EEPROM

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
LE2416RDXATDG	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		2048 words	2		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			2KX8	2K	-40 Cel		TIN SILVER COPPER		BOTTOM			R-PBGA-B6	1	3.6 V	.33 mm		1 MHz	.8 mm	5 ms	I2C	16384 bit	1.7 V			e1	30	260		1.2 mm
LE2464DXATBG	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words	2		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			8KX8	8K	-40 Cel		TIN SILVER COPPER		BOTTOM			R-PBGA-B6	1	3.6 V	.33 mm		1 MHz	.8 mm	5 ms	I2C	65536 bit	1.7 V			e1	30	260		1.2 mm
CAV25512HU5E-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		65536 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	125 Cel			64KX8	64K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL			R-PDSO-N8	1	5.5 V	.55 mm		10 MHz	2 mm	5 ms	SPI	524288 bit	2.5 V			e4	30	260		3 mm
NV25M01DWUTG	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		131072 words	2.5		8	SMALL OUTLINE				1.27 mm	105 Cel			128KX8	128K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL			R-PDSO-G8	1	5.5 V	1.75 mm		5 MHz	3.9 mm	5 ms	SPI	1048576 bit	1.8 V			e4	30	260		4.9 mm
AT28C64B-15JU-235	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	400 mA	8192 words	5		8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	85 Cel			8KX8	8K	-40 Cel		MATTE TIN		QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	10 ms		65536 bit	4.5 V			e3	40	245	.0001 Amp	13.97 mm	150 ns	5
AT28C64B-15TU-T	Microchip Technology	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5		8	SMALL OUTLINE, THIN PROFILE			10	.55 mm	85 Cel			8KX8	8K	-40 Cel		MATTE TIN		DUAL			R-PDSO-G28		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	10 ms		65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE		e3				11.8 mm	150 ns	5
CAT24S64C4ATR	Onsemi	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel			8KX8	8K	-40 Cel		TIN SILVER COPPER		BOTTOM			S-PBGA-B4	1	5.5 V	.35 mm		1 MHz	.85 mm	5 ms	I2C	65536 bit	1.7 V	LG-MAX, WD-MAX, ALSO AVAILABLE 1.6-5.5V OPERATES WITH 0.1MHZ AND 0.4MHZ		e1	30	260		.85 mm
AT28LV010-20JU-051	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		131072 words	3.3		8	CHIP CARRIER				1.27 mm	85 Cel			128KX8	128K	-40 Cel				QUAD			R-PQCC-J32		3.465 V	3.556 mm			11.43 mm	10 ms		1048576 bit	3.135 V				NOT SPECIFIED	NOT SPECIFIED		13.97 mm	200 ns	3
AT28LV010-20JU-235	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	3.3		8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	85 Cel			128KX8	128K	-40 Cel		MATTE TIN		QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32		3.465 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	10 ms		1048576 bit	3.135 V			e3			.00005 Amp	13.97 mm	200 ns	3
AT28LV010-20JU-319	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	3.3		8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	85 Cel			128KX8	128K	-40 Cel		MATTE TIN		QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32	3	3.465 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	10 ms		1048576 bit	3.135 V			e3	40	245	.00005 Amp	13.97 mm	200 ns	3
AT28LV010-20JU-630	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	3.3		8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	85 Cel			128KX8	128K	-40 Cel		MATTE TIN		QUAD	1	HARDWARE/SOFTWARE	R-PQCC-J32		3.465 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	10 ms		1048576 bit	3.135 V			e3			.00005 Amp	13.97 mm	200 ns	3
AT28LV010-20TU-235	Microchip Technology	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		10	.5 mm	85 Cel			128KX8	128K	-40 Cel		MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G32		3.465 V	1.2 mm	100000 Write/Erase Cycles		8 mm	10 ms		1048576 bit	3.135 V			e3			.00005 Amp	18.4 mm	200 ns	3
