EEPROM EEPROM 641

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
DS1990R-F5	Maxim Integrated	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		64 words		3.3			1	DISK BUTTON					85 Cel			64X1	64	-40 Cel		TIN LEAD			END			O-MEDB-N2		6 V					Not Qualified		1-WIRE	64 bit	2.8 V			e0
CAT64LC40YI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	VSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		32768 words		3.3			8	SMALL OUTLINE, VERY THIN PROFILE				1.2 mm	85 Cel			32KX8	32K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8	1	6 V	.65 mm			3 mm	Not Qualified		SPI	262144 bit	2.5 V			e4	30	260		4.4 mm
W27C512-45Z	Winbond Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5			8	IN-LINE				2.54 mm	70 Cel			64KX8	64K	0 Cel					DUAL			R-PDIP-T28		5.25 V	5.33 mm			15.24 mm	Not Qualified			524288 bit	4.75 V				NOT SPECIFIED	NOT SPECIFIED		37.08 mm	45 ns	12
DS2431X-S	Maxim Integrated	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		1024 words		3.3		3/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA6,2X3,40/20	EEPROMs	10	.5 mm	85 Cel			1KX1	1K	-40 Cel		TIN LEAD			BOTTOM			R-PBGA-B6		5.25 V	.67 mm	50000 Write/Erase Cycles		1.75 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS		e0				1.98 mm
S-93C66BD0I-I8T1U	Ablic	EEPROM	INDUSTRIAL	8	VSOF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		FLAT	SERIAL	SYNCHRONOUS		256 words		5			16	SMALL OUTLINE, VERY THIN PROFILE			100	.5 mm	85 Cel			256X16	256	-40 Cel		TIN			DUAL			R-PDSO-F8		5.5 V	.5 mm		2 MHz	1.97 mm		8 ms	3-WIRE	4096 bit	4.5 V	100 YEARS DATA RETENTION		e3				2.23 mm
NV24C32DTVLT3G	Onsemi	EEPROM	AUTOMOTIVE	8	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	1 mA	4096 words					8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSOP8,.25			.65 mm	125 Cel	NO		128X32	32K	-40 Cel	NO	NICKEL PALLADIUM GOLD			DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		4 ms	I2C	32768 bit	1.7 V		32	e4	30	260	.000002 Amp	4.4 mm			YES
24CW1280T-I/CS0668	Microchip Technology	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	BALL	SERIAL	SYNCHRONOUS	1 mA	16384 words		1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,16		200	.4 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel		TIN SILVER COPPER	1010DDDR		BOTTOM	1	SOFTWARE	R-PBGA-B4		5.5 V	.33 mm	1000000 Write/Erase Cycles	1 MHz			5 ms	I2C	131072 bit	1.6 V			e1			.000001 Amp			1.8
24CW1280T-I/CS1668	Microchip Technology	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	BALL	SERIAL	SYNCHRONOUS	1 mA	16384 words		1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,20		200	.5 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel		TIN SILVER COPPER	1010DDDR		BOTTOM	1	SOFTWARE	R-PBGA-B4		5.5 V	.33 mm	1000000 Write/Erase Cycles	1 MHz			5 ms	I2C	131072 bit	1.6 V	TERM PITCH-MAX		e1			.000001 Amp			1.8
24FC01-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		2.5			8	SMALL OUTLINE	SOP8,.19		200	.65 mm	85 Cel			128X8	128	-40 Cel			1010XXXR		DUAL	1	HARDWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		5 ms	I2C	1024 bit	1.7 V						.000001 Amp	3 mm		2.5
24FC01-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		2.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		200	.65 mm	85 Cel			128X8	128	-40 Cel			1010XXXR		DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		5 ms	I2C	1024 bit	1.7 V						.000001 Amp	4.4 mm		2.5
24FC01T-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		2.5			8	SMALL OUTLINE	SOP8,.23		200	1.27 mm	125 Cel			128X8	128	-40 Cel			1010XXXR		DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm		5 ms	I2C	1024 bit	1.7 V						.000003 Amp	4.9 mm		2.5
