INDUSTRIAL DRAM 537

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT46H64M16LFCK-5IT:ATR	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	60	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.8 mm	85 Cel		64MX16	64M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.95 V	1 mm		10 mm	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1					11.5 mm	5 ns
MT46H64M32L2JG-6IT:ATR	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm	85 Cel		64MX32	64M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.95 V	.9 mm		12 mm	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	6 ns
MT47H16M16BG-3IT:BTR	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		16MX16	16M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		8 mm	268435456 bit	1.7 V	AUTO/SELF REFRESH	e1					14 mm	.45 ns
MT47H64M16HR-3IT:GTR	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		64MX16	64M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		8 mm	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1					12.5 mm	.45 ns
MT48LC16M16A2P-7EIT:DTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		16777216 words		YES		3.3	16	SMALL OUTLINE, THIN PROFILE		.8 mm	85 Cel		16MX16	16M		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	268435456 bit	3 V	AUTO/SELF REFRESH	e3					22.22 mm	5.4 ns
MT46H32M32LFMA-5IT:BTR	Micron Technology	DDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm	85 Cel		32MX32	32M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.95 V	.7 mm		12 mm	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT46H64M16LFBF-6IT:BTR	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.8 mm	85 Cel		64MX16	64M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.95 V	1 mm		8 mm	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1					9 mm	5 ns
MT46H64M32LFCX-6IT:BTR	Micron Technology	DDR1 DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.8 mm	85 Cel		64MX32	64M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		9 mm	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	5 ns
MT46V16M16P-6TIT:KTR	Micron Technology	DDR1 DRAM	INDUSTRIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		16777216 words		YES		2.5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		.65 mm	85 Cel		16MX16	16M		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm	268435456 bit	2.3 V	AUTO/SELF REFRESH	e3					22.22 mm	.7 ns
MT47H32M16HR-25EIT:GTR	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		32MX16	32M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		8 mm	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					12.5 mm	.4 ns
MT47H64M8CF-25EIT:GTR	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		64MX8	64M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm		8 mm	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					10 mm	.4 ns
MT48LC4M16A2P-7EIT:JTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		4194304 words		YES		3.3	16	SMALL OUTLINE, THIN PROFILE		.8 mm	85 Cel		4MX16	4M		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	67108864 bit	3 V	AUTO/SELF REFRESH	e3					22.22 mm	5.4 ns
MT48LC4M32B2P-7IT:GTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	86	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		4194304 words		YES		3.3	32	SMALL OUTLINE, THIN PROFILE		.5 mm	85 Cel		4MX32	4M		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G86		3.6 V	1.2 mm		10.16 mm	134217728 bit	3 V	AUTO/SELF REFRESH	e3					22.22 mm	5.5 ns
MT46H128M32L2KQ-48IT:CTR	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.5 mm	85 Cel		128MX32	128M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.95 V	.75 mm		12 mm	4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT46H64M32LFCM-6IT:ATR	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.8 mm	85 Cel		64MX32	64M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		10 mm	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	5 ns
MT47H64M16HR-25EXIT:HTR	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	BGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	ASYNCHRONOUS		67108864 words		YES		1.8	16	GRID ARRAY			85 Cel		64MX16	64M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V				1073741824 bit	1.7 V	SELF REFRESH	e1
MT48H16M32LFB5-75IT:CTR	Micron Technology	DDR DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.8 mm	85 Cel		16MX32	16M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B90		1.95 V	1 mm		8 mm	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					13 mm	5.4 ns
MT48H32M16LFBF-75IT:BTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.8 mm	85 Cel		32MX16	32M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B54		1.95 V	1 mm		8 mm	536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					9 mm	5.4 ns
MT48LC8M16A2P-7EIT:LTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		8388608 words		YES		3.3	16	SMALL OUTLINE, THIN PROFILE		.8 mm	85 Cel		8MX16	8M		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	134217728 bit	3 V	AUTO/SELF REFRESH	e3					22.22 mm	5.4 ns
MT47H128M8CF-25EIT:HTR	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		128MX8	128M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm		8 mm	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1					10 mm	.4 ns
MT47H64M16HR-25IT:HTR	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		64MX16	64M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		8 mm	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1					12.5 mm	.4 ns
MT48LC4M32B2P-6AXIT:LTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	86	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	GULL WING	SYNCHRONOUS		4194304 words		YES		3.3	32	SMALL OUTLINE, THIN PROFILE		.5 mm	85 Cel		4MX32	4M		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G86		3.6 V	1.2 mm		10.16 mm	134217728 bit	3 V	AUTO/SELF REFRESH	e3					22.22 mm	5.4 ns
EDB1316BDBH-1DIT-F-D	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm	85 Cel		64MX16	64M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B134		1.3 V	1 mm		10 mm	1073741824 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	e1					11.5 mm
EDB1332BDBH-1DIT-F-D	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm	85 Cel		32MX32	32M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B134		1.3 V	1 mm		10 mm	1073741824 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	e1	30	260			11.5 mm
EDB2432B4MA-1DIT-F-D	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.2	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm	85 Cel		64MX32	64M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B134		1.3 V	1 mm		10 mm	2147483648 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	e1	30	260			11.5 mm
