24 Flash Memory 226

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
MT25QL128ABB8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		16777216 words		3	8	GRID ARRAY, THIN PROFILE		1		1 mm	125 Cel		16MX8	16M	-40 Cel			BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm			134217728 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED			8 mm	3
IS25WP064A-RHLE-TR	Integrated Silicon Solution	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8388608 words		1.8	8	GRID ARRAY, THIN PROFILE				1 mm	105 Cel		8MX8	8M	-40 Cel			BOTTOM		R-PBGA-B24		1.95 V	1.2 mm		133 MHz	6 mm			67108864 bit	1.65 V		NOT SPECIFIED	NOT SPECIFIED			8 mm	1.8
MT35XL01GBBA1G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		1073741824 words		3	1	GRID ARRAY, THIN PROFILE				1 mm	105 Cel		1GX1	1G	-40 Cel		TIN SILVER COPPER	BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm			1073741824 bit	2.7 V	e1	30	260			8 mm	3
MT35XL01GBBA2G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		134217728 words		3	8	GRID ARRAY, THIN PROFILE				1 mm	105 Cel		128MX8	128M	-40 Cel		TIN SILVER COPPER	BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm			1073741824 bit	2.7 V	e1	30	260			8 mm	3
MT35XL256ABA1G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		268435456 words		3	1	GRID ARRAY, THIN PROFILE				1 mm	105 Cel		256MX1	256M	-40 Cel		TIN SILVER COPPER	BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm			268435456 bit	2.7 V	e1	30	260			8 mm	3
MT35XL256ABA2G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		33554432 words		3	8	GRID ARRAY, THIN PROFILE				1 mm	105 Cel		32MX8	32M	-40 Cel		TIN SILVER COPPER	BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm			268435456 bit	2.7 V	e1	30	260			8 mm	3
MT35XL512ABA1G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		536870912 words		3	1	GRID ARRAY, THIN PROFILE				1 mm	105 Cel		512MX1	512M	-40 Cel		TIN SILVER COPPER	BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm			536870912 bit	2.7 V	e1	30	260			8 mm	3
MT35XL512ABA2G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		67108864 words		3	8	GRID ARRAY, THIN PROFILE				1 mm	105 Cel		64MX8	64M	-40 Cel		TIN SILVER COPPER	BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm			536870912 bit	2.7 V	e1	30	260			8 mm	3
MT35XU02GCBA2G12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		268435456 words		1.8	8	GRID ARRAY, THIN PROFILE				1 mm	125 Cel		256MX8	256M	-40 Cel		TIN SILVER COPPER	BOTTOM		R-PBGA-B24		2 V	1.2 mm		200 MHz	6 mm			2147483648 bit	1.7 V	e1	30	260			8 mm	1.8
MT35XU256ABA1G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		268435456 words		1.8	1	GRID ARRAY, THIN PROFILE				1 mm	105 Cel		256MX1	256M	-40 Cel		TIN SILVER COPPER	BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm			268435456 bit	1.7 V	e1	30	260			8 mm	1.8
MT35XU256ABA1G12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		268435456 words		1.8	1	GRID ARRAY, THIN PROFILE				1 mm	125 Cel		256MX1	256M	-40 Cel		TIN SILVER COPPER	BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm			268435456 bit	1.7 V	e1	30	260			8 mm	1.8
MT35XU256ABA2G12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		33554432 words		1.8	8	GRID ARRAY, THIN PROFILE				1 mm	125 Cel		32MX8	32M	-40 Cel		TIN SILVER COPPER	BOTTOM		R-PBGA-B24		2 V	1.2 mm		200 MHz	6 mm			268435456 bit	1.7 V	e1	30	260			8 mm	1.8
MT35XU512ABA2G12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		67108864 words		1.8	8	GRID ARRAY, THIN PROFILE				1 mm	125 Cel		64MX8	64M	-40 Cel		TIN SILVER COPPER	BOTTOM		R-PBGA-B24		2 V	1.2 mm		200 MHz	6 mm			536870912 bit	1.7 V	e1	30	260			8 mm	1.8
W25Q01JVTBIQ	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		134217728 words		3	8	GRID ARRAY, THIN PROFILE		2		1 mm	85 Cel		128MX8	128M	-40 Cel			BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm			1073741824 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED			8 mm	3