M24C64X-FCU6T/TF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words		1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			8KX8	8K	-40 Cel					BOTTOM			R-PBGA-B4		5.5 V	.328 mm		1 MHz	.711 mm		5 ms	I2C	65536 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		.731 mm
11AA010-I/WF16K	Microchip Technology	EEPROM	INDUSTRIAL		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	128 words		5	NO		8	UNCASED CHIP	DIE OR CHIP		200		85 Cel	NO	TOTEM POLE	128X8	128	-40 Cel				NO	UPPER	1	SOFTWARE	R-XUUC-N		5.5 V		1000000 Write/Erase Cycles	.1 MHz			10 ms	1-WIRE	1024 bit	2.5 V						.000005 Amp
11AA020-I/S16K	Microchip Technology	EEPROM	INDUSTRIAL		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words		5	NO		8	UNCASED CHIP	DIE OR CHIP		200		85 Cel	NO	TOTEM POLE	256X8	256	-40 Cel				NO	UPPER	1	SOFTWARE	R-XUUC-N		5.5 V		1000000 Write/Erase Cycles	.1 MHz			10 ms	1-WIRE	2048 bit	2.5 V						.000005 Amp
11AA020-I/W16K	Microchip Technology	EEPROM	INDUSTRIAL		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words		5	NO		8	UNCASED CHIP	DIE OR CHIP		200		85 Cel	NO	TOTEM POLE	256X8	256	-40 Cel				NO	UPPER	1	SOFTWARE	R-XUUC-N		5.5 V		1000000 Write/Erase Cycles	.1 MHz			10 ms	1-WIRE	2048 bit	2.5 V						.000005 Amp
11AA020-I/WF16K	Microchip Technology	EEPROM	INDUSTRIAL		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words		5	NO		8	UNCASED CHIP	DIE OR CHIP		200		85 Cel	NO	TOTEM POLE	256X8	256	-40 Cel				NO	UPPER	1	SOFTWARE	R-XUUC-N		5.5 V		1000000 Write/Erase Cycles	.1 MHz			10 ms	1-WIRE	2048 bit	2.5 V						.000005 Amp
25LC320/WF	Microchip Technology	EEPROM	COMMERCIAL		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	5 mA	4096 words	SEPARATE	5			8	UNCASED CHIP	DIE OR CHIP		200		70 Cel		3-STATE	4KX8	4K	0 Cel					UPPER	1	HARDWARE	R-XUUC-N		5.5 V		1000000 Write/Erase Cycles	10 MHz			5 ms	SPI	32768 bit	4.5 V	ALSO OPERATES WITH 2.5V MIN @ 5MHZ AND 1.8VMIN @3MHZ								5
NV25128DWHFT3G	Onsemi	EEPROM																																Nickel/Palladium/Gold (Ni/Pd/Au)							1								SPI					e4	30	260
CAT25AM02C8ATR	Onsemi	EEPROM	COMMERCIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		262144 words		2.5			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					70 Cel			256KX16	256K	0 Cel		TIN SILVER			BOTTOM			R-PBGA-B8		3.6 V	.37 mm		5 MHz	2.04 mm		10 ms	SPI	4194304 bit	1.6 V			e2				3.12 mm
CAT25AM02C8CTR	Onsemi	EEPROM	COMMERCIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		262144 words		2.5			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					70 Cel			256KX16	256K	0 Cel		TIN SILVER			BOTTOM			R-PBGA-B8		3.6 V	.37 mm		5 MHz	2.04 mm		10 ms	SPI	4194304 bit	1.6 V			e2				3.12 mm
M24C64S-FCU6T/TF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words		1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			8KX8	8K	-40 Cel					BOTTOM			S-PBGA-B4	1	5.5 V	.33 mm		1 MHz	.833 mm		5 ms	I2C	65536 bit	1.7 V							.833 mm
BR24G02FVT-3AGE2	ROHM	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words					8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel			256X8	256	-40 Cel					DUAL			R-PDSO-G8		5.5 V	1.2 mm		.4 MHz	3 mm		5 ms	I2C	2048 bit	1.6 V	1.7V AT 1MHZ			NOT SPECIFIED	NOT SPECIFIED		4.4 mm
M24128S-FCU6T/TF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		16384 words		1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			16KX8	16K	-40 Cel					BOTTOM			S-PBGA-B4		5.5 V	.33 mm		1 MHz	.833 mm		5 ms	I2C	131072 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		.833 mm
M95080-DFMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words		1.8			8	SMALL OUTLINE				1.27 mm	85 Cel			1KX8	1K	-40 Cel					DUAL			R-PDSO-G8		5.5 V	1.75 mm		5 MHz	3.9 mm		5 ms	SPI	8192 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		4.9 mm
