Xilinx EEPROM 198

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length
XC17V02VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	2097152 words	COMMON	3.3	3.3	1	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	OTP ROMs	.8 mm	85 Cel	3-STATE	2MX1	2M	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	15 MHz	10 mm	Not Qualified	2097152 bit	3 V	e0	30	240	.001 Amp	10 mm
XC17V04PC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm	15 MHz	8.9662 mm	Not Qualified	4194304 bit	3 V	e0	30	225	.001 Amp	8.9662 mm
XC17V04PC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm	15 MHz	8.9662 mm	Not Qualified	4194304 bit	3 V	e0	30	225	.001 Amp	8.9662 mm
XC17V04PC44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs	1.27 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J44	3	3.6 V	4.57 mm	15 MHz	16.5862 mm	Not Qualified	4194304 bit	3 V	e0	30	225	.001 Amp	16.5862 mm
XC17V04PC44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs	1.27 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J44	3	3.6 V	4.57 mm	15 MHz	16.5862 mm	Not Qualified	4194304 bit	3 V	e0	30	225	.001 Amp	16.5862 mm
XC17V04VQ44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	3.3	3.3	1	FLATPACK, THIN PROFILE	QFP44,.47SQ,32	OTP ROMs	.8 mm	70 Cel	3-STATE	4MX1	4M	0 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	15 MHz	10 mm	Not Qualified	4194304 bit	3 V	e0	30	240	.001 Amp	10 mm
XC17V04VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	4194304 words	COMMON	3.3	3.3	1	FLATPACK, THIN PROFILE	QFP44,.47SQ,32	OTP ROMs	.8 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	15 MHz	10 mm	Not Qualified	4194304 bit	3 V	e0	30	240	.001 Amp	10 mm
XC17V08PC44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	1048576 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs	1.27 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J44	3	3.6 V	4.57 mm	20 MHz	16.5862 mm	Not Qualified	8388608 bit	3 V	e0	30	225	.001 Amp	16.5862 mm
XC17V08PC44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	1048576 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs	1.27 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J44	3	3.6 V	4.57 mm	20 MHz	16.5862 mm	Not Qualified	8388608 bit	3 V	e0	30	225	.001 Amp	16.5862 mm
XC17V08VQ44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	1048576 words	COMMON	3.3	3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	OTP ROMs	.8 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	20 MHz	10 mm	Not Qualified	8388608 bit	3 V	e0	30	240	.001 Amp	10 mm
XC17V08VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	1048576 words	COMMON	3.3	3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	OTP ROMs	.8 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	20 MHz	10 mm	Not Qualified	8388608 bit	3 V	e0	30	240	.001 Amp	10 mm
XC17V16PC44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J44	3	3.6 V	4.57 mm	20 MHz	16.5862 mm	Not Qualified	16777216 bit	3 V	e0	30	225	.001 Amp	16.5862 mm
XC17V16PC44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs	1.27 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J44	3	3.6 V	4.57 mm	20 MHz	16.5862 mm	Not Qualified	16777216 bit	3 V	e0	30	225	.001 Amp	16.5862 mm
XC17V16VQ44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3	3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	OTP ROMs	.8 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	20 MHz	10 mm	Not Qualified	16777216 bit	3 V	e0	30	240	.001 Amp	10 mm
XC17V16VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3	3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	OTP ROMs	.8 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	20 MHz	10 mm	Not Qualified	16777216 bit	3 V	e0	30	240	.001 Amp	10 mm
XC17S100APD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	15 mA	781216 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	781216X1	781216	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		7.62 mm	Not Qualified	781216 bit	3 V	e0	30	225	.001 Amp	9.3599 mm
XC17S100APD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	15 mA	781216 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	781216X1	781216	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		7.62 mm	Not Qualified	781216 bit	3 V	e0	30	225	.001 Amp	9.3599 mm
XC17S100ASO20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	781216 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs	1.27 mm	70 Cel	3-STATE	781216X1	781216	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm		7.5 mm	Not Qualified	781216 bit	3 V	e0	30	225	.001 Amp	12.8 mm
XC17S100ASO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	781216 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs	1.27 mm	85 Cel	3-STATE	781216X1	781216	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm		7.5 mm	Not Qualified	781216 bit	3 V	e0	30	225	.001 Amp	12.8 mm
XC17S100AVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	781216 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	781216X1	781216	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	781216 bit	3 V	e0	30	225	.001 Amp	4.9 mm
XC17S100AVO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	781216 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs	1.27 mm	85 Cel	3-STATE	781216X1	781216	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	781216 bit	3 V	e0	30	225	.001 Amp	4.9 mm
XC17S150APD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	1040096 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	1040096X1	1040096	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		7.62 mm	Not Qualified	1040096 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S150APD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	1040096 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	1040096X1	1040096	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		7.62 mm	Not Qualified	1040096 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S150ASO20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	1040096 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs	1.27 mm	70 Cel	3-STATE	1040096X1	1040096	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm		7.5 mm	Not Qualified	1040096 bit	3 V	e0	30	225	.00005 Amp	12.8 mm
XC17S150ASO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	1040096 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs	1.27 mm	85 Cel	3-STATE	1040096X1	1040096	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm		7.5 mm	Not Qualified	1040096 bit	3 V	e0	30	225	.00005 Amp	12.8 mm
