Xilinx EEPROM 198

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
XQ18V04VQ44N	Xilinx	CONFIGURATION MEMORY	MILITARY	44	TQFP	SQUARE	40k Rad(Si)	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	50 mA	524288 words		3.3	2.5/3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	10	.8 mm	125 Cel		512KX8	512K	-55 Cel	Tin/Lead (Sn85Pb15)	QUAD		S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	20 MHz	10 mm	Not Qualified	4194304 bit	3 V		e0	30	240	NOR TYPE	.02 Amp	10 mm
XCCACE128-I	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	50		RECTANGULAR		UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	SERIAL	SYNCHRONOUS		8388608 words		3.3		16	MICROELECTRONIC ASSEMBLY					60 Cel		8MX16	8M	0 Cel		UNSPECIFIED		R-XXMA-X50		3.6 V	3.3 mm		33 MHz	36 mm	Not Qualified	134217728 bit	3 V							42.8 mm
XC17S15ASO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	197696 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	85 Cel	3-STATE	197696X1	197696	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL		R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified	197696 bit	3 V		e0	30	225		.00005 Amp	12.8 mm
XCF01SVO20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	1048576 words		3.3	1.8/3.3,3	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	Flash Memories	20	.65 mm	85 Cel		1MX1	1M	-40 Cel	TIN LEAD	DUAL		R-PDSO-G20	3	3.6 V	1.19 mm	20000 Write/Erase Cycles		4.4 mm	Not Qualified	1048576 bit	3 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e0	30	225	NOR TYPE	.001 Amp	6.5024 mm
XCF02SVO20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	2097152 words		3.3	1.8/3.3,3.3	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	Flash Memories	20	.65 mm	85 Cel		2MX1	2M	-40 Cel	TIN LEAD	DUAL		R-PDSO-G20	3	3.6 V	1.19 mm	20000 Write/Erase Cycles		4.4 mm	Not Qualified	2097152 bit	3 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e0	30	225	NOR TYPE	.001 Amp	6.5024 mm
XCF04SVO20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	4194304 words		3.3	1.8/3.3,3.3	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	Flash Memories		.65 mm	85 Cel		4MX1	4M	-40 Cel	TIN LEAD	DUAL		R-PDSO-G20	3	3.6 V	1.19 mm		33 MHz	4.4 mm	Not Qualified	4194304 bit	3 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e0	30	240	NOR TYPE	.001 Amp	6.5024 mm
XCF08PFS48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TFBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	40 mA	8388608 words		1.8	1.5/3.3,1.8	1	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	Flash Memories	20	.8 mm	85 Cel		8MX1	8M	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	3	2 V	1.2 mm	20000 Write/Erase Cycles	33 MHz	8 mm	Not Qualified	8388608 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e0	30	240	NOR TYPE	.001 Amp	9 mm
XCF08PVO48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	40 mA	8388608 words		1.8	1.5/3.3,1.8	1	SMALL OUTLINE	TSSOP48,.8,20	Flash Memories		.5 mm	85 Cel		8MX1	8M	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL		R-PDSO-G48	3	2 V	1.2 mm	20000 Write/Erase Cycles	33 MHz	12 mm	Not Qualified	8388608 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e0	30	225	NOR TYPE	.001 Amp	18.45 mm
XCF16PFS48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TFBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	40 mA	16777216 words		1.8	1.5/3.3,1.8	1	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	Flash Memories	20	.8 mm	85 Cel		16MX1	16M	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	3	2 V	1.2 mm	20000 Write/Erase Cycles		8 mm	Not Qualified	16777216 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e0	30	240	NOR TYPE		9 mm
XCF32PFS48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TFBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	40 mA	33554432 words		1.8	1.5/3.3,1.8	1	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	Flash Memories	20	.8 mm	85 Cel		32MX1	32M	-40 Cel	TIN LEAD	BOTTOM		R-PBGA-B48	3	2 V	1.2 mm	20000 Write/Erase Cycles		8 mm	Not Qualified	33554432 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e0	30	240	NOR TYPE		9 mm
XC18V02PC44C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL/SERIAL	SYNCHRONOUS		262144 words		3.3		8	CHIP CARRIER				1.27 mm	85 Cel		256KX8	256K	-40 Cel	TIN LEAD	QUAD		S-PQCC-J44	3	3.6 V	4.572 mm			16.5862 mm	Not Qualified	2097152 bit	3 V		e0					16.5862 mm	20 ns
XCF01SVOG20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	1048576 words		3.3	1.8/3.3,3.3	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	Flash Memories	20	.65 mm	85 Cel		1MX1	1M	-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G20	3	3.6 V	1.19 mm	20000 Write/Erase Cycles		4.4 mm	Not Qualified	1048576 bit	3 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e3	30	260	NOR TYPE	.001 Amp	6.5024 mm
XCF02SVOG20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	2097152 words		3.3	1.8/3.3,3.3	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	Flash Memories	20	.65 mm	85 Cel		2MX1	2M	-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G20	3	3.6 V	1.19 mm	20000 Write/Erase Cycles		4.4 mm	Not Qualified	2097152 bit	3 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e3	30	260	NOR TYPE	.001 Amp	6.5024 mm
XCF08PFSG48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TFBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	40 mA	8388608 words		1.8	1.5/3.3,1.8	1	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	Flash Memories		.8 mm	85 Cel		8MX1	8M	-40 Cel	Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)	BOTTOM		R-PBGA-B48	3	2 V	1.2 mm	20000 Write/Erase Cycles	33 MHz	8 mm	Not Qualified	8388608 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e2	30	260	NOR TYPE	.001 Amp	9 mm
