Micron Technology DRAM 1,751

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT46V64M8P-5BAIT:J	Micron Technology	DDR1 DRAM	INDUSTRIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		67108864 words		YES		2.6	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		.65 mm	85 Cel		64MX8	64M		-40 Cel		DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm	536870912 bit	2.5 V	AUTO/SELF REFRESH						22.22 mm	.7 ns
MTA9ADF1G72PKIZ-3G2E1	Micron Technology	DDR DRAM MODULE	INDUSTRIAL	288	DIMM		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			95 Cel		1GX72	1G		-40 Cel		DUAL	1	R-PDMA-N288	1.26 V	18.9 mm		4 mm	77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						80 mm
MTA16ATF2G64AZ-3G2J1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2	64	MICROELECTRONIC ASSEMBLY			95 Cel		2GX64	2G	1.14 V	0 Cel		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1612 MHz	3.9 mm	137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED		8	133.35 mm
MTA16ATF2G64HZ-3G2J1	Micron Technology	DDR4 DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2	64	MICROELECTRONIC ASSEMBLY			95 Cel		2GX64	2G		0 Cel		DUAL	1	R-XDMA-N260	1.26 V	30.13 mm		3.7 mm	137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						69.6 mm
MTA4ATF51264AZ-3G2J1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words	4,8	YES	COMMON	1.2	64	MICROELECTRONIC ASSEMBLY	DIMM288,24	.6 mm	95 Cel		512MX64	512M	1.14 V	0 Cel		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1612.903 MHz	2.7 mm	34359738368 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED		4,8	133.35 mm
MTA4ATF51264HZ-3G2J1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words		YES		1.2	64	MICROELECTRONIC ASSEMBLY			95 Cel		512MX64	512M		0 Cel		DUAL	1	R-XDMA-N260	1.26 V	30.13 mm		2.5 mm	34359738368 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						69.6 mm
MT41K256M16TW-107AT:P	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH		.8 mm	105 Cel		256MX16	256M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96	1.45 V	1.2 mm		8 mm	4294967296 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MTA8ATF1G64HZ-3G2J1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	64	MICROELECTRONIC ASSEMBLY			95 Cel		1GX64	1G		0 Cel		DUAL	1	R-XDMA-N260	1.26 V	30.13 mm		3.7 mm	68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						69.6 mm
MT44K32M36RB-107EIT:A	Micron Technology	DDR DRAM	INDUSTRIAL	168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words				1.35	36	GRID ARRAY, THIN PROFILE		1 mm	95 Cel		32MX36	32M		-40 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm	1207959552 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K16M36RB-093EIT:B	Micron Technology	DDR DRAM	INDUSTRIAL	168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words				1.35	36	GRID ARRAY, THIN PROFILE		1 mm	95 Cel		16MX36	16M		-40 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm	603979776 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K16M36RB-093F:B	Micron Technology	DDR DRAM	OTHER	168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words				1.35	36	GRID ARRAY, THIN PROFILE		1 mm	95 Cel		16MX36	16M		0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm	603979776 bit	1.28 V	AUTO REFRESH	e1	30	260			13.5 mm
MT44K16M36RB-107E:B	Micron Technology	DDR DRAM	OTHER	168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words				1.35	36	GRID ARRAY, THIN PROFILE		1 mm	95 Cel		16MX36	16M		0 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm	603979776 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K16M36RB-107EIT:B	Micron Technology	DDR DRAM	INDUSTRIAL	168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words				1.35	36	GRID ARRAY, THIN PROFILE		1 mm	95 Cel		16MX36	16M		-40 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm	603979776 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K32M18RB-093E:B	Micron Technology	DDR DRAM	OTHER	168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words				1.35	18	GRID ARRAY, THIN PROFILE		1 mm	95 Cel		32MX18	32M		0 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm	603979776 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K32M18RB-093F:B	Micron Technology	DDR DRAM	OTHER	168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words				1.35	18	GRID ARRAY, THIN PROFILE		1 mm	95 Cel		32MX18	32M		0 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm	603979776 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K32M18RB-107E:B	Micron Technology	DDR DRAM	OTHER	168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words				1.35	18	GRID ARRAY, THIN PROFILE		1 mm	95 Cel		32MX18	32M		0 Cel		BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm	603979776 bit	1.28 V	AUTO REFRESH						13.5 mm
MT41K512M16VRN-107AAT:P	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	304 mA	536870912 words		YES	COMMON	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	105 Cel		512MX16	512M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.45 V	1.2 mm	934.57 MHz	8 mm	8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260	.022 Amp		14 mm
