Micron Technology DRAM 1,751

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MT41K128M8DA-107AIT:J	Micron Technology	DDR3L DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			128MX8	128M			BOTTOM	1	R-PBGA-B78	1.45 V	1.2 mm		8 mm		1073741824 bit	1.283 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH						10.5 mm
MT41K1G4RG-107:N	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.35		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		1GX4	1G	0 Cel		BOTTOM	1	R-PBGA-B78	1.45 V	1.2 mm		7.5 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			10.6 mm
MT41K256M16LY-107:N	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX16	256M	0 Cel		BOTTOM	1	R-PBGA-B96	1.45 V	1.2 mm		7.5 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH		30	260			13.5 mm
MT41K512M8RG-093:N	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.45 V	1.2 mm		7.5 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			10.6 mm
MT41K512M8RG-107:N	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX8	512M	0 Cel		BOTTOM	1	R-PBGA-B78	1.45 V	1.2 mm		7.5 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH						10.6 mm
MT42L64M32D1TK-18AAT:C	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	220 mA	67108864 words	4,8,16	YES	COMMON	1.2	1.2,1.8	32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA134,10X17,25	DRAMs	.65 mm	105 Cel	3-STATE	64MX32	64M	-40 Cel		BOTTOM	1	R-PBGA-B134	1.3 V	.7 mm	533 MHz	10 mm	Not Qualified	2147483648 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM				.000025 Amp	4,8,16	11.5 mm	5.5 ns
MT46H128M32L2KQ-48IT:C	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		128MX32	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.95 V	.75 mm		12 mm		4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	4.8 ns
MT46H128M32L2KQ-48WT:C	Micron Technology	LPDDR1 DRAM	OTHER	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		128MX32	128M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.95 V	.75 mm		12 mm		4294967296 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	4.8 ns
MT46H64M32LFKQ-5IT:C	Micron Technology	LPDDR1 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		64MX32	64M	-40 Cel		BOTTOM	1	S-PBGA-B168	1.95 V	.75 mm		12 mm		2147483648 bit	1.7 V	AUTO/SELF REFRESH						12 mm	5 ns
MT47H64M16HR-25EXIT:H	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	BGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	ASYNCHRONOUS	260 mA	67108864 words	4,8	YES	COMMON	1.8	1.8	16	GRID ARRAY	BGA84,9X15,32	DRAMs	.8 mm	85 Cel	3-STATE	64MX16	64M	-40 Cel		BOTTOM	1	R-PBGA-B84			400 MHz		Not Qualified	1073741824 bit		SELF REFRESH		30	260	.007 Amp	4,8		.4 ns
MT47H64M16NF-25EXIT:M	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX16	64M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm		8 mm		1073741824 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260			12.5 mm	.4 ns
MTA18ASF1G72AZ-2G1A1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel		1GX72	1G	0 Cel		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm		77309411328 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT16LSDF6464HY-133G1	Micron Technology	SYNCHRONOUS DRAM MODULE	COMMERCIAL	144	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		67108864 words		YES		3.3		64	MICROELECTRONIC ASSEMBLY			.8 mm	65 Cel		64MX64	64M	0 Cel		ZIG-ZAG	1	R-XZMA-N144	3.6 V	31.88 mm		3.8 mm		4294967296 bit	3 V	AUTO/SELF REFRESH; WD-MAX		30	260			67.585 mm	5.4 ns
MT46V16M16CY-5BXIT:M	Micron Technology	DDR1 DRAM	INDUSTRIAL	60	BGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		2.6		16	GRID ARRAY				85 Cel		16MX16	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60	2.7 V					268435456 bit	2.5 V	AUTO/SELF REFRESH	e1
MT18KDF2G72AZ-1G6A1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N240	1.45 V	18.9 mm		4 mm		154618822656 bit	1.235 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						133.35 mm
MT47H32M16NF-25EAIT:H	Micron Technology	DDR2 DRAM	INDUSTRIAL	84	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	215 mA	33554432 words	4,8	YES	COMMON	1.8		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,9X15,32		.8 mm	85 Cel	3-STATE	32MX16	32M	-40 Cel		BOTTOM	1	R-PBGA-B84	1.9 V	1.2 mm	400 MHz	8 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.01 Amp	4,8	12.5 mm
MT47H64M8SH-25EAAT:H	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	150 mA	67108864 words	4,8	YES	COMMON	1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		.8 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	400 MHz	8 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.01 Amp	4,8	10 mm
MT47H64M8SH-25EAIT:H	Micron Technology	DDR2 DRAM	INDUSTRIAL	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	150 mA	67108864 words	4,8	YES	COMMON	1.8		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32		.8 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel		BOTTOM	1	R-PBGA-B60	1.9 V	1.2 mm	400 MHz	8 mm		536870912 bit	1.7 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED	.01 Amp	4,8	10 mm
MTA16ATF1G64HZ-2G1A2	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2		64	MICROELECTRONIC ASSEMBLY				85 Cel		1GX64	1G	0 Cel		ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm		68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						69.6 mm
MTA36ADS2G72PZ-2G1A1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288	1.26 V	18.9 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA72ASS4G72LZ-2G1A1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		4294967296 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel		4GX72	4G	0 Cel		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm		309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT41K1G8SN-107:A	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78	1.45 V	1.2 mm		9 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH						13.2 mm
MT41K1G8SN-107IT:A	Micron Technology	DDR3L DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		1GX8	1G	-40 Cel		BOTTOM	1	R-PBGA-B78	1.45 V	1.2 mm		9 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH						13.2 mm
MT41K1G8SN-125:A	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78	1.45 V	1.2 mm		9 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13.2 mm
