48 Flash Memory 194

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
SST39VF1601-70-4C-B3KE-T	Microchip Technology	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K	35 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	512	YES	TIN SILVER COPPER		BOTTOM	1	R-PBGA-B48		3.6 V	1.2 mm	100000 Write/Erase Cycles	6 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.00002 Amp	8 mm	YES	70 ns	3	YES
MT29F16G08AJADAWP:D	Micron Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	35 mA	2147483648 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		2GX8	2G	0 Cel	16K	YES		YES	DUAL		R-PDSO-G48						Not Qualified		17179869184 bit			2K				SLC NAND TYPE	.0001 Amp			25 ns		NO
MT29F16G08ABACAWP:C	Micron Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		512K	50 mA	2147483648 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		2GX8	2G	0 Cel	4K	YES		YES	DUAL		R-PDSO-G48						Not Qualified		17179869184 bit			4K				SLC NAND TYPE	.00005 Amp			20 ns		NO
MT29F32G08ABAAAWP:A	Micron Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		1M	50 mA	4294967296 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		4GX8	4G	0 Cel	4K	YES		YES	DUAL		R-PDSO-G48						Not Qualified		34359738368 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F64G08AFAAAWP:A	Micron Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		1M	50 mA	8589934592 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		8GX8	8G	0 Cel	8K	YES		YES	DUAL		R-PDSO-G48						Not Qualified		68719476736 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F128G08AJAAAWP:A	Micron Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		1M	50 mA	17179869184 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		16GX8	16G	0 Cel	16K	YES		YES	DUAL		R-PDSO-G48						Not Qualified		137438953472 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F128G08AJAAAWP-IT:A	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		1M	50 mA	17179869184 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		16GX8	16G	-40 Cel	16K	YES		YES	DUAL		R-PDSO-G48						Not Qualified		137438953472 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
SST39VF3201C-70-4I-B3KE-T	Microchip Technology	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	15 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM	1	R-PBGA-B48		3.6 V	1.2 mm	100000 Write/Erase Cycles	6 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.00005 Amp	8 mm	YES	70 ns	3	YES
SST39VF3202C-70-4I-B3KE-T	Microchip Technology	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	15 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM	1	R-PBGA-B48		3.6 V	1.2 mm	100000 Write/Erase Cycles	6 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE	.00005 Amp	8 mm	YES	70 ns	3	YES
SST39VF6401B-70-4C-B1KE-T	Microchip Technology	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K	35 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	2K	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	1	R-PBGA-B48		3.6 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V			e1			NOR TYPE	.00002 Amp	10 mm	YES	70 ns	3	YES
SST39VF6401B-70-4C-EKE-T	Microchip Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K	35 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	100	.5 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	2K	YES	MATTE TIN		DUAL	1	R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V			e3			NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
SST38VF6401-90-5I-B3KE-T	Microchip Technology	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K	50 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM	1	R-PBGA-B48		3.6 V	1.2 mm	100000 Write/Erase Cycles	6 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK	4	e1			NOR TYPE	.00003 Amp	8 mm	YES	90 ns	3	YES
MT29F32G08ABAAAWP-Z:A	Micron Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		1M	50 mA	4294967296 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		4GX8	4G	0 Cel	4K	YES		YES	DUAL		R-PDSO-G48						Not Qualified		34359738368 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F64G08AFAAAWP-Z:A	Micron Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		1M	50 mA	8589934592 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		8GX8	8G	0 Cel	8K	YES		YES	DUAL		R-PDSO-G48						Not Qualified		68719476736 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F128G08AJAAAWP-Z:A	Micron Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		1M	50 mA	17179869184 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		16GX8	16G	0 Cel	16K	YES		YES	DUAL		R-PDSO-G48						Not Qualified		137438953472 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
SST39VF3202C-70-4I-B3KE	Microchip Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	45 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	6 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT-BLOCK		e1	40	260	NOR TYPE	.00005 Amp	8 mm	YES	70 ns	3	YES
NAND512W3A2SN6E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			67108864 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		64MX8	64M	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified		536870912 bit	2.7 V			e4	30	260	SLC NAND TYPE		18.4 mm			3
SST39LF401C-55-4C-B3KE	Microchip Technology	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	30 mA	262144 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	6 mm	Not Qualified	BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK		e1	40	260	NOR TYPE	.00002 Amp	8 mm	YES	55 ns	3.3	YES
SST39LF402C-55-4C-B3KE	Microchip Technology	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	30 mA	262144 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	6 mm	Not Qualified	TOP	4194304 bit	3 V	TOP BOOT BLOCK		e1	40	260	NOR TYPE	.00002 Amp	8 mm	YES	55 ns	3.3	YES
SST39VF402C-70-4I-B3KE	Microchip Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	30 mA	262144 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	100	.8 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM	1	R-PBGA-B48	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	6 mm	Not Qualified	TOP	4194304 bit	2.7 V	TOP BOOT BLOCK		e1	40	260	NOR TYPE	.00002 Amp	8 mm	YES	70 ns	3	YES
TC58NVG1S3ETAI0	Toshiba	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	128K	30 mA	268435456 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			Not Qualified		2147483648 bit	2.7 V		2K					.00005 Amp	18.4 mm		25 ns	3.3	NO
NAND128W3AABN6E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			16777216 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		16MX8	16M	-40 Cel			Matte Tin (Sn)		DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm			134217728 bit	2.7 V			e3	30	260	SLC NAND TYPE		18.4 mm		35 ns	3
