64 Flash Memory 169

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
PC28F640P33TF60A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	28 mA	4194304 words		NO	2.5/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	4,63	YES			BOTTOM	S-PBGA-B64				Not Qualified	TOP	67108864 bit			8				NOR TYPE	.002 Amp		YES	60 ns		NO
RC48F4400P0VB00A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	51 mA	33554432 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	32MX16	32M	-40 Cel	8, 510	YES			BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM	536870912 bit			4				NOR TYPE	.000005 Amp		YES	85 ns		NO
PC28F320J3F75E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	80 mA	2097152 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	32	YES		YES	BOTTOM	S-PBGA-B64				Not Qualified		33554432 bit			4/8		30	260	NOR TYPE	.00012 Amp		YES	75 ns		NO
PC28F128J3F75D	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	80 mA	8388608 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES		YES	BOTTOM	S-PBGA-B64				Not Qualified		134217728 bit			4/8		30	260	NOR TYPE	.00012 Amp		YES	75 ns		NO
RC28F640P30TF65A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	50 mA	4194304 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	4,63	YES			BOTTOM	S-PBGA-B64				Not Qualified	TOP	67108864 bit			8				NOR TYPE	.000055 Amp		YES	65 ns		NO
PC28F128P30BF65E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	50 mA	8388608 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	4,127	YES			BOTTOM	S-PBGA-B64				Not Qualified	BOTTOM	134217728 bit			8				NOR TYPE	.000055 Amp		YES	65 ns		NO
M29W128GL70ZA6DE	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES		YES	BOTTOM	S-PBGA-B64				Not Qualified		134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
M29W128GSH70ZA6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES		YES	BOTTOM	S-PBGA-B64				Not Qualified		134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
M29W128GSH70ZS6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES		YES	BOTTOM	S-PBGA-B64				Not Qualified		134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
M29W128GSL70ZA6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES		YES	BOTTOM	S-PBGA-B64				Not Qualified		134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
M29W128GSL70ZS6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES		YES	BOTTOM	S-PBGA-B64				Not Qualified		134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
PC28F256P30TFE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B64	2 V	1.2 mm	10 mm	Not Qualified	TOP	268435456 bit	1.7 V			e1	30	260	NOR TYPE	.00021 Amp	13 mm	YES	100 ns	1.8	NO
RC28F640P33TF60A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	28 mA	4194304 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	4,63	YES	TIN LEAD SILVER		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	8 mm	Not Qualified	TOP	67108864 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8	e0			NOR TYPE	.002 Amp	10 mm	YES	60 ns	3	NO
PC28F256P30BFE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64	2 V	1.2 mm	10 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	ASYNCHRONOUS READ MODE		e1	30	260	NOR TYPE	.00021 Amp	13 mm	YES	100 ns	1.8	NO
RC28F00AM29EWHA	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	31 mA	67108864 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	64MX16	64M	-40 Cel	1K	YES	TIN LEAD SILVER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified		1073741824 bit	2.7 V		16/32	e0			NOR TYPE	.00024 Amp	13 mm	YES	100 ns	3	YES
PC28F00AP30TFA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	67108864 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	64MX16	64M	-40 Cel	4,1023	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B64	2 V	1.2 mm	8 mm	Not Qualified	TOP	1073741824 bit	1.7 V	TOP BOOT	16	e1	30	260	NOR TYPE	.00024 Amp	10 mm	YES	100 ns	3	NO
PC28F512M29EWHA	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	31 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	32MX16	32M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified		536870912 bit	2.7 V		16/32	e1			NOR TYPE	.000225 Amp	13 mm	YES	100 ns	3	YES
PC48F4400P0VB0EE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	33554432 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	32MX16	32M	-40 Cel	8, 510	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64	2 V	1.2 mm	10 mm	Not Qualified	BOTTOM/TOP	536870912 bit	1.7 V	ASYNCHRONOUS READ MODE		e1	30	260	NOR TYPE	.00042 Amp	13 mm	YES	100 ns	1.8	NO
PC28F128P30BF65A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	50 mA	8388608 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	4,127	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64	2 V	1.2 mm	10 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8	e1	30	260	NOR TYPE	.000055 Amp	13 mm	YES	65 ns	1.8	NO
PC28F00BM29EWHA	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	31 mA	134217728 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	128MX16	128M	-40 Cel	2K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified		2147483648 bit	2.7 V		16/32	e1			NOR TYPE	.00048 Amp	13 mm	YES	100 ns	3	YES
PC28F00AG18FE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	128K	50 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	64MX16	64M	-40 Cel	512	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64	2 V	1.2 mm	8 mm	Not Qualified		1073741824 bit	1.7 V			e1			NOR TYPE	.000185 Amp	10 mm	YES	96 ns	2.7	NO
PC28F128G18FE	Micron Technology	FLASH	OTHER	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	128K	50 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-30 Cel	64	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64	2 V	1.2 mm	8 mm	Not Qualified		134217728 bit	1.7 V			e1			NOR TYPE	.000115 Amp	10 mm	YES	96 ns	2.7	NO
PC28F256G18FE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	128K	50 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	128	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64	2 V	1.2 mm	8 mm	Not Qualified		268435456 bit	1.7 V			e1			NOR TYPE	.00013 Amp	10 mm	YES	96 ns	2.7	NO
PC28F512G18FE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	128K	50 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	32MX16	32M	-40 Cel	256	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64	2 V	1.2 mm	8 mm	Not Qualified		536870912 bit	1.7 V	SUBGROUP FL1.8V		e1			NOR TYPE	.00016 Amp	10 mm	YES	96 ns	2.7	NO