AT28LV010-20TU-319	Microchip Technology	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	3.3		8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		10	.5 mm	85 Cel			128KX8	128K	-40 Cel		MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G32		3.465 V	1.2 mm	100000 Write/Erase Cycles		8 mm	10 ms		1048576 bit	3.135 V			e3			.00005 Amp	18.4 mm	200 ns	3
AT28C256-15JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5		8	CHIP CARRIER				1.27 mm	85 Cel			32KX8	32K	-40 Cel		MATTE TIN		QUAD			R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm	10 ms		262144 bit	4.5 V			e3	40	245		13.97 mm	150 ns	5
MR25H128APDF	Everspin Technologies	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		16384 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				1.27 mm	85 Cel			16KX8	16K	-40 Cel				DUAL			R-PDSO-N8	3	3.6 V	.9 mm		40 MHz	5 mm		SPI	131072 bit	2.7 V							6 mm
AT28C256-15DM/883-815	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class C	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5		8	IN-LINE				2.54 mm	125 Cel			32KX8	32K	-55 Cel		TIN LEAD		DUAL			R-GDIP-T28		5.5 V	5.72 mm			15.24 mm	10 ms		262144 bit	4.5 V			e0				37.215 mm	150 ns	5
AT28C256E-15JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5		8	CHIP CARRIER				1.27 mm	85 Cel			32KX8	32K	-40 Cel		MATTE TIN		QUAD			R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm			262144 bit	4.5 V			e3	40	245		13.97 mm	150 ns	5
AT28HC256E-12JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5		8	CHIP CARRIER				1.27 mm	85 Cel			32KX8	32K	-40 Cel		MATTE TIN		QUAD			R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm			262144 bit	4.5 V			e3	40	245		13.97 mm	120 ns	5
FT24C04A-UTR-B	Fremont Micro Devices	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel			512X8	512	-40 Cel				DUAL			R-PDSO-G8		5.5 V	1.1 mm		1 MHz	3 mm	5 ms	I2C	4096 bit	2.5 V	IT ALSO HAVE FREQUENCY 0.4 MHZ OPERATES AT 1.8V			NOT SPECIFIED	NOT SPECIFIED		4.4 mm
FT24C04A-USR-T	Fremont Micro Devices	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	5		8	SMALL OUTLINE				1.27 mm	85 Cel			512X8	512	-40 Cel				DUAL			R-PDSO-G8		5.5 V	1.75 mm		1 MHz	3.9 mm	5 ms	I2C	4096 bit	2.5 V	IT ALSO HAVE FREQUENCY 0.4 MHZ OPERATES AT 1.8V			NOT SPECIFIED	NOT SPECIFIED		4.9 mm
NV34C04MU3VTG	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	4096 words	2.5		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		100	.5 mm	125 Cel	NO		4KX1	4K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	3.6 V	.55 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	4 ms	I2C	4096 bit	2.2 V	IT ALSO OPERATES AT 1.7-3.6V SUPPLY VOLTAGE AT FREQUENCY 0.1 MHZ AND 0.4 MHZ		e4	30	260	.000001 Amp	3 mm		3.6
NV25320MUW3VTBG	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		4096 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	125 Cel			4KX8	4K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL			R-PDSO-N8	1	5.5 V	.55 mm		10 MHz	2 mm	5 ms	SPI	32768 bit	2.5 V			e4	30	260		3 mm
CAT24C512YI-G	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	65536 words	5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		100	.65 mm	85 Cel			64KX8	64K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	5 ms	I2C	524288 bit	2.5 V	ALSO OPERATES WITH 1.8V MIN AT 4 KHZ		e4	30	260	.000002 Amp	4.4 mm
CAT24M01WI-G	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	131072 words	3.3		8	SMALL OUTLINE	SOP8,.25	1	100	1.27 mm	85 Cel			128KX8	128K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	5 ms	SPI	1048576 bit	1.8 V	IT ALSO OPERATES AT 0.4MHZ AT 1.8MIN SUPPLY		e4	30	260	.000002 Amp	4.9 mm		3.3