M29W800FB70ZA3SE	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	125 Cel		512KX16	512K	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm		6 mm		BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK		e1					8 mm		70 ns	3
M29W800FT70ZA3SE	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	125 Cel		512KX16	512K	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm		6 mm		TOP	8388608 bit	3 V	TOP BOOT BLOCK		e1					8 mm		70 ns	3
MX30LF1G08AA-TI	Macronix	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	128K	30 mA	134217728 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified		1073741824 bit	2.7 V		2K	e3	30	260	SLC NAND TYPE	.00005 Amp	18.4 mm		25 ns	3.3	NO
SST39VF3201-70-4C-EKE-T	Microchip Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K	35 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	100	.5 mm	70 Cel	3-STATE	2MX16	2M	0 Cel	1K	YES	MATTE TIN		DUAL	1	R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
SST39VF3201-70-4I-EKE-T	Microchip Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	2K	35 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	100	.5 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	1K	YES	MATTE TIN		DUAL	1	R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.00002 Amp	18.4 mm	YES	70 ns	3	YES
JR28F032M29EWBA	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	MATTE TIN	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V		8/16	e3			NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
JR28F032M29EWHA	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	25 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	64	YES	MATTE TIN	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		33554432 bit	2.7 V		8/16	e3			NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
JR28F032M29EWLA	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	25 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	64	YES	MATTE TIN	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		33554432 bit	2.7 V		8/16	e3			NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
JR28F032M29EWTA	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	MATTE TIN	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	TOP	33554432 bit	2.7 V		8/16	e3			NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
JR28F064M29EWBA	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	MATTE TIN	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V		8/16	e3			NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
JR28F064M29EWHA	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	25 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	Matte Tin (Sn)	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		67108864 bit	2.7 V		8/16	e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
JR28F064M29EWLA	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	25 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	MATTE TIN	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		67108864 bit	2.7 V		8/16	e3			NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
JR28F064M29EWTA	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	Matte Tin (Sn)	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	TOP	67108864 bit	2.7 V		8/16	e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
NAND128W3A2BNXE	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	16777216 words	3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		16MX8	16M	-40 Cel	1K	YES	MATTE TIN	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		134217728 bit	2.7 V		512	e3			SLC NAND TYPE	.00005 Amp	18.4 mm		45 ns	3	NO
NAND256W3A2BNXE	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	33554432 words	3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		32MX8	32M	-40 Cel	2K	YES	MATTE TIN	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		268435456 bit	2.7 V		512	e3			SLC NAND TYPE	.00005 Amp	18.4 mm		45 ns	3	NO
PZ28F032M29EWBA	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48		3.6 V	1 mm		6 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	8 mm	YES	65 ns	3	YES
PZ28F032M29EWHA	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	25 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	64	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48		3.6 V	1 mm		6 mm	Not Qualified		33554432 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	8 mm	YES	65 ns	3	YES
PZ28F064M29EWBA	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48		3.6 V	1 mm		6 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	8 mm	YES	60 ns	3	YES
PZ28F064M29EWHA	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	25 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48		3.6 V	1 mm		6 mm	Not Qualified		67108864 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	8 mm	YES	65 ns	3	YES
PZ28F064M29EWLA	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	25 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48		3.6 V	1 mm		6 mm	Not Qualified		67108864 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	8 mm	YES	65 ns	3	YES
PZ28F064M29EWLX	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	25 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48		3.6 V	1 mm		6 mm	Not Qualified		67108864 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	8 mm	YES	65 ns	3	YES
PZ28F064M29EWTA	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM		R-PBGA-B48		3.6 V	1 mm		6 mm	Not Qualified	TOP	67108864 bit	2.7 V		8/16	e1	30	260	NOR TYPE	.00012 Amp	8 mm	YES	65 ns	3	YES
PZ28F064M29EWTX	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48		3.6 V	1 mm		6 mm	Not Qualified	TOP	67108864 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	8 mm	YES	65 ns	3	YES
MT29F2G16ABAEAWP-IT:E	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	35 mA	134217728 words	3.3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		128MX16	128M	-40 Cel	2K	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		2147483648 bit	2.7 V		1K				SLC NAND TYPE	.0001 Amp	18.4 mm		25 ns	2.7	NO
MT29F2G16ABAEAWP:E	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	35 mA	134217728 words	3.3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		128MX16	128M	0 Cel	2K	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		2147483648 bit	2.7 V		1K				SLC NAND TYPE	.0001 Amp	18.4 mm		25 ns	2.7	NO
MT29F16G08AJADAWP-IT:D	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	35 mA	2147483648 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		2GX8	2G	-40 Cel	16K	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		17179869184 bit	2.7 V		2K		30	260	SLC NAND TYPE	.0001 Amp	18.4 mm		25 ns	3.3	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.