24 Flash Memory 226

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Programming Voltage (V)
N25Q064A13E14D0E	Micron Technology	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		20 mA	8388608 words		3/3.3	8	GRID ARRAY	BGA24,4X6,40		Flash Memories	20	1 mm	85 Cel	8MX8	8M	-40 Cel		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24				100000 Write/Erase Cycles	108 MHz		Not Qualified	SPI		67108864 bit						NOR TYPE	.0001 Amp
N25Q128A13B1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	20 mA	16777216 words	3	3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	16MX8	16M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified	SPI	BOTTOM	134217728 bit	2.7 V		e1			NOR TYPE	.0001 Amp	8 mm	3
N25Q128A23B1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	20 mA	16777216 words	3	3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	16MX8	16M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified	SPI	BOTTOM	134217728 bit	2.7 V		e1			NOR TYPE	.0001 Amp	8 mm	3
MX25L6435EXCI-10G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		16777216 words	3.3	3/3.3	4	GRID ARRAY, THIN PROFILE		2	Flash Memories	20	1 mm	85 Cel	16MX4	16M	-40 Cel		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified	SPI		67108864 bit	2.7 V	IT ALSO CONFIGURED AS 64M X 1		40	260	NOR TYPE		8 mm	2.7
N25Q128A11E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	20 mA	134217728 words	1.8	1.8	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	128MX1	128M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified	SPI		134217728 bit	1.7 V		e1			NOR TYPE	.00001 Amp	8 mm	3
N25Q128A11E1241E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	20 mA	134217728 words	1.8	1.8	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	128MX1	128M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified	SPI		134217728 bit	1.7 V		e1			NOR TYPE	.00001 Amp	8 mm	3
W25Q32FVTCIG	Winbond Electronics	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	20 mA	33554432 words	3	3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,4X6,40		Flash Memories	20	1 mm	85 Cel	32MX1	32M	-40 Cel		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified	SPI		33554432 bit	2.7 V					NOR TYPE	.00002 Amp	8 mm	2.7
MX25L1606EXCI-12G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	25 mA	2097152 words	3	3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	1	Flash Memories	20	1 mm	85 Cel	2MX8	2M	-40 Cel		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	86 MHz	6 mm	Not Qualified	SPI		16777216 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	8 mm	3
N25Q512A13G1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	15 mA	536870912 words	3		1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	512MX1	512M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm		SPI		536870912 bit	2.7 V		e1	30	260	NOR TYPE	.0005 Amp	8 mm	3
N25Q00AA13G1240E	Micron Technology	FLASH	INDUSTRIAL	24	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	20 mA	1073741824 words	3	3/3.3	1	GRID ARRAY, LOW PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	1GX1	1G	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.3 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified	SPI		1073741824 bit	2.7 V		e1	30	260	NOR TYPE	.0002 Amp	8 mm	3
N25Q512A11G1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		536870912 words	1.8		1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	512MX1	512M	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM			R-PBGA-B24		2 V	1.2 mm		108 MHz	6 mm				536870912 bit	1.7 V		e1	30	260	NOR TYPE		8 mm	1.8
N25Q064A13E1241E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		67108864 words	1.8		1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	64MX1	64M	-40 Cel	TIN SILVER COPPER	BOTTOM			R-PBGA-B24		2 V	1.2 mm		108 MHz	6 mm				67108864 bit	1.7 V		e1			NOR TYPE		8 mm	2.7
N25Q256A13E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	20 mA	268435456 words	3		1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	256MX1	256M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm		108 MHz	6 mm	Not Qualified	SPI		268435456 bit	2.7 V		e1			NOR TYPE	.00025 Amp	8 mm	3
N25Q512A83G1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	15 mA	536870912 words	3		1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	512MX1	512M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm		SPI		536870912 bit	2.7 V		e1			NOR TYPE	.0005 Amp	8 mm	3
N25Q256A83E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		268435456 words	3		1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	256MX1	256M	-40 Cel	TIN SILVER COPPER	BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		108 MHz	6 mm				268435456 bit	2.7 V		e1			NOR TYPE		8 mm	3