CAT25M01VI-G	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words	2.5		8	SMALL OUTLINE	SOP8,.25	1	100	1.27 mm	85 Cel		3-STATE	128KX8	128K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	5 ms	SPI	1048576 bit	1.8 V			e4	30	260	.000001 Amp	4.9 mm
M24512-HRDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		65536 words			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel			64KX8	64K	-40 Cel				DUAL			R-PDSO-G8		5.5 V	1.2 mm		.4 MHz	3 mm	5 ms	I2C	524288 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED		4.4 mm
24AA02T-I/OT16KVAO	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		200	.95 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel			1010XXXR	DUAL	1	HARDWARE	R-PDSO-G5		5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.63 mm	5 ms	I2C	2048 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz					.000001 Amp	2.95 mm		2.5
24CW160T-I/MUY	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		200	.5 mm	85 Cel		OPEN-DRAIN	2KX8	2K	-40 Cel			1010DDDR	DUAL	1	SOFTWARE	R-PDSO-N8		5.5 V	.55 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	5 ms	I2C	16384 bit	1.6 V						.000001 Amp	3 mm		1.8
24LC02BTE/OT16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH				.95 mm	125 Cel			256X8	256	-40 Cel				DUAL			R-PDSO-G5		5.5 V	1.45 mm		.4 MHz	1.6 mm	5 ms	I2C	2048 bit	2.5 V							2.9 mm
25AA512T-I/SN16KVAO	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	5		8	SMALL OUTLINE	SOP8,.23		200	1.27 mm	85 Cel			64KX8	64K	-40 Cel				DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	20 MHz	3.9 mm	5 ms	SPI	524288 bit	4.5 V	2.5V TO 5.5V @ 0.1MHz					.000001 Amp	4.9 mm		5
AT28C010-12JU-235	Microchip Technology	EEPROM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words	5		8	SMALL OUTLINE				1.27 mm	85 Cel			128KX8	128K	-40 Cel				DUAL			R-PDSO-G32		5.5 V	3.556 mm			11.43 mm	10 ms		1048576 bit	4.5 V							13.97 mm	120 ns	5
AT28C010E-12JU-235	Microchip Technology	EEPROM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words	5		8	SMALL OUTLINE				1.27 mm	85 Cel			128KX8	128K	-40 Cel				DUAL			R-PDSO-G32		5.5 V	3.556 mm			11.43 mm	10 ms		1048576 bit	4.5 V							13.97 mm	120 ns	5
AT28HC64B-12JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	8	SMALL OUTLINE	SOP8,.16		10	1.27 mm	85 Cel		3-STATE	8KX8	8K	-40 Cel	NO			DUAL	1		R-PDSO-G32		5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	10 ms		65536 bit	4.5 V		64				.0001 Amp	13.97 mm	120 ns	5	YES
AT28HC64BF-12JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	8	SMALL OUTLINE	SOP8,.16		10	1.27 mm	85 Cel		3-STATE	8KX8	8K	-40 Cel	NO	MATTE TIN		DUAL	1		R-PDSO-G32	1	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	10 ms		65536 bit	4.5 V		64	e3	30	245	.0001 Amp	13.97 mm	120 ns	5	YES
24AA01T-I/OT16KVAO	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	2.5		8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		200	.95 mm	85 Cel			128X8	128	-40 Cel		Matte Tin (Sn)	1010XXXR	DUAL	1	HARDWARE	R-PDSO-G5		5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.63 mm	5 ms	I2C	1024 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz		e3			.000001 Amp	2.95 mm		2.5
24LC01BTE/OT16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5		8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH				.95 mm	125 Cel			128X8	128	-40 Cel		MATTE TIN		DUAL			R-PDSO-G5		5.5 V	1.45 mm		.4 MHz	1.6 mm	5 ms	I2C	1024 bit	2.5 V			e3	30	260		2.9 mm