MT61K512M32KPA-16:B	Micron Technology	GDDR6 DRAM		180	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES	COMMON	1.25	32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA180,14X18,30	.75 mm	95 Cel		512MX32	512M		0 Cel		BOTTOM	1	R-PBGA-B180	1.2875 V	1.2 mm		12 mm	17179869184 bit	1.2125 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.35 V		NOT SPECIFIED	NOT SPECIFIED			14 mm
MT40A4G4DVN-062H:E	Micron Technology	DDR4 DRAM	OTHER	78	BGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		4294967296 words		YES		1.2	4	GRID ARRAY			95 Cel		4GX4	4G		0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V				17179869184 bit	1.14 V	AUTO/SELF REFRESH
MT40A8G4CLU-062H:E	Micron Technology	DDR4 DRAM	OTHER	78	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8589934592 words		YES		1.2	4	GRID ARRAY			95 Cel		8GX4	8G		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78	1.26 V				34359738368 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260
MT40A8G4CLU-075H:E	Micron Technology	DDR4 DRAM	OTHER	78	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		8589934592 words		YES		1.2	4	GRID ARRAY			95 Cel		8GX4	8G		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78	1.26 V				34359738368 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260
MT40A256M16LY-062EAAT:F	Micron Technology	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	58 mA	268435456 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	105 Cel	OPEN-DRAIN	256MX16	256M	1.14 V	-40 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm		7.5 mm	4294967296 bit	1.14 V			NOT SPECIFIED	NOT SPECIFIED	.048 Amp	8	13.5 mm
MT40A256M16LY-062EAIT:F	Micron Technology	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	56 mA	268435456 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel	3-STATE	256MX16	256M	1.14 V	-40 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm		7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.046 Amp	8	13.5 mm
MT40A256M16LY-062EAUT:F	Micron Technology	DDR4 DRAM	AUTOMOTIVE	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	60 mA	268435456 words	8	YES	COMMON	1.2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	125 Cel	OPEN-DRAIN	256MX16	256M	1.14 V	-40 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm		7.5 mm	4294967296 bit	1.14 V			NOT SPECIFIED	NOT SPECIFIED	.05 Amp	8	13.5 mm
MT40A512M8SA-062EAAT:F	Micron Technology	DDR4 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	51 mA	536870912 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	105 Cel	3-STATE	512MX8	512M	1.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm		7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.047 Amp	8	11 mm
MT40A512M8SA-062EAIT:F	Micron Technology	DDR4 DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	49 mA	536870912 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel	3-STATE	512MX8	512M	1.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm		7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.045 Amp	8	11 mm
MT40A512M8SA-062EAUT:F	Micron Technology	DDR4 DRAM	AUTOMOTIVE	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	53 mA	536870912 words	8	YES	COMMON	1.2	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	125 Cel	3-STATE	512MX8	512M	1.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm		7.5 mm	4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.049 Amp	8	11 mm
MTA9ASF2G72PZ-3G2B1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES			72	MICROELECTRONIC ASSEMBLY			95 Cel		2GX72	2G		0 Cel		DUAL	1	R-XDMA-N288		31.4 mm		3.9 mm	154618822656 bit		AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA18ASF2G72PZ-3G2J3	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words	8	YES	COMMON	1.2	72	MICROELECTRONIC ASSEMBLY	DIMM288,33		95 Cel	OPEN-DRAIN	2GX72	2G		0 Cel		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm	1600 MHz	3.9 mm	154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX					8	133.35 mm
MTA9ASF1G72PZ-3G2J3	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2	72	MICROELECTRONIC ASSEMBLY			95 Cel		1GX72	1G		0 Cel		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm	77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA16ATF4G64AZ-3G2B1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		4294967296 words					64	MICROELECTRONIC ASSEMBLY			95 Cel		4GX64	4G		0 Cel		DUAL	1	R-XDMA-N288					274877906944 bit
MTA36ASF8G72PZ-2G9B1	Micron Technology	DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		8589934592 words					72	MICROELECTRONIC ASSEMBLY			95 Cel		8GX72	8G		0 Cel		DUAL	1	R-XDMA-N288					618475290624 bit
MTA4ATF1G64AZ-3G2B1	Micron Technology	DDR4 DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words					64	MICROELECTRONIC ASSEMBLY			95 Cel		1GX64	1G		0 Cel		DUAL	1	R-XDMA-N288					68719476736 bit
MT46V16M16CY-5B:KTR	Micron Technology	DDR1 DRAM	COMMERCIAL	60	TBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words				2.6	16	GRID ARRAY, THIN PROFILE		1 mm	70 Cel		16MX16	16M		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B60	2.7 V	1.2 mm		8 mm	268435456 bit	2.5 V	AUTO/SELF REFRESH	e1	30	260			12.5 mm	.7 ns
