Micron Technology DRAM 1,751

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
MTA18ASF2G72PDZ-2G3A1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		2147483648 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY			.85 mm	85 Cel		2GX72	2G	0 Cel		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm		154618822656 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX		NOT SPECIFIED	NOT SPECIFIED			133.35 mm
MTA36ADS4G72PZ-2G3A1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		4294967296 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY			.85 mm	85 Cel		4GX72	4G	0 Cel		DUAL	1	R-XDMA-N288	1.26 V	18.9 mm		3.9 mm		309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA36ASF4G72LZ-2G3A1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		4294967296 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY			.85 mm	85 Cel		4GX72	4G	0 Cel		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm		309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MTA8ATF1G64HZ-2G3A1	Micron Technology	DDR DRAM MODULE	OTHER	260	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.2		64	MICROELECTRONIC ASSEMBLY			.5 mm	85 Cel		1GX64	1G	0 Cel		ZIG-ZAG	1	R-XZMA-N260	1.26 V	30.13 mm		3.7 mm		68719476736 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						69.6 mm
MT49H16M18CFM-25:B	Micron Technology	DDR DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	655 mA	16777216 words			SEPARATE	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	16MX18	16M	0 Cel		BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH				.005 Amp	2,4,8	18.5 mm	.3 ns
MT49H16M18CBM-25:B	Micron Technology	DDR DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	655 mA	16777216 words			SEPARATE	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	16MX18	16M	0 Cel		BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH				.005 Amp	2,4,8	18.5 mm	.3 ns
MT40A1G8PM-083E:A	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		1GX8	1G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm		9 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH						13.2 mm
MT40A2G4PM-083E:A	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words		YES		1.2		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2GX4	2G	0 Cel		BOTTOM	1	R-PBGA-B78	1.26 V	1.2 mm		9 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH						13.2 mm
MT41K1G8RKB-107:N	Micron Technology	DDR3L DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES		1.35		8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			1GX8	1G			BOTTOM	1	R-PBGA-B78	1.45 V	1.2 mm		8 mm		8589934592 bit	1.283 V	SELF REFRESH						10.5 mm
MT41K2G4RKB-107:N	Micron Technology	DDR3L DRAM		78	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		2147483648 words		YES		1.35		4	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm			2GX4	2G			BOTTOM	1	R-PBGA-B78	1.45 V	1.2 mm		8 mm		8589934592 bit	1.283 V	SELF REFRESH						10.5 mm
MT41K512M16HA-125AIT:A	Micron Technology	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX16	512M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96	1.45 V	1.2 mm		9 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260			14 mm
MT48LC32M8A2P-7E:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	150 mA	33554432 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel	3-STATE	32MX8	32M	0 Cel		DUAL	1	R-PDSO-G54	3.6 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH				.0025 Amp	1,2,4,8	22.22 mm	5.4 ns
MT49H16M18CSJ-25:B	Micron Technology	DDR DRAM	OTHER	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	655 mA	16777216 words			SEPARATE	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	16MX18	16M	0 Cel		BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH				.005 Amp	2,4,8	18.5 mm	.3 ns
MT49H16M18CSJ-25IT:B	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	655 mA	16777216 words			SEPARATE	1.8	1.5/1.8,1.8,2.5	18	GRID ARRAY, THIN PROFILE	BGA144,12X18,40/32	DRAMs	1 mm	85 Cel	3-STATE	16MX18	16M	-40 Cel		BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm	400 MHz	11 mm	Not Qualified	301989888 bit	1.7 V	AUTO REFRESH				.005 Amp	2,4,8	18.5 mm	.3 ns
MT49H16M18SJ-25:B	Micron Technology	DDR DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words				1.8		18	GRID ARRAY, THIN PROFILE			1 mm			16MX18	16M			BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm		11 mm		301989888 bit	1.7 V	AUTO REFRESH		NOT SPECIFIED	NOT SPECIFIED			18.5 mm
MT49H16M18SJ-25IT:B	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words				1.8		18	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		16MX18	16M	-40 Cel		BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm		11 mm		301989888 bit	1.7 V	AUTO REFRESH						18.5 mm