PC28F128P30TF65A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	50 mA	8388608 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	4,127	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64	2 V	1.2 mm	10 mm	Not Qualified	TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8	e1			NOR TYPE	.000055 Amp	13 mm	YES	65 ns	1.8	NO
RC28F128J3F75G	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	GRID ARRAY, THIN PROFILE		8		1 mm	85 Cel	8MX16	8M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm			134217728 bit	2.7 V						NOR TYPE		13 mm		75 ns	3
RC28F640P33BF60A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	28 mA	4194304 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	4,63	YES			BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	8 mm	Not Qualified	BOTTOM	67108864 bit	2.3 V		8	e0	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.002 Amp	10 mm	YES	60 ns	3	NO
PC28F640P30TF65B	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	50 mA	4194304 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	4,63	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64	2 V	1.2 mm	10 mm	Not Qualified	TOP	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8	e1			NOR TYPE	.000055 Amp	13 mm	YES	65 ns	1.8	NO
PC28F512P30BFB	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	33554432 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,20		Flash Memories	1 mm	85 Cel	32MX16	32M	-40 Cel	4,511	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64	2 V	1.2 mm	8 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	BOTTOM BOOT	16	e1			NOR TYPE	.000225 Amp	10 mm	YES	100 ns	3	NO
PC28F512M29EWHG	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	85 Cel	32MX16	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm			536870912 bit	2.7 V			e1			NOR TYPE		13 mm		100 ns	3
RC28F256P30TFE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES	TIN LEAD SILVER		BOTTOM	R-PBGA-B64	2 V	1.2 mm	10 mm	Not Qualified	TOP	268435456 bit	1.7 V			e0			NOR TYPE	.00021 Amp	13 mm	YES	100 ns	1.8	NO
RC28F00AP30TFA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	67108864 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	64MX16	64M	-40 Cel	4,1023	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64	2 V	1.2 mm	8 mm	Not Qualified	TOP	1073741824 bit	1.7 V	TOP BOOT	16	e1	30	235	NOR TYPE	.00024 Amp	10 mm	YES	100 ns	3	NO
PC28F256P30BFF	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B64	2 V	1.2 mm	10 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	ASYNCHRONOUS READ MODE		e1	30	260	NOR TYPE	.00021 Amp	13 mm	YES	100 ns	1.8	NO
PC28F512P30EFA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	64K	31 mA	33554432 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	32MX16	32M	-40 Cel	512	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B64	2 V	1.2 mm	8 mm	Not Qualified		536870912 bit	1.7 V	SYMMETRICAL BLOCKS	16	e1	30	260	NOR TYPE	.000225 Amp	10 mm	YES	100 ns	3	NO
RC28F512M29EWLA	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	31 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	32MX16	32M	-40 Cel	512	YES	TIN LEAD SILVER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified		536870912 bit	2.7 V		16/32	e0			NOR TYPE	.000225 Amp	13 mm	YES	100 ns	3	YES
PC28F00AM29EWLE	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	31 mA	67108864 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	64MX16	64M	-40 Cel	1K	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified		1073741824 bit	2.7 V		16/32	e1	30	260	NOR TYPE	.00024 Amp	13 mm	YES	100 ns	2.7	YES
PC28F512M29EWLE	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	31 mA	33554432 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	32MX16	32M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified		536870912 bit	2.7 V		16/32	e1			NOR TYPE	.000225 Amp	13 mm	YES	100 ns	2.7	YES
RC28F00AM29EWLA	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	31 mA	67108864 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	64MX16	64M	-40 Cel	1K	YES	TIN LEAD SILVER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified		1073741824 bit	2.7 V		16/32	e0			NOR TYPE	.00024 Amp	13 mm	YES	100 ns	2.7	YES
RC28F00BM29EWHA	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	31 mA	134217728 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	128MX16	128M	-40 Cel	2K	YES	TIN LEAD SILVER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified		2147483648 bit	2.7 V		16/32	e0			NOR TYPE	.00048 Amp	13 mm	YES	100 ns	2.7	YES
PC28F064M29EWBX	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	13 mm	YES	65 ns	3	YES
PC28F064M29EWHA	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	25 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified		67108864 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	13 mm	YES	65 ns	3	YES
PC28F064M29EWHX	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	25 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified		67108864 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	13 mm	YES	65 ns	3	YES
PC28F064M29EWLA	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	25 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified		67108864 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	13 mm	YES	65 ns	3	YES
PC28F064M29EWLX	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	25 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified		67108864 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	13 mm	YES	65 ns	3	YES
PC28F064M29EWTA	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified	TOP	67108864 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	13 mm	YES	65 ns	3	YES
PC28F128M29EWHF	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	25 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified		134217728 bit	2.7 V		8/16	e1	30	260	NOR TYPE	.00012 Amp	13 mm	YES	60 ns	3	YES
PC28F128M29EWHX	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	25 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified		134217728 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	13 mm	YES	65 ns	3	YES
PC28F128M29EWLA	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	25 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified		134217728 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	13 mm	YES	65 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.