MT41K512M16VRN-107AAT:PTR	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	304 mA	536870912 words		YES	COMMON	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	105 Cel		512MX16	512M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.45 V	1.2 mm	934.57 MHz	8 mm	8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260	.022 Amp		14 mm
MT41K512M16VRN-107AIT:PTR	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	304 mA	536870912 words	4,8	YES	COMMON	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	.8 mm	95 Cel		512MX16	512M	1.283 V	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.45 V	1.2 mm	934.57 MHz	8 mm	8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260	.022 Amp	4,8	14 mm
MT41K512M8DA-093:PTR	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	150 mA	536870912 words	8	YES	COMMON	1.35	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	.8 mm	95 Cel	3-STATE	512MX8	512M		0 Cel		BOTTOM	1	R-PBGA-B78	1.45 V	1.2 mm	1066 MHz	8 mm	4294967296 bit	1.283 V			NOT SPECIFIED	NOT SPECIFIED	.012 Amp	8	10.5 mm
MT44K16M36RB-093E:BTR	Micron Technology	DDR3 DRAM	OTHER	168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	2840 mA	16777216 words	2,4	YES	COMMON	1.35	36	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	100 Cel	3-STATE	16MX36	16M		0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm	1075 MHz	13.5 mm	603979776 bit	1.28 V		e1			.225 Amp	2,4	13.5 mm
MT44K16M36RB-093EIT:BTR	Micron Technology	DDR3 DRAM	INDUSTRIAL	168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	2840 mA	16777216 words	2,4	YES	COMMON	1.35	36	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	100 Cel	3-STATE	16MX36	16M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm	1075 MHz	13.5 mm	603979776 bit	1.28 V		e1	30	260	.225 Amp	2,4	13.5 mm
MT44K16M36RB-093F:BTR	Micron Technology	RLDRAM3		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	2840 mA	16777216 words	2,4,8	NO	COMMON	1.35	36	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel		16MX36	16M		0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.45 V	1.2 mm	1075.2 MHz	13.5 mm	603979776 bit	1.28 V	AUTO REFRESH	e1	30	260	.225 Amp	2,4,8	13.5 mm
MT44K16M36RB-107E:BTR	Micron Technology	RLDRAM3		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	2665 mA	16777216 words	2,4,8	NO	COMMON	1.35	36	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel		16MX36	16M		0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.45 V	1.2 mm	934.5 MHz	13.5 mm	603979776 bit	1.28 V	AUTO REFRESH	e1	30	260	.225 Amp	2,4,8	13.5 mm
MT44K32M18RB-093E:BTR	Micron Technology	RLDRAM3		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	2620 mA	33554432 words	2,4,8	NO	COMMON	1.35	18	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel		32MX18	32M		0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.45 V	1.2 mm	1075.2 MHz	13.5 mm	603979776 bit	1.28 V	AUTO REFRESH	e1	30	260	.225 Amp	2,4,8	13.5 mm
MT44K32M18RB-107E:BTR	Micron Technology	RLDRAM3		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	2565 mA	33554432 words	2,4,8	NO	COMMON	1.35	18	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel		32MX18	32M		0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.45 V	1.2 mm	934.5 MHz	13.5 mm	603979776 bit	1.28 V	AUTO REFRESH	e1	30	260	.225 Amp	2,4,8	13.5 mm
MT44K32M18RB-107EIT:BTR	Micron Technology	RLDRAM3		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	2565 mA	33554432 words	2,4,8	NO	COMMON	1.35	18	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel		32MX18	32M		-40 Cel		BOTTOM	1	S-PBGA-B168	1.45 V	1.2 mm	934.5 MHz	13.5 mm	603979776 bit	1.28 V	AUTO REFRESH				.225 Amp	2,4,8	13.5 mm
MT44K32M18RB-125E:ATR	Micron Technology	RLDRAM3		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words	2,4,8	NO	COMMON	1.35	18	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel		32MX18	32M		0 Cel		BOTTOM	1	S-PBGA-B168	1.45 V	1.2 mm	800 MHz	13.5 mm	603979776 bit	1.28 V	AUTO REFRESH		NOT SPECIFIED	NOT SPECIFIED		2,4,8	13.5 mm
MT44K32M36RB-093E:ATR	Micron Technology	RLDRAM3		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	1140 mA	33554432 words	2,4,8	NO	COMMON	1.35	36	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel		32MX36	32M		0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.45 V	1.2 mm	1075.2 MHz	13.5 mm	1207959552 bit	1.28 V	AUTO REFRESH	e1	30	260	.225 Amp	2,4,8	13.5 mm
MT44K32M36RB-107E:ATR	Micron Technology	RLDRAM3		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	1070 mA	33554432 words	2,4,8	NO	COMMON	1.35	36	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel		32MX36	32M		0 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.45 V	1.2 mm	934.5 MHz	13.5 mm	1207959552 bit	1.28 V	AUTO REFRESH	e1	30	260	.225 Amp	2,4,8	13.5 mm
MT44K32M36RB-107EIT:ATR	Micron Technology	RLDRAM3		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	1070 mA	33554432 words	2,4,8	NO	COMMON	1.35	36	GRID ARRAY, THIN PROFILE	BGA168,13X13,40	1 mm	95 Cel		32MX36	32M		-40 Cel		BOTTOM	1	S-PBGA-B168	1.45 V	1.2 mm	934.5 MHz	13.5 mm	1207959552 bit	1.28 V	AUTO REFRESH				.225 Amp	2,4,8	13.5 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.