EEPROM

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
24VL024H/SN	Microchip Technology	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		2.5	1.8/3.3	8	SMALL OUTLINE	SOP8,.23	EEPROMs	200	1.27 mm	85 Cel	OPEN-DRAIN	256X8	256	-20 Cel	Matte Tin (Sn)	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	3.6 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V	1.5V TO 1.8V @ 0.1MHz	e3	30	260		.000001 Amp	4.9 mm		2.5
24VL024HT/MNY	Microchip Technology	EEPROM	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words		2.5	1.8/3.3	8	SMALL OUTLINE	SOLCC8,.11,20	EEPROMs	200	.5 mm	85 Cel	OPEN-DRAIN	256X8	256	-20 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL	1	HARDWARE	R-PDSO-N8	1	3.6 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V	1.5V TO 1.8V @ 0.1MHz	e4	40	260		.000001 Amp	3 mm		2.5
M34F04-WMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	512 words		3.3	2.7/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel		512X8	512	-40 Cel	NICKEL PALLADIUM GOLD	1010DDMR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V		e4	30	260		.0000005 Amp	4.9 mm
M95128-RDW6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	16384 words		2.5	2/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.65 mm	85 Cel		16KX8	16K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	.65 mm	100000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	SPI	131072 bit	1.8 V		e4				.0000005 Amp	4.4 mm
XC17128EPDG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	128KX1	128K	0 Cel	Matte Tin (Sn)		DUAL			R-PDIP-T8	1	5.25 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified			131072 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	250		.00005 Amp	9.3599 mm
XC17256EPCG20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	262144 words	COMMON	5	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Matte Tin (Sn)		QUAD			S-PQCC-J20	3	5.25 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified			262144 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	245		.00005 Amp	8.9662 mm
XC17256EPDG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	262144 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Matte Tin (Sn)		DUAL			R-PDIP-T8	1	5.25 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified			262144 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	250		.00005 Amp	9.3599 mm
XC17S200APDG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	15 mA	1335840 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	1335840X1	1335840	0 Cel	Matte Tin (Sn)		DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified			1335840 bit	3 V		e3	30	250		.001 Amp	9.3599 mm
XC17S200APDG8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	15 mA	1335840 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	1335840X1	1335840	-40 Cel	Matte Tin (Sn)		DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified			1335840 bit	3 V		e3	30	250		.001 Amp	9.3599 mm
XC17S50APDG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	15 mA	559200 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	559200X1	559200	0 Cel	Matte Tin (Sn)		DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified			559200 bit	3 V		e3	30	250		.001 Amp	9.3599 mm
XC18V01PCG20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	20	1.27 mm	85 Cel		128KX8	128K	-40 Cel	Matte Tin (Sn)		QUAD			S-PQCC-J20	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	33 MHz	8.9662 mm	Not Qualified			1048576 bit	3 V		e3	30	245	NOR TYPE	.01 Amp	8.9662 mm	15 ns
XC18V01SOG20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words		3.3	2.5/3.3,3.3	8	SMALL OUTLINE	SOP20,.4	Flash Memories	20	1.27 mm	85 Cel		128KX8	128K	-40 Cel	Matte Tin (Sn)		DUAL			R-PDSO-G20	3	3.6 V	2.6416 mm	20000 Write/Erase Cycles	33 MHz	7.5184 mm	Not Qualified			1048576 bit	3 V		e3	30	260	NOR TYPE	.01 Amp	12.827 mm	15 ns
XC18V02PCG44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	262144 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	20	1.27 mm	85 Cel		256KX8	256K	-40 Cel	Matte Tin (Sn)		QUAD			S-PQCC-J44	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	20 MHz	16.5862 mm	Not Qualified			2097152 bit	3 V		e3	30	245	NOR TYPE	.01 Amp	16.5862 mm	20 ns
XC18V04PCG44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	524288 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel	Matte Tin (Sn)		QUAD			S-PQCC-J44	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	20 MHz	16.5862 mm	Not Qualified			4194304 bit	3 V		e3	30	245	NOR TYPE	.01 Amp	16.5862 mm	20 ns
XC18V512PCG20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	65536 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	20	1.27 mm	85 Cel		64KX8	64K	-40 Cel	Matte Tin (Sn)		QUAD			S-PQCC-J20	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	33 MHz	8.9662 mm	Not Qualified			524288 bit	3 V		e3	30	245	NOR TYPE	.01 Amp	8.9662 mm	15 ns
XC18V512SOG20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	65536 words		3.3	2.5/3.3,3.3	8	SMALL OUTLINE	SOP20,.4	Flash Memories	20	1.27 mm	85 Cel		64KX8	64K	-40 Cel	Matte Tin (Sn)		DUAL			R-PDSO-G20	3	3.6 V	2.6416 mm	20000 Write/Erase Cycles	33 MHz	7.5184 mm	Not Qualified			524288 bit	3 V		e3	30	260	NOR TYPE	.01 Amp	12.827 mm	15 ns
