					11.5 mm
MT41K128M8JP-15E:G	Micron Technology	DDR3L DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	490 mA	134217728 words	8	YES	COMMON	1.35	1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm		3-STATE	128MX8	128M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm	667 MHz	8 mm	Not Qualified	1073741824 bit	1.283 V	AUTO/SELF REFRESH	e1				8	11.5 mm	.255 ns
MT41K256M4JP-125:G	Micron Technology	DDR3L DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			256MX4	256M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		8 mm		1073741824 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			11.5 mm
MT41K256M4JP-15E:G	Micron Technology	DDR3L DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	315 mA	268435456 words	8	YES	COMMON	1.35	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm		3-STATE	256MX4	256M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm	667 MHz	8 mm	Not Qualified	1073741824 bit	1.283 V	AUTO/SELF REFRESH	e1				8	11.5 mm	.255 ns
MT41K64M16JT-15E:G	Micron Technology	DDR3L DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	275 mA	67108864 words	8	YES	COMMON	1.35	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm		3-STATE	64MX16	64M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	667 MHz	8 mm	Not Qualified	1073741824 bit	1.283 V	AUTO/SELF REFRESH	e1			.012 Amp	8	14 mm	.255 ns
MT49H32M18CBM-18:B	Micron Technology	DDR DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words				1.8		18	GRID ARRAY, THIN PROFILE			1 mm			32MX18	32M		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH	e1	30	260			18.5 mm	15 ns
MT46V32M16TG-5BIT:J	Micron Technology	DDR1 DRAM	INDUSTRIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	230 mA	33554432 words	2,4,8	YES	COMMON	2.6	2.6	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	85 Cel	3-STATE	32MX16	32M	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH	e0	30	235	.005 Amp	2,4,8	22.22 mm	.7 ns
IS42S16320D-6BL	Integrated Silicon Solution	SYNCHRONOUS DRAM	COMMERCIAL	54	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	250 mA	33554432 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX16	32M	0 Cel		BOTTOM	1	R-PBGA-B54		3.6 V	1.2 mm	166 MHz	8 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH				.004 Amp	1,2,4,8	13 mm	5.4 ns
IS42S16320D-7BLI	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	220 mA	33554432 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54	3	3.6 V	1.2 mm	143 MHz	8 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e1	30	260	.004 Amp	1,2,4,8	13 mm	5.4 ns
IS42S32160D-7BLI	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	90	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	300 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX32	16M	-40 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.2 mm	143 MHz	8 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH				.004 Amp	1,2,4,8	13 mm	5.4 ns
IS42S32800G-7BLI	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	90	TFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	270 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	8MX32	8M	-40 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.2 mm	143 MHz	8 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH				.003 Amp	1,2,4,8	13 mm	5.4 ns
IS42S86400D-7TLI	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	220 mA	67108864 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G54	3	3.6 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH	e3	30	260	.004 Amp	1,2,4,8	22.22 mm	5.4 ns
IS42S86400D-7TL	Integrated Silicon Solution	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	220 mA	67108864 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	64MX8	64M	0 Cel		DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	536870912 bit	3 V	AUTO/SELF REFRESH				.004 Amp	1,2,4,8	22.22 mm	5.4 ns
UPD48576209FF-E33-DW1-A	Renesas Electronics	DDR1 DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	716 mA	67108864 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	9	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	64MX9	64M			BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	300 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH				.055 Amp		18.5 mm	.35 ns
UPD48576218FF-E18-DW1-A	Renesas Electronics	DDR1 DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	1078 mA	33554432 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	32MX18	32M			BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	533 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH				.055 Amp		18.5 mm	.22 ns
UPD48576218FF-E33-DW1-A	Renesas Electronics	DDR1 DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	716 mA	33554432 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	32MX18	32M			BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	300 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH				.055 Amp		18.5 mm	.35 ns
UPD48576236FF-E18-DW1-A	Renesas Electronics	DDR1 DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	1105 mA	16777216 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	36	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	16MX36	16M			BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	533 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH				.055 Amp		18.5 mm	.22 ns