XC17S150AVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	1040096 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	1040096X1	1040096	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	1040096 bit	3 V	e0	30	225	.00005 Amp	4.9 mm
XC17S15APD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	197696 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	197696X1	197696	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		7.62 mm	Not Qualified	197696 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S15APD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	197696 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	197696X1	197696	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		7.62 mm	Not Qualified	197696 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S15ASO20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	197696 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs	1.27 mm	70 Cel	3-STATE	197696X1	197696	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm		7.5 mm	Not Qualified	197696 bit	3 V	e0	30	225	.00005 Amp	12.8 mm
XC17S15AVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	197696 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	197696X1	197696	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	197696 bit	3 V	e0	30	225	.00005 Amp	4.9 mm
XC17S15AVO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	197696 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs	1.27 mm	85 Cel	3-STATE	197696X1	197696	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	197696 bit	3 V	e0	30	225	.00005 Amp	4.9 mm
XC17S200APD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	15 mA	1335840 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	1335840X1	1335840	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		7.62 mm	Not Qualified	1335840 bit	3 V	e0	30	225	.001 Amp	9.3599 mm
XC17S200APD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	15 mA	1335840 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	1335840X1	1335840	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		7.62 mm	Not Qualified	1335840 bit	3 V	e0	30	225	.001 Amp	9.3599 mm
XC17S200AVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	1335840 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	1335840X1	1335840	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	1335840 bit	3 V	e0	30	225	.001 Amp	4.9 mm
XC17S200AVO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	1335840 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs	1.27 mm	85 Cel	3-STATE	1335840X1	1335840	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	1335840 bit	3 V	e0	30	225	.001 Amp	4.9 mm
XC17S200AVQ44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	1335840 words	COMMON	3.3	3.3	1	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	OTP ROMs	.8 mm	70 Cel	3-STATE	1335840X1	1335840	0 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm		10 mm	Not Qualified	1335840 bit	3 V	e0			.001 Amp	10 mm
XC17S30APD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	336768 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	336768X1	336768	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		7.62 mm	Not Qualified	336768 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S30APD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	336768 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	336768X1	336768	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		7.62 mm	Not Qualified	336768 bit	3 V	e0	30	225	.00005 Amp	9.3599 mm
XC17S30ASO20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	336768 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs	1.27 mm	70 Cel	3-STATE	336768X1	336768	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm		7.5 mm	Not Qualified	336768 bit	3 V	e0	30	225	.00005 Amp	12.8 mm
XC17S30ASO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	336768 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs	1.27 mm	85 Cel	3-STATE	336768X1	336768	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm		7.5 mm	Not Qualified	336768 bit	3 V	e0	30	225	.00005 Amp	12.8 mm
XC17S30AVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	336768 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	336768X1	336768	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	336768 bit	3 V	e0	30	225	.00005 Amp	4.9 mm
XC17S30AVO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	336768 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs	1.27 mm	85 Cel	3-STATE	336768X1	336768	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	336768 bit	3 V	e0	30	225	.00005 Amp	4.9 mm
XC17S50APD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	15 mA	559200 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	70 Cel	3-STATE	559200X1	559200	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		7.62 mm	Not Qualified	559200 bit	3 V	e0	30	225	.001 Amp	9.3599 mm
XC17S50APD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	15 mA	559200 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	559200X1	559200	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm		7.62 mm	Not Qualified	559200 bit	3 V	e0	30	225	.001 Amp	9.3599 mm
XC17S50ASO20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	559200 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs	1.27 mm	70 Cel	3-STATE	559200X1	559200	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm		7.5 mm	Not Qualified	559200 bit	3 V	e0	30	225	.001 Amp	12.8 mm
XC17S50ASO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	559200 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs	1.27 mm	85 Cel	3-STATE	559200X1	559200	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm		7.5 mm	Not Qualified	559200 bit	3 V	e0	30	225	.001 Amp	12.8 mm
XC17S50AVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	559200 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs	1.27 mm	70 Cel	3-STATE	559200X1	559200	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	559200 bit	3 V	e0	30	225	.001 Amp	4.9 mm
XC17S50AVO8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	559200 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs	1.27 mm	85 Cel	3-STATE	559200X1	559200	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm		3.9 mm	Not Qualified	559200 bit	3 V	e0	30	225	.001 Amp	4.9 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.