EDB4416BBBH-1DIT-F-D	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm	85 Cel		256MX16	256M		-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	.75 mm		10 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY						11.5 mm
EDB4416BBBH-1DIT-F-RTR	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm	85 Cel		256MX16	256M		-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	.75 mm		10 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY						11.5 mm
EDB4416BBBH-1DIT-F-R	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm	85 Cel		256MX16	256M		-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	.75 mm		10 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY						11.5 mm
EDB1316BDBH-1DAAT-F-RTR	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm	105 Cel		64MX16	64M		-40 Cel		BOTTOM	1	R-PBGA-B134		1.95 V	1 mm		10 mm	1073741824 bit	1.7 V	SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
EDB2432B4MA-1DAAT-F-RTR	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.65 mm	105 Cel		32MX32	32M		-40 Cel		BOTTOM	1	R-PBGA-B134		1.95 V	1 mm		10 mm	1073741824 bit	1.7 V	SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
MTA18ASF2G72PKTZ-2G6B1	Micron Technology	DDR4 DRAM MODULE	INDUSTRIAL	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY		.5 mm	85 Cel		2GX72	2G		-40 Cel		DUAL	1	R-XDMA-N288		1.26 V	30.15 mm		4 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						80 mm
MT40A1G8WE-075EIT:B	Micron Technology	DDR4 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		1GX8	1G		-40 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		8 mm	8589934592 bit	1.14 V	AUTO/SELF REFRESH						12 mm
MT40A256M16GE-083EAAT:B	Micron Technology	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	71 mA	268435456 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	105 Cel	3-STATE	256MX16	256M	1.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		9 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.059 Amp	8	14 mm
MT40A256M16GE-083EAIT:B	Micron Technology	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	69 mA	268435456 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	3-STATE	256MX16	256M	1.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		9 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.057 Amp	8	14 mm
MT40A512M8RH-083EAAT:B	Micron Technology	DDR4 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	58 mA	536870912 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	105 Cel	3-STATE	512MX8	512M	1.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		9 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.059 Amp	8	10.5 mm
MT40A512M8RH-083EAIT:B	Micron Technology	DDR4 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	56 mA	536870912 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel	3-STATE	512MX8	512M	1.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		9 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.057 Amp	8	10.5 mm
MT41K512M16HA-125AIT:ATR	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words		YES		1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		512MX16	512M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		9 mm	8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			14 mm
AS4C256M16D3A-12BIN	Alliance Memory	DDR3 DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.5	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.8 mm	85 Cel		256MX16	256M		-40 Cel		BOTTOM	1	R-PBGA-B96	3	1.575 V	1 mm		9 mm	4294967296 bit	1.425 V	AUTO/SELF REFRESH						13 mm
MT48LC16M16A2P-6AXIT:G	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	100 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	.8 mm	85 Cel	3-STATE	16MX16	16M		-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	167 MHz	10.16 mm	268435456 bit	3 V	AUTO/SELF REFRESH	e3	30	260	.0025 Amp	1,2,4,8	22.22 mm	5.4 ns
MTA9ASF1G72PKIZ-3G2E1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			85 Cel		1GX72	1G		-40 Cel		DUAL	1	R-XDMA-N288		1.26 V	30.15 mm		4 mm	77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						80 mm
AS4C64M16D2A-25BCN	Alliance Memory	DDR2 DRAM	INDUSTRIAL	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		64MX16	64M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84	3	1.9 V	1.2 mm		8 mm	1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	20	265			12.5 mm
MT41K64M16TW-107XIT:J	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		67108864 words		YES		1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	85 Cel		64MX16	64M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		8 mm	1073741824 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			14 mm
W631GU6MB12I	Winbond Electronics	DDR3L DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.35	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		.8 mm	95 Cel		64MX16	64M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1 mm		7.5 mm	1073741824 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm
MT16HTF25664HIZ-667M1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		268435456 words		YES		1.8	64	MICROELECTRONIC ASSEMBLY			85 Cel		256MX64	256M		-40 Cel		ZIG-ZAG	1	R-XZMA-N200		1.9 V	30.15 mm		3.8 mm	17179869184 bit	1.7 V	SELF REFRESH; WD-MAX						67.6 mm
MT46V16M16P-5BIT:MTR	Micron Technology	DDR1 DRAM	INDUSTRIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		16777216 words		YES		2.6	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		.65 mm	85 Cel		16MX16	16M		-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm	268435456 bit	2.5 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	.7 ns
MT41K256M8DA-107AIT:K	Micron Technology	DDR3L DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words		YES		1.35	8	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	95 Cel		256MX8	256M		-40 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		8 mm	2147483648 bit	1.283 V	AUTO/SELF REFRESH						10.5 mm
MT61M256M32JE-12NIT:A	Micron Technology	SYNCHRONOUS GRAPHICS RAM MODULE	INDUSTRIAL	180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.25	32	GRID ARRAY, THIN PROFILE, FINE PITCH		.75 mm	95 Cel		256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B180		1.2875 V	1.2 mm		12 mm	8589934592 bit	1.2125 V	AUTO/SELF REFRESH		30	260			14 mm
AS4C64M16D3LB-12BINTR	Alliance Memory	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	95 Cel		64MX16	64M		-40 Cel		BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm		9 mm	1073741824 bit	1.283 V	AUTO/SELF REFRESH						13 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.