MT41J512M4HX-15E:D	Micron Technology	DDR3 DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	385 mA	536870912 words	8	YES	COMMON	1.5	1.5	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX4	512M	0 Cel		BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm	667 MHz	9 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.012 Amp	8	11.5 mm	.255 ns
MT18KDF1G72PDZ-1G4D1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		1GX72	1G	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.45 V	18.9 mm				77309411328 bit	1.283 V	AUTO/SELF REFRESH	e4					133.35 mm
MT46H16M16LFBF-6AT:H	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	60	BGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	85 mA	16777216 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY	BGA60,9X10,32	DRAMs	.8 mm	105 Cel	3-STATE	16MX16	16M	-40 Cel		BOTTOM	1	R-PBGA-B60		1.95 V		166 MHz		Not Qualified	268435456 bit	1.7 V	AUTO/SELF REFRESH				.00001 Amp	2,4,8,16		5 ns
MT46H8M16LFBF-6AT:K	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	60	BGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	90 mA	8388608 words	2,4,8,16	YES	COMMON	1.8	1.8	16	GRID ARRAY	BGA60,9X10,32	DRAMs	.8 mm	105 Cel	3-STATE	8MX16	8M	-40 Cel		BOTTOM	1	R-PBGA-B60		1.95 V		166 MHz		Not Qualified	134217728 bit	1.7 V	AUTO/SELF REFRESH				.00001 Amp	2,4,8,16		5 ns
MT47H32M16HR-25EAAT:G	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	215 mA	33554432 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	105 Cel	3-STATE	32MX16	32M	-40 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.007 Amp	4,8	12.5 mm	.45 ns
MT47H32M16HR-25EAIT:G	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	215 mA	33554432 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	32MX16	32M	-40 Cel		BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.007 Amp	4,8	12.5 mm	.45 ns
MT47H64M8CF-25EAIT:G	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	150 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel		BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	400 MHz	8 mm	Not Qualified	536870912 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.007 Amp	4,8	10 mm	.45 ns
MT8KTF25664AZ-1G4M1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		268435456 words		YES		1.35		64	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		256MX64	256M	0 Cel	GOLD	DUAL	1	R-XDMA-N240		1.45 V	30.5 mm				17179869184 bit	1.283 V	AUTO/SELF REFRESH	e4					133.35 mm
UPD48576218FF-E24-DW1	Renesas Electronics	DDR1 DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	872 mA	33554432 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	32MX18	32M			BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	400 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH				.055 Amp		18.5 mm	.3 ns
UPD48576236FF-E24-DW1	Renesas Electronics	DDR1 DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	891 mA	16777216 words	2,4,8		COMMON	1.8	1.5/1.8,1.8,2.5	36	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm		3-STATE	16MX36	16M			BOTTOM	1	R-PBGA-B144		1.9 V	1.17 mm	400 MHz	11 mm	Not Qualified	603979776 bit	1.7 V	AUTO REFRESH		NOT SPECIFIED	NOT SPECIFIED	.055 Amp		18.5 mm	.3 ns
MT48LC16M16A2P-7EIT:G	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	150 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e3	30	260	.0025 Amp	1,2,4,8	22.22 mm	5.4 ns
MT41J256M16RE-15EIT:D	Micron Technology	DDR3 DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	285 mA	268435456 words	8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX16	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm	667 MHz	10 mm	Not Qualified	4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1			.02 Amp	8	14 mm	.255 ns
W9825G2JB-6I	Winbond Electronics	SYNCHRONOUS DRAM	INDUSTRIAL	90	TFBGA	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	150 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3/3.3	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA90,9X15,32	DRAMs	.8 mm	85 Cel		8MX32	8M	-40 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1.2 mm	166 MHz	8 mm	Not Qualified	268435456 bit	2.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.004 Amp	1,2,4,8	13 mm	5 ns
MT41J128M16HA-15EAAT:D	Micron Technology	DDR3 DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	425 mA	134217728 words	8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm	667 MHz	9 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1			.012 Amp	8	14 mm	.255 ns
MT41J128M16HA-15EAIT:D	Micron Technology	DDR3 DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	425 mA	134217728 words	8	YES	COMMON	1.5	1.5	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	128MX16	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.575 V	1.2 mm	667 MHz	9 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1			.012 Amp	8	14 mm	.255 ns
