INDUSTRIAL DRAM 537

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
IS42S16160J-7TLI-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			16MX16	16M		-40 Cel		DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		268435456 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	5.4 ns
IS43LD32640B-18BLI-TR	Integrated Silicon Solution	LPDDR2 DRAM	INDUSTRIAL	134	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.2		32	GRID ARRAY, THIN PROFILE, FINE PITCH			.65 mm	85 Cel			64MX32	64M		-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	1.1 mm		10 mm		2147483648 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
IS43TR16512BL-125KBLI-TR	Integrated Silicon Solution	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	95 mA	536870912 words	4,8	YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,6X16,32		.8 mm	95 Cel			512MX16	512M	1.283 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm	800 MHz	10 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1	10	260	.055 Amp	4,8	14 mm
MT40A512M16LY-062EIT:E	Micron Technology	DDR4 DRAM	INDUSTRIAL	96	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	NO		512MX16	512M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.26 V	1.2 mm		7.5 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	13.5 mm
MT48LC4M16A2P-6AAIT:J	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		4194304 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			4MX16	4M		-40 Cel	Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		67108864 bit	3 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	5.5 ns
MT53B256M32D1DS-062AAT:C	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA	16384	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	410 mA	268435456 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	105 Cel			256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1600 MHz	10 mm		8589934592 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX				.0033 Amp	16,32	14.5 mm
MT41K512M16VRN-107AIT:P	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	304 mA	536870912 words	4,8	YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel			512MX16	512M	1.283 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm	934.57 MHz	8 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260	.022 Amp	4,8	14 mm
MT46V32M16BN-6IT:FTR	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		2.5		16	GRID ARRAY, THIN PROFILE			1 mm	85 Cel			32MX16	32M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm		10 mm		536870912 bit	2.3 V	AUTO/SELF REFRESH	e1	30	260			12.5 mm	.7 ns
MT40A256M16LY-062EIT:F	Micron Technology	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel			256MX16	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.26 V	1.2 mm		7.5 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260			13.5 mm
MT48LC8M16A2B4-6AXIT:L	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words		YES		3.3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel			8MX16	8M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B54		3.6 V	1 mm		8 mm		134217728 bit	3 V	AUTO/SELF REFRESH	e1	30	260			8 mm	5.4 ns
MT48LC8M16A2P-6AAAT:L	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	GULL WING	SYNCHRONOUS		8388608 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	105 Cel			8MX16	8M		-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		134217728 bit	3 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	5.4 ns
MT48LC8M16A2P-7EAIT:L	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	GULL WING	SYNCHRONOUS		8388608 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			8MX16	8M		-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		134217728 bit	3 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	5.4 ns
MT40A512M16JY-083EIT:BTR	Micron Technology	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel			512MX16	512M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		8 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT40A512M8SA-062EIT:F	Micron Technology	DDR4 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel			512MX8	512M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		7.5 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260			11 mm
MT41K512M8RH-125IT:ETR	Micron Technology	DDR3L DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel			512MX8	512M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1					10.5 mm
MT46V16M16TG-6TIT:FTR	Micron Technology	DDR1 DRAM	INDUSTRIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		16777216 words		YES		2.5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	85 Cel			16MX16	16M		-40 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm		268435456 bit	2.3 V	AUTO/SELF REFRESH	e0	30	235			22.22 mm	.7 ns
MT48LC16M16A2P-7EIT:GTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			16MX16	16M		-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		268435456 bit	3 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	5.4 ns
