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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M28W320CT90N6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3	NO	3,3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	TIN LEAD		DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	NO
M29W200BB55N1	STMicroelectronics	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel	128KX16	128K	0 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	2097152 bit	3 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	20 mm		55 ns	3	YES
M29W200BB70N1	STMicroelectronics	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel	128KX16	128K	0 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	2097152 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	20 mm		70 ns	2.7	YES
M29W200BB70N6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	128KX16	128K	-40 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	2097152 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	20 mm		70 ns	2.7	YES
M29W200BT55N1	STMicroelectronics	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel	128KX16	128K	0 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	2097152 bit	3 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	20 mm		55 ns	3	YES
M29F400BB70N3T	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel	256KX16	256K	-40 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M29W400BT55ZA1	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel	256KX16	256K	0 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48		3.6 V	1.2 mm	100000 Write/Erase Cycles	6 mm	Not Qualified	TOP	4194304 bit	3 V	TOP BOOT BLOCK		e1			NOR TYPE	.0001 Amp	9 mm		55 ns	3	YES
AT49BV802D-70TU	Atmel	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	512KX16	512K	-40 Cel	8,15	YES	MATTE TIN	YES	DUAL	R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	8388608 bit	2.65 V		4/8	e3		260	NOR TYPE	.000025 Amp	18.4 mm	YES	70 ns	3	YES
AT49BV802DT-70TU	Atmel	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	512KX16	512K	-40 Cel	8,15	YES	MATTE TIN	YES	DUAL	R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified	TOP	8388608 bit	2.65 V		4/8	e3		260	NOR TYPE	.000025 Amp	18.4 mm	YES	70 ns	3	YES
TC58NVG3S0FTA00	Toshiba	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1073741824 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel	1GX8	1G	0 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm			8589934592 bit	2.7 V								18.4 mm			3.3
MT29F1G08ABADAWP:D	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	35 mA	134217728 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	.5 mm	70 Cel	128MX8	128M	0 Cel	1K	YES	Matte Tin (Sn)	YES	DUAL	R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified		1073741824 bit	2.7 V		2K	e3	30	260	SLC NAND TYPE	.0001 Amp	18.4 mm		25 ns	3.3	NO
MX29LV320EBXEI-70G	Macronix	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	30 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM	R-PBGA-B48		3.6 V	1.3 mm		6 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e1	10	260	NOR TYPE	.000015 Amp	8 mm	YES	70 ns	3	YES
MT28F400B3WG-8BET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	30 mA	262144 words	3.3	NO	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	256KX16	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	3	NO
MT28F400B3WG-8B	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	30 mA	262144 words	3.3	NO	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel	256KX16	256K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	3	NO
MT28F400B3WG-8TET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	30 mA	262144 words	3.3	NO	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	256KX16	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	4194304 bit	3 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	3	NO
MT28F400B3WG-8T	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	30 mA	262144 words	3.3	NO	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel	256KX16	256K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	4194304 bit	3 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	3	NO
M29F800DB55N1	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel	512KX16	512K	0 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.00015 Amp	18.4 mm	YES	55 ns	5	YES
M29F800DB55N6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.00015 Amp	18.4 mm	YES	55 ns	5	YES
M29F800DB70N1	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel	512KX16	512K	0 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.00015 Amp	18.4 mm	YES	70 ns	5	YES
M29F800DB70N6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.00015 Amp	18.4 mm	YES	70 ns	5	YES
M29F800DT55N1	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel	512KX16	512K	0 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified	TOP	8388608 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.00015 Amp	18.4 mm	YES	55 ns	5	YES
M29F800DT55N6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified	TOP	8388608 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.00015 Amp	18.4 mm	YES	55 ns	5	YES
M29F800DT70N1	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel	512KX16	512K	0 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified	TOP	8388608 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.00015 Amp	18.4 mm	YES	70 ns	5	YES
AT49BV322AT-70TI	Atmel	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	2097152 words	2.7	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified	TOP	33554432 bit	2.65 V	TOP/BOTTOM BOOT BLOCK		e0	30	240	NOR TYPE	.000025 Amp	18.4 mm	YES	70 ns	3	YES
M29F800DB70N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	512KX16	512K	-40 Cel	1,2,1,15	YES	TIN BISMUTH	YES	DUAL	R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e6		260	NOR TYPE	.00015 Amp	18.4 mm	YES	70 ns	5	YES
