EEPROM

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
24AA025-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words		2.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel	OPEN-DRAIN	256X8	256	-40 Cel		MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e3				.000001 Amp	9.271 mm		2.5
25LC1024T-E/MF	Microchip Technology	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	10 mA	131072 words		5		3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	200	1.27 mm	125 Cel		128KX8	128K	-40 Cel		MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	10 MHz	5 mm	Not Qualified	6 ms	SPI	1048576 bit	2.5 V	200 YEARS OF DATA RETENTION; 1000000 ENDURANCE CYCLES/WORD		e3	40	260	NOR TYPE	.00002 Amp	6 mm		5
M24256-BWMW6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	32768 words		5		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	40	1.27 mm	85 Cel		32KX8	32K	-40 Cel		MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	2.5 mm	1000000 Write/Erase Cycles	.4 MHz	5.62 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V			e3				.000002 Amp	5.62 mm
M24256-BWMW6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	32768 words		5		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	40	1.27 mm	85 Cel		32KX8	32K	-40 Cel		Matte Tin (Sn)	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	2.5 mm	1000000 Write/Erase Cycles	.4 MHz	5.62 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V			e3	30	260		.000002 Amp	5.62 mm
M24C01-RDS6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	128 words		5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.65 mm	85 Cel		128X8	128	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	1024 bit	1.8 V			e4				.000001 Amp	3 mm
M24C01-RDS6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	128 words		5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.65 mm	85 Cel		128X8	128	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	1024 bit	1.8 V			e4				.000001 Amp	3 mm
M24C01-WBN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words		5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		128X8	128	-40 Cel		MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V			e3				.000001 Amp	9.27 mm
M24C02-RDS6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	256 words		2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.65 mm	85 Cel		256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V			e4				.000001 Amp	3 mm
M24C02-RDS6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	256 words		2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.65 mm	85 Cel		256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V			e4				.000001 Amp	3 mm
M24C02-RMB6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.8 mA	256 words		2.5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel		256X8	256	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e4	30	260		.000001 Amp	3 mm
M24C02-WBN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words		5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		256X8	256	-40 Cel		MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V			e3				.000001 Amp	9.27 mm
M24C04-RDS6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	512 words		2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.65 mm	85 Cel		512X8	512	-40 Cel		NICKEL PALLADIUM GOLD	1010DDMR	DUAL		HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	4096 bit	1.8 V			e4				.000001 Amp	3 mm
M24C04-RMB6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.8 mA	512 words		2.5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel		512X8	512	-40 Cel		NICKEL PALLADIUM GOLD	1010DDMR	DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	4096 bit	1.8 V			e4				.000001 Amp	3 mm
M24C04-WBN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	512 words		5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		512X8	512	-40 Cel		Matte Tin (Sn) - annealed	1010DDMR	DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V			e3	NOT SPECIFIED	NOT SPECIFIED		.000001 Amp	9.27 mm
M24C08-RDS6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	1024 words		5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.65 mm	85 Cel		1KX8	1K	-40 Cel		NICKEL PALLADIUM GOLD	1010DMMR	DUAL		HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	8192 bit	1.8 V			e4				.000001 Amp	3 mm
M24C08-RDS6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	1024 words		5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.65 mm	85 Cel		1KX8	1K	-40 Cel		NICKEL PALLADIUM GOLD	1010DMMR	DUAL		HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	8192 bit	1.8 V			e4				.000001 Amp	3 mm
M24C08-RMB6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.8 mA	1024 words		2.5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel		1KX8	1K	-40 Cel		NICKEL PALLADIUM GOLD	1010DMMR	DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	8192 bit	1.8 V			e4				.000001 Amp	3 mm
M24C08-RMN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	1024 words		5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		1KX8	1K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010DMMR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	8192 bit	1.8 V			e4	30	260		.000001 Amp	4.9 mm