MT41K1G8SN-125IT:A	Micron Technology	DDR3L DRAM	INDUSTRIAL	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		1GX8	1G	-40 Cel		BOTTOM	1	R-PBGA-B78	1.45 V	1.2 mm		9 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH						13.2 mm
MT41K2G4SN-125:A	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words		YES		1.35		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2GX4	2G	0 Cel		BOTTOM	1	R-PBGA-B78	1.45 V	1.2 mm		9 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH						13.2 mm
MT41K512M16HA-107:A	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX16	512M	0 Cel		BOTTOM	1	R-PBGA-B96	1.45 V	1.2 mm		9 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			14 mm
MT41K512M16HA-107IT:A	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX16	512M	-40 Cel		BOTTOM	1	R-PBGA-B96	1.45 V	1.2 mm		9 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH						14 mm
MT41K512M16HA-125:A	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.35		16	GRID ARRAY			.8 mm	85 Cel		512MX16	512M	0 Cel		BOTTOM	1	R-PBGA-B96	1.45 V	1.2 mm		9 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			14 mm
MT41K512M16HA-125IT:A	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX16	512M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	1.45 V	1.2 mm		9 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT4VDDT1664HY-335M1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	200	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		16777216 words		YES		2.5		64	MICROELECTRONIC ASSEMBLY				70 Cel		16MX64	16M	0 Cel		ZIG-ZAG	1	R-XZMA-N200	2.7 V	31.9 mm		2.45 mm		1073741824 bit	2.3 V	AUTO/SELF REFRESH; WD-MAX						67.6 mm
MT48LC4M32B2P-6AXIT:L	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	86	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		4194304 words		YES		3.3		32	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		4MX32	4M	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G86	3.6 V	1.2 mm		10.16 mm		134217728 bit	3 V	AUTO/SELF REFRESH	e3					22.22 mm	5.4 ns
EDF8132A3MA-JD-F-D	Micron Technology	LPDDR3 DRAM	OTHER	178	BGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2		32	GRID ARRAY			.8 mm	85 Cel		256MX32	256M	-30 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B178	1.3 V	.85 mm		10.5 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1					11.5 mm
MT46H256M32L4LE-48WT:C	Micron Technology	LPDDR1 DRAM	OTHER	168	VFBGA		SQUARE	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.8		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		256MX32	256M	-25 Cel	TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.95 V	1 mm		12 mm		8589934592 bit	1.7 V	AUTO/SELF REFRESH	e1					12 mm	5 ns
MT41J64M16JT-15EIT:GTR	Micron Technology	DDR3 DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		YES		1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			64MX16	64M		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96	1.575 V	1.2 mm		8 mm		1073741824 bit	1.425 V	AUTO/SELF REFRESH	e1	30	260			14 mm	.125 ns
MT40A512M16HA-083E:A	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX16	512M	0 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm		9 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			14 mm
MT40A512M16HA-083EIT:A	Micron Technology	DDR4 DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX16	512M	-40 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm		9 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			14 mm
MT41K1G16DGA-125:A	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		1GX16	1G	0 Cel		BOTTOM	1	R-PBGA-B96	1.425 V	1.2 mm		9.5 mm		17179869184 bit	1.283 V	AUTO/SELF REFRESH						14 mm
MT48LC4M32B2B5-6AAIT:L	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	90	VFBGA		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		4194304 words		YES		3.3		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX32	4M	-40 Cel		BOTTOM	1	R-PBGA-B90	3.6 V	1 mm		8 mm		134217728 bit	3 V	AUTO/SELF REFRESH						13 mm	5.4 ns
MT48LC4M32B2P-6AAAT:L	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	86	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	GULL WING	SYNCHRONOUS		4194304 words		YES		3.3		32	SMALL OUTLINE, THIN PROFILE			.5 mm	105 Cel		4MX32	4M	-40 Cel		DUAL	1	R-PDSO-G86	3.6 V	1.2 mm		10.16 mm		134217728 bit	3 V	AUTO/SELF REFRESH						22.22 mm	5.4 ns
MT48LC4M32B2P-6AAIT:L	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	86	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	GULL WING	SYNCHRONOUS		4194304 words		YES		3.3		32	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		4MX32	4M	-40 Cel		DUAL	1	R-PDSO-G86	3.6 V	1.2 mm		10.16 mm		134217728 bit	3 V	AUTO/SELF REFRESH						22.22 mm	5.4 ns
MT72JSZS4G72LZ-1G9N1A7	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		4294967296 words		YES		1.5		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		4GX72	4G	0 Cel		DUAL	1	R-XDMA-N240	1.575 V	30.5 mm		7.55 mm		309237645312 bit	1.425 V	SELF REFRESH; WD-MAX						133.35 mm
MTA16ATF1G64HZ-2G3A2	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY			.5 mm	85 Cel		512MX72	512M	0 Cel		ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm		38654705664 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						69.6 mm
MTA16ATF2G64AZ-2G3A1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		64	MICROELECTRONIC ASSEMBLY			.85 mm	85 Cel		2GX64	2G	0 Cel		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm		137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA16ATF2G64HZ-2G3A1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		64	MICROELECTRONIC ASSEMBLY			.5 mm	85 Cel		2GX64	2G	0 Cel		ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm		137438953472 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						69.6 mm
MTA18ADF2G72PZ-2G3A1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY			.85 mm	85 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288	1.26 V	18.9 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA18ASF2G72AZ-2G3A1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY			.85 mm	85 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA18ASF2G72HZ-2G3A1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY			.5 mm	85 Cel		2GX72	2G	0 Cel		ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						69.6 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.