EEPROM EEPROM 641

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Programming Voltage (V)
25LC640AT-E/SN16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	8192 words	5	8	SMALL OUTLINE	SOP8,.23		200	1.27 mm	125 Cel		8KX8	8K	-40 Cel			DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	5 ms	SPI	65536 bit	2.5 V			.000005 Amp	4.9 mm	5
93LC46B-I/SN15KVAO	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words	5	16	SMALL OUTLINE	SOP8,.23		200	1.27 mm	85 Cel		64X16	64	-40 Cel			DUAL	1		R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	6 ms	MICROWIRE	1024 bit	2.5 V			.000001 Amp	4.9 mm	5
93LC46BT-I/OT15KVAO	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words	5	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		200	.95 mm	85 Cel		64X16	64	-40 Cel			DUAL	1		R-PDSO-G5		5.5 V	1.45 mm	1000000 Write/Erase Cycles	2 MHz	1.63 mm	6 ms	MICROWIRE	1024 bit	2.5 V			.000001 Amp	2.95 mm	5
93LC56CT-E/SN15KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	5	16	SMALL OUTLINE	SOP8,.23	8	200	1.27 mm	125 Cel		128X16	128	-40 Cel	Matte Tin (Sn)		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	3 MHz	3.9 mm	6 ms	MICROWIRE	2048 bit	4.5 V		e3	.000005 Amp	4.9 mm
93LC66AT-I/SN15KVAO	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	512 words	5	8	SMALL OUTLINE	SOP8,.23		200	1.27 mm	85 Cel		512X8	512	-40 Cel			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	6 ms	MICROWIRE	4096 bit	2.5 V	1.8V TO 2.5V @ 1MHz		.000001 Amp	4.9 mm	5
93LC66BT-I/OT15KVAO	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words	5	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		200	.95 mm	85 Cel		256X16	256	-40 Cel			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G5		5.5 V	1.45 mm	1000000 Write/Erase Cycles	2 MHz	1.55 mm	6 ms	MICROWIRE	4096 bit	2.5 V	1.8V TO 2.5V @ 1MHz		.000001 Amp	2.9 mm	5
93LC56B-I/SN15KVAO	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	3	16	SMALL OUTLINE	SOP8,.23		200	1.27 mm	85 Cel		128X16	128	-40 Cel	Matte Tin (Sn)		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	6 ms	MICROWIRE	2048 bit	2.5 V		e3	.000001 Amp	4.9 mm	3
93LC56BT-I/SN15KVAO	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	3	16	SMALL OUTLINE	SOP8,.23		200	1.27 mm	85 Cel		128X16	128	-40 Cel	Matte Tin (Sn)		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	6 ms	MICROWIRE	2048 bit	2.5 V		e3	.000001 Amp	4.9 mm	3
24LC16B-E/SN16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5	8	SMALL OUTLINE	SOP8,.23		200	1.27 mm	125 Cel		2KX8	2K	-40 Cel		1010MMMR	DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	5 ms	I2C	16384 bit	2.5 V			.000005 Amp	4.9 mm	5
24LC16BT-E/MNY16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	2048 words	5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		200	.5 mm	125 Cel		2KX8	2K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010MMMR	DUAL	1	HARDWARE	R-PDSO-N8		5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	5 ms	I2C	16384 bit	2.5 V		e4	.000005 Amp	3 mm	5
24LC16BT-E/OT16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		200	.95 mm	125 Cel		2KX8	2K	-40 Cel		1010MMMR	DUAL	1	HARDWARE	R-PDSO-G5		5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.63 mm	5 ms	I2C	16384 bit	2.5 V			.000005 Amp	2.95 mm	5
24CS512-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words		8	SMALL OUTLINE	SOP8,.19		200	.65 mm	85 Cel	OPEN-DRAIN	64KX8	64K	-40 Cel		1010DDDR	DUAL	1	HARDWARE/SOFTWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	3.4 MHz	3 mm	5 ms	I2C	524288 bit	2.5 V			.000003 Amp	3 mm
24CS512-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	65536 words		8	IN-LINE	DIP8,.3		200	2.54 mm	85 Cel	OPEN-DRAIN	64KX8	64K	-40 Cel	Matte Tin (Sn)	1010DDDR	DUAL	1	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	3.4 MHz	7.62 mm	5 ms	I2C	524288 bit	2.5 V		e3	.000003 Amp	9.271 mm
24CS512-I/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words		8	SMALL OUTLINE	SOP8,.3		200	1.27 mm	85 Cel	OPEN-DRAIN	64KX8	64K	-40 Cel		1010DDDR	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	2.03 mm	1000000 Write/Erase Cycles	3.4 MHz	5.25 mm	5 ms	I2C	524288 bit	2.5 V			.000003 Amp	5.26 mm
24CS512-E/P	Microchip Technology	EEPROM		8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	65536 words		8	IN-LINE	DIP8,.3		200	2.54 mm	125 Cel		64KX8	64K	-40 Cel		1010DDDR	DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	5 ms	I2C	524288 bit	1.7 V			.000003 Amp	9.271 mm
24CS512-E/SM	Microchip Technology	EEPROM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words		8	SMALL OUTLINE	SOP8,.3		200	1.27 mm	125 Cel		64KX8	64K	-40 Cel		1010DDDR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	2.03 mm	1000000 Write/Erase Cycles	1 MHz	5.25 mm	5 ms	I2C	524288 bit	1.7 V			.000003 Amp	5.26 mm
24CS512T-E/MS66KVAO	Microchip Technology	EEPROM		8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		200	.65 mm	125 Cel		64KX8	64K	-40 Cel		1010DDDR	DUAL		HARDWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	5 ms	I2C	524288 bit	1.7 V			.000003 Amp	3 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.