M24C08-WBN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	1024 words		5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		1KX8	1K	-40 Cel		Matte Tin (Sn) - annealed	1010DMMR	DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V			e3	NOT SPECIFIED	NOT SPECIFIED		.000001 Amp	9.27 mm
M24C16-RBN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	.8 mA	2048 words		2.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		2KX8	2K	-40 Cel		MATTE TIN	1010MMMR	DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V			e3				.000001 Amp	9.27 mm
M24C16-RDS6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	2048 words		2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.65 mm	85 Cel		2KX8	2K	-40 Cel		NICKEL PALLADIUM GOLD	1010MMMR	DUAL		HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	16384 bit	1.8 V			e4				.000001 Amp	3 mm
M24C16-RMB6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.8 mA	2048 words		2.5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel		2KX8	2K	-40 Cel		NICKEL PALLADIUM GOLD	1010MMMR	DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V			e4				.000001 Amp	3 mm
M24C16-WBN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	2048 words		5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		2KX8	2K	-40 Cel		MATTE TIN	1010MMMR	DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V			e3				.000001 Amp	9.27 mm
M34E02-FMB1TG	STMicroelectronics	EEPROM	COMMERCIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words		2.5		1.8/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20		EEPROMs	40	.5 mm	70 Cel		256X8	256	0 Cel		NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE/SOFTWARE	R-XDSO-N8	1	3.6 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V			e4				.000001 Amp	3 mm
CAT28C64BL-12	Catalyst Semiconductor	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel		8KX8	8K	0 Cel	NO	MATTE TIN		DUAL			R-PDIP-T28		5.5 V	5.08 mm	1000000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		65536 bit	4.5 V		32	e3				.0001 Amp	36.695 mm	120 ns	5	YES
M95080-RMB6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	VQCCN	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	1 mA	1024 words		5		2/5	8	CHIP CARRIER, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel		1KX8	1K	-40 Cel		NICKEL PALLADIUM GOLD		BOTTOM		HARDWARE/SOFTWARE	R-XBCC-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	5 MHz	2 mm	Not Qualified	5 ms	SPI	8192 bit	1.8 V			e4				.0000005 Amp	3 mm
M93C66-RMB6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words		5		2/5	16	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.11,20	8	EEPROMs	40	.5 mm	85 Cel		256X16	256	-40 Cel				DUAL		SOFTWARE	R-XDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	1.8 V			e4	NOT SPECIFIED	NOT SPECIFIED		.000002 Amp	3 mm
XC18V02PC44C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		262144 words		3.3			8	CHIP CARRIER					1.27 mm	85 Cel		256KX8	256K	-40 Cel		TIN LEAD		QUAD			S-PQCC-J44	3	3.6 V	4.572 mm			16.5862 mm	Not Qualified			2097152 bit	3 V			e0					16.5862 mm	20 ns
XCF01SVOG20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	1048576 words		3.3		1.8/3.3,3.3	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25		Flash Memories	20	.65 mm	85 Cel		1MX1	1M	-40 Cel		Matte Tin (Sn)		DUAL			R-PDSO-G20	3	3.6 V	1.19 mm	20000 Write/Erase Cycles		4.4 mm	Not Qualified			1048576 bit	3 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL		e3	30	260	NOR TYPE	.001 Amp	6.5024 mm
XCF02SVOG20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	2097152 words		3.3		1.8/3.3,3.3	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25		Flash Memories	20	.65 mm	85 Cel		2MX1	2M	-40 Cel		Matte Tin (Sn)		DUAL			R-PDSO-G20	3	3.6 V	1.19 mm	20000 Write/Erase Cycles		4.4 mm	Not Qualified			2097152 bit	3 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL		e3	30	260	NOR TYPE	.001 Amp	6.5024 mm
XCF08PFSG48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	40 mA	8388608 words		1.8		1.5/3.3,1.8	1	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories		.8 mm	85 Cel		8MX1	8M	-40 Cel		Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)		BOTTOM			R-PBGA-B48	3	2 V	1.2 mm	20000 Write/Erase Cycles	33 MHz	8 mm	Not Qualified			8388608 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL		e2	30	260	NOR TYPE	.001 Amp	9 mm
XCF08PVOG48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	40 mA	8388608 words		1.8		1.5/3.3,1.8	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		8MX1	8M	-40 Cel		Matte Tin (Sn)		DUAL			R-PDSO-G48	3	2 V	1.2 mm	20000 Write/Erase Cycles	33 MHz	12 mm	Not Qualified			8388608 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL		e3	30	260	NOR TYPE	.001 Amp	18.45 mm
XCF16PFSG48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	40 mA	16777216 words		1.8		1.5/3.3,1.8	1	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	20	.8 mm	85 Cel		16MX1	16M	-40 Cel		Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)		BOTTOM			R-PBGA-B48	3	2 V	1.2 mm	20000 Write/Erase Cycles		8 mm	Not Qualified			16777216 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL		e2	30	260	NOR TYPE		9 mm