MT49H16M36SJ-18IT:B	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words				1.8		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		16MX36	16M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm		11 mm		603979776 bit	1.7 V	AUTO REFRESH	e1	30	260			18.5 mm
MT49H16M36SJ-25:B	Micron Technology	DDR DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words				1.8		36	GRID ARRAY, THIN PROFILE			1 mm			16MX36	16M			BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm		11 mm		603979776 bit	1.7 V	AUTO REFRESH		30	260			18.5 mm
MT49H16M36SJ-25IT:B	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words				1.8		36	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		16MX36	16M	-40 Cel		BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm		11 mm		603979776 bit	1.7 V	AUTO REFRESH						18.5 mm
MT49H32M18CSJ-18:B	Micron Technology	DDR DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words				1.8		18	GRID ARRAY, THIN PROFILE			1 mm			32MX18	32M			BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm		11 mm		603979776 bit	1.7 V	AUTO REFRESH		NOT SPECIFIED	NOT SPECIFIED			18.5 mm
MT49H32M18CSJ-25E:B	Micron Technology	DDR DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words				1.8		18	GRID ARRAY, THIN PROFILE			1 mm			32MX18	32M			BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm		11 mm		603979776 bit	1.7 V	AUTO REFRESH						18.5 mm
MT49H32M18CSJ-25EIT:B	Micron Technology	DDR DRAM	INDUSTRIAL	144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words				1.8		18	GRID ARRAY, THIN PROFILE			1 mm	85 Cel		32MX18	32M	-40 Cel		BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm		11 mm		603979776 bit	1.7 V	AUTO REFRESH						18.5 mm
MT49H32M18SJ-18:B	Micron Technology	DDR DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words				1.8		18	GRID ARRAY, THIN PROFILE			1 mm			32MX18	32M			BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm		11 mm		603979776 bit	1.7 V	AUTO REFRESH						18.5 mm
MT49H32M18SJ-25:B	Micron Technology	DDR DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words				1.8		18	GRID ARRAY, THIN PROFILE			1 mm			32MX18	32M			BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm		11 mm		603979776 bit	1.7 V	AUTO REFRESH		NOT SPECIFIED	NOT SPECIFIED			18.5 mm
MT49H64M9SJ-25E:B	Micron Technology	DDR DRAM		144	TBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words				1.8		9	GRID ARRAY, THIN PROFILE			1 mm			64MX9	64M			BOTTOM	1	R-PBGA-B144	1.9 V	1.2 mm		11 mm		603979776 bit	1.7 V	AUTO REFRESH						18.5 mm
MT9KSF51272AZ-1G6P1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		512MX72	512M	0 Cel		DUAL	1	R-XDMA-N240	1.45 V	30.5 mm		2.7 mm		38654705664 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						133.35 mm
EDY4016AABG-DR-F-D	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX16	256M	0 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm		7.5 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH						13.5 mm
EDY4016AABG-JD-F-D	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		256MX16	256M	0 Cel		BOTTOM	1	R-PBGA-B96	1.26 V	1.2 mm		7.5 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH						13.5 mm
MT18KSF1G72HZ-1G6P1	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	DUAL BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		1GX72	1G	0 Cel		ZIG-ZAG	1	R-XZMA-N204	1.45 V	30.15 mm		3.8 mm		77309411328 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						67.6 mm
MT18KSF1G72PZ-1G6P1	Micron Technology	DDR3L DRAM MODULE	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		1073741824 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		1GX72	1G	0 Cel		DUAL	1	R-XDMA-N240	1.45 V	30.5 mm		4 mm		77309411328 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						133.35 mm
MT46V32M16P-5BXIT:J	Micron Technology	DDR1 DRAM	INDUSTRIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		33554432 words		YES		2.6		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	85 Cel		32MX16	32M	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G66	2.7 V	1.2 mm		10.16 mm		536870912 bit	2.5 V	AUTO/SELF REFRESH	e3					22.22 mm	.7 ns
MT9KSF51272HZ-1G6P1	Micron Technology	DDR DRAM MODULE	COMMERCIAL	204	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		72	MICROELECTRONIC ASSEMBLY				70 Cel		512MX72	512M	0 Cel		ZIG-ZAG	1	R-XZMA-N204	1.45 V	30.15 mm		3.8 mm		38654705664 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						67.6 mm