XC1701LPDG8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	1048576 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel	Matte Tin (Sn)		DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified			1048576 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	250		.00005 Amp	9.3599 mm
XC1701LPCG20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	1048576 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel	Matte Tin (Sn)		QUAD			S-PQCC-J20	3	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified			1048576 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	245		.00005 Amp	8.9662 mm
XC1736EPDG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	36288 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	36288X1	36288	0 Cel	Matte Tin (Sn)		DUAL			R-PDIP-T8	1	5.25 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified			36288 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	250		.00005 Amp	9.3599 mm
XC1736ESOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	36288 words	COMMON	5	5	1	SMALL OUTLINE	SOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	36288X1	36288	0 Cel	Matte Tin (Sn)		DUAL			R-PDSO-G8	3	5.25 V	1.7272 mm		10 MHz	3.937 mm	Not Qualified			36288 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	250		.00005 Amp	4.9276 mm
XC1765EPDG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	5	5	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Matte Tin (Sn)		DUAL			R-PDIP-T8	1	5.25 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified			65536 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	250		.00005 Amp	9.3599 mm
XC1765ELSOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Matte Tin (Sn)		DUAL			R-PDSO-G8	3	3.6 V	1.7272 mm		2.5 MHz	3.937 mm	Not Qualified			65536 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	250		.00005 Amp	4.9276 mm
XC1765ESOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	COMMON	5	5	1	SMALL OUTLINE	SOP8,.25	OTP ROMs		1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Matte Tin (Sn)		DUAL			R-PDSO-G8	3	5.25 V	1.7272 mm		10 MHz	3.937 mm	Not Qualified			65536 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	250		.00005 Amp	4.9276 mm
XC1701L-PDG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	1048576 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3	OTP ROMs		2.54 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Matte Tin (Sn)		DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified			1048576 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	250		.00005 Amp	9.3599 mm
XC1701L-PCG20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	10 mA	1048576 words	COMMON	3.3	3.3	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs		1.27 mm	70 Cel	3-STATE	1MX1	1M	0 Cel	Matte Tin (Sn)		QUAD			S-PQCC-J20	3	3.6 V	4.572 mm		15 MHz	8.9662 mm	Not Qualified			1048576 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	245		.00005 Amp	8.9662 mm
M24C32-RMB6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	.8 mA	4096 words		2.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	40	.5 mm	85 Cel		4KX8	4K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	32768 bit	1.8 V		e4				.0000002 Amp	3 mm
M95512-RDW6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	8 mA	65536 words		2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.65 mm	85 Cel		64KX8	64K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	524288 bit	1.8 V		e4				.000005 Amp	4.4 mm
24FC512-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words		2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	200	.65 mm	85 Cel	OPEN-DRAIN	64KX8	64K	-40 Cel	Matte Tin (Sn) - annealed	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	524288 bit	1.7 V		e3	40	260		.000001 Amp	4.4 mm		2.5
24AA01T-I/MC	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words		2.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	EEPROMs	200	.5 mm	85 Cel		128X8	128	-40 Cel	Matte Tin (Sn)	1010XXXR	DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	1024 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz	e3	40	260		.000001 Amp	3 mm		2.5
M24512-RDW6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words		2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	200	.65 mm	85 Cel		64KX8	64K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	4000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	524288 bit	1.8 V		e4				.000001 Amp	4.4 mm
24AA024T-I/MC	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words		2.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	EEPROMs	200	.5 mm	85 Cel	OPEN-DRAIN	256X8	256	-40 Cel	Matte Tin (Sn)	1010DDDR	DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V		e3	40	260		.000001 Amp	3 mm		2.5
24AA1025-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	131072 words		2.5	2/5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	85 Cel	OPEN-DRAIN	128KX8	128K	-40 Cel	MATTE TIN	1010MDDR	DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	1048576 bit	1.7 V		e3				.000005 Amp	9.271 mm		2.5