W25Q128JWBIQ	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	20 mA	16777216 words		1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1	20	1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel			BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.95 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	SPI		134217728 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	8 mm	1.8
N25Q064A13E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	15 mA	8388608 words	COMMON	3	8	GRID ARRAY, THIN PROFILE	BGA24, 5X5, 40		20	1 mm	85 Cel	TOTEM POLE	8MX8	8M	-40 Cel	NO		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm		108 MHz	6 mm	SPI		67108864 bit	2.7 V		NOT SPECIFIED	NOT SPECIFIED		.0001 Amp	8 mm	3
IS25WP512M-RHLA3-TR	Integrated Silicon Solution	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	35 mA	67108864 words		1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	125 Cel	3-STATE	64MX8	64M	-40 Cel		TIN SILVER COPPER	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	1.95 V	1.2 mm	100000 Write/Erase Cycles	112 MHz	6 mm	SPI		536870912 bit	1.7 V		30	260	NOR TYPE	.00026 Amp	8 mm	1.8
MT25QL02GCBB8E12-0SITTR	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	94 mA	268435456 words		3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	85 Cel	3-STATE	256MX8	256M	-40 Cel			BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	SPI	BOTTOM/TOP	2147483648 bit	2.7 V				NOR TYPE	.00013 Amp	8 mm	3
IS25WX256-JHLA3	Integrated Silicon Solution	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	70 mA	33554432 words		1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		100	1 mm	125 Cel	3-STATE	32MX8	32M	-40 Cel			BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.95 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm	SPI		268435456 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	8 mm	9
S25HS02GTFABHV153	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		2147483648 words		1.8	1	GRID ARRAY					105 Cel		2GX1	2G	-40 Cel			BOTTOM		S-PBGA-B24	3	2 V			166 MHz		SPI		2147483648 bit	1.7 V				NOR TYPE			1.8
S26HL02GTFGBHB043	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words		3	1	GRID ARRAY					105 Cel		2GX1	2G	-40 Cel			BOTTOM		S-PBGA-B24	3	3.6 V			133 MHz				2147483648 bit	2.7 V				NOR TYPE			3
S26HL02GTFGBHB050	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words		3	1	GRID ARRAY					105 Cel		2GX1	2G	-40 Cel			BOTTOM		S-PBGA-B24	3	3.6 V			133 MHz				2147483648 bit	2.7 V				NOR TYPE			3
S26HS02GTFPBHM053	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words		1.8	1	GRID ARRAY					125 Cel		2GX1	2G	-40 Cel			BOTTOM		S-PBGA-B24	3	2 V			166 MHz				2147483648 bit	1.7 V				NOR TYPE			1.8
S26HL02GTFGBHM040	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words		3	1	GRID ARRAY					125 Cel		2GX1	2G	-40 Cel			BOTTOM		S-PBGA-B24	3	3.6 V			133 MHz				2147483648 bit	2.7 V				NOR TYPE			3
S26HL02GTFGBHM043	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words		3	1	GRID ARRAY					125 Cel		2GX1	2G	-40 Cel			BOTTOM		S-PBGA-B24	3	3.6 V			133 MHz				2147483648 bit	2.7 V				NOR TYPE			3
S26HS02GTFPBHB053	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words		1.8	1	GRID ARRAY					105 Cel		2GX1	2G	-40 Cel			BOTTOM		S-PBGA-B24	3	2 V			166 MHz				2147483648 bit	1.7 V				NOR TYPE			1.8
S28HS02GTFPBHV053	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		2147483648 words		1.8	1	GRID ARRAY					105 Cel		2GX1	2G	-40 Cel			BOTTOM		S-PBGA-B24	3	2 V			166 MHz				2147483648 bit	1.7 V				NOR TYPE			1.8
S28HS01GTGZBHV033	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		1073741824 words		1.8	1	GRID ARRAY					105 Cel		1GX1	1G	-40 Cel			BOTTOM		S-PBGA-B24	3	2 V			200 MHz		SPI		1073741824 bit	1.7 V				NOR TYPE			1.8
S26HS02GTFPBHM050	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words		1.8	1	GRID ARRAY					125 Cel		2GX1	2G	-40 Cel			BOTTOM		S-PBGA-B24	3	2 V			166 MHz				2147483648 bit	1.7 V				NOR TYPE			1.8
S28HS01GTGZBHB033	Infineon Technologies	FLASH		24	BGA		PLASTIC/EPOXY		1	CMOS	AEC-Q100			SYNCHRONOUS		1073741824 words		1.8		GRID ARRAY					105 Cel		1GX1		-40 Cel			BOTTOM		S-PBGA-B24	3	2 V			200 MHz		SPI		1073741824 bit	1.7 V				NOR TYPE			1.8