N25Q128A13E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	20 mA	134217728 words	3	3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	128MX1	128M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified	SPI		134217728 bit	2.7 V		e1			NOR TYPE	.0001 Amp	8 mm	3
N25Q128A13E1241E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	20 mA	134217728 words	3	3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	128MX1	128M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified	SPI		134217728 bit	2.7 V		e1			NOR TYPE	.0001 Amp	8 mm	3
N25Q256A11E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	20 mA	268435456 words	1.8	1.8	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	256MX1	256M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified	SPI		268435456 bit	1.7 V	SPI-COMPATIBLE SERIAL BUS INTERFACE	e1			NOR TYPE	.00002 Amp	8 mm	1.8
N25Q512A83G12A0F	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		536870912 words	3		1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel	512MX1	512M	-40 Cel		BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		108 MHz	6 mm				536870912 bit	2.7 V					NOR TYPE		8 mm	3
N25Q512A83G12H0F	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		536870912 words	3		1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	512MX1	512M	-40 Cel		BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		108 MHz	6 mm				536870912 bit	2.7 V					NOR TYPE		8 mm	3
N25Q032A13E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	20 mA	33554432 words	3	3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel	32MX1	32M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified	SPI		33554432 bit	2.7 V		e1			NOR TYPE	.0001 Amp	8 mm	3
MX66L51235FXDI-10G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	40 mA	134217728 words	3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel	128MX4	128M	-40 Cel		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified	SPI		536870912 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 512M X 1 BIT		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00004 Amp	8 mm	3
N25Q512A13G1241E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		536870912 words	3		1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	512MX1	512M	-40 Cel	TIN SILVER COPPER	BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		108 MHz	6 mm				536870912 bit	2.7 V		e1			NOR TYPE		8 mm	1.8
N25Q128A13E1440E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		134217728 words	3		1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	128MX1	128M	-40 Cel		BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		108 MHz	6 mm				134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED			8 mm	3
SST26VF032B-104I/TD	Microchip Technology	EEPROM	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	30 mA	4194304 words	3	3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40		Flash Memories	100	1 mm	85 Cel	4MX8	4M	-40 Cel	TIN SILVER COPPER	BOTTOM	1	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	104 MHz	6 mm	Not Qualified	SPI		33554432 bit	2.7 V		e1			NOR TYPE	.000045 Amp	8 mm	3
N25Q00AA11G1240E	Micron Technology	FLASH	INDUSTRIAL	24	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		1073741824 words	1.8		1	GRID ARRAY, LOW PROFILE					1 mm	85 Cel	1GX1	1G	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM			R-PBGA-B24		2 V	1.3 mm		108 MHz	6 mm				1073741824 bit	1.7 V		e1	30	260	NOR TYPE		8 mm	1.8
N25Q256A13E1241E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		268435456 words	3		1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	256MX1	256M	-40 Cel		BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		108 MHz	6 mm				268435456 bit	2.7 V					NOR TYPE		8 mm	3
N25Q256A83E1241E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		268435456 words	3		1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	256MX1	256M	-40 Cel		BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		108 MHz	6 mm				268435456 bit	2.7 V					NOR TYPE		8 mm	3
N25Q256A83E1241F	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		268435456 words	3		1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	256MX1	256M	-40 Cel		BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		108 MHz	6 mm				268435456 bit	2.7 V					NOR TYPE		8 mm	3
N25Q512A83G1241E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		536870912 words	3		1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	512MX1	512M	-40 Cel		BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		108 MHz	6 mm				536870912 bit	2.7 V					NOR TYPE		8 mm	3
MX66L1G45GXDI-10G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		268435456 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	85 Cel	256MX4	256M	-40 Cel	TIN SILVER COPPER	BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		104 MHz	6 mm				1073741824 bit	2.7 V	ALSO IT CAN BE CONFIGURED AS 1G X 1 BIT	e1					8 mm	2.7