XCF16PVOG48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	40 mA	16777216 words		1.8		1.5/3.3,1.8	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	20	.5 mm	85 Cel		16MX1	16M	-40 Cel		Matte Tin (Sn)		DUAL			R-PDSO-G48	3	2 V	1.2 mm	20000 Write/Erase Cycles		12 mm	Not Qualified			16777216 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL		e3	30	260	NOR TYPE		18.45 mm
XCF32PFSG48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	40 mA	33554432 words		1.8		1.5/3.3,1.8	1	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	20	.8 mm	85 Cel	3-STATE	32MX1	32M	-40 Cel		Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)		BOTTOM		HARDWARE	R-PBGA-B48	3	2 V	1.2 mm	20000 Write/Erase Cycles	50 MHz	8 mm	Not Qualified			33554432 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL		e2	30	260	NOR TYPE		9 mm		1.8
XCF32PVOG48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	40 mA	33554432 words		1.8		1.5/3.3,1.8	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	20	.5 mm	85 Cel		32MX1	32M	-40 Cel		Matte Tin (Sn)		DUAL			R-PDSO-G48	3	2 V	1.2 mm	20000 Write/Erase Cycles		12 mm	Not Qualified			33554432 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL		e3	30	260	NOR TYPE	.001 Amp	18.45 mm
XC17S100AVOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	781216 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25		OTP ROMs		1.27 mm	70 Cel	3-STATE	781216X1	781216	0 Cel		Matte Tin (Sn)		DUAL			R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified			781216 bit	3 V			e3	30	260		.001 Amp	4.9 mm
XC17S15AVOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	197696 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25		OTP ROMs		1.27 mm	70 Cel	3-STATE	197696X1	197696	0 Cel		Matte Tin (Sn)		DUAL			R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified			197696 bit	3 V			e3	30	260		.001 Amp	4.9 mm
XC17S200AVOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	1335840 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25		OTP ROMs		1.27 mm	70 Cel	3-STATE	1335840X1	1335840	0 Cel		Matte Tin (Sn)		DUAL			R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified			1335840 bit	3 V			e3	30	260		.001 Amp	4.9 mm
XC17S200AVOG8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	1335840 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25		OTP ROMs		1.27 mm	85 Cel	3-STATE	1335840X1	1335840	-40 Cel		Matte Tin (Sn)		DUAL			R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified			1335840 bit	3 V			e3	30	260		.001 Amp	4.9 mm
XC17S50AVOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	15 mA	559200 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25		OTP ROMs		1.27 mm	70 Cel	3-STATE	559200X1	559200	0 Cel		Matte Tin (Sn)		DUAL			R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified			559200 bit	3 V			e3	30	260		.001 Amp	4.9 mm
XC1736EVOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	36288 words	COMMON	5		5	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25		OTP ROMs		1.27 mm	70 Cel	3-STATE	36288X1	36288	0 Cel		Matte Tin (Sn)		DUAL			R-PDSO-G8	3	5.25 V	1.1938 mm		10 MHz	3.937 mm	Not Qualified			36288 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e3	30	260		.00005 Amp	4.9276 mm
XC1765ELVOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	COMMON	3.3		3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25		OTP ROMs		1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel		Matte Tin (Sn)		DUAL			R-PDSO-G8	3	3.6 V	1.1938 mm		2.5 MHz	3.937 mm	Not Qualified			65536 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e3	30	260		.00005 Amp	4.9276 mm
XC18V04VQG44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	524288 words		3.3		2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32		Flash Memories	20	.8 mm	85 Cel		512KX8	512K	-40 Cel		Matte Tin (Sn)		QUAD			S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	20 MHz	10 mm	Not Qualified			4194304 bit	3 V			e3	30	260	NOR TYPE	.01 Amp	10 mm	20 ns
XC18V512VQG44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	65536 words		3.3		2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32		Flash Memories	20	.8 mm	85 Cel		64KX8	64K	-40 Cel		Matte Tin (Sn)		QUAD			S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified			524288 bit	3 V			e3	30	260	NOR TYPE	.01 Amp	10 mm	15 ns
XC18V01VQG44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words		3.3		2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32		Flash Memories	20	.8 mm	85 Cel		128KX8	128K	-40 Cel		Matte Tin (Sn)		QUAD			S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified			1048576 bit	3 V			e3	30	260	NOR TYPE	.01 Amp	10 mm	15 ns
XC18V02VQG44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	262144 words		3.3		2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32		Flash Memories	20	.8 mm	85 Cel		256KX8	256K	-40 Cel		Matte Tin (Sn)		QUAD			S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	20 MHz	10 mm	Not Qualified			2097152 bit	3 V			e3	30	260	NOR TYPE	.01 Amp	10 mm	20 ns
24LC024H-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words		4.5			8	IN-LINE	DIP8,.3			200	2.54 mm	85 Cel	OPEN-DRAIN	256X8	256	-40 Cel		MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V			e3				.000005 Amp	9.271 mm		4.5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.