AT28BV256-20SU-T	Microchip Technology	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3	YES	8	SMALL OUTLINE	SOP28,.4			1.27 mm	85 Cel			32KX8	32K	-40 Cel		MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G28	3	3.6 V	2.65 mm	10000 Write/Erase Cycles		7.5 mm	10 ms		262144 bit	2.7 V	THE PART EXISTS IN EEPROM3V	64	e3	30	260	.00005 Amp	17.9 mm	200 ns	3
24AA16T-E/OT16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	2.5		8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		200	.95 mm	125 Cel			2KX8	2K	-40 Cel			1010MMMR	DUAL	1	HARDWARE	R-PDSO-G5		5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	5 ms	I2C	16384 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz					.000005 Amp	2.9 mm		2.5
24LC1025T-E/SN16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	131072 words	5		8	SMALL OUTLINE	SOP8,.23		200	1.27 mm	125 Cel		OPEN-DRAIN	128KX8	128K	-40 Cel		Matte Tin (Sn)	1010MDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	5 ms	I2C	1048576 bit	2.5 V			e3	30	260	.000005 Amp	4.9 mm		5
25LC1024-E/SM16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	5		8	SMALL OUTLINE	SOP8,.3		200	1.27 mm	125 Cel			128KX8	128K	-40 Cel		MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	20 MHz	5.25 mm	6 ms	SPI	1048576 bit	2.5 V	ALSO OPERATES AT 10MHZ		e3	40	260	.00002 Amp	5.26 mm		5
25LC1024T-E/SM16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	5		8	SMALL OUTLINE	SOP8,.3		200	1.27 mm	125 Cel			128KX8	128K	-40 Cel		MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	20 MHz	5.25 mm	6 ms	SPI	1048576 bit	2.5 V	ALSO OPERATES AT 10MHZ		e3	40	260	.00002 Amp	5.26 mm		5
25LC512-E/SN16KVAO	Microchip Technology	EEPROM	MILITARY	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	5		8	SMALL OUTLINE	SOP8,.25		200	1.27 mm	125 Cel		3-STATE	64KX8	64K	-40 Cel				DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	20 MHz	3.9 mm	5 ms	SPI	524288 bit	4.5 V	2.5V TO 5.5V @ 10MHz					.00001 Amp	4.9 mm		5
25LC512T-E/SN16KVAO	Microchip Technology	EEPROM	MILITARY	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	10 mA	65536 words	5		8	SMALL OUTLINE	SOP8,.25		200	1.27 mm	125 Cel		3-STATE	64KX8	64K	-40 Cel				DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	20 MHz	3.9 mm	5 ms	SPI	524288 bit	4.5 V	2.5V TO 5.5V @ 10MHz					.00001 Amp	4.9 mm		5
24FC512-I/SN16KVAO	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	2.5		8	SMALL OUTLINE	SOP8,.23		200	1.27 mm	85 Cel		OPEN-DRAIN	64KX8	64K	-40 Cel			1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	5 ms	I2C	524288 bit	1.7 V						.000001 Amp	4.9 mm		2.5
24LC08BT-E/OT16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	5		8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		200	.95 mm	125 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel			1010XMMR	DUAL	1	HARDWARE	R-PDSO-G5		5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	5 ms	I2C	8192 bit	2.5 V				30	260	.000005 Amp	2.9 mm		5
24LC32AT-E/OT16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	5		8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH				.95 mm	125 Cel			4KX8	4K	-40 Cel				DUAL			R-PDSO-G5		5.5 V	1.45 mm		.4 MHz	1.55 mm	5 ms	I2C	32768 bit	2.5 V							2.9 mm
24LC512T-I/ST16KVAO	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS		65536 words	5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel			64KX8	64K	-40 Cel				DUAL			R-PDSO-G8		5.5 V	1.2 mm		.4 MHz	3 mm	5 ms	I2C	524288 bit	2.5 V							4.4 mm
24LC64-E/SN16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	5		8	SMALL OUTLINE	SOP8,.23		200	1.27 mm	125 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel			1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	5 ms	I2C	65536 bit	2.5 V						.000005 Amp	4.9 mm		5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.