EEPROM EEPROM 641

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
CAT24C02WIG	Catalyst Semiconductor	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL			1 mA	256 words			2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel			256X8	256	-40 Cel				1010DDDR		DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit								.000002 Amp
M24M01-RCS6TP/A	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			5 mA	131072 words			2/5	8	GRID ARRAY	BGA8,3X3,47/24	EEPROMs	40	.6 mm	85 Cel			128KX8	128K	-40 Cel				1010DDMR		BOTTOM		HARDWARE	S-PBGA-B8				1000000 Write/Erase Cycles			Not Qualified		I2C	1048576 bit								.000001 Amp
M95M01-RCS6TP/A	STMicroelectronics	EEPROM	INDUSTRIAL	8	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			5 mA	131072 words			2/5	8	GRID ARRAY	BGA8,3X3,47/24	EEPROMs	40	.6 mm	85 Cel			128KX8	128K	-40 Cel						BOTTOM		HARDWARE/SOFTWARE	S-PBGA-B8				1000000 Write/Erase Cycles			Not Qualified		SPI	1048576 bit								.000003 Amp
PCA24S08D/DG,118	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL			1 mA	1024 words			3/3.3	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel			1KX8	1K	-40 Cel				10101MMR		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8				100000 Write/Erase Cycles			Not Qualified		I2C	8192 bit								.000015 Amp
24FC64-I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		3 mA	8192 words	4.5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel			MATTE TIN	1010DDDR		DUAL	1	HARDWARE	S-PDSO-N8		5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	ALSO OPERATES AT 1.7V TO 2.5V @ 0.4MHZ		e3				.000001 Amp	3 mm		4.5
24FC64T-I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		3 mA	8192 words	4.5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel			MATTE TIN	1010DDDR		DUAL	1	HARDWARE	S-PDSO-N8		5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	ALSO OPERATES AT 1.7V TO 2.5V @ 0.4MHZ		e3				.000001 Amp	3 mm		4.5
M95320-DRMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL			5 mA	4096 words			2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel			4KX8	4K	-40 Cel						DUAL		HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		SPI	32768 bit								.000001 Amp
M95320-DRDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL			5 mA	4096 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.635 mm	85 Cel			4KX8	4K	-40 Cel						DUAL		HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		SPI	32768 bit								.000001 Amp
M95320-DRMC6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL			5 mA	4096 words			2/5	8	SMALL OUTLINE	SOLCC8,.11,20	EEPROMs	40	.5 mm	85 Cel			4KX8	4K	-40 Cel			NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1			1000000 Write/Erase Cycles			Not Qualified		SPI	32768 bit				e4	30	260		.000001 Amp
LE24512AQF-AH	Onsemi	EEPROM	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL			5 mA	65536 words			1.8/3.3	8	SMALL OUTLINE	SOLCC8,.12,20	EEPROMs	20	.5 mm	85 Cel			64KX8	64K	-40 Cel			MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDSO-N8	3			1000000 Write/Erase Cycles			Not Qualified		I2C	524288 bit				e3	30	260		.000002 Amp
LE24CBK23MC-AH	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL			8 mA	256 words			3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	20	1.27 mm	85 Cel			256X8	256	-40 Cel			MATTE TIN			DUAL	2	HARDWARE	R-PDSO-G8	3			1000000 Write/Erase Cycles			Not Qualified			4096 bit				e3	30	260		.000005 Amp
TC58NVG1S3ETA00	Toshiba	EEPROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	128K	30 mA	268435456 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	Flash Memories		.5 mm	70 Cel			256MX8	256M	0 Cel	2K	YES	TIN		YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			2147483648 bit	2.7 V		2K	e3		260	NAND TYPE	.00005 Amp	18.4 mm	25 ns	3	NO
BR24T02FV-WGE2	ROHM	EEPROM	INDUSTRIAL	8	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2 mA	256 words			1.8/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	SSOP8,.25	EEPROMs	40	.65 mm	85 Cel			256X8	256	-40 Cel				1010DDDR		DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.35 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	1.6 V	SEATED HT-CALCULATED			NOT SPECIFIED	NOT SPECIFIED		.000002 Amp	4.4 mm
CAT24M01LI-G	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		3 mA	131072 words	3.3		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel			128KX8	128K	-40 Cel			NICKEL PALLADIUM GOLD	1010DDMR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	SPI	1048576 bit	1.8 V			e4				.000002 Amp	9.27 mm
CAT24M01WE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		3 mA	131072 words	3.3		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel			128KX8	128K	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDMR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	SPI	1048576 bit	2.5 V			e4	40	260		.000005 Amp	4.9 mm
CAT24M01YE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		3 mA	131072 words	3.3		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	125 Cel			128KX8	128K	-40 Cel			NICKEL PALLADIUM GOLD	1010DDMR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	SPI	1048576 bit	2.5 V			e4	30	260		.000005 Amp	4.4 mm