MT25QL02GCBA8E12-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	60 mA	536870912 words	3	3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel	512MX4	512M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	SPI		2147483648 bit	2.7 V	MEMORY WIDTH CAN ALSO ORGANISED AS X1	e1			NOR TYPE	.00005 Amp	8 mm	3
MX25U51245GXDI54	Macronix	FLASH	INDUSTRIAL	24	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	35 mA	67108864 words	1.8		8	GRID ARRAY, LOW PROFILE	BGA24,5X5,40	4		20	1 mm	85 Cel	64MX8	64M	-40 Cel		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm		SPI		536870912 bit	1.65 V	IT CAN ALSO CONFIGURED AS 256M X 2 AND 512M X 1				NOR TYPE	.00018 Amp	8 mm	1.8
IS25WP01G-RILE	Integrated Silicon Solution	FLASH	INDUSTRIAL	24	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		134217728 words	1.8		8	GRID ARRAY, LOW PROFILE		1			1 mm	105 Cel	128MX8	128M	-40 Cel		BOTTOM			R-PBGA-B24		1.95 V	1.4 mm		104 MHz	6 mm				1073741824 bit	1.7 V							8 mm	1.8
MX25L51245GXDJ-10G	Macronix	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		134217728 words	3		4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel	128MX4	128M	-40 Cel		BOTTOM			R-PBGA-B24		3.6 V	1.2 mm		104 MHz	6 mm				536870912 bit	2.7 V	ALSO CONFIGURED WITH 1-BIT WIDTH		NOT SPECIFIED	NOT SPECIFIED			8 mm	3
MT25QU256ABA8E12-0AUTTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS	35 mA	33554432 words	1.8		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel	32MX8	32M	-40 Cel		BOTTOM		HARDWARE/SOFTWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	166 MHz	6 mm		SPI		268435456 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00018 Amp	8 mm	1.8
MT35XL01GBBA1G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		134217728 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel	128MX8	128M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		1073741824 bit	2.7 V		e1	30	260	NOR TYPE		8 mm	3
MT35XL01GBBA1G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		134217728 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	128MX8	128M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		1073741824 bit	2.7 V		e1	30	260	NOR TYPE		8 mm	3
MT35XL01GBBA2G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		134217728 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel	128MX8	128M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		1073741824 bit	2.7 V		e1	30	260	NOR TYPE		8 mm	3
MT35XL01GBBA2G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		134217728 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	128MX8	128M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		1073741824 bit	2.7 V		e1	30	260	NOR TYPE		8 mm	3
MT35XL02GCBA1G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		268435456 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	256MX8	256M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		2147483648 bit	2.7 V		e1	30	260	NOR TYPE		8 mm	3
MT35XL02GCBA2G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		268435456 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	256MX8	256M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		2147483648 bit	2.7 V		e1	30	260	NOR TYPE		8 mm	3
MT35XL256ABA1G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		33554432 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel	32MX8	32M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		268435456 bit	2.7 V		e1	30	260	NOR TYPE		8 mm	3
MT35XL256ABA2G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		33554432 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel	32MX8	32M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		268435456 bit	2.7 V		e1	30	260	NOR TYPE		8 mm	3
MT35XL512ABA1G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		67108864 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel	64MX8	64M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		536870912 bit	2.7 V		e1	30	260	NOR TYPE		8 mm	3
MT35XL512ABA1G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		67108864 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	64MX8	64M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		536870912 bit	2.7 V		e1	30	260	NOR TYPE		8 mm	3
MT35XL512ABA2G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		67108864 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel	64MX8	64M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		536870912 bit	2.7 V		e1	30	260	NOR TYPE		8 mm	3
MT35XL512ABA2G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		67108864 words	3		8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel	64MX8	64M	-40 Cel	TIN SILVER COPPER	BOTTOM		HARDWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm		SPI		536870912 bit	2.7 V		e1	30	260	NOR TYPE		8 mm	3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.