M29F800DT70N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	512KX16	512K	-40 Cel	1,2,1,15	YES	TIN BISMUTH	YES	DUAL	R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified	TOP	8388608 bit	4.5 V	TOP BOOT BLOCK		e6		260	NOR TYPE	.00015 Amp	18.4 mm	YES	70 ns	5	YES
AT49BV162A-70TI	Atmel	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	16777216 bit	2.65 V			e0			NOR TYPE	.000025 Amp	18.4 mm	YES	70 ns	3	YES
MT28F800B3WP-9B	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	25 mA	524288 words	3.3	NO	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel	512KX16	512K	0 Cel	1,2,1,7	YES	MATTE TIN		DUAL	R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK		e3		260	NOR TYPE	.000005 Amp	18.4 mm		90 ns	3	NO
MT28F800B3WP-9T	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	25 mA	524288 words	3.3	NO	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel	512KX16	512K	0 Cel	1,2,1,7	YES	MATTE TIN		DUAL	R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	8388608 bit	3 V	TOP BOOT BLOCK		e3		260	NOR TYPE	.000005 Amp	18.4 mm		90 ns	3	NO
MT28F800B5WP-8BET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	512KX16	512K	-40 Cel	1,2,1,7	YES	MATTE TIN		DUAL	R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e3		260	NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F800B5WP-8B	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel	512KX16	512K	0 Cel	1,2,1,7	YES	MATTE TIN		DUAL	R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e3		260	NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F800B5WP-8T	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel	512KX16	512K	0 Cel	1,2,1,7	YES	MATTE TIN		DUAL	R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified	TOP	8388608 bit	4.5 V	TOP BOOT BLOCK		e3		260	NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F400B5WP-8B	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	262144 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel	256KX16	256K	0 Cel	1,2,1,3	YES	MATTE TIN		DUAL	R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e3		260	NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F400B5WP-8TET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	262144 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	256KX16	256K	-40 Cel	1,2,1,3	YES	MATTE TIN		DUAL	R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified	TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e3		260	NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F400B5WP-8T	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	262144 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel	256KX16	256K	0 Cel	1,2,1,3	YES	MATTE TIN		DUAL	R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified	TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e3		260	NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT29F2G08AACWP:CTR	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel	256MX8	256M	0 Cel			MATTE TIN		DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		2147483648 bit	2.7 V			e3			SLC NAND TYPE		18.4 mm			3
MX29LV400CBTI-70G	Macronix	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	4MX16	4M	-40 Cel	1,2,1,7	YES	Tin (Sn)	YES	DUAL	R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V			e3			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
MX29LV800CBXEI-70G	Macronix	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	8MX16	8M	-40 Cel	1,2,1,15	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48		3.6 V	1.3 mm		6 mm	Not Qualified	BOTTOM	134217728 bit	2.7 V			e1			NOR TYPE	.000005 Amp	8 mm	YES	70 ns	3	YES
W19B320ABT7H	Winbond Electronics	FLASH	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	45 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	2MX16	2M	-20 Cel	8,63	YES	MATTE TIN	YES	DUAL	R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V			e3			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
MT29F4G08BABWPET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel	512MX8	512M	-40 Cel	4K	YES	MATTE TIN	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		4294967296 bit	2.7 V		2K	e3			SLC NAND TYPE	.0001 Amp	18.4 mm		18 ns	2.7	NO
M29F200BB50N3	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel	128KX16	128K	-40 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		50 ns	5	YES
M29F200BB70N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	128KX16	128K	-40 Cel	1,2,1,3	YES	MATTE TIN/TIN BISMUTH	YES	DUAL	R-PDSO-G48		5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M29F200BT70N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	128KX16	128K	-40 Cel	1,2,1,3	YES	MATTE TIN/TIN BISMUTH	YES	DUAL	R-PDSO-G48		5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M29W200BB70N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	128KX16	128K	-40 Cel	1,2,1,3	YES	MATTE TIN/TIN BISMUTH	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	2097152 bit	2.7 V	BOTTOM BOOT BLOCK		e3/e6	40	260	NOR TYPE	.0001 Amp	20 mm		70 ns	2.7	YES
M29W200BT70N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	128KX16	128K	-40 Cel	1,2,1,3	YES	MATTE TIN/TIN BISMUTH	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	2097152 bit	2.7 V	TOP BOOT BLOCK		e3/e6	40	260	NOR TYPE	.0001 Amp	20 mm		70 ns	2.7	YES
AT49BV163D-70TU	Atmel	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES	MATTE TIN	YES	DUAL	R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	16777216 bit	2.65 V			e3		260	NOR TYPE	.000025 Amp	18.4 mm	YES	70 ns	3	YES
M29F400BB70N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	256KX16	256K	-40 Cel	1,2,1,7	YES	MATTE TIN/TIN BISMUTH	YES	DUAL	R-PDSO-G48		5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M29F400BT70N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G48		5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	4194304 bit	4.5 V	TOP BOOT BLOCK		e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.