MT44K32M36RB-083F:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words				1.35		36	GRID ARRAY, THIN PROFILE			1 mm			32MX36	32M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		1207959552 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K32M36RB-093E:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words				1.35		36	GRID ARRAY, THIN PROFILE			1 mm			32MX36	32M		TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		1207959552 bit	1.28 V	AUTO REFRESH	e1	30	260			13.5 mm
MT44K32M36RB-093F:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words				1.35		36	GRID ARRAY, THIN PROFILE			1 mm			32MX36	32M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		1207959552 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K32M36RB-107E:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words				1.35		36	GRID ARRAY, THIN PROFILE			1 mm			32MX36	32M		TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		1207959552 bit	1.28 V	AUTO REFRESH	e1	30	260			13.5 mm
MT44K64M18RB-083F:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words				1.35		18	GRID ARRAY, THIN PROFILE			1 mm			64MX18	64M		Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		1207959552 bit	1.28 V	AUTO REFRESH	e1	30	260			13.5 mm
MT44K64M18RB-093E:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words				1.35		18	GRID ARRAY, THIN PROFILE			1 mm			64MX18	64M		TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		1207959552 bit	1.28 V	AUTO REFRESH	e1	30	260			13.5 mm
MT44K64M18RB-093F:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words				1.35		18	GRID ARRAY, THIN PROFILE			1 mm			64MX18	64M			BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		1207959552 bit	1.28 V	AUTO REFRESH						13.5 mm
MT44K64M18RB-107E:A	Micron Technology	DDR DRAM		168	TBGA		SQUARE	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words				1.35		18	GRID ARRAY, THIN PROFILE			1 mm			64MX18	64M		TIN SILVER COPPER	BOTTOM	1	S-PBGA-B168	1.42 V	1.2 mm		13.5 mm		1207959552 bit	1.28 V	AUTO REFRESH	e1	30	260			13.5 mm
MT8KTF51264AZ-1G9P1	Micron Technology	DDR3 DRAM	COMMERCIAL	240	DIMM		RECTANGULAR	UNSPECIFIED	SINGLE BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		536870912 words		YES		1.35		64	MICROELECTRONIC ASSEMBLY			1 mm	70 Cel		512MX64	512M	0 Cel		DUAL	1	R-XDMA-N240	1.45 V	30.5 mm		2.7 mm		34359738368 bit	1.283 V	AUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY						133.35 mm
MTA72ASS8G72LZ-2G3A1	Micron Technology	DDR DRAM MODULE	OTHER	288	DIMM		RECTANGULAR	UNSPECIFIED	FOUR BANK PAGE BURST	NO	1	CMOS		NO LEAD	SYNCHRONOUS		4294967296 words		YES		1.2		72	MICROELECTRONIC ASSEMBLY				85 Cel		4GX72	4G	0 Cel		DUAL	1	R-XDMA-N288	1.26 V	31.4 mm		3.9 mm		309237645312 bit	1.14 V	AUTO/SELF REFRESH; WD-MAX						133.35 mm
MT48LC16M16A2P-6AAAT:G	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	GULL WING	SYNCHRONOUS		16777216 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	105 Cel		16MX16	16M	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G54	3.6 V	1.2 mm		10.16 mm		268435456 bit	3 V	AUTO/SELF REFRESH	e3					22.22 mm	5.4 ns
EDB5432BEBH-1DAAT-F-D	Micron Technology	LPDDR2 DRAM		134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm			16MX32	16M			BOTTOM	1	R-PBGA-B134	1.3 V	1 mm		10 mm		536870912 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						11.5 mm
EDB5432BEBH-1DAUT-F-D	Micron Technology	LPDDR2 DRAM	AUTOMOTIVE	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	125 Cel		16MX32	16M	-40 Cel		BOTTOM	1	R-PBGA-B134	1.3 V	1 mm		10 mm		536870912 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
EDB5432BEBH-1DIT-F-D	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	134	VFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.65 mm	85 Cel		16MX32	16M	-40 Cel		BOTTOM	1	R-PBGA-B134	1.3 V	1 mm		10 mm		536870912 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			11.5 mm
EDB5432BEPA-1DAAT-F-D	Micron Technology	LPDDR2 DRAM		168	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm			16MX32	16M			BOTTOM	1	S-PBGA-B168	1.3 V	.8 mm		12 mm		536870912 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM		NOT SPECIFIED	NOT SPECIFIED			12 mm
EDB5432BEPA-1DIT-F-D	Micron Technology	LPDDR2 DRAM	INDUSTRIAL	168	VFBGA		SQUARE	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words		YES		1.2		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		16MX32	16M	-40 Cel		BOTTOM	1	S-PBGA-B168	1.3 V	.8 mm		12 mm		536870912 bit	1.14 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM						12 mm

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.