INDUSTRIAL DRAM 537

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT47H64M8SH-25EAAT:H	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	150 mA	67108864 words	4,8	YES	COMMON	1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		.8 mm	105 Cel	3-STATE	64MX8	64M		-40 Cel		BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	400 MHz	8 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.01 Amp	4,8	10 mm
MT47H64M8SH-25EAIT:H	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	150 mA	67108864 words	4,8	YES	COMMON	1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		.8 mm	85 Cel	3-STATE	64MX8	64M		-40 Cel		BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	400 MHz	8 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.01 Amp	4,8	10 mm
MT41K1G8SN-107IT:A	Micron Technology	DDR3L DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		1GX8	1G		-40 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		9 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH						13.2 mm
MT41K1G8SN-125IT:A	Micron Technology	DDR3L DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		1GX8	1G		-40 Cel		BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm		9 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH						13.2 mm
MT41K512M16HA-107IT:A	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX16	512M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		9 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH						14 mm
MT41K512M16HA-125IT:A	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX16	512M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		9 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT48LC4M32B2P-6AXIT:L	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	86	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		4194304 words		YES		3.3		32	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		4MX32	4M		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G86		3.6 V	1.2 mm		10.16 mm		134217728 bit	3 V	AUTO/SELF REFRESH	e3					22.22 mm	5.4 ns
IS42VS16160J-75TLI	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		16777216 words		YES		1.8		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		16MX16	16M		-40 Cel		DUAL	1	R-PDSO-G54		1.9 V	1.2 mm		10.16 mm		268435456 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	5.4 ns
MT40A512M16HA-083EIT:A	Micron Technology	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX16	512M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		9 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			14 mm
MT48LC4M32B2B5-6AAIT:L	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		4194304 words		YES		3.3		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M		-40 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1 mm		8 mm		134217728 bit	3 V	AUTO/SELF REFRESH						13 mm	5.4 ns
MT48LC4M32B2P-6AAAT:L	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	86	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	GULL WING	SYNCHRONOUS		4194304 words		YES		3.3		32	SMALL OUTLINE, THIN PROFILE			.5 mm	105 Cel		4MX32	4M		-40 Cel		DUAL	1	R-PDSO-G86		3.6 V	1.2 mm		10.16 mm		134217728 bit	3 V	AUTO/SELF REFRESH						22.22 mm	5.4 ns
MT48LC4M32B2P-6AAIT:L	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	86	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	GULL WING	SYNCHRONOUS		4194304 words		YES		3.3		32	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		4MX32	4M		-40 Cel		DUAL	1	R-PDSO-G86		3.6 V	1.2 mm		10.16 mm		134217728 bit	3 V	AUTO/SELF REFRESH						22.22 mm	5.4 ns
MT41K512M16HA-125AIT:A	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX16	512M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		9 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT49H16M18CSJ-25IT:B	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	655 mA	16777216 words			SEPARATE	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	16MX18	16M		-40 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH				.005 Amp	2,4,8	18.5 mm	.3 ns
MT49H16M18SJ-25IT:B	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words				1.8		18	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		16MX18	16M		-40 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm		301989888 bit	1.7 V	AUTO REFRESH						18.5 mm
MT49H16M36SJ-18IT:B	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words				1.8		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		16MX36	16M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm		603979776 bit	1.7 V	AUTO REFRESH	e1	30	260			18.5 mm
MT49H16M36SJ-25IT:B	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words				1.8		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		16MX36	16M		-40 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm		603979776 bit	1.7 V	AUTO REFRESH						18.5 mm
MT49H32M18CSJ-25EIT:B	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words				1.8		18	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		32MX18	32M		-40 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm		603979776 bit	1.7 V	AUTO REFRESH						18.5 mm
AS4C512M16D3L-12BIN	Alliance Memory	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	220 mA	536870912 words	8	YES	COMMON	1.35	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel	3-STATE	512MX16	512M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm	800 MHz	9 mm	Not Qualified	8589934592 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY	e1			.011 Amp	8	14 mm	.225 ns
W9812G6KH-5I	Winbond Electronics	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		8388608 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		8MX16	8M		-40 Cel		DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		134217728 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	4.5 ns
MT46V32M16P-5BXIT:J	Micron Technology	DDR1 DRAM	INDUSTRIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		33554432 words		YES		2.6		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	85 Cel		32MX16	32M		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm		536870912 bit	2.5 V	AUTO/SELF REFRESH	e3					22.22 mm	.7 ns
MT48LC16M16A2P-6AAAT:G	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	105 Cel		16MX16	16M		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		268435456 bit	3 V	AUTO/SELF REFRESH	e3					22.22 mm	5.4 ns
EDB5432BEBH-1DIT-F-D	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		16MX32	16M		-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	1 mm		10 mm		536870912 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
EDB5432BEPA-1DIT-F-D	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		16MX32	16M		-40 Cel		BOTTOM	1	S-PBGA-B168		1.3 V	.8 mm		12 mm		536870912 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						12 mm
