64 Flash Memory 169

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Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29GL064N11FFIS40	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm		10 mm		67108864 bit	1.65 V		NOR TYPE		13 mm		110 ns	3	NO
S29GL064N11FFIS42	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm		10 mm		67108864 bit	1.65 V		NOR TYPE		13 mm		110 ns	3	NO
S29GL064N90FFIS12	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm		11 mm		67108864 bit	2.7 V		NOR TYPE		13 mm		90 ns	3	NO
S29GL064N90FFIS20	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm		11 mm		67108864 bit	2.7 V		NOR TYPE		13 mm		90 ns	3	NO
S29GL064N90FFIS40	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm		10 mm		67108864 bit	2.7 V		NOR TYPE		13 mm		90 ns	3	NO
S29GL032N11FFIS33	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm		10 mm		33554432 bit	1.65 V		NOR TYPE		13 mm		110 ns	3	NO
S29GL032N90FFIS10	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO	YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm		11 mm		33554432 bit	2.7 V		NOR TYPE		13 mm		90 ns	3	NO
S29GL032N90FFIS42	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm		10 mm		33554432 bit	2.7 V		NOR TYPE		13 mm		90 ns	3	NO
S29GL032N90FFIS43	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm		10 mm		33554432 bit	2.7 V		NOR TYPE		13 mm		90 ns	3	NO
S29GL064N11FFIS10	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm		11 mm		67108864 bit	1.65 V		NOR TYPE		13 mm		110 ns	3	NO
S29GL064N11FFIS13	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm		11 mm		67108864 bit	1.65 V		NOR TYPE		13 mm		110 ns	3	NO
S29GL064N11FFIS20	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm		11 mm		67108864 bit	1.65 V		NOR TYPE		13 mm		110 ns	3	NO
S29GL064N11FFIS22	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm		11 mm		67108864 bit	1.65 V		NOR TYPE		13 mm		110 ns	3	NO
S29GL064N11FFIS32	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm		10 mm		67108864 bit	1.65 V		NOR TYPE		13 mm		110 ns	3	NO
S29GL064N11FFIS33	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm		10 mm		67108864 bit	1.65 V		NOR TYPE		13 mm		110 ns	3	NO
S29GL064N90FFIS10	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm		11 mm		67108864 bit	2.7 V		NOR TYPE		13 mm		90 ns	3	NO
S29GL064N90FFIS30	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm		10 mm		67108864 bit	2.7 V		NOR TYPE		13 mm		90 ns	3	NO
S29GL032N11FFIS13	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm		11 mm		33554432 bit	1.65 V		NOR TYPE		13 mm		110 ns	3	NO
S29GL032N11FFIS23	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm		11 mm		33554432 bit	1.65 V		NOR TYPE		13 mm		110 ns	3	NO
S29GL032N11FFIS43	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm		10 mm		33554432 bit	1.65 V		NOR TYPE		13 mm		110 ns	3	NO
S29GL032N90FFIS40	Infineon Technologies	FLASH	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm		10 mm		33554432 bit	2.7 V		NOR TYPE		13 mm		90 ns	3	NO
S29GL032N90FFIS20	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm		11 mm		33554432 bit	2.7 V		NOR TYPE		13 mm		90 ns	3	NO
S29GL032N90FFIS23	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		2MX16	2M	-40 Cel		NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm		11 mm		33554432 bit	2.7 V		NOR TYPE		13 mm		90 ns	3	NO
S29GL064N11FFIS23	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K		4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		1 mm	85 Cel		4MX16	4M	-40 Cel		NO	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm		11 mm		67108864 bit	1.65 V		NOR TYPE		13 mm		110 ns	3	NO
S29GL064S90FHI020	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	60 mA	4194304 words	3	YES	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	20	1 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	128	YES	YES	BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm	60 ms	67108864 bit	2.7 V	8/16	NOR TYPE	.0002 Amp	13 mm	YES	90 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.