24 Flash Memory 226

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
S25HL01GTFABHB033	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm	SPI	1073741824 bit	2.7 V				NOR TYPE	.00056 Amp	8 mm	3
S25HL01GTDPBHM030	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	134217728 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	125 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	2560000 Write/Erase Cycles	133 MHz	8 mm	SPI	1073741824 bit	2.7 V				NOR TYPE	.00056 Amp	8 mm	3
S25HL512TDPBHM010	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	125 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm	SPI	536870912 bit	2.7 V				NOR TYPE	.00034 Amp	8 mm	3
S25HL512TDPBHM013	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	125 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm	SPI	536870912 bit	2.7 V				NOR TYPE	.00034 Amp	8 mm	3
S25HS512TFABHI013	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	85 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm	SPI	536870912 bit	1.7 V				NOR TYPE	.00034 Amp	8 mm	1.8
S25HS512TFABHM010	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	125 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm	SPI	536870912 bit	1.7 V				NOR TYPE	.00034 Amp	8 mm	1.8
S25HS512TFABHM013	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	125 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm	SPI	536870912 bit	1.7 V				NOR TYPE	.00034 Amp	8 mm	1.8
S25HS512TFABHB013	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm	SPI	536870912 bit	1.7 V				NOR TYPE	.00034 Amp	8 mm	1.8
S25HL512TDPBHV013	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm	SPI	536870912 bit	2.7 V				NOR TYPE	.00034 Amp	8 mm	3
S25HL512TDPBHI010	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	85 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm	SPI	536870912 bit	2.7 V				NOR TYPE	.00034 Amp	8 mm	3
S25HL512TFABHB013	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm	SPI	536870912 bit	2.7 V				NOR TYPE	.00034 Amp	8 mm	3
S25HL512TFABHM013	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	3	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	125 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1 mm	1280000 Write/Erase Cycles	166 MHz	8 mm	SPI	536870912 bit	2.7 V				NOR TYPE	.00034 Amp	8 mm	3
S25HS01GTDPBHB030	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	72 mA	134217728 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	2560000 Write/Erase Cycles	133 MHz	8 mm	SPI	1073741824 bit	1.7 V				NOR TYPE	.00051 Amp	8 mm	1.8
S25HS01GTDPBHV033	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	72 mA	134217728 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	2560000 Write/Erase Cycles	133 MHz	8 mm	SPI	1073741824 bit	1.7 V				NOR TYPE	.00051 Amp	8 mm	1.8
S25HS01GTFABHA033	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	72 mA	134217728 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	85 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm	SPI	1073741824 bit	1.7 V				NOR TYPE	.00051 Amp	8 mm	1.8
S25HS01GTFABHB030	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	72 mA	134217728 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel		128MX8	128M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	2560000 Write/Erase Cycles	166 MHz	8 mm	SPI	1073741824 bit	1.7 V				NOR TYPE	.00051 Amp	8 mm	1.8
S25HS512TDPBHB010	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm	SPI	536870912 bit	1.7 V				NOR TYPE	.00034 Amp	8 mm	1.8
S25HS512TDPBHM010	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	125 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm	SPI	536870912 bit	1.7 V				NOR TYPE	.00034 Amp	8 mm	1.8
S25HS512TDPBHV010	Infineon Technologies	FLASH	24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	69 mA	67108864 words	1.8	8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1 mm	1280000 Write/Erase Cycles	133 MHz	8 mm	SPI	536870912 bit	1.7 V				NOR TYPE	.00034 Amp	8 mm	1.8