11AA020T-I/CS16K	Microchip Technology	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	BALL	SERIAL	SYNCHRONOUS		5 mA	256 words	5	NO	2/5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,35/16	EEPROMs	200	.4 mm	85 Cel	NO	TOTEM POLE	256X8	256	-40 Cel			TIN SILVER COPPER		NO	BOTTOM	1	SOFTWARE	R-PBGA-B4		5.5 V	.55 mm	1000000 Write/Erase Cycles	3 MHz		Not Qualified	10 ms	1-WIRE	2048 bit	1.8 V			e1				.000005 Amp
11AA160T-I/CS16K	Microchip Technology	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	BALL	SERIAL	SYNCHRONOUS		5 mA	2048 words	5	NO	2/5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,35/16	EEPROMs	200	.4 mm	85 Cel	NO	TOTEM POLE	2KX8	2K	-40 Cel			TIN SILVER COPPER		NO	BOTTOM	1	SOFTWARE	R-PBGA-B4		5.5 V	.55 mm	1000000 Write/Erase Cycles	3 MHz		Not Qualified	10 ms	1-WIRE	16384 bit	1.8 V			e1				.000005 Amp
24LC1026-E/P	Microchip Technology	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS		5 mA	131072 words	4.5			8	IN-LINE	DIP8,.3		200	2.54 mm	125 Cel			128KX8	128K	-40 Cel			MATTE TIN	1010DDMR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	1048576 bit	2.5 V			e3				.000005 Amp	9.271 mm		4.5
24LC1026T-E/SM	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		5 mA	131072 words	4.5			8	SMALL OUTLINE	SOP8,.3		200	1.27 mm	125 Cel			128KX8	128K	-40 Cel			MATTE TIN	1010DDMR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.25 mm	Not Qualified	5 ms	I2C	1048576 bit	2.5 V			e3	40	260		.000005 Amp	5.26 mm		4.5
25A512-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		5 mA	65536 words	2.5			8	SMALL OUTLINE	SOP8,.23		200	1.27 mm	85 Cel			64KX8	64K	-40 Cel			MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	3 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	524288 bit	2 V	1.7V TO 2V @ 2MHz		e3	30	260		.00001 Amp	4.9 mm		2.5
25LC128T-I/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		5 mA	16384 words	5		3/5	8	SMALL OUTLINE	SOP8,.3	EEPROMs	200	1.27 mm	85 Cel			16KX8	16K	-40 Cel			MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	10 MHz	5.25 mm	Not Qualified	5 ms	SPI	131072 bit	2.5 V			e3	40	260		.000001 Amp	5.26 mm		5
CAT24C512LI-G	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		2.5 mA	65536 words	3.3		2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel	NO		64KX8	64K	-40 Cel			NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	524288 bit	1.8 V			e4				.000002 Amp	9.27 mm
M95160-FDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		3 mA	2048 words	5		1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.65 mm	85 Cel			2KX8	2K	-40 Cel						DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	16384 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		.000001 Amp	4.4 mm
M24C16-FMC5TG	STMicroelectronics	EEPROM	OTHER	8	HVQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1 mA	2048 words	1.8		1.8/5	8	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	EEPROMs	200	.5 mm	85 Cel		OPEN-DRAIN	2KX8	2K	-20 Cel			NICKEL PALLADIUM GOLD	1010DDDR		DUAL			R-XDSO-N8	1	5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V			e4	30	260		.000001 Amp	3 mm		1.8
CAT24C256XE-T2	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		3 mA	32768 words	5		3/5	8	SMALL OUTLINE	SOP8,.3	EEPROMs	100	1.27 mm	125 Cel			32KX8	32K	-40 Cel			TIN	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	3	5.5 V	2.03 mm	1000000 Write/Erase Cycles	1 MHz	5.23 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V	100 YEAR DATA RETENTION		e3				.000002 Amp	5.255 mm
CAT24C32TSI-T3	Onsemi	EEPROM	INDUSTRIAL	5	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2 mA	4096 words	5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	85 Cel			4KX8	4K	-40 Cel				1010DDDR		DUAL		HARDWARE	R-PDSO-G5		5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	1.5 mm	Not Qualified	5 ms	I2C	32768 bit	1.7 V	100 YEAR DATA RETENTION		e3	NOT SPECIFIED	NOT SPECIFIED		.000001 Amp	3 mm
CAT24C02LI-GA	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		2 mA	256 words	3.3		1.8/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel			256X8	256	-40 Cel			NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e4				.000001 Amp	9.27 mm
CAT24C02WE-GT3A	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2 mA	256 words	3.3		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel			256X8	256	-40 Cel			NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e4	30	260		.000005 Amp	4.9 mm
CAT24C02YE-GT3A	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2 mA	256 words	3.3		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	125 Cel			256X8	256	-40 Cel			NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e4	30	260		.000005 Amp	4.4 mm
CAT24C02YI-GT3A	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2 mA	256 words	3.3		1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel			256X8	256	-40 Cel			NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e4	30	260		.000001 Amp	4.4 mm
CAT24C02ZI-GT3A	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2 mA	256 words	3.3		1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.65 mm	85 Cel			256X8	256	-40 Cel			NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	S-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e4				.000001 Amp	3 mm