MT48LC4M16A2B4-75IT:GTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		4194304 words		YES		3.3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel			4MX16	4M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B54		3.6 V	1 mm		8 mm		67108864 bit	3 V	AUTO/SELF REFRESH	e1	30	260			8 mm	5.4 ns
MT41K512M16VRN-107IT:P	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel			512MX16	512M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		8 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1		260			14 mm
MT48LC16M16A2F4-6AIT:GTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words				3.3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel			16MX16	16M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54		3.6 V	1 mm		8 mm		268435456 bit	3 V	AUTO REFRESH	e1					8 mm	5.4 ns
MT53E768M32D4DT-046AAT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		805306368 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	105 Cel		3-STATE	768MX32	768M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.95 mm	2133 MHz	10 mm		25769803776 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX		NOT SPECIFIED	NOT SPECIFIED		16,32	14.5 mm
MT53E768M32D4DT-053AAT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		805306368 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	105 Cel		3-STATE	768MX32	768M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.95 mm	1866 MHz	10 mm		25769803776 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX		NOT SPECIFIED	NOT SPECIFIED		16,32	14.5 mm
MT40A512M16LY-062EAT:E	Micron Technology	DDR4 DRAM	INDUSTRIAL	96	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	105 Cel	NO		512MX16	512M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		7.5 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	13.5 mm
MT40A2G8VA-062EIT:BTR	Micron Technology	DDR4 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words		YES		1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel			2GX8	2G		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		10 mm		17179869184 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260			11 mm
MT40A512M8RH-083EAAT:BTR	Micron Technology	DDR4 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	8	YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	105 Cel		3-STATE	512MX8	512M	1.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1200.4 MHz	9 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	10.5 mm
MT49H16M18CSJ-25IT:BTR	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words				1.8		18	GRID ARRAY, THIN PROFILE			1 mm	85 Cel			16MX18	16M		-40 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm		301989888 bit	1.7 V	AUTO REFRESH; TERM PITCH-MAX		NOT SPECIFIED	NOT SPECIFIED			18.5 mm
MT49H16M36SJ-18IT:BTR	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words				1.8		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel			16MX36	16M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm		603979776 bit	1.7 V	AUTO REFRESH; TERM PITCH-MAX	e1	30	260			18.5 mm
MT49H8M36SJ-25IT:BTR	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words				1.8		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel			8MX36	8M		-40 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm		301989888 bit	1.7 V	AUTO REFRESH; TERM PITCH-MAX						18.5 mm
AS4C256M16D3B-12BINTR	Alliance Memory	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	55 mA	268435456 words	4,8	YES	COMMON	1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		3-STATE	256MX16	256M	1.425 V	-40 Cel		BOTTOM	1	R-PBGA-B96	3	1.575 V	1.2 mm	800 MHz	9 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH				.032 Amp	4,8	13.5 mm
AS4C512M16D3L-12BINTR	Alliance Memory	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	185 mA	536870912 words	4,8	YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		3-STATE	512MX16	512M	1.283 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm	800 MHz	9 mm		8589934592 bit	1.283 V		e1			.011 Amp	4,8	14 mm
IS42S16400J-6BLI-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	TFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	150 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,9X9,32	DRAMs	.8 mm	85 Cel		3-STATE	4MX16	4M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54		3.6 V	1.2 mm	166 MHz	8 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e1			.002 Amp	1,2,4,8	8 mm	5.4 ns
W9864G6JT-6ITR	Winbond Electronics	SYNCHRONOUS DRAM	INDUSTRIAL	54	TFBGA	4096	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		4194304 words	1,2,4,8,FP	YES	COMMON	3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,9X9,32		.8 mm	85 Cel		3-STATE	4MX16	4M	3 V	-40 Cel		BOTTOM	1	S-PBGA-B54		3.6 V	1.2 mm		8 mm		67108864 bit	3 V	AUTO/SELF REFRESH				.002 Amp	1,2,4,8	8 mm	5 ns
AS4C32M16SB-7BINTR	Alliance Memory	SYNCHRONOUS DRAM	INDUSTRIAL	54	TFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	120 mA	33554432 words	1,2,4,8,FP	YES	COMMON/SEPARATE	3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,9X9,32		.8 mm	85 Cel		3-STATE	32MX16	32M	3 V	-40 Cel		BOTTOM	1	S-PBGA-B54		3.6 V	1.2 mm	143 MHz	8 mm		536870912 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.008 Amp	1,2,4,8	8 mm	5.4 ns