S28HS01GTGZBHV030	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		1073741824 words		1.8	1	GRID ARRAY					105 Cel		1GX1	1G	-40 Cel			BOTTOM		S-PBGA-B24	3	2 V			200 MHz		SPI		1073741824 bit	1.7 V				NOR TYPE			1.8
S28HS01GTGZBHM033	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		1073741824 words		1.8	1	GRID ARRAY					125 Cel		1GX1	1G	-40 Cel			BOTTOM		S-PBGA-B24	3	2 V			200 MHz		SPI		1073741824 bit	1.7 V				NOR TYPE			1.8
S28HS01GTGZBHM030	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		1073741824 words		1.8	1	GRID ARRAY					125 Cel		1GX1	1G	-40 Cel			BOTTOM		S-PBGA-B24	3	2 V			200 MHz		SPI		1073741824 bit	1.7 V				NOR TYPE			1.8
S28HS01GTGZBHI033	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		1073741824 words		1.8	1	GRID ARRAY					85 Cel		1GX1	1G	-40 Cel			BOTTOM		S-PBGA-B24	3	2 V			200 MHz		SPI		1073741824 bit	1.7 V				NOR TYPE			1.8
S26HS02GTFPBHM043	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words		1.8	1	GRID ARRAY					125 Cel		2GX1	2G	-40 Cel			BOTTOM		S-PBGA-B24	3	2 V			166 MHz				2147483648 bit	1.7 V				NOR TYPE			1.8
S26HS02GTFPBHM040	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words		1.8	1	GRID ARRAY					125 Cel		2GX1	2G	-40 Cel			BOTTOM		S-PBGA-B24	3	2 V			166 MHz				2147483648 bit	1.7 V				NOR TYPE			1.8
S28HS01GTGZBHA033	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		1073741824 words		1.8	1	GRID ARRAY					85 Cel		1GX1	1G	-40 Cel			BOTTOM		S-PBGA-B24	3	2 V			200 MHz		SPI		1073741824 bit	1.7 V				NOR TYPE			1.8
S28HS01GTGZBHB030	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		1073741824 words		1.8	1	GRID ARRAY					105 Cel		1GX1	1G	-40 Cel			BOTTOM		S-PBGA-B24	3	2 V			200 MHz		SPI		1073741824 bit	1.7 V				NOR TYPE			1.8
S28HS01GTGZBHI030	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS				SYNCHRONOUS		1073741824 words		1.8	1	GRID ARRAY					85 Cel		1GX1	1G	-40 Cel			BOTTOM		S-PBGA-B24	3	2 V			200 MHz		SPI		1073741824 bit	1.7 V				NOR TYPE			1.8
S25HS02GTFABHV150	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		2147483648 words		1.8	1	GRID ARRAY					105 Cel		2GX1	2G	-40 Cel			BOTTOM		S-PBGA-B24	3	2 V			166 MHz				2147483648 bit	1.7 V				NOR TYPE			1.8
S26HS02GTFPBHB043	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words		1.8	1	GRID ARRAY					105 Cel		2GX1	2G	-40 Cel			BOTTOM		S-PBGA-B24	3	2 V			166 MHz				2147483648 bit	1.7 V				NOR TYPE			1.8
S26HS02GTFPBHB050	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words		1.8	1	GRID ARRAY					105 Cel		2GX1	2G	-40 Cel			BOTTOM		S-PBGA-B24	3	2 V			166 MHz				2147483648 bit	1.7 V				NOR TYPE			1.8
S26HL02GTFGBHB053	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words		3	1	GRID ARRAY					105 Cel		2GX1	2G	-40 Cel			BOTTOM		S-PBGA-B24	3	3.6 V			133 MHz				2147483648 bit	2.7 V				NOR TYPE			3
S26HS02GTFPBHB040	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words		1.8	1	GRID ARRAY					105 Cel		2GX1	2G	-40 Cel			BOTTOM		S-PBGA-B24	3	2 V			166 MHz				2147483648 bit	1.7 V				NOR TYPE			1.8
S26HL02GTFGBHB040	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL		SYNCHRONOUS		2147483648 words		3	1	GRID ARRAY					105 Cel		2GX1	2G	-40 Cel			BOTTOM		S-PBGA-B24	3	3.6 V			133 MHz				2147483648 bit	2.7 V				NOR TYPE			3
S28HS02GTFPBHV050	Infineon Technologies	FLASH		24	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL		SYNCHRONOUS		2147483648 words		1.8	1	GRID ARRAY					105 Cel		2GX1	2G	-40 Cel			BOTTOM		S-PBGA-B24	3	2 V			166 MHz				2147483648 bit	1.7 V				NOR TYPE			1.8
S28HS01GTGZBHA030	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	173 mA	134217728 words		1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel			BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	300000 Write/Erase Cycles	200 MHz	8 mm	SPI		1073741824 bit	1.7 V				NOR TYPE	.00016 Amp	8 mm	1.8
S25HS512TDPBHB013	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words		1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel		64MX8	64M	-40 Cel			BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm	SPI		536870912 bit	1.7 V				NOR TYPE	.00034 Amp	8 mm	1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.