CAT24C08HU4E-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		2 mA	1024 words	3.3		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	100	.5 mm	125 Cel			1KX8	1K	-40 Cel			NICKEL PALLADIUM GOLD	1010DMMR		DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	8192 bit	1.8 V			e4	30	260		.000005 Amp	3 mm
CAT25512YE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		3 mA	65536 words	5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	125 Cel			64KX8	64K	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	524288 bit	2.5 V	100 YEAR DATA RETENTION		e4	NOT SPECIFIED	NOT SPECIFIED		.000003 Amp	4.4 mm
CAV24C16YE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2 mA	16384 words	3.6			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SOP8,.25		100	.65 mm	125 Cel			16KX1	16K	-40 Cel			NICKEL PALLADIUM GOLD			DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V	100 YEAR DATA RETENTION		e4	30	260		.000005 Amp	4.4 mm
M95256-DRDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		3 mA	32 words	5		5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.65 mm	85 Cel			32X8	32	-40 Cel						DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	256 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED		.000003 Amp	4.4 mm	80 ns
M95256-DRMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		3 mA	32 words	5		5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel			32X8	32	-40 Cel						DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	256 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED		.000003 Amp	4.9 mm	80 ns
M95256RMB6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		3 mA	32 words			2/5	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	40	.5 mm	85 Cel			32X8	32	-40 Cel						DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	5 MHz	2 mm	Not Qualified	5 ms	SPI	256 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED		.000003 Amp	3 mm	80 ns
S-93C56BD0II8T1U	Seiko Instruments Usa	EEPROM	INDUSTRIAL	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			128 words	5			16	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH			100	.65 mm	85 Cel			128X16	128	-40 Cel			TIN			DUAL			R-PDSO-G8		5.5 V	.8 mm		2 MHz	2.8 mm			3-WIRE	2048 bit	4.5 V	100 YEARS DATA RETENTION		e3					2.9 mm
93LC66AT-I/MNY	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS		2 mA	512 words	5	YES		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		200	.5 mm	85 Cel	NO	TOTEM POLE	512X8	512	-40 Cel			NICKEL PALLADIUM GOLD		YES	DUAL	1	SOFTWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	2 MHz	2 mm		6 ms	MICROWIRE	4096 bit	2.5 V			e4	40	260		.000001 Amp	3 mm
93LC66BT-I/MNY	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS		2 mA	256 words	5	YES		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		200	.5 mm	85 Cel	NO	TOTEM POLE	256X16	256	-40 Cel			NICKEL PALLADIUM GOLD		YES	DUAL	1	SOFTWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	2 MHz	2 mm		6 ms	MICROWIRE	4096 bit	2.5 V			e4	40	260		.000001 Amp	3 mm
BR24T256-W	ROHM	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		2.5 mA	32768 words			1.8/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel			32KX8	32K	-40 Cel			MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDIP-T8	1	5.5 V	4.21 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	262144 bit	1.6 V	SEATED HT-CALCULATED		e3				.000002 Amp	9.3 mm
M95160-RCS6TP/S	STMicroelectronics	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		3 mA	2048 words			2/5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8,3X3,16	EEPROMs	40	.4 mm	85 Cel			2KX8	2K	-40 Cel			MATTE TIN			BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	5 MHz	1.35 mm	Not Qualified	5 ms	SPI	16384 bit	1.8 V			e3				.000001 Amp	1.365 mm
PCA24S08AD,118	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1 mA	1048576 words			3/3.3	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel			1MX8	1M	-40 Cel			MATTE TIN	10101MMR		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified		I2C	8388608 bit	2.5 V			e3	30	260		.000018 Amp	4.9 mm
PCA24S08ADP,118	NXP Semiconductors	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1 mA	1048576 words			3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	10	.65 mm	85 Cel			1MX8	1M	-40 Cel			MATTE TIN	10101MMR		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	1	3.6 V	1.1 mm	100000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified		I2C	8388608 bit	2.5 V			e3	30	260		.000018 Amp	3 mm
CAT24C01YI-G	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2 mA	1024 words	3.3		2/5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel			1KX1	1K	-40 Cel			NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	1024 bit	1.7 V			e4		260		.000001 Amp	4.4 mm
CAT24C02YI-G	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2 mA	256 words	3.3		1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel			256X8	256	-40 Cel			NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e4		260		.000001 Amp	4.4 mm
CAT25010LI-GD	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		2 mA	128 words	5		2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel			128X8	128	-40 Cel			NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified	5 ms	SPI	1024 bit	2.5 V			e4		260		.000002 Amp	9.27 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.