M24C32T-FCU6T/TF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2.5 mA	4096 words		1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			4KX8	4K	-40 Cel					BOTTOM			S-PBGA-B4		5.5 V	.33 mm		1 MHz	.833 mm		5 ms	I2C	32768 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		.833 mm
M24C64M-FCU6T/TF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words		2.5			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			8KX8	8K	-40 Cel					BOTTOM			R-PBGA-B4		5.5 V	.345 mm		1 MHz	.674 mm		5 ms	I2C	65536 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		.795 mm
M24128T-FCU6T/TF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		16384 words		1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			16KX8	16K	-40 Cel					BOTTOM			S-PBGA-B4		5.5 V	.33 mm		1 MHz	.833 mm		5 ms	I2C	131072 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		.833 mm
M24C32-FCU6TP/TF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		4096 words					8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			4KX8	4K	-40 Cel					BOTTOM			R-PBGA-B4		5.5 V	.345 mm		.4 MHz	.674 mm		5 ms	I2C	32768 bit	1.6 V				NOT SPECIFIED	NOT SPECIFIED		.795 mm
M24C32M-FCU6T/TF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		4096 words		2.5			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			4KX8	4K	-40 Cel					BOTTOM			R-PBGA-B4		5.5 V	.345 mm		1 MHz	.674 mm		5 ms	I2C	32768 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		.795 mm
M24C64T-FCU6T/TF	STMicroelectronics	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words		1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			8KX8	8K	-40 Cel					BOTTOM			S-PBGA-B4	1	5.5 V	.33 mm		1 MHz	.833 mm		5 ms	I2C	65536 bit	1.7 V							.833 mm
CAV24C32C4CTR	Onsemi	EEPROM	AUTOMOTIVE	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		4096 words		3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	125 Cel			4KX8	4K	-40 Cel		Tin/Silver (Sn/Ag)			BOTTOM			S-PBGA-B4	1	5.5 V	.35 mm		.4 MHz	.76 mm		5 ms	I2C	32768 bit	2.5 V			e2	NOT SPECIFIED	NOT SPECIFIED		.76 mm
LE2416RDXATDG	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		2048 words		2			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			2KX8	2K	-40 Cel		TIN SILVER COPPER			BOTTOM			R-PBGA-B6	1	3.6 V	.33 mm		1 MHz	.8 mm		5 ms	I2C	16384 bit	1.7 V			e1	30	260		1.2 mm
LE2464DXATBG	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words		2			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			8KX8	8K	-40 Cel		TIN SILVER COPPER			BOTTOM			R-PBGA-B6	1	3.6 V	.33 mm		1 MHz	.8 mm		5 ms	I2C	65536 bit	1.7 V			e1	30	260		1.2 mm
CAV25512HU5E-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		65536 words		5			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	125 Cel			64KX8	64K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-N8	1	5.5 V	.55 mm		10 MHz	2 mm		5 ms	SPI	524288 bit	2.5 V			e4	30	260		3 mm
NV25M01DWUTG	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		131072 words		2.5			8	SMALL OUTLINE				1.27 mm	105 Cel			128KX8	128K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)			DUAL			R-PDSO-G8	1	5.5 V	1.75 mm		5 MHz	3.9 mm		5 ms	SPI	1048576 bit	1.8 V			e4	30	260		4.9 mm
AT28C64B-15JU-235	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	400 mA	8192 words		5			8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	85 Cel			8KX8	8K	-40 Cel		MATTE TIN			QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm		10 ms		65536 bit	4.5 V			e3	40	245	.0001 Amp	13.97 mm	150 ns	5
AT28C64B-15TU-T	Microchip Technology	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words		5			8	SMALL OUTLINE, THIN PROFILE			10	.55 mm	85 Cel			8KX8	8K	-40 Cel		MATTE TIN			DUAL			R-PDSO-G28		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm		10 ms		65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE		e3				11.8 mm	150 ns	5