S25HS02GTDZBHB050	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1.2 mm	300000 Write/Erase Cycles	166 MHz	8 mm	SPI	2147483648 bit	1.7 V				NOR TYPE	.00045 Amp	8 mm	1.8
S25HS02GTDZBHM053	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	125 Cel	3-STATE	256MX8	256M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1.2 mm	300000 Write/Erase Cycles	166 MHz	8 mm	SPI	2147483648 bit	1.7 V				NOR TYPE	.001 Amp	8 mm	1.8
S25HL02GTFABHV150	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	130 mA	268435456 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1.2 mm	2560000 Write/Erase Cycles	166 MHz	8 mm	SPI	2147483648 bit	2.7 V				NOR TYPE	.000045 Amp	8 mm	3
S25HL02GTFABHV153	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	130 mA	268435456 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1.2 mm	2560000 Write/Erase Cycles	166 MHz	8 mm	SPI	2147483648 bit	2.7 V				NOR TYPE	.000045 Amp	8 mm	3
S25HL02GTDPBHV153	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm	SPI	2147483648 bit	2.7 V				NOR TYPE	.000045 Amp	8 mm	3
S25HL02GTDZBHB050	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1.2 mm	300000 Write/Erase Cycles	166 MHz	8 mm	SPI	2147483648 bit	2.7 V				NOR TYPE	.000655 Amp	8 mm	3
S25HS02GTDZBHM050	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	125 Cel	3-STATE	256MX8	256M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1.2 mm	300000 Write/Erase Cycles	166 MHz	8 mm	SPI	2147483648 bit	1.7 V				NOR TYPE	.001 Amp	8 mm	1.8
S25HS02GTDPBHV150	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1.2 mm	300000 Write/Erase Cycles	166 MHz	8 mm	SPI	2147483648 bit	1.7 V				NOR TYPE	.00045 Amp	8 mm	1.8
S25HL02GTDPBHV150	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1.2 mm	2560000 Write/Erase Cycles	133 MHz	8 mm	SPI	2147483648 bit	2.7 V				NOR TYPE	.000045 Amp	8 mm	3
S25HL02GTDZBHB053	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	3.6 V	1.2 mm	300000 Write/Erase Cycles	166 MHz	8 mm	SPI	2147483648 bit	2.7 V				NOR TYPE	.000655 Amp	8 mm	3
S25HS02GTDZBHB053	Infineon Technologies	FLASH	24	TBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	110 mA	268435456 words	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		25	1 mm	105 Cel	3-STATE	256MX8	256M	-40 Cel		BOTTOM	HARDWARE	S-PBGA-B24	3	2 V	1.2 mm	300000 Write/Erase Cycles	166 MHz	8 mm	SPI	2147483648 bit	1.7 V				NOR TYPE	.00045 Amp	8 mm	1.8
MT29F4G01ABAFD12-AUT:F	Micron Technology	FLASH	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	35 mA	536870912 words	3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	10	1 mm	125 Cel	3-STATE	512MX8	512M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	SPI	4294967296 bit	2.7 V	CONFIGURABLE AS 4G X 1			SLC NAND TYPE	.0001 Amp	8 mm	3.3
MT29F4G01ABBFD12-AUT:F	Micron Technology	FLASH	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	35 mA	536870912 words	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	10	1 mm	125 Cel	3-STATE	512MX8	512M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		1.95 V	1.2 mm	100000 Write/Erase Cycles	83 MHz	6 mm	SPI	4294967296 bit	1.7 V	CONFIGURABLE AS 4G X 1			SLC NAND TYPE	.0001 Amp	8 mm	1.8
S79FS01GSFABHB213	Infineon Technologies	FLASH	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	SERIAL	SYNCHRONOUS	200 mA	134217728 words	1.8	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		20	1 mm	105 Cel		128MX8	128M	-40 Cel	TIN SILVER COPPER	BOTTOM	HARDWARE	R-PBGA-B24	3	2 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	SPI	1073741824 bit	1.7 V		e1	260	NOR TYPE	.0006 Amp	8 mm	1.8
MT29F2G01ABAGD12-IT:G	Micron Technology	FLASH	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	35 mA	268435456 words	3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		10	1 mm	85 Cel		256MX8	256M	-40 Cel		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	SPI	2147483648 bit	2.7 V				SLC NAND TYPE	.00005 Amp	8 mm	3.3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.