48 Flash Memory 194

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MT29F4G16ABADAWP-IT:D	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	35 mA	268435456 words	3.3	NO	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		256MX16	256M	-40 Cel	4K	YES		YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		4294967296 bit	2.7 V		1K		30	260	SLC NAND TYPE	.0001 Amp	18.4 mm		25 ns	3.3	NO
MT29F4G16ABADAWP:D	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	35 mA	268435456 words	3.3	NO	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		256MX16	256M	0 Cel	4K	YES		YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		4294967296 bit	2.7 V		1K		30	260	SLC NAND TYPE	.0001 Amp	18.4 mm		25 ns		NO
M29W640GB7AN6E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		4MX16	4M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm		BOTTOM	67108864 bit	2.7 V			e3			NOR TYPE		18.4 mm		70 ns	3
MT29F2G08AADWP-ET:DTR	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		256MX8	256M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48	3.6 V	1.2 mm					2147483648 bit	2.7 V			e3			SLC NAND TYPE		18.4 mm			3.3
MT29F16G08ABACAWP-IT:C	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	512K	50 mA	2147483648 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		2GX8	2G	-40 Cel	4K	YES	Matte Tin (Sn)	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		17179869184 bit	2.7 V		4K	e3	30	260	SLC NAND TYPE	.00005 Amp	18.4 mm		30 ns	2.7	NO
MT29F128G08CFAAAWP:A	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			17179869184 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		16GX8	16G	0 Cel			Matte Tin (Sn)		DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm			137438953472 bit	2.7 V			e3	30	260	MLC NAND TYPE		18.4 mm			2.7
MT29F128G08CFAAAWPIT:A	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			17179869184 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		16GX8	16G	-40 Cel			Matte Tin (Sn)		DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm			137438953472 bit	2.7 V			e3	30	260	MLC NAND TYPE		18.4 mm			2.7
MT29F128G08CFAAAWPITZ:A	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			17179869184 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		16GX8	16G	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm			137438953472 bit	2.7 V			e3			MLC NAND TYPE		18.4 mm			2.7
MT29F128G08CFAAAWPZ:A	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			17179869184 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		16GX8	16G	0 Cel			MATTE TIN		DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm			137438953472 bit	2.7 V			e3			MLC NAND TYPE		18.4 mm			2.7
MT29F128G08CFAABWP-12:A	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		16GX8	16G	0 Cel			Matte Tin (Sn)		DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm			137438953472 bit	2.7 V			e3	30	260	MLC NAND TYPE		18.4 mm			2.7
MT29F128G08CFAABWP-12Z:A	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		16GX8	16G	0 Cel			MATTE TIN		DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm			137438953472 bit	2.7 V			e3			MLC NAND TYPE		18.4 mm			2.7
MT29F256G08CJAAAWP:A	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			34359738368 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		32GX8	32G	0 Cel			Matte Tin (Sn)		DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm			274877906944 bit	2.7 V			e3	30	260	MLC NAND TYPE		18.4 mm			2.7
MT29F256G08CJAAAWPIT:A	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			34359738368 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		32GX8	32G	-40 Cel			Matte Tin (Sn)		DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm			274877906944 bit	2.7 V			e3	30	260	MLC NAND TYPE		18.4 mm			2.7
MT29F256G08CJAAAWPITZ:A	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			34359738368 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		32GX8	32G	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm			274877906944 bit	2.7 V			e3			MLC NAND TYPE		18.4 mm			2.7
MT29F256G08CJAAAWPZ:A	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			34359738368 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		32GX8	32G	0 Cel			MATTE TIN		DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm			274877906944 bit	2.7 V			e3			MLC NAND TYPE		18.4 mm			2.7
MT29F256G08CJAABWP-12:A	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		32GX8	32G	0 Cel			Matte Tin (Sn)		DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm			274877906944 bit	2.7 V			e3	30	260	MLC NAND TYPE		18.4 mm			2.7
MT29F256G08CJAABWP-12Z:A	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		32GX8	32G	0 Cel			MATTE TIN		DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm			274877906944 bit	2.7 V			e3			MLC NAND TYPE		18.4 mm			2.7
MT29F64G08CBAAAWP:A	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8589934592 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		8GX8	8G	0 Cel			Matte Tin (Sn)		DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm			68719476736 bit	2.7 V			e3	30	260	MLC NAND TYPE		18.4 mm			2.7
MT29F64G08CBAAAWPIT:A	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8589934592 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		8GX8	8G	-40 Cel			Matte Tin (Sn)		DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm			68719476736 bit	2.7 V			e3	30	260	MLC NAND TYPE		18.4 mm			2.7
MT29F64G08CBAAAWPZ:A	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			8589934592 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		8GX8	8G	0 Cel			MATTE TIN		DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm			68719476736 bit	2.7 V			e3			MLC NAND TYPE		18.4 mm			2.7
MT29F64G08CBAABWP-12Z:A	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		8GX8	8G	0 Cel			MATTE TIN		DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm			68719476736 bit	2.7 V			e3			MLC NAND TYPE		18.4 mm			2.7
MT29F16G08ABABAWP:B	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	512K	50 mA	2147483648 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		2GX8	2G	0 Cel	4K	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		17179869184 bit	2.7 V		4K	e3			SLC NAND TYPE	.00005 Amp	18.4 mm		20 ns	2.7	NO
MT29F16G08ABABAWP-IT:B	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	512K	50 mA	2147483648 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		2GX8	2G	-40 Cel	4K	YES	Matte Tin (Sn)	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		17179869184 bit	2.7 V		4K	e3	30	260	SLC NAND TYPE	.00005 Amp	18.4 mm		20 ns	2.7	NO