MT41J256M8HX-15EAAT:D	Micron Technology	DDR3 DRAM	INDUSTRIAL	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	385 mA	268435456 words	8	YES	COMMON	1.5	1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm	667 MHz	9 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1	30	260	.012 Amp	8	11.5 mm	.255 ns
MT41J256M8HX-15EAIT:D	Micron Technology	DDR3 DRAM	INDUSTRIAL	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	385 mA	268435456 words	8	YES	COMMON	1.5	1.5	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	85 Cel	3-STATE	256MX8	256M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.575 V	1.2 mm	667 MHz	9 mm	Not Qualified	2147483648 bit	1.425 V	AUTO/SELF REFRESH	e1			.012 Amp	8	11.5 mm	.225 ns
MT41K256M8DA-125:M	Micron Technology	DDR3L DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	220 mA	268435456 words	8	YES	COMMON	1.35	1.35	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm		3-STATE	256MX8	256M		TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1	1.45 V	1.2 mm	800 MHz	8 mm	Not Qualified	2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1			.012 Amp	8	10.5 mm	.225 ns
MT41K256M8DA-15E:M	Micron Technology	DDR3L DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	205 mA	268435456 words	8	YES	COMMON	1.35	1.35	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm		3-STATE	256MX8	256M		MATTE TIN	BOTTOM	1	R-PBGA-B78	1	1.45 V	1.2 mm	667 MHz	8 mm	Not Qualified	2147483648 bit	1.283 V	AUTO/SELF REFRESH	e3			.012 Amp	8	10.5 mm	.255 ns
MT41K512M4DA-125:K	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	156 mA	536870912 words	8	YES	COMMON	1.35	1.35	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	95 Cel	3-STATE	512MX4	512M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm	800 MHz	8 mm	Not Qualified	2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1			.012 Amp	8	10.5 mm	.225 ns
MT41K512M4DA-125:M	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	220 mA	536870912 words	8	YES	COMMON	1.35	1.35	4	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	95 Cel	3-STATE	512MX4	512M	0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1	1.45 V	1.2 mm	800 MHz	8 mm	Not Qualified	2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1			.012 Amp	8	10.5 mm	.225 ns
MT46V32M16CV-5B:J	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	230 mA	33554432 words	2,4,8	YES	COMMON	2.6	2.6	16	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel	3-STATE	32MX16	32M	0 Cel	TIN LEAD SILVER	BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm	200 MHz	8 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH	e0			.005 Amp	2,4,8	12.5 mm	.7 ns
MT46V128M4P-5B:J	Micron Technology	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	230 mA	134217728 words	2,4,8	YES	COMMON	2.6	2.6	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	128MX4	128M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH	e3			.005 Amp	2,4,8	22.22 mm	.7 ns
MT46V32M16CY-5B:J	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	230 mA	33554432 words	2,4,8	YES	COMMON	2.6	2.6	16	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel	3-STATE	32MX16	32M	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm	200 MHz	8 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH	e1	30	260	.005 Amp	2,4,8	12.5 mm	.7 ns
MT46V32M16CY-5BLIT:J	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	230 mA	33554432 words	2,4,8	YES	COMMON	2.6	2.6	16	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	85 Cel	3-STATE	32MX16	32M	-40 Cel		BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm	200 MHz	8 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH				.005 Amp	2,4,8	12.5 mm	.7 ns
MT46V32M16P-5BL:J	Micron Technology	DDR1 DRAM	COMMERCIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	230 mA	33554432 words	2,4,8	YES	COMMON	2.6	2.6	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	70 Cel	3-STATE	32MX16	32M	0 Cel	MATTE TIN	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH	e3			.005 Amp	2,4,8	22.22 mm	.7 ns
MT46V32M16TG-5B:J	Micron Technology	DDR1 DRAM	INDUSTRIAL	66	TSSOP	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	230 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.6	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP66,.46	DRAMs	.65 mm	85 Cel	3-STATE	32MX16	32M	-40 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH				.005 Amp	2,4,8	22.22 mm	.7 ns
MT46V64M8CV-5B:J	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	230 mA	67108864 words	2,4,8	YES	COMMON	2.6	2.6	8	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	70 Cel	3-STATE	64MX8	64M	0 Cel		BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm	200 MHz	8 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH				.005 Amp	2,4,8	12.5 mm	.7 ns
MT46V64M8CV-5BIT:J	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	230 mA	67108864 words	2,4,8	YES	COMMON	2.6	2.6	8	GRID ARRAY, THIN PROFILE	BGA60,9X12,40/32	DRAMs	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel		BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm	200 MHz	8 mm	Not Qualified	536870912 bit	2.5 V	AUTO/SELF REFRESH				.005 Amp	2,4,8	12.5 mm	.7 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.