CAT24S64C4ATR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words		5			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			8KX8	8K	-40 Cel		TIN SILVER COPPER			BOTTOM			S-PBGA-B4	1	5.5 V	.35 mm		1 MHz	.85 mm		5 ms	I2C	65536 bit	1.7 V	LG-MAX, WD-MAX, ALSO AVAILABLE 1.6-5.5V OPERATES WITH 0.1MHZ AND 0.4MHZ		e1	30	260		.85 mm
AT28LV010-20JU-051	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		131072 words		3.3			8	CHIP CARRIER				1.27 mm	85 Cel			128KX8	128K	-40 Cel					QUAD			R-PQCC-J32		3.465 V	3.556 mm			11.43 mm		10 ms		1048576 bit	3.135 V				NOT SPECIFIED	NOT SPECIFIED		13.97 mm	200 ns	3
AT28LV010-20JU-235	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	131072 words		3.3			8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	85 Cel			128KX8	128K	-40 Cel		MATTE TIN			QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32		3.465 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm		10 ms		1048576 bit	3.135 V			e3			.00005 Amp	13.97 mm	200 ns	3
AT28LV010-20JU-319	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	131072 words		3.3			8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	85 Cel			128KX8	128K	-40 Cel		MATTE TIN			QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32	3	3.465 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm		10 ms		1048576 bit	3.135 V			e3	40	245	.00005 Amp	13.97 mm	200 ns	3
AT28LV010-20JU-630	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	131072 words		3.3			8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	85 Cel			128KX8	128K	-40 Cel		MATTE TIN			QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32		3.465 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm		10 ms		1048576 bit	3.135 V			e3			.00005 Amp	13.97 mm	200 ns	3
AT28LV010-20TU-235	Microchip Technology	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words		3.3			8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		10	.5 mm	85 Cel			128KX8	128K	-40 Cel		MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G32		3.465 V	1.2 mm	100000 Write/Erase Cycles		8 mm		10 ms		1048576 bit	3.135 V			e3			.00005 Amp	18.4 mm	200 ns	3
AT28LV010-20TU-319	Microchip Technology	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words		3.3			8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		10	.5 mm	85 Cel			128KX8	128K	-40 Cel		MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G32		3.465 V	1.2 mm	100000 Write/Erase Cycles		8 mm		10 ms		1048576 bit	3.135 V			e3			.00005 Amp	18.4 mm	200 ns	3
AT28C256-15JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5			8	CHIP CARRIER				1.27 mm	85 Cel			32KX8	32K	-40 Cel		MATTE TIN			QUAD			R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm		10 ms		262144 bit	4.5 V			e3	40	245		13.97 mm	150 ns	5
MR25H128APDF	Everspin Technologies	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		16384 words		3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel			16KX8	16K	-40 Cel					DUAL			R-PDSO-N8	3	3.6 V	.9 mm		40 MHz	5 mm			SPI	131072 bit	2.7 V							6 mm
AT28C256-15DM/883-815	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class C	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5			8	IN-LINE				2.54 mm	125 Cel			32KX8	32K	-55 Cel		TIN LEAD			DUAL			R-GDIP-T28		5.5 V	5.72 mm			15.24 mm		10 ms		262144 bit	4.5 V			e0				37.215 mm	150 ns	5
AT28C256E-15JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5			8	CHIP CARRIER				1.27 mm	85 Cel			32KX8	32K	-40 Cel		MATTE TIN			QUAD			R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm				262144 bit	4.5 V			e3	40	245		13.97 mm	150 ns	5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.