MT29F32G08AFABAWP:B	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	512K	50 mA	4294967296 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		4GX8	4G	0 Cel	8K	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		34359738368 bit	2.7 V		4K	e3			SLC NAND TYPE		18.4 mm		20 ns	2.7	NO
MT29F32G08AFABAWP-IT:B	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4294967296 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		4GX8	4G	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm			34359738368 bit	2.7 V			e3			SLC NAND TYPE		18.4 mm			2.7
MT29F64G08AJABAWP:B	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	512K	50 mA	8589934592 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		8GX8	8G	0 Cel	16K	YES	Matte Tin (Sn)	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		68719476736 bit	2.7 V		4K	e3	30	260	SLC NAND TYPE	.00005 Amp	18.4 mm		20 ns	2.7	NO
MT29F64G08AJABAWP-IT:B	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	512K	50 mA	8589934592 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		8GX8	8G	-40 Cel	16K	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		68719476736 bit	2.7 V		4K	e3	30	260	SLC NAND TYPE	.00005 Amp	18.4 mm		20 ns	2.7	NO
MT29F16G08ABACAWP-ITZ:C	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			2147483648 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		2GX8	2G	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm			17179869184 bit	2.7 V			e3	30	260	SLC NAND TYPE		18.4 mm			2.7
SST38VF6401B-70I/TV	Microchip Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	PARALLEL	ASYNCHRONOUS	32K	50 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	100	.5 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	128	YES	MATTE TIN	YES	DUAL	1	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V		8	e3			NOR TYPE	.00004 Amp	18.4 mm	YES	70 ns	3	YES
MT29F2G08ABAEAWP-ITX:E	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		256MX8	256M	-40 Cel			Matte Tin (Sn)		DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm			2147483648 bit	2.7 V			e3	30	260	SLC NAND TYPE		18.4 mm			2.7
MT29F1G08ABADAWP-IT:D	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	35 mA	134217728 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES	TIN	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		1073741824 bit	2.7 V		2K	e3	30	260	SLC NAND TYPE	.0001 Amp	18.4 mm		25 ns	3.3	NO
MT29F1G08ABADAWP-ITX:D	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	35 mA	134217728 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES	TIN	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		1073741824 bit	2.7 V		2K	e3	30	260	SLC NAND TYPE	.0001 Amp	18.4 mm		25 ns	3.3	NO
MT29F64G08AFAAAWP-IT:A	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	1M	50 mA	8589934592 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		8GX8	8G	-40 Cel	8K	YES	Tin (Sn)	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		68719476736 bit	2.7 V		8K	e3			MLC NAND TYPE	.00001 Amp	18.4 mm		20 ns	3.3	NO
MT29F8G08ABABAWP-IT:B	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	512K	50 mA	1073741824 words	3.3	NO		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20			10	.5 mm	85 Cel	3-STATE	1GX8	1G	-40 Cel	2K	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm			8589934592 bit	2.7 V		4K	e3			SLC NAND TYPE	.00005 Amp	18.4 mm				NO
MT28F800B3WG-9BET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	25 mA	524288 words	3.3	NO	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	8388608 bit	3 V	100,000 ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		90 ns	3	NO
MT28F800B3WG-9B	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	25 mA	524288 words	3.3	NO	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	8388608 bit	3 V	100,000 ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		90 ns	3	NO
MT28F800B3WG-9TET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	25 mA	524288 words	3.3	NO	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	8388608 bit	3 V	100,000 ERASE CYCLES; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		90 ns	3	NO
MT28F800B3WG-9T	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	25 mA	524288 words	3.3	NO	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	8388608 bit	3 V	100,000 ERASE CYCLES; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		90 ns	3	NO
MT28F800B5WG-8BET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	100,000 ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F800B5WG-8B	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	100,000 ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F800B5WG-8TET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified	TOP	8388608 bit	4.5 V	100,000 ERASE CYCLES; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F800B5WG-8T	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified	TOP	8388608 bit	4.5 V	100,000 ERASE CYCLES; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F400B5WG-8BET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	262144 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	USER SELECTABLE 5V OR 12V VPP; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F400B5WG-8B	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	262144 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	ALSO CONFG AS 256KX16; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F400B5WG-8TET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	262144 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified	TOP	4194304 bit	4.5 V	USER SELECTABLE 5V OR 12V VPP; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F400B5WG-8T	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	262144 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,3	YES	Tin/Lead (Sn/Pb)		DUAL		R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified	TOP	4194304 bit	4.5 V	INPUTS & OUTPUTS FULLY TTL COMPATIBLE; CONFG 5V OR 12V VPP; TOP BOOT BLOCK		e0	30	235	NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
AT49BV8192A-11CI	Atmel	FLASH	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,992K	50 mA	524288 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	8	Flash Memories		.75 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1	YES	TIN LEAD		BOTTOM		S-PBGA-B48	3.6 V	1.25 mm		7 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	HARDWARE DATA PROTECTION		e0			NOR TYPE	.00005 Amp	7 mm		110 ns	3	YES
AT49BV1614-90TI	Atmel	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,32K,64K	50 mA	1048576 words	3	YES	3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	8,2,30	YES	TIN LEAD	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V			e0			NOR TYPE	.00001 Amp	18.4 mm		90 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.