24C02C-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		5	5	8	SMALL OUTLINE	SOP8,.19	EEPROMs	200	.65 mm	85 Cel	OPEN-DRAIN	256X8	256	-40 Cel	Matte Tin (Sn)	1010DDDR	DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	1 ms	I2C	2048 bit	4.5 V		e3	40	260		.000005 Amp	3 mm		5
24C02CT-I/MC	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words		5	5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	EEPROMs	200	.5 mm	85 Cel	OPEN-DRAIN	256X8	256	-40 Cel	Matte Tin (Sn)	1010DDDR	DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	1 ms	I2C	2048 bit	4.5 V		e3	40	260		.000005 Amp	3 mm		5
24FC1025-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	131072 words		2.5	2/5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	85 Cel	OPEN-DRAIN	128KX8	128K	-40 Cel	MATTE TIN	1010MDDR	DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	5 ms	I2C	1048576 bit	1.8 V		e3				.000005 Amp	9.271 mm		2.5
25AA256-I/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	6 mA	32768 words		2.5	2/5	8	SMALL OUTLINE	SOP8,.3	EEPROMs	200	1.27 mm	85 Cel		32KX8	32K	-40 Cel	Matte Tin (Sn) - annealed		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	10 MHz	5.25 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V		e3	40	260		.000001 Amp	5.245 mm		2.5
25AA256X-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	6 mA	32768 words		2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	200	.65 mm	85 Cel		32KX8	32K	-40 Cel	Matte Tin (Sn)		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V		e3	40	260		.000001 Amp	4.4 mm		2.5
25AA256XT-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	6 mA	32768 words		2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	200	.65 mm	85 Cel		32KX8	32K	-40 Cel	Matte Tin (Sn)		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V		e3	40	260		.000001 Amp	4.4 mm		2.5
M95020-DWDW4TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		256 words				8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	145 Cel		256X8	256	-40 Cel			DUAL			R-PDSO-G8		5.5 V	1.2 mm		10 MHz	3 mm		4 ms	SPI	2048 bit	2.5 V							4.4 mm
24AA32AF-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words		2.5	2/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	200	1.27 mm	85 Cel	OPEN-DRAIN	4KX8	4K	-40 Cel	Matte Tin (Sn)	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	32768 bit	1.7 V		e3	30	260		.000001 Amp	4.9 mm		2.5
24LC32AF-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words		5	3/5	8	SMALL OUTLINE	SOP8,.19	EEPROMs	200	.65 mm	85 Cel	OPEN-DRAIN	4KX8	4K	-40 Cel	Matte Tin (Sn) - annealed	1010DDDR	DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V		e3	40	260		.000001 Amp	3 mm		5
24LC32AFT-E/OT	Microchip Technology	EEPROM	AUTOMOTIVE	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words		5	3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP6,.11,37	EEPROMs	200	.95 mm	125 Cel	OPEN-DRAIN	4KX8	4K	-40 Cel	Matte Tin (Sn) - annealed	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V		e3	40	260		.000005 Amp	2.9 mm		5
24LC64F-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words		5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	200	.65 mm	85 Cel	OPEN-DRAIN	8KX8	8K	-40 Cel	Matte Tin (Sn)	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V		e3	40	260		.000001 Amp	4.4 mm		5
25AA080DT-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	1024 words		2.5	2/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	200	1.27 mm	85 Cel		1KX8	1K	-40 Cel	Matte Tin (Sn)		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	8192 bit	1.8 V		e3	30	260		.000001 Amp	4.9 mm		2.5
25AA160C-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	1024 words		2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	200	.65 mm	85 Cel	3-STATE	1KX8	1K	-40 Cel	Matte Tin (Sn) - annealed		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	8192 bit	1.8 V	OPERATES WITH 1.8VMIN @ 3MHZ	e3	40	260		.000005 Amp	4.4 mm		2.5
25AA160D-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	1024 words		2.5	2/5	8	SMALL OUTLINE	SOP8,.19	EEPROMs	200	.65 mm	85 Cel	3-STATE	1KX8	1K	-40 Cel	Matte Tin (Sn) - annealed		DUAL	1	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	8192 bit	1.8 V	OPERATES WITH 1.8VMIN @ 3MHZ	e3	40	260		.000005 Amp	3 mm		2.5
25LC080DT-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	1024 words		5	3/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	200	1.27 mm	85 Cel		1KX8	1K	-40 Cel	Matte Tin (Sn)		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	8192 bit	2.5 V		e3	30	260		.000001 Amp	4.9 mm		5
25LC160C-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	2048 words		5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	200	.65 mm	85 Cel		2KX8	2K	-40 Cel	Matte Tin (Sn) - annealed		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	16384 bit	2.5 V		e3	40	260		.000001 Amp	4.4 mm		5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.