AS4C32M16SB-7BIN	Alliance Memory	SYNCHRONOUS DRAM	INDUSTRIAL	54	TFBGA	8192	SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	120 mA	33554432 words	1,2,4,8,FP	YES	COMMON/SEPARATE	3.3		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,9X9,32		.8 mm	85 Cel		3-STATE	32MX16	32M	3 V	-40 Cel		BOTTOM	1	S-PBGA-B54		3.6 V	1.2 mm	143 MHz	8 mm		536870912 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.008 Amp	1,2,4,8	8 mm	5.4 ns
MT53E768M32D4DT-053AIT:E	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		805306368 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	95 Cel		3-STATE	768MX32	768M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.95 mm	1866 MHz	10 mm		25769803776 bit	1.06 V	SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX		NOT SPECIFIED	NOT SPECIFIED		16,32	14.5 mm
IS43TR81024BL-107MBLI	Integrated Silicon Solution	DDR3L DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel			1GX8	1G		-40 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		10 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			14 mm
IS46TR16640CL-107MBLA2	Integrated Silicon Solution	DDR3 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	105 Cel			64MX16	64M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		9 mm		1073741824 bit	1.283 V	AUTO/SELF REFRESH						13 mm
IS43LQ16128A-062BLI	Integrated Silicon Solution	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words	16,32	NO	COMMON			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	95 Cel			128MX16	128M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.95 V	.85 mm	1600 MHz	10 mm		2147483648 bit	1.7 V	terminal pitch-max					16,32	14.5 mm
MT40A1G16RC-062EIT:B	Micron Technology	DDR4 DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel			1GX16	1G	1.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1600 MHz	10 mm		17179869184 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260		8	13 mm
MT53E512M32D2FW-046AAT:D	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	105 Cel			512MX32	512M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.1 mm	2136.7 MHz	10 mm		17179869184 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
MT53B128M32D1DS-062AAT:A	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		134217728 words		YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.65 mm	105 Cel			128MX32	128M	1.06 V	-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1600 MHz	10 mm		4294967296 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						14.5 mm
W631GG6NB09I	Winbond Electronics	DDR3 DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	270 mA	67108864 words	8	YES	COMMON	1.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		3-STATE	64MX16	64M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1 mm	1066 MHz	7.5 mm		1073741824 bit	1.425 V					.05 Amp	8	13 mm	20 ns
W631GG6NB12I	Winbond Electronics	DDR3 DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	220 mA	67108864 words	8	YES	COMMON	1.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		3-STATE	64MX16	64M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1 mm	800 MHz	7.5 mm		1073741824 bit	1.425 V					.04 Amp	8	13 mm	20 ns
W631GG6NB11I	Winbond Electronics	DDR3 DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	240 mA	67108864 words	8	YES	COMMON	1.5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		3-STATE	64MX16	64M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.575 V	1 mm	933 MHz	7.5 mm		1073741824 bit	1.425 V					.045 Amp	8	13 mm	20 ns
W631GU6NB09I	Winbond Electronics	DDR3L DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	270 mA	67108864 words	8	YES	COMMON	1.35		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		3-STATE	64MX16	64M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1 mm	1066 MHz	7.5 mm		1073741824 bit	1.283 V					.06 Amp	8	13 mm	20 ns
W631GU6NB11I	Winbond Electronics	DDR3L DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	240 mA	67108864 words	8	YES	COMMON	1.35		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		3-STATE	64MX16	64M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1 mm	933 MHz	7.5 mm		1073741824 bit	1.283 V					.055 Amp	8	13 mm	20 ns
W631GU6NB12I	Winbond Electronics	DDR3L DRAM	INDUSTRIAL	96	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	220 mA	67108864 words	8	YES	COMMON	1.35		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		3-STATE	64MX16	64M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1 mm	800 MHz	7.5 mm		1073741824 bit	1.283 V					.055 Amp	8	13 mm	20 ns
D2516ECMDXGJDI-U	Kingston Technology Company	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words	4,8	YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel			256MX16	256M		-40 Cel		BOTTOM	1	R-PBGA-B96			1.2 mm		7.5 mm		4294967296 bit		SELF REFRESH; BACKWARD COMPATIBLE TO 1.5V VDD					4,8	13.5 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.