XCF08PVOG48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TSSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	40 mA	8388608 words		1.8	1.5/3.3,1.8	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	Flash Memories		.5 mm	85 Cel		8MX1	8M	-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G48	3	2 V	1.2 mm	20000 Write/Erase Cycles	33 MHz	12 mm	Not Qualified	8388608 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e3	30	260	NOR TYPE	.001 Amp	18.45 mm
XCF16PFSG48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TFBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	40 mA	16777216 words		1.8	1.5/3.3,1.8	1	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	Flash Memories	20	.8 mm	85 Cel		16MX1	16M	-40 Cel	Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)	BOTTOM		R-PBGA-B48	3	2 V	1.2 mm	20000 Write/Erase Cycles		8 mm	Not Qualified	16777216 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e2	30	260	NOR TYPE		9 mm
XCF16PVOG48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TSSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	40 mA	16777216 words		1.8	1.5/3.3,1.8	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	Flash Memories	20	.5 mm	85 Cel		16MX1	16M	-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G48	3	2 V	1.2 mm	20000 Write/Erase Cycles		12 mm	Not Qualified	16777216 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e3	30	260	NOR TYPE		18.45 mm
XCF32PFSG48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TFBGA	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	40 mA	33554432 words		1.8	1.5/3.3,1.8	1	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	Flash Memories	20	.8 mm	85 Cel	3-STATE	32MX1	32M	-40 Cel	Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)	BOTTOM	HARDWARE	R-PBGA-B48	3	2 V	1.2 mm	20000 Write/Erase Cycles	50 MHz	8 mm	Not Qualified	33554432 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e2	30	260	NOR TYPE		9 mm		1.8
XCF32PVOG48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TSSOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	40 mA	33554432 words		1.8	1.5/3.3,1.8	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	Flash Memories	20	.5 mm	85 Cel		32MX1	32M	-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G48	3	2 V	1.2 mm	20000 Write/Erase Cycles		12 mm	Not Qualified	33554432 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL	e3	30	260	NOR TYPE	.001 Amp	18.45 mm
XC17S100AVOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	781216 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	781216X1	781216	0 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified	781216 bit	3 V		e3	30	260		.001 Amp	4.9 mm
XC17S15AVOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	197696 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	197696X1	197696	0 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified	197696 bit	3 V		e3	30	260		.001 Amp	4.9 mm
XC17S200AVOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	1335840 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	1335840X1	1335840	0 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified	1335840 bit	3 V		e3	30	260		.001 Amp	4.9 mm
XC17S200AVOG8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	1335840 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs		1.27 mm	85 Cel	3-STATE	1335840X1	1335840	-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified	1335840 bit	3 V		e3	30	260		.001 Amp	4.9 mm
XC17S50AVOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	559200 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	559200X1	559200	0 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified	559200 bit	3 V		e3	30	260		.001 Amp	4.9 mm
XC1736EVOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	36288 words	COMMON	5	5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	36288X1	36288	0 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G8	3	5.25 V	1.1938 mm		10 MHz	3.937 mm	Not Qualified	36288 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	260		.00005 Amp	4.9276 mm
XC1765ELVOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G8	3	3.6 V	1.1938 mm		2.5 MHz	3.937 mm	Not Qualified	65536 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	260		.00005 Amp	4.9276 mm
XC18V04VQG44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	524288 words		3.3	2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	20	.8 mm	85 Cel		512KX8	512K	-40 Cel	Matte Tin (Sn)	QUAD		S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	20 MHz	10 mm	Not Qualified	4194304 bit	3 V		e3	30	260	NOR TYPE	.01 Amp	10 mm	20 ns
XC18V512VQG44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	65536 words		3.3	2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	20	.8 mm	85 Cel		64KX8	64K	-40 Cel	Matte Tin (Sn)	QUAD		S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified	524288 bit	3 V		e3	30	260	NOR TYPE	.01 Amp	10 mm	15 ns
XC18V01VQG44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words		3.3	2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	20	.8 mm	85 Cel		128KX8	128K	-40 Cel	Matte Tin (Sn)	QUAD		S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified	1048576 bit	3 V		e3	30	260	NOR TYPE	.01 Amp	10 mm	15 ns
XC18V02VQG44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	262144 words		3.3	2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	20	.8 mm	85 Cel		256KX8	256K	-40 Cel	Matte Tin (Sn)	QUAD		S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	20 MHz	10 mm	Not Qualified	2097152 bit	3 V		e3	30	260	NOR TYPE	.01 Amp	10 mm	20 ns