EDB5432BEPA-1DIT-F-R	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		16MX32	16M		-40 Cel		BOTTOM	1	S-PBGA-B168		1.3 V	.8 mm		12 mm		536870912 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						12 mm
IS42S16400J-6TLI-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	150 mA	4194304 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G54	3	3.6 V	1.2 mm	166 MHz	10.16 mm	Not Qualified	67108864 bit	3 V	AUTO/SELF REFRESH	e3			.002 Amp	1,2,4,8	22.22 mm	5.4 ns
MT49H8M36SJ-25IT:B	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words				1.8		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		8MX36	8M		-40 Cel		BOTTOM	1	R-PBGA-B144		1.9 V	1.2 mm		11 mm		301989888 bit	1.7 V	AUTO REFRESH						18.5 mm
MT40A256M16GE-062EIT:B	Micron Technology	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX16	256M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		9 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			14 mm
MT40A256M16GE-075EIT:B	Micron Technology	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX16	256M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		9 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT40A512M8RH-075EIT:B	Micron Technology	DDR4 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX8	512M		-40 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		9 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH						10.5 mm
EDB4432BBBJ-1DAIT-F-D	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		128MX32	128M		-40 Cel		BOTTOM	1	R-PBGA-B134		1.3 V	.75 mm		10 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
MT41K512M8DA-107AIT:P	Micron Technology	DDR3L DRAM	INDUSTRIAL	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	146 mA	536870912 words	8	YES	COMMON	1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel	3-STATE	512MX8	512M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm	934.57 MHz	8 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY	e1	30	260	.011 Amp	8	10.5 mm
MT48LC2M32B2B5-7ITGTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2097152 words		YES		3.3		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX32	2M		-40 Cel		BOTTOM	1	R-PBGA-B90		3.6 V	1 mm		8 mm		67108864 bit	3 V	AUTO/SELF REFRESH						13 mm	5.5 ns
MT47H128M16RT-25EXIT:C	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		128MX16	128M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		9 mm		2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260			12.5 mm	.4 ns
IS43LD16640C-25BLI	Integrated Silicon Solution	LPDDR2 DRAM	INDUSTRIAL	134	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.65 mm	85 Cel		64MX16	64M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B134		1.3 V	1.1 mm		10 mm		1073741824 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM	e1	10	260			11.5 mm
EDB8164B4PT-1DIT-F-D	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	216	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.2		64	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.4 mm	85 Cel		128MX64	128M		-40 Cel		BOTTOM	1	S-PBGA-B216		1.95 V	.8 mm		12 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						12 mm
MT47H64M16HR-3IT:HTR	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX16	64M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B84		1.9 V	1.2 mm		8 mm		1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260			12.5 mm	.45 ns
MT46V32M16P-5BAIT:J	Micron Technology	DDR1 DRAM	INDUSTRIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		33554432 words		YES		2.6		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	85 Cel		32MX16	32M		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm		536870912 bit	2.5 V	AUTO/SELF REFRESH	e3					22.22 mm	.7 ns
MT40A256M16GE-075EAIT:B	Micron Technology	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	72 mA	268435456 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel	3-STATE	256MX16	256M	1.14 V	-40 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		9 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH				.058 Amp	8	14 mm
MT40A512M8RH-075EAAT:B	Micron Technology	DDR4 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	61 mA	536870912 words	8	YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	105 Cel	3-STATE	512MX8	512M	1.14 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		9 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.06 Amp	8	10.5 mm
MT40A512M8RH-075EAIT:B	Micron Technology	DDR4 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	59 mA	536870912 words	8	YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel	3-STATE	512MX8	512M	1.14 V	-40 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		9 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.058 Amp	8	10.5 mm
MT42L32M16D1FE-25IT:A	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	121	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.2		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		32MX16	32M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B121		1.3 V	.8 mm		6.5 mm		536870912 bit	1.14 V	SELF REFRESH	e1					8 mm
MT46H32M16LFBF-6IT:CTR	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		YES		1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		32MX16	32M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.95 V	1 mm		8 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH	e1					9 mm	5 ns
MT46H128M32L2KQ-5IT:BTR	Micron Technology	DDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		128MX32	128M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168		1.95 V	.75 mm		12 mm		4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT46V16M16CY-6IT:KTR	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		2.5		16	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		16MX16	16M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		2.7 V	1.2 mm		8 mm		268435456 bit	2.3 V	AUTO/SELF REFRESH	e1					12.5 mm	.7 ns
MT48LC2M32B2TG-7IT:GTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	86	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		2097152 words		YES		3.3		32	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		2MX32	2M		-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G86		3.6 V	1.2 mm		10.16 mm		67108864 bit	3 V	AUTO/SELF REFRESH	e0					22.22 mm	5.5 ns
MT48LC8M16A2B4-75IT:GTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words		YES		3.3		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B54		3.6 V	1 mm		8 mm		134217728 bit	3 V	AUTO/SELF REFRESH	e1					8 mm	5.4 ns
MT48LC8M16A2P-7EIT:GTR	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		8388608 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel		8MX16	8M		-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		134217728 bit	3 V	AUTO/SELF REFRESH	e3					22.22 mm	5.4 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.