XC17128EPDG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	128KX1	128K	0 Cel	Matte Tin (Sn)	DUAL		R-PDIP-T8	1	5.25 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified	131072 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	250		.00005 Amp	9.3599 mm
XC17256EPCG20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	10 mA	262144 words	COMMON	5	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Matte Tin (Sn)	QUAD		S-PQCC-J20	3	5.25 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified	262144 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	245		.00005 Amp	8.9662 mm
XC17256EPDG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	262144 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Matte Tin (Sn)	DUAL		R-PDIP-T8	1	5.25 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified	262144 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	250		.00005 Amp	9.3599 mm
XC17S200APDG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	15 mA	1335840 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	1335840X1	1335840	0 Cel	Matte Tin (Sn)	DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified	1335840 bit	3 V		e3	30	250		.001 Amp	9.3599 mm
XC17S200APDG8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	15 mA	1335840 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	1335840X1	1335840	-40 Cel	Matte Tin (Sn)	DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified	1335840 bit	3 V		e3	30	250		.001 Amp	9.3599 mm
XC17S50APDG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	15 mA	559200 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	559200X1	559200	0 Cel	Matte Tin (Sn)	DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified	559200 bit	3 V		e3	30	250		.001 Amp	9.3599 mm
XC18V01PCG20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	20	1.27 mm	85 Cel		128KX8	128K	-40 Cel	Matte Tin (Sn)	QUAD		S-PQCC-J20	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	33 MHz	8.9662 mm	Not Qualified	1048576 bit	3 V		e3	30	245	NOR TYPE	.01 Amp	8.9662 mm	15 ns
XC18V01SOG20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words		3.3	2.5/3.3,3.3	8	SMALL OUTLINE	SOP20,.4	Flash Memories	20	1.27 mm	85 Cel		128KX8	128K	-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G20	3	3.6 V	2.6416 mm	20000 Write/Erase Cycles	33 MHz	7.5184 mm	Not Qualified	1048576 bit	3 V		e3	30	260	NOR TYPE	.01 Amp	12.827 mm	15 ns
XC18V02PCG44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	262144 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	20	1.27 mm	85 Cel		256KX8	256K	-40 Cel	Matte Tin (Sn)	QUAD		S-PQCC-J44	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	20 MHz	16.5862 mm	Not Qualified	2097152 bit	3 V		e3	30	245	NOR TYPE	.01 Amp	16.5862 mm	20 ns
XC18V04PCG44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	524288 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel	Matte Tin (Sn)	QUAD		S-PQCC-J44	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	20 MHz	16.5862 mm	Not Qualified	4194304 bit	3 V		e3	30	245	NOR TYPE	.01 Amp	16.5862 mm	20 ns
XC18V512PCG20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	65536 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	20	1.27 mm	85 Cel		64KX8	64K	-40 Cel	Matte Tin (Sn)	QUAD		S-PQCC-J20	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	33 MHz	8.9662 mm	Not Qualified	524288 bit	3 V		e3	30	245	NOR TYPE	.01 Amp	8.9662 mm	15 ns
XC18V512SOG20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	65536 words		3.3	2.5/3.3,3.3	8	SMALL OUTLINE	SOP20,.4	Flash Memories	20	1.27 mm	85 Cel		64KX8	64K	-40 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G20	3	3.6 V	2.6416 mm	20000 Write/Erase Cycles	33 MHz	7.5184 mm	Not Qualified	524288 bit	3 V		e3	30	260	NOR TYPE	.01 Amp	12.827 mm	15 ns
XC1701LPDG8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	1048576 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel	Matte Tin (Sn)	DUAL		R-PDIP-T8	1	3.6 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified	1048576 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	250		.00005 Amp	9.3599 mm
XC1701LPCG20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	10 mA	1048576 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel	Matte Tin (Sn)	QUAD		S-PQCC-J20	3	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified	1048576 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	245		.00005 Amp	8.9662 mm
XC1736EPDG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	36288 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	36288X1	36288	0 Cel	Matte Tin (Sn)	DUAL		R-PDIP-T8	1	5.25 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	36288 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	250		.00005 Amp	9.3599 mm
XC1736ESOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	10 mA	36288 words	COMMON	5	5	1	SMALL OUTLINE	SOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	36288X1	36288	0 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G8	3	5.25 V	1.7272 mm		10 MHz	3.937 mm	Not Qualified	36288 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	250		.00005 Amp	4.9276 mm
XC1765EPDG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Matte Tin (Sn)	DUAL		R-PDIP-T8	1	5.25 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified	65536 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	250		.00005 Amp	9.3599 mm
XC1765ELSOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G8	3	3.6 V	1.7272 mm		2.5 MHz	3.937 mm	Not Qualified	65536 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	250		